WO2019029171A1 - Sacrificial layer structure, method for peeling off material layer and method for fabricating mirror surface of light emitting diode - Google Patents
Sacrificial layer structure, method for peeling off material layer and method for fabricating mirror surface of light emitting diode Download PDFInfo
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- WO2019029171A1 WO2019029171A1 PCT/CN2018/081675 CN2018081675W WO2019029171A1 WO 2019029171 A1 WO2019029171 A1 WO 2019029171A1 CN 2018081675 W CN2018081675 W CN 2018081675W WO 2019029171 A1 WO2019029171 A1 WO 2019029171A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Definitions
- Sacrificial layer structure a Sacrificial layer structure, method of peeling material layer, and mirror manufacturing method of light emitting diode
- the present invention belongs to the technical field of material layer patterning, and in particular relates to a method for forming a patterned structure by partially peeling a material layer.
- Patterning techniques are often applied in the fabrication of semiconductor and microelectromechanical systems, such as forming patterned metal electrodes, thin film layers, and the like.
- the main graphic technologies are: wet etching, dry etching, and peeling.
- Chinese Patent Publication No. CN101136327A discloses a method for preparing a patterned platinum/titanium metal film by preparing a sacrificial layer on a substrate; patterning the sacrificial layer by photolithography and etching, and retaining the Pt/Ti metal film in the future Where the sacrificial layer is etched away, where the Pt/Ti metal film is stripped, the sacrificial layer is retained; the Pt/Ti metal film is formed on the patterned sacrificial layer; the sacrificial layer is released, and the Pt/Ti is stripped Metal film graphics.
- a mirror surface is often formed between the epitaxial layer of the chip and the substrate by a bonding process, thereby preventing the light emission in the chip from being absorbed by the substrate, and reflecting it to the light-emitting surface to enhance the overall brightness.
- the reflectivity of the mirror structure of a typical low index material e.g., MgF 2 so that the greater difference in refractive index, increasing the probability of total internal reflection to increase the reflectivity.
- the chemical properties of low-reflectivity materials are significantly different from those of the currently used dielectric material SiO 2 .
- MgF 2 In the case of MgF 2 , it has a property of being difficult to be etched using a chemical solution, so the pattern of the specular reflection layer is often defined by peeling, as shown in FIG.
- the stripping process due to the high-temperature process of the vapor deposition machine, the conventional photoresist cannot be used as the sacrificial layer, and SiO 2 is mainly used.
- the MgF 2 layer 141 which is completed by the peeling method is easy to peel off the MgF 2 which is incompletely peeled off at the edge.
- the layer 142 is partially suspended, which in turn causes cracks 162 in the subsequently vapor-deposited metal mirror 160, as shown in Fig. 2, affecting the brightness of the core particles and verifying the reliability.
- the present invention discloses a sacrificial layer structure and a method of forming a patterned structure using the sacrificial layer structure release material layer, which is suitable for any process requiring peeling, such as an oxide, a film or a metal.
- a sacrificial layer structure for a release material layer comprising: a substrate having an upper surface divided into a first region and a second region; a sacrificial layer formed on the base a first region of the upper surface of the material; the sacrificial layer has an upper width and a lower width, and a thickness greater than a thickness of the material layer to be peeled off.
- the sacrificial layer sequentially includes a first sacrificial layer and a second sacrificial layer, the structure of which exhibits a second sacrificial layer length greater than the first sacrificial layer.
- the first sacrificial layer and the second sacrificial layer are preferably different metal materials, wherein the first sacrificial layer has a much higher etching rate than the second sacrificial layer, so that the double sacrificial layer exhibits a second sacrifice after etching with different chemical solutions.
- the layer length is greater than the mushroom-shaped sacrificial layer of the first sacrificial layer.
- the thickness of the first sacrificial layer is greater than the thickness of the material layer to be stripped.
- a method of peeling a material layer comprising the steps of: (1) providing a substrate, the upper surface of which is divided into a first region and a second region; ( 2 ) at the base a first region of the upper surface of the material forms a sacrificial layer, and the sacrificial layer has an upper width and a lower narrow shape; (3) depositing a material layer to be stripped on the upper surface of the substrate, since the sacrificial layer is upper and lower Forming a portion of the material layer covering the sacrificial layer and a portion of the second region covering the upper surface of the substrate; (4) removing the sacrificial layer so as to be located on the surface of the sacrificial layer The material layer on the peeling off.
- the sacrificial layer formed in the step (2) comprises, in order, a first sacrificial layer and a second sacrificial layer, the structure of which presents that the length of the second sacrificial layer is greater than that of the first sacrificial layer.
- the step (3) includes: (a) vaporizing the first sacrificial layer, and then evaporating the second sacrificial layer, wherein the first sacrificial layer has an etching rate greater than the second sacrificial layer; b) defining a sacrificial layer pattern, defining a pattern by a yellow light process, etching the second sacrificial layer using a first etching solution, etching the first sacrificial layer using a second etching solution, etching with a different etching solution, and controlling the etching rate
- the double sacrificial layer forms a mushroom-like morphology that is long and short.
- the first sacrificial layer has a thickness of 100 to 2000 nm; and the second sacrificial layer has a thickness of 10 to 200 nm.
- the thickness of the first sacrificial layer is higher than the thickness of the material layer.
- the present invention also provides a mirror manufacturing method of a light emitting diode, comprising the steps of: (1) providing an LE D epitaxial structure having a first surface and a second surface of the opposite phase, wherein the first surface is a light emitting surface, The second surface is divided into an ohmic contact region and a light reflecting region; (2) forming a sacrificial layer in the ohmic contact region of the second surface of the LED epitaxial structure, the sacrificial layer being upper and lower narrow; (3) Depositing a light transmissive layer on the second surface of the epitaxial structure, wherein the sacrificial layer has an upper width and a lower narrow shape such that the light transmissive layer covers the portion of the sacrificial layer and the light covering the second surface of the epitaxial structure Partially breaking the reflective region; (4) removing the sacrificial layer to peel the light transmissive layer on the surface of the sacrificial layer to form a patterned light transmissive layer; (5)
- the present invention has at least the following beneficial effects: (1)
- the self-peeling can be formed by using the sacrificial layer structure of a special structure, so that the stripping process is relatively simple, and the same peeling appearance can be obtained, and the retained pattern edges are not easily left. Or pick up.
- (2) Can be applied to more special conditions, such as high temperature, strong acid and alkali protection.
- FIG. 1 is a schematic view showing a conventional patterned material layer on the surface of an epitaxial layer of an LED using a lift-off method.
- FIG. 2 is a schematic view showing the structure of forming a metal mirror on the patterned material layer formed in FIG. 1.
- FIG. 3 is a flow chart of forming a patterned structure of a partially exfoliated material layer in accordance with an embodiment of the present invention.
- FIGS. 4 to 9 are schematic diagrams showing a process of forming a mirror structure on the surface of a light emitting diode according to an embodiment of the present invention.
- the numbers in the figures are as follows:
- 110a a region of the surface of the LED epitaxial structure forming the patterned MgF 2 layer 140;
- 110b a region of the surface of the LED epitaxial structure forming the sacrificial layer 130;
- [0030] 160 a metal mirror layer
- 210a a light reflecting area of the surface of the LED epitaxial structure
- 210b an ohmic contact region of the surface of the LED epitaxial structure
- FIG. 3 discloses a method of forming a patterned structure from a layer of partially exfoliated material in accordance with an embodiment of the present invention, Specifically, the steps S110 to S140 are included. The following is a description of the patterned reflective layer of the light emitting diode, which is described in detail with reference to FIGS. 4-9.
- Step S110 providing a substrate 210 on which the patterned layer 240 is to be formed.
- the substrate 210 includes an LED epitaxial structure, generally including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer sandwiched therebetween.
- the surface of the LED epitaxial structure 210 is divided into two regions: The light reflecting region 210a and the ohmic contact region 210b, wherein the light reflecting region 210a is for forming a low refractive index material layer, and the ohmic contact region 210b is for forming an ohmic contact layer.
- the ohmic contact region 210b may be formed with a GaAs ohmic contact layer 22 0 and a metal ohmic contact layer 250, and the light reflecting region 210a is used to form a low refractive index material layer, as shown in FIG.
- Step S120 forming a sacrificial layer 230 on the upper surface of the substrate 210 in the ohmic contact region 210b, which is wide and narrow. This is one of the key steps of the embodiment, which requires the formation of a sacrificial layer of a special topography that is narrow in width and width, and which is required to have a thickness greater than the thickness of the layer of material to be stripped, as follows:
- a first sacrificial layer 231 and a second sacrificial layer 232 are sequentially formed on the upper surface of the substrate 210, as shown in FIG. 5, wherein the total thickness of the first sacrificial layer 231 and the second sacrificial layer 232 is larger than that to be formed.
- the thickness of the low refractive index material layer is 100 to 2000 nm of the thickness of the first sacrificial layer 231, and the thickness of the second sacrificial layer 232 is 10 to 20 nm.
- the first sacrificial layer 231 and the second sacrificial layer 232 are made of different metal materials.
- the selective etching may be performed by using different etching solutions, wherein the etching rate of the first sacrificial layer 231 is much larger than the etching rate of the second sacrificial layer.
- the metal sacrificial layer can be applied to processes such as high temperature, strong acid or strong alkali.
- the first sacrificial layer 231 is made of silver, and has a thickness of 100 to 1000 nm, for example, 500 nm
- the second sacrificial layer 232 is made of titanium, and the thickness may be 10 to 100 nm, for example, 50 nm.
- the pattern of the sacrificial layer is defined using a yellow light process. First etching the second sacrificial layer 23 2 using the first etching solution, and then etching the first sacrificial layer 231 using the second etching solution, wherein the second etching liquid does not substantially etch the second sacrificial layer, and etching different sacrificial layers by using different etching solutions And controlling the etch rate and the etched turns cause the double sacrificial layer to form a mushroom-like morphology that is long and short.
- the second sacrificial layer is first etched using an HF: H 2 0 etching solution, and the etching time is 5 to 20 seconds, and then the first sacrificial layer is etched using an NH 4 OH: H 2 0 2 etching solution to etch the day. For 20 to 50 seconds, different metals are etched using different etching solutions to form a topography as shown in FIG.
- Step S130 depositing the light transmissive layer 240. Since the sacrificial layer 230 is upper and lower narrow, the light transmissive layer 240 covers the portion 241 of the sacrificial layer 230 and the portion 24 of the light reflecting region 210a covering the upper surface of the epitaxial structure of the LED. 2 broken, as shown in Figure 7. Due to the mushroom-shaped sacrificial layer design, after the light-transmissive layer 240 is evaporated, the portion 241 (the portion to be removed) on the sacrificial layer 230 is automatically and the portion 242 located in the light-reflecting region (to be retained)
- Step S140 removing the sacrificial layer 230, that is, completing the stripping process, in the light reflection region of the LED epitaxial structure 210
- 210a forms a patterned light transmissive layer 242.
- a metal mirror layer 260 is formed on the light transmissive layer 242 and the metal ohmic contact layer 250, thereby completing LE
- the sacrificial layer 230 has a mushroom-shaped design, the edge residual of the pattern can be effectively avoided, and the difference between the length of the upper and lower sides and the height is matched with the evaporation characteristics of the film evaporation machine to achieve automatic The effect of peeling.
Abstract
Provided is a method for peeling off a material layer, comprising the steps of: (1) providing a substrate (210), and dividing the upper surface thereof into a first region and a second region; (2) forming a sacrificial layer (230) in the first region of the upper surface of the substrate, the sacrificial layer having a wide upper part and a narrow lower part; (3) depositing a material layer to be peeled off on the upper surface of the substrate, wherein the part of the material layer covering the sacrificial layer is separated from the part of the material layer covering the second region of the upper surface of the substrate due to the sacrificial layer having a wide upper part and a narrow lower part; and (4) removing the sacrificial layer by etching so as to peel off the material layer located on the surface of the sacrificial layer. Also provided are a sacrificial layer structure used in the present peel-off method and a method for fabricating a light emitting diode which uses the peel-off method.
Description
牺牲层结构、 剥离材料层的方法及发光二极管的镜面制作方法 Sacrificial layer structure, method of peeling material layer, and mirror manufacturing method of light emitting diode
技术领域 Technical field
[0001] 本发明属于材料层图形化技术领域， 具体涉及一种局部剥离材料层形成图形化 结构的方法。 [0001] The present invention belongs to the technical field of material layer patterning, and in particular relates to a method for forming a patterned structure by partially peeling a material layer.
背景技术 Background technique
[0002] 在半导体和微电子机械系统的制造工艺中经常应用到图形化技术， 例如形成图 形化的金属电极、 薄膜层等。 目前图形化技术主要有： 湿法腐蚀、 干法腐蚀、 剥离三种。 [0002] Patterning techniques are often applied in the fabrication of semiconductor and microelectromechanical systems, such as forming patterned metal electrodes, thin film layers, and the like. At present, the main graphic technologies are: wet etching, dry etching, and peeling.
[0003] 中国专利文献 CN101136327A公幵了一种图形化铂 /钛金属薄膜的剥离制备方法 ， 在基片上制备牺牲层； 通过光刻和刻蚀技术图形化牺牲层， 将来 Pt/Ti金属薄 膜保留的地方， 牺牲层被刻蚀掉， 将来 Pt/Ti金属薄膜被剥离的地方， 牺牲层被 保留； 在图形化后的牺牲层上制备 Pt/Ti金属薄膜； 释放牺牲层， 剥离出 Pt/Ti金 属薄膜图形。 [0003] Chinese Patent Publication No. CN101136327A discloses a method for preparing a patterned platinum/titanium metal film by preparing a sacrificial layer on a substrate; patterning the sacrificial layer by photolithography and etching, and retaining the Pt/Ti metal film in the future Where the sacrificial layer is etched away, where the Pt/Ti metal film is stripped, the sacrificial layer is retained; the Pt/Ti metal film is formed on the patterned sacrificial layer; the sacrificial layer is released, and the Pt/Ti is stripped Metal film graphics.
[0004] 现有发光二极管之增光工艺， 经常通过键合工艺在芯片外延层与基板之间制作 反射镜面， 藉此避免芯片内发光被基板吸收， 并将其反射至出光面提升整体亮 度。 镜面结构的反射率一般采用低折射率材料 (例如 MgF 2)以使折射率差异更大 ， 增加全反射机率以增加反射率。 然而低射率材料的化学特性与目前普遍使用 的介电质材料 SiO 2有着明显的不同。 以 MgF 2来说， 它具不易使用化学溶液蚀刻 的特性， 因此多采用剥离的方式定义镜面反射层的图形， 如图 1所示。 在剥离工 艺中， 由于需配合蒸镀机台的高温制程， 一般不能采用传统的光阻作为牺牲层 ， 多采用 SiO 2为主。 然而， 采用剥离方式完成的 MgF 2层141容易在边缘残留剥 离不完全的 MgF 2 [0004] In the light-increasing process of the existing light-emitting diode, a mirror surface is often formed between the epitaxial layer of the chip and the substrate by a bonding process, thereby preventing the light emission in the chip from being absorbed by the substrate, and reflecting it to the light-emitting surface to enhance the overall brightness. The reflectivity of the mirror structure of a typical low index material (e.g., MgF 2) so that the greater difference in refractive index, increasing the probability of total internal reflection to increase the reflectivity. However, the chemical properties of low-reflectivity materials are significantly different from those of the currently used dielectric material SiO 2 . In the case of MgF 2 , it has a property of being difficult to be etched using a chemical solution, so the pattern of the specular reflection layer is often defined by peeling, as shown in FIG. In the stripping process, due to the high-temperature process of the vapor deposition machine, the conventional photoresist cannot be used as the sacrificial layer, and SiO 2 is mainly used. However, the MgF 2 layer 141 which is completed by the peeling method is easy to peel off the MgF 2 which is incompletely peeled off at the edge.
层 142， 部分会呈现悬空的状态， 进而使后续蒸镀的金属镜面 160产生裂缝 162， 如图 2所示， 影响芯粒的亮度以及可靠性验证。 The layer 142 is partially suspended, which in turn causes cracks 162 in the subsequently vapor-deposited metal mirror 160, as shown in Fig. 2, affecting the brightness of the core particles and verifying the reliability.
技术问题
问题的解决方案 technical problem Problem solution
技术解决方案 Technical solution
[0005] 本发明公幵了一种牺牲层结构及采用该牺牲层结构剥离材料层形成图形化结构 的方法， 该方法适用于任何需要采用剥离的制程， 例如氧化物、 薄膜或者金属 等。 The present invention discloses a sacrificial layer structure and a method of forming a patterned structure using the sacrificial layer structure release material layer, which is suitable for any process requiring peeling, such as an oxide, a film or a metal.
[0006] 根据本发明的第一个方面， 一种用于剥离材料层的牺牲层结构， 包括： 基材， 其上表面划分为第一区域和第二区域； 牺牲层， 形成于所述基材上表面的第一 区域； 所述牺牲层呈上宽下窄状， 其厚度大于待剥离的材料层的厚度。 [0006] According to a first aspect of the invention, a sacrificial layer structure for a release material layer, comprising: a substrate having an upper surface divided into a first region and a second region; a sacrificial layer formed on the base a first region of the upper surface of the material; the sacrificial layer has an upper width and a lower width, and a thickness greater than a thickness of the material layer to be peeled off.
[0007] 优选地， 所述牺牲层依次包括第一牺牲层和第二牺牲层， 其结构呈现第二牺牲 层长度大于第一牺牲层。 所述第一牺牲层和第二牺牲层优选为不同金属材料， 其中第一牺牲层蚀刻速率远大于第二牺牲层， 使该双层牺牲层在以不同化学溶 液蚀刻后， 结构呈现第二牺牲层长度大于第一牺牲层的蘑菇状牺牲层。 [0007] Preferably, the sacrificial layer sequentially includes a first sacrificial layer and a second sacrificial layer, the structure of which exhibits a second sacrificial layer length greater than the first sacrificial layer. The first sacrificial layer and the second sacrificial layer are preferably different metal materials, wherein the first sacrificial layer has a much higher etching rate than the second sacrificial layer, so that the double sacrificial layer exhibits a second sacrifice after etching with different chemical solutions. The layer length is greater than the mushroom-shaped sacrificial layer of the first sacrificial layer.
[0008] 优选地， 所述第一牺牲层的厚度大于所述待剥离的材料层的厚度。 [0008] Preferably, the thickness of the first sacrificial layer is greater than the thickness of the material layer to be stripped.
[0009] 根据本发明的第二个方面， 一种剥离材料层的方法， 包括步骤： （1) 提供基 材， 其上表面划分为第一区域和第二区域； （2) 在所述基材上表面的第一区域 形成牺牲层， 所述牺牲层呈上宽下窄状； （3) 在所述基材的上表面沉积待剥离 的材料层， 由于所述牺牲层呈上宽下窄状， 使得所述材料层覆盖在所述牺牲层 的部分与覆盖在所述基材上表面的第二区域的部分断幵； （4) 去除所述牺牲层 ， 从而将位于所述牺牲层表面上的材料层剥离。 [0009] According to a second aspect of the invention, a method of peeling a material layer, comprising the steps of: (1) providing a substrate, the upper surface of which is divided into a first region and a second region; ( 2 ) at the base a first region of the upper surface of the material forms a sacrificial layer, and the sacrificial layer has an upper width and a lower narrow shape; (3) depositing a material layer to be stripped on the upper surface of the substrate, since the sacrificial layer is upper and lower Forming a portion of the material layer covering the sacrificial layer and a portion of the second region covering the upper surface of the substrate; (4) removing the sacrificial layer so as to be located on the surface of the sacrificial layer The material layer on the peeling off.
[0010] 优选的， 所述步骤 （2) 中形成的牺牲层依次包括第一牺牲层和第二牺牲层， 其结构呈现第二牺牲层的长度大于第一牺牲层。 [0010] Preferably, the sacrificial layer formed in the step (2) comprises, in order, a first sacrificial layer and a second sacrificial layer, the structure of which presents that the length of the second sacrificial layer is greater than that of the first sacrificial layer.
[0011] 在一些实施例中， 所述步骤 （3) 包括： （a)蒸镀第一牺牲层， 接着蒸镀第二牺 牲层， 其中第一牺牲层的蚀刻速率大于第二牺牲层； （b)定义牺牲层图形， 利用 黄光制程定义出图形， 使用第一蚀刻液蚀刻第二牺牲层， 接着使用第二蚀刻液 蚀刻第一牺牲层， 利用不同蚀刻溶液蚀刻， 且控制蚀刻速率使其双牺牲层形成 上长下短的蘑菇状的形貌。 [0011] In some embodiments, the step (3) includes: (a) vaporizing the first sacrificial layer, and then evaporating the second sacrificial layer, wherein the first sacrificial layer has an etching rate greater than the second sacrificial layer; b) defining a sacrificial layer pattern, defining a pattern by a yellow light process, etching the second sacrificial layer using a first etching solution, etching the first sacrificial layer using a second etching solution, etching with a different etching solution, and controlling the etching rate The double sacrificial layer forms a mushroom-like morphology that is long and short.
[0012] 优选地， 所述第一牺牲层的厚度为 100~2000nm; 所述第二牺牲层的厚度为 10~ 200nm。
[0013] 优选地， 所述第一牺牲层的厚度高于所述材料层的厚度。 [0012] Preferably, the first sacrificial layer has a thickness of 100 to 2000 nm; and the second sacrificial layer has a thickness of 10 to 200 nm. [0013] Preferably, the thickness of the first sacrificial layer is higher than the thickness of the material layer.
[0014] 本发明还提供了一种发光二极管的镜面制作方法， 包括步骤： （1) 提供一 LE D外延结构， 具有对相的第一表面和第二表面， 其中第一表面为出光面， 第二表 面划分为欧姆接触区和光反射区； （2) 在所述 LED外延结构第二表面的欧姆接 触区形成一牺牲层， 所述牺牲层呈上宽下窄状； （3) 在所述外延结构的第二表 面上沉积透光层， 由于所述牺牲层呈上宽下窄状， 使得所述透光层覆盖在所述 牺牲层的部分与覆盖在所述外延结构第二表面的光反射区的部分断幵； （4) 去 除所述牺牲层， 从而将位于所述牺牲层表面上的透光层剥离， 形成图案化的透 光层； （5) 在所述透光层上形成金属反射层。 [0014] The present invention also provides a mirror manufacturing method of a light emitting diode, comprising the steps of: (1) providing an LE D epitaxial structure having a first surface and a second surface of the opposite phase, wherein the first surface is a light emitting surface, The second surface is divided into an ohmic contact region and a light reflecting region; (2) forming a sacrificial layer in the ohmic contact region of the second surface of the LED epitaxial structure, the sacrificial layer being upper and lower narrow; (3) Depositing a light transmissive layer on the second surface of the epitaxial structure, wherein the sacrificial layer has an upper width and a lower narrow shape such that the light transmissive layer covers the portion of the sacrificial layer and the light covering the second surface of the epitaxial structure Partially breaking the reflective region; (4) removing the sacrificial layer to peel the light transmissive layer on the surface of the sacrificial layer to form a patterned light transmissive layer; (5) forming on the transparent layer Metal reflective layer.
发明的有益效果 Advantageous effects of the invention
有益效果 Beneficial effect
[0015] 本发明具有至少以下有益效果： （1) 利用特殊结构的牺牲层结构， 可以形成 自动剥离， 使得剥离流程较为简便， 同吋可以获得较佳的剥离形貌， 保留的图 案边缘不易残留或掀起。 （2) 能应用于更多特殊状况， 如高温、 强酸强碱保护 等。 [0015] The present invention has at least the following beneficial effects: (1) The self-peeling can be formed by using the sacrificial layer structure of a special structure, so that the stripping process is relatively simple, and the same peeling appearance can be obtained, and the retained pattern edges are not easily left. Or pick up. (2) Can be applied to more special conditions, such as high temperature, strong acid and alkali protection.
[0016] 本发明的其它特征和优点将在随后的说明书中阐述， 并且， 部分地从说明书中 变得显而易见， 或者通过实施本发明而了解。 本发明的目的和其他优点可通过 在说明书、 权利要求书以及附图中所特别指出的结构来实现和获得。 Other features and advantages of the invention will be set forth in the description which follows, The objectives and other advantages of the invention will be realized and attained by the <RTI
对附图的简要说明 Brief description of the drawing
附图说明 DRAWINGS
[0017] 附图用来提供对本发明的进一步理解， 并且构成说明书的一部分， 与本发明的 实施例一起用于解释本发明， 并不构成对本发明的限制。 此外， 附图数据是描 述概要， 不是按比例绘制。 The drawings are intended to provide a further understanding of the invention, and are intended to be a part of the description of the invention. In addition, the drawing figures are a summary of the description and are not drawn to scale.
[0018] 图 1为现有的采用剥离方式在发光二极管外延层表面上形成图形化的材料层的 示意图。 1 is a schematic view showing a conventional patterned material layer on the surface of an epitaxial layer of an LED using a lift-off method.
[0019] 图 2为在图 1所形成的图形化材料层上形成金属镜面的结构示意图。 2 is a schematic view showing the structure of forming a metal mirror on the patterned material layer formed in FIG. 1.
[0020] 图 3为根据本发明实施的一种局部剥离材料层形成图形化结构的流程图。 3 is a flow chart of forming a patterned structure of a partially exfoliated material layer in accordance with an embodiment of the present invention.
[0021] 图 4~9为根据本发明实施的一种发光二极管的表面上形成镜面结构的过程示意
[0022] 图中各标号表示如下： 4 to 9 are schematic diagrams showing a process of forming a mirror structure on the surface of a light emitting diode according to an embodiment of the present invention. [0022] The numbers in the figures are as follows:
[0023] 110： LED外延结构的表面； [0023] 110: a surface of the LED epitaxial structure;
[0024] 110a: LED外延结构表面之形成图形化 MgF 2层140的区域; [0024] 110a: a region of the surface of the LED epitaxial structure forming the patterned MgF 2 layer 140;
[0025] 110b ： LED外延结构表面之形成牺牲层 130的区域； [0025] 110b: a region of the surface of the LED epitaxial structure forming the sacrificial layer 130;
[0026] 130： SiO 2牺牲层； 130: a SiO 2 sacrificial layer;
[0027] 140： MgF 2层； [0027] 140: a MgF 2 layer;
[0028] 141： 剥离后的图形化 MgF 2层 [0028] 141: Patterned MgF 2 layer after peeling
[0029] 142： 边缘残留的 MgF 2层； [0029] 142: an edge residual MgF 2 layer;
[0030] 160： 金属镜面层； [0030] 160: a metal mirror layer;
[0031] 162： 裂缝； [0031] 162: a crack;
[0032] 210： LED外延结构； [0032] 210: LED epitaxial structure;
[0033] 210a: LED外延结构表面的光反射区； [0033] 210a: a light reflecting area of the surface of the LED epitaxial structure;
[0034] 210b: LED外延结构表面的欧姆接触区； [0034] 210b: an ohmic contact region of the surface of the LED epitaxial structure;
[0035] 220： 半导体欧姆接触层； [0035] 220: a semiconductor ohmic contact layer;
[0036] 230： 牺牲层； [0036] 230: a sacrificial layer;
[0037] 231： 第一牺牲层； [0037] 231: a first sacrificial layer;
[0038] 232： 第二牺牲层； [0038] 232: a second sacrificial layer;
[0039] 240： 透光层； [0039] 240: a light transmissive layer;
[0040] 241： 透光层之位于牺牲层上部分； [0040] 241: a portion of the light transmissive layer on the sacrificial layer;
[0041] 242： 图形化后的透光层； [0041] 242: a patterned light transmissive layer;
[0042] 250： 金属欧姆接触层； [0042] 250: a metal ohmic contact layer;
[0043] 260： 金属镜面层。 [0043] 260: Metal mirror layer.
本发明的实施方式 Embodiments of the invention
[0044] 下面结合附图和实施例对本发明所公幵的牺牲层结构及采用该牺牲层结构剥离 材料层形成图形化结构的方法进行详细说明。 The sacrificial layer structure disclosed in the present invention and the method of forming the patterned structure using the sacrificial layer structure release material layer will be described in detail below with reference to the accompanying drawings and embodiments.
[0045] 图 3公幵了根据本发明实施的一种局部剥离材料层形成图形化结构的方法， 其
具体包括步骤 S110~S140， 下面以制作发光二极管之图形化反射层为例， 结合附 图 4~9进行详细描述。 [0045] FIG. 3 discloses a method of forming a patterned structure from a layer of partially exfoliated material in accordance with an embodiment of the present invention, Specifically, the steps S110 to S140 are included. The following is a description of the patterned reflective layer of the light emitting diode, which is described in detail with reference to FIGS. 4-9.
[0046] 步骤 S110: 提供一待形成图案化层 240的基材 210。 以 LED芯片为例， 基材 210 包括 LED外延结构， 一般包括 n型半导体层、 p型半导体层和夹在两者之间的有源 层， 该 LED外延结构 210的表面划分为两个区域： 光反射区 210a和欧姆接触区 210 b， 其中光反射区 210a用于形成低折射率材料层， 欧姆接触区 210b用于形成欧姆 接触层。 以 AlGalnP系 LED为例， 欧姆接触区 210b可预先形成 GaAs欧姆接触层 22 0和金属欧姆接触层 250， 光反射区 210a用于形成低折射率材料层， 如图 4所示。 [0046] Step S110: providing a substrate 210 on which the patterned layer 240 is to be formed. Taking the LED chip as an example, the substrate 210 includes an LED epitaxial structure, generally including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer sandwiched therebetween. The surface of the LED epitaxial structure 210 is divided into two regions: The light reflecting region 210a and the ohmic contact region 210b, wherein the light reflecting region 210a is for forming a low refractive index material layer, and the ohmic contact region 210b is for forming an ohmic contact layer. Taking the AlGalnP-based LED as an example, the ohmic contact region 210b may be formed with a GaAs ohmic contact layer 22 0 and a metal ohmic contact layer 250, and the light reflecting region 210a is used to form a low refractive index material layer, as shown in FIG.
[0047] 步骤 S120: 在基材 210上表面的欧姆接触区 210b形成牺牲层 230， 其呈上宽下窄 状。 此为本实施例的重点步骤之一， 其要求形成的上宽下窄的特殊形貌的牺牲 层， 且其厚度上要求大于待剥离材料层的厚度， 具体如下： [0047] Step S120: forming a sacrificial layer 230 on the upper surface of the substrate 210 in the ohmic contact region 210b, which is wide and narrow. This is one of the key steps of the embodiment, which requires the formation of a sacrificial layer of a special topography that is narrow in width and width, and which is required to have a thickness greater than the thickness of the layer of material to be stripped, as follows:
[0048] 首先， 依次在基材 210的上表面形成第一牺牲层 231和第二牺牲层 232， 如图 5所 示， 其中第一牺牲层 231和第二牺牲层 232的总厚度大于待形成的低折射率材料 层的厚度， 第一牺牲层 231的厚度的 100~2000nm， 第二牺牲层 232的厚度为 10~20 Onm, 优选第一牺牲层 231和第二牺牲层 232采用不同金属材料构成， 可采用不同 的蚀刻液分别进行选择性蚀刻， 其中第一牺牲层 231的蚀刻速率远大于第二牺牲 层的蚀刻速率。 采用金属牺牲层比较能够适用于高温、 强酸或强碱等制程。 在 本实施例， 第一牺牲层 231选用银， 厚度取值可为 100~1000nm， 例如 500nm， 第 二牺牲层 232选用钛， 厚度取值可为 10~100nm， 例如 50nm。 [0048] First, a first sacrificial layer 231 and a second sacrificial layer 232 are sequentially formed on the upper surface of the substrate 210, as shown in FIG. 5, wherein the total thickness of the first sacrificial layer 231 and the second sacrificial layer 232 is larger than that to be formed. The thickness of the low refractive index material layer is 100 to 2000 nm of the thickness of the first sacrificial layer 231, and the thickness of the second sacrificial layer 232 is 10 to 20 nm. Preferably, the first sacrificial layer 231 and the second sacrificial layer 232 are made of different metal materials. The selective etching may be performed by using different etching solutions, wherein the etching rate of the first sacrificial layer 231 is much larger than the etching rate of the second sacrificial layer. The metal sacrificial layer can be applied to processes such as high temperature, strong acid or strong alkali. In this embodiment, the first sacrificial layer 231 is made of silver, and has a thickness of 100 to 1000 nm, for example, 500 nm, and the second sacrificial layer 232 is made of titanium, and the thickness may be 10 to 100 nm, for example, 50 nm.
[0049] 接着， 利用黄光工艺定义牺牲层的图案。 先使用第一蚀刻液蚀刻第二牺牲层 23 2， 接着使用第二蚀刻液蚀刻第一牺牲层 231， 其中第二蚀刻液基本上不对第二 牺牲层进行蚀刻， 利用不同蚀刻溶液蚀刻不同牺牲层， 且控制蚀刻速率和蚀刻 的吋间使其双牺牲层形成上长下短的蘑菇状的形貌。 在本实施例， 先使用 HF: H 20蚀刻液蚀刻第二牺牲层， 蚀刻吋间为 5~20秒， 接着使用 NH 4OH: H 20 2蚀 刻液蚀刻第一牺牲层， 蚀刻吋间为 20~50秒， 利用不同蚀刻溶液蚀刻不同金属， 形成如图 6所示的形貌。 [0049] Next, the pattern of the sacrificial layer is defined using a yellow light process. First etching the second sacrificial layer 23 2 using the first etching solution, and then etching the first sacrificial layer 231 using the second etching solution, wherein the second etching liquid does not substantially etch the second sacrificial layer, and etching different sacrificial layers by using different etching solutions And controlling the etch rate and the etched turns cause the double sacrificial layer to form a mushroom-like morphology that is long and short. In this embodiment, the second sacrificial layer is first etched using an HF: H 2 0 etching solution, and the etching time is 5 to 20 seconds, and then the first sacrificial layer is etched using an NH 4 OH: H 2 0 2 etching solution to etch the day. For 20 to 50 seconds, different metals are etched using different etching solutions to form a topography as shown in FIG.
[0050] 步骤 S130: 沉积透光层 240。 由于牺牲层 230呈上宽下窄状， 使得透光层 240覆 盖在牺牲层 230的部分 241与覆盖在 LED外延结构上表面的光反射区 210a的部分 24
2断幵， 如图 7所示。 由于蘑菇状的牺牲层设计， 透光层 240蒸镀后， 位于牺牲层 230上的部分 241 (欲去除部分） 即自动与位于光反射区的部分 242 (欲保留部分[0050] Step S130: depositing the light transmissive layer 240. Since the sacrificial layer 230 is upper and lower narrow, the light transmissive layer 240 covers the portion 241 of the sacrificial layer 230 and the portion 24 of the light reflecting region 210a covering the upper surface of the epitaxial structure of the LED. 2 broken, as shown in Figure 7. Due to the mushroom-shaped sacrificial layer design, after the light-transmissive layer 240 is evaporated, the portion 241 (the portion to be removed) on the sacrificial layer 230 is automatically and the portion 242 located in the light-reflecting region (to be retained)
) 剥离。 ) Stripped.
[0051] 步骤 S140: 去除牺牲层 230， 即完成剥离制程， 在 LED外延结构 210的光反射区 [0051] Step S140: removing the sacrificial layer 230, that is, completing the stripping process, in the light reflection region of the LED epitaxial structure 210
210a形成图形化的透光层 242。 210a forms a patterned light transmissive layer 242.
[0052] 然后， 在透光层 242和金属欧姆接触层 250上形成金属镜面层 260， 从而完成 LE[0052] Then, a metal mirror layer 260 is formed on the light transmissive layer 242 and the metal ohmic contact layer 250, thereby completing LE
D的镜面制作。 The mirror finish of D.
[0053] 在本实施例中， 由于牺牲层 230呈蘑菇状设计， 可以有效的避免定义图型边缘 残留， 此外其上下长度以及高度的落差， 搭配薄膜蒸镀机台的蒸镀特性， 达到 自动剥离的效果。 [0053] In the embodiment, since the sacrificial layer 230 has a mushroom-shaped design, the edge residual of the pattern can be effectively avoided, and the difference between the length of the upper and lower sides and the height is matched with the evaporation characteristics of the film evaporation machine to achieve automatic The effect of peeling.
[0054] 尽管已经描述本发明的示例性实施例， 但是理解的是， 本发明不应限于这些示 例性实施例而是本领域的技术人员能够在如下文的权利要求所要求的本发明的 精神和范围内进行各种变化和修改。
Although the exemplary embodiments of the present invention have been described, it is understood that the present invention is not limited to the exemplary embodiments but the spirit of the invention as claimed in the following claims Various changes and modifications are made within the scope.
Claims
( 1) 提供基材， 其上表面划分为第一区域和第二区域； (1) providing a substrate, the upper surface of which is divided into a first region and a second region;
(2) 在所述基材上表面的第一区域形成牺牲层， 所述牺牲层呈上宽 下窄状； (2) forming a sacrificial layer in a first region of the upper surface of the substrate, the sacrificial layer having an upper width and a lower narrow shape;
(3) 在所述基材的上表面沉积待剥离的材料层， 由于所述牺牲层呈 上宽下窄状， 使得所述材料层覆盖在所述牺牲层的部分与覆盖在所述 基材上表面的第二区域的部分断幵； (3) depositing a material layer to be peeled off on an upper surface of the substrate, wherein the sacrificial layer has an upper width and a lower narrow shape such that the material layer covers a portion of the sacrificial layer and covers the substrate Part of the second region of the upper surface is broken;
(4) 去除所述牺牲层， 从而将位于所述牺牲层表面上的材料层剥离 (4) removing the sacrificial layer to peel off the material layer on the surface of the sacrificial layer
[权利要求 5] 根据权利要求 4所述的一种剥离材料层的方法， 其特征在于： 所述步 骤 （2) 中形成的牺牲层依次包括第一牺牲层和第二牺牲层， 其结构 呈现第二金属牺牲层的长度大于第一金属牺牲层。 [Claim 5] A method of peeling off a material layer according to claim 4, wherein: the sacrificial layer formed in the step (2) comprises a first sacrificial layer and a second sacrificial layer in sequence, and the structure is presented The length of the second metal sacrificial layer is greater than the first metal sacrificial layer.
[权利要求 6] 根据权利要求 5所述的一种剥离材料层的方法， 其特征在于： 所述步 骤 (3) 包括： [Claim 6] A method of peeling a material layer according to claim 5, wherein: the step (3) comprises:
(a)蒸镀第一牺牲层， 接着蒸镀第二牺牲层， 其中第一牺牲层的蚀刻 速率大于第二牺牲层； ( a ) evaporating the first sacrificial layer, and then evaporating the second sacrificial layer, wherein the first sacrificial layer has an etching rate greater than the second sacrificial layer;
(b)定义牺牲层图形， 利用黄光制程定义出图形， 使用第一蚀刻液蚀
刻第二牺牲层， 接着使用第二蚀刻液蚀刻第一牺牲层， 利用不同蚀刻 溶液蚀刻不同牺牲层， 且控制蚀刻速率使其双牺牲层形成上长下短的 蘑菇状的形貌。 (b) Define the sacrificial layer pattern, define the pattern using the yellow light process, and use the first etching liquid to etch The second sacrificial layer is engraved, then the first sacrificial layer is etched using the second etchant, the different sacrificial layers are etched using different etching solutions, and the etch rate is controlled such that the double sacrificial layer forms a mushroom-like morphology that is long and short.
[权利要求 7] 根据权利要求 6所述的一种剥离材料层的方法， 其特征在于： 所述第 一牺牲层的材厚度为 100~2000nm。 [Claim 7] A method of peeling a material layer according to claim 6, wherein: the first sacrificial layer has a material thickness of 100 to 2000 nm.
[权利要求 8] 根据权利要求 6所述的一种剥离材料层的方法， 其特征在于： 所述第 二牺牲层的厚度为 10~200nm。 [Claim 8] A method of peeling off a material layer according to claim 6, wherein: the second sacrificial layer has a thickness of 10 to 200 nm.
[权利要求 9] 根据权利要求 5所述的一种剥离材料层的方法， 其特征在于： 所述第 一牺牲层的厚度高于所述材料层的厚度。 [Claim 9] A method of peeling a material layer according to claim 5, wherein: the thickness of the first sacrificial layer is higher than the thickness of the material layer.
[权利要求 10] 根据权利要求 4所述的一种剥离材料层的方法， 其特征在于： 所述牺 牲层的厚度大于所述材料层的厚度。 [Claim 10] A method of peeling a material layer according to claim 4, wherein: the thickness of the sacrificial layer is greater than the thickness of the material layer.
[权利要求 11] 一种发光二极管的镜面制作方法， 包括步骤： [Claim 11] A mirror manufacturing method of a light emitting diode, comprising the steps of:
(1) 提供一 LED外延结构， 具有对相的第一表面和第二表面， 其中 第一表面为出光面， 第二表面划分为欧姆接触区和光反射区； (1) providing an LED epitaxial structure having a first surface and a second surface of the opposite phase, wherein the first surface is a light exiting surface, and the second surface is divided into an ohmic contact region and a light reflecting region;
(2) 在所述 LED外延结构第二表面的欧姆接触区形成一牺牲层， 所 述牺牲层呈上宽下窄状； (2) forming a sacrificial layer in the ohmic contact region of the second surface of the epitaxial structure of the LED, the sacrificial layer being upper and lower narrow;
(3) 在所述外延结构的第二表面上沉积透光层， 由于所述牺牲层呈 上宽下窄状， 使得所述透光层覆盖在所述牺牲层的部分与覆盖在所述 外延结构第二表面的光反射区的部分断幵； (3) depositing a light transmissive layer on the second surface of the epitaxial structure, wherein the sacrificial layer has an upper width and a lower narrow shape such that the light transmissive layer covers a portion of the sacrificial layer and covers the epitaxial layer Part of the light reflecting region of the second surface of the structure is broken;
(4) 去除所述牺牲层， 从而将位于所述牺牲层表面上的透光层剥离 ， 形成图案化的透光层； (4) removing the sacrificial layer to peel the light transmissive layer on the surface of the sacrificial layer to form a patterned light transmissive layer;
(5) 在所述透光层上形成金属反射层。
(5) Forming a metal reflective layer on the light transmissive layer.
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| CN107403860B (en) | 2019-06-21 |
| CN107403860A (en) | 2017-11-28 |
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