CN102181824A - Process and structure of patterned substrate and light emitting diode chip - Google Patents

Process and structure of patterned substrate and light emitting diode chip Download PDF

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CN102181824A
CN102181824A CN2011100365990A CN201110036599A CN102181824A CN 102181824 A CN102181824 A CN 102181824A CN 2011100365990 A CN2011100365990 A CN 2011100365990A CN 201110036599 A CN201110036599 A CN 201110036599A CN 102181824 A CN102181824 A CN 102181824A
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substrate
patterned
alligatoring
layer
microns
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樊邦扬
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Guangdong Yinyu Chip Semiconductor Co ltd
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Guangdong Yinyu Chip Semiconductor Co ltd
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Abstract

The invention provides a process and a structure of a patterned substrate and a light emitting diode chip, and the process comprises the following steps: step 1, coating a photoresist layer on a sapphire substrate used for growing semiconductor epitaxial wafer; step 2, performing composition of the photoresist by exposure and development; step 3, sputtering a layer of a patterned coarse structure on the photoresist composition layer by an electron beam evaporation bench or a magnetron sputtering machine bentch; step 4, removing the photoresist, leaving the patterned coarse structure. Compared with the substrate etching process in the prior art, the structure of the invention has the advantages of no damage to the substrate, no requirement of professional dry and wet etching equipment, and the process of the invention greatly saves production cost, improves production efficiency, effectively prevents the generation of internal cracks on the substrate, facilitates the improvement of the quality of subsequent chip epitaxial wafers and the reduction of light total reflection, and moreover allows subsequent products to be more stable and have higher brightness. The invention also discloses a structure of a patterned substrate and a light emitting diode chip.

Description

A kind of technology of patterned substrate and structure thereof and light-emitting diode chip for backlight unit
Technical field
The invention belongs to technical field of semiconductor illumination, refer in particular to a kind of technology of patterned substrate, in addition the present invention's light-emitting diode chip for backlight unit of also disclosing a kind of structure of patterned substrate and adopting this substrate.
Background technology
With III-V family gan (GaN) is the nitride compound semiconductor of representative, has important and application widely as gan (GaN), aluminium nitride (AlN), indium nitride (InN), aluminium gallium nitride alloy (AlGaN), indium gallium nitride (InGaN), aluminum indium nitride (AlInN) or aluminum indium gallium nitride (AlGaInN) etc. at numerous areas such as UV/blue/green light LED, laser apparatus, sunlight blind UV electric explorer and high frequency, high temperature high power electron devices.Sapphire Substrate is that nitride carries out heteroepitaxial growth substrate the most commonly used at present.Because Sapphire Substrate and nitride epitaxial interlayer exist very macrolattice constant mismatch and thermal expansion coefficient difference, therefore utilize in the nitride epitaxial layer of metal organic chemical vapor deposition (MOCVD), hydride gas-phase epitaxy (HVPE) or molecular beam epitaxy (MBE) homepitaxy technology growth and have very big stress and a lot of lattice defects such as dislocation etc., therefore the crystal mass of material is subjected to very big influence, so deterioration device performance.Adopt the technology of graphic sapphire substrate (Improve sapphire substrate) can alleviate in Sapphire Substrate and the nitride epitaxial layer heteroepitaxial growth because the stress that lattice mismatch causes, make it to obtain effective relaxation, reduce the dislocation desity in the epitaxially grown nitride material greatly, crystal mass is greatly improved.But the technology of preparing of graphical sapphire substrate is to adopt traditional photolithography to prepare litho pattern mostly at present, be mask with silicon-dioxide (SiO2) or silicon nitride (SiN4) layer then, utilize reactive ion (RIE) or inductive couple plasma equipment dry etchings such as (ICP) to form again.Owing to relate to dry etching equipment in the technological process, so complex technical process, cost are higher.For the epitaxy of the nitride that more effectively is applied to low-dislocation-density, high-crystal quality, development cost patterned substrate technology low, that be easy to realize is imperative.
Summary of the invention
At the technical problem that exists in the prior art, the object of the present invention is to provide a kind of harmless substrate, manufacture craft is simple, light extraction efficiency is high patterned substrate manufacture craft, this Technology can effectively be avoided the generation of Sapphire Substrate internal fissure, and then the crystal mass and the homogeneity of raising epitaxial material, can reduce simultaneously the total reflection of light, finally farthest improve the light extraction efficiency of follow-up making chip.
In order to reach above-mentioned technical purpose, the invention provides a kind of technology of patterned substrate, it is characterized in that comprising the steps:
Step 1, on the Sapphire Substrate that is used for the growing semiconductor epitaxial wafer, apply one deck photoresist material;
Step 2, by exposure imaging with the photoresist material composition;
Step 3, pass through electron beam evaporation platform evaporation or the patterned alligatoring structure of magnetron sputtering board sputter one deck on the photoresist material patterned layer;
Step 4, removal photoresistance stay patterned alligatoring structure.
Preferably, carry out pyroprocessing after step 4, the temperature of described pyroprocessing is between 600 ℃～1200 ℃.
Preferably, the temperature of described pyroprocessing is between 800 ℃～1000 ℃.
Preferably, the temperature of described pyroprocessing is 800 ℃ or 850 ℃ or 900 ℃.
Preferably, the graphic element of described photoresist material composition is any or several the combining in circular, square, trapezoidal, regular hexagon, rhombus, trilateral or the irregular figure.
Preferably, the spacing between the graphic element of described photoresist material composition is between 2 microns to 5 microns, and described alligatoring thickness of structure is between 0.5 micron to 3 microns.
Preferably, described substrate is a Sapphire Substrate, and the material of described alligatoring structure is and the Al of Sapphire Substrate with the component different crystalline lattice 2O 3
The present invention's mode by evaporation or sputter on substrate is formed with patterned alligatoring structure, owing to adopt the mode of direct evaporation or sputter to form patterned alligatoring structure, so can not damage substrate, method with respect to etched substrate in the prior art, do not have and can damage substrate, the dry method that does not need specialty, the advantage of wet etching equipment, can save production cost significantly, enhance productivity, avoid the generation of substrate interior crackle effectively, grown epitaxial layer can obviously reduce dislocation desity and brilliant defective of heap of stone on this basis, patterned alligatoring structure can reduce the total reflection of light simultaneously, help to improve the external quantum efficiency of follow-up chip, and then make subsequent product more stable, brightness is higher.
The present invention also discloses a kind of structure of patterned substrate, it is characterized in that: be coated with the patterned alligatoring structure of one deck on the substrate.
Preferably, described substrate is a Sapphire Substrate, and the composition of described alligatoring structure is Al 2O 3
Preferably, the graphic element of described alligatoring structure is any or several the combining in circular, square, trapezoidal, regular hexagon, rhombus, trilateral or the irregular figure.
Preferably, the spacing between the graphic element of described photoresist material composition is between 2 microns to 5 microns, and described alligatoring thickness of structure is between 0.5 micron to 3 microns.
Preferably, the material of described alligatoring structure is and the Al of Sapphire Substrate with the component different crystalline lattice 2O 3
The present invention is coated with patterned alligatoring structure on substrate, owing to be on substrate, directly to be coated with patterned alligatoring structure, so can not damage substrate, structure with respect to etched substrate in the prior art, do not have and can damage substrate, the dry method that does not need specialty, the advantage of wet etching equipment, can save production cost significantly, enhance productivity, avoid the generation of substrate interior crackle effectively, grown epitaxial layer can obviously reduce dislocation desity and brilliant defective of heap of stone on this basis, patterned alligatoring structure can reduce the total reflection of light simultaneously, helps to improve the external quantum efficiency of follow-up chip, and then makes subsequent product more stable, brightness is higher.
The present invention also discloses a kind of light-emitting diode chip for backlight unit: comprise Sapphire Substrate, be grown in N type layer, luminescent layer, the P type layer on the substrate successively and be arranged on N type layer and P type layer on N electrode and P electrode, it is characterized in that: between described substrate and N type layer, be coated with the patterned alligatoring structure of one deck.
Preferably, the graphic element of described alligatoring structure is any or several the combining in circular, square, trapezoidal, regular hexagon, rhombus, trilateral or the irregular figure.
Preferably, described alligatoring thickness of structure is between 0.5 micron to 3 microns, and the spacing between the graphic element of described alligatoring structure is between 2 microns to 5 microns.
Preferably, described substrate is a Sapphire Substrate, and the material of described alligatoring structure is and the Al of Sapphire Substrate with the component different crystalline lattice 2O 3
Preferably, the back side of described Sapphire Substrate also is provided with the layer of metal reflecting layer.
Preferably, be provided with one deck buffer layer between described alligatoring structure and the N type layer.
Preferably, be provided with one deck current-diffusion layer between described P type layer and the P electrode.
Preferably, between described P type layer and current-diffusion layer, be formed with current barrier layer on the position of corresponding P electrode.
The present invention is coated with patterned alligatoring structure on substrate, structure with respect to etched substrate in the prior art, have the dry method that can not damage substrate, not need specialty, the advantage of wet etching equipment, therefore structure of the present invention can be avoided the generation of substrate interior crackle effectively, grown epitaxial layer can obviously reduce dislocation desity and brilliant defective of heap of stone on this basis, patterned alligatoring structure can reduce the total reflection of light simultaneously, help to improve the external quantum efficiency of light-emitting diode chip for backlight unit, and then make that light-emitting diode chip for backlight unit is stable more, brightness is higher.
Description of drawings
Fig. 1 is to Figure 4 shows that first kind of embodiment of the present invention;
Fig. 5 is to Figure 7 shows that second kind of embodiment of the present invention;
Figure 8 shows that the structural representation of light-emitting diode chip for backlight unit of the present invention;
Figure 9 shows that another structural representation of light-emitting diode chip for backlight unit of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further detailed description, the invention discloses a kind of technology of patterned substrate, specifically may further comprise the steps:
Step 1, as shown in Figure 1 applies one deck photoresist material 2 on the substrate 1 that is used for the growing semiconductor epitaxial wafer, the surface of described photoresist material 2 forms photosensitive region and photoresistance zone by mask;
Step 2, by exposure imaging with photoresist material 2 compositions, this moment, the photosensitive region on substrate 1 disappeared by exposure back, only stayed the photoresistance zone of compositionization on Sapphire Substrate 1; The graphic element 21 of photoresist material composition is any or several the combining in circular, square, trapezoidal, regular hexagon, rhombus, trilateral or the irregular figure, graphic element 21 as Fig. 2, photoresist material shown in Figure 52 compositions is square, trapezoidal, space D 1 between the graphic element 21 of described photoresist material composition is between 2 microns to 5 microns, adopt the figure of multiple photoresist material composition can make the further total reflection probability of reduction light of alligatoring structure 3, improve the light extraction efficiency of follow-up chip;
Step 3, as Fig. 3, shown in Figure 6, the patterned alligatoring structure 3 of sputter one deck on the photoresist material patterned layer by electron beam evaporation platform evaporation or magnetron sputtering board, the thickness H of described alligatoring structure 3 is between 0.5 micron to 3 microns;
Step 4, patterned photoresist material composition part (being the photoresistance part) is removed by the photoresist material scavenging solution, stay patterned alligatoring structure 3, space D 2 between the graphic element 31 of described alligatoring structure 3 is between 2 microns to 5 microns, as Fig. 4, shown in Figure 7.Show that by experiment it is best that D1, D2, H are controlled at alligatoring structure 3 its stability and the light extraction efficiency that form within the aforementioned numerical range.Substrate 1 preferred Sapphire Substrate of the present invention, the alligatoring structure 3 of this moment can be selected for use and the Al of Sapphire Substrate with the component different crystalline lattice 2O 3, because component is identical, so its associativity and mechanical property thereof can further be consolidated.
The present invention carries out The high temperature anneal after step 4, the temperature of described pyroprocessing is between 600 ℃～1200 ℃, the temperature of preferred pyroprocessing is between 800 ℃～1000 ℃, and wherein the temperature of pyroprocessing effect when 800 ℃ or 850 ℃ or 900 ℃ is better.The high temperature anneal can further be eliminated unrelieved stress, reduces and is out of shape and the crackle tendency, crystal grain thinning, adjustment tissue, elimination tissue defects.
The present invention also discloses a kind of structure of patterned substrate, as shown in Figure 4, is coated with the patterned alligatoring structure 3 of one deck on substrate 1.Described substrate 1 is selected Sapphire Substrate for use, and the composition of described alligatoring structure 3 is Al 2O 3The graphic element 31 of described alligatoring structure 3 is any or several the combining in circular, square, trapezoidal, regular hexagon, rhombus, trilateral or the irregular figure.Space D 2 between the graphic element 31 of described alligatoring structure 3 is between 2 microns to 5 microns, and the thickness H of described alligatoring structure 3 is between 0.5 micron to 3 microns.The material of described alligatoring structure 3 is and the Al of Sapphire Substrate with the component different crystalline lattice 2O 3
The present invention is coated with patterned alligatoring structure on substrate, owing to be on substrate, directly to be coated with patterned alligatoring structure, so can not damage substrate, structure with respect to etched substrate in the prior art, do not have and can damage substrate, the dry method that does not need specialty, the advantage of wet etching equipment, can save production cost significantly, enhance productivity, avoid the generation of substrate interior crackle effectively, grown epitaxial layer can obviously reduce dislocation desity and brilliant defective of heap of stone on this basis, patterned alligatoring structure can reduce the total reflection of light simultaneously, helps to improve the external quantum efficiency of follow-up chip, and then makes subsequent product more stable, brightness is higher.
The present invention also discloses a kind of light-emitting diode chip for backlight unit that adopts the former figures substrate: as shown in Figure 8, comprise substrate 1, be grown in N type layer 5, luminescent layer 6, the P type layer 7 on the substrate successively and be arranged on N electrode 10 and P electrode 9 on N type layer 5 and the P type layer 7, between described substrate 1 and N type layer 5, be coated with the patterned alligatoring structure 3 of one deck.Described substrate 1 is selected Sapphire Substrate for use, and the material of described alligatoring structure 3 is and the Al of Sapphire Substrate with the component different crystalline lattice 2O 3Also can between alligatoring structure 3 and N type layer 5, be provided with one deck buffer layer 4 in order to improve the quality that makes follow-up crystalline substance of heap of stone.The present invention also can form layer of metal reflecting layer 11 at the back side of Sapphire Substrate 1, reflexes to exiting surface by the part light that reflects chip, increases light extraction efficiency.The present invention also is provided with one deck current-diffusion layer 8 between P type layer 7 and P electrode 9, described current-diffusion layer 8 covers P type layer 7 fully, so that current uniform cloth, avoids the concentrations of electric current.In order to contain the electric current concentrations below P electrode 9, can between described P type layer 7 and current-diffusion layer 8, be formed with current barrier layer 81 on the position of corresponding P electrode 7, with this excessive gathering that reduces electric current, finally improve light extraction efficiency.
The graphic element 31 of described alligatoring structure 3 is any or several the combining in circular, square, trapezoidal, regular hexagon, rhombus, trilateral or the irregular figure, farthest reduce the total reflection of light with this, graphic element 31 wherein shown in Figure 8 is square, and graphic element 31 shown in Figure 9 is trapezoidal.
Described alligatoring thickness of structure H is between 0.5 micron to 3 microns, space D 2 between the graphic element of described alligatoring structure 3 is between 2 microns to 5 microns, the transverse width maximum value L of graphic element 31 is also between 2 microns to 5 microns, the graphic element 31 of alligatoring structure certainly, 3 can be also that differentiation is erratic arranges.Experimental results show that the graphic element 31 with alligatoring structure 3 can make its mechanical property, optical property can reach optimum performance according to being controlled within the aforementioned numerical range.
The present invention is coated with patterned alligatoring structure on substrate, structure with respect to etched substrate in the prior art, have the dry method that can not damage substrate, not need specialty, the advantage of wet etching equipment, therefore structure of the present invention can be avoided the generation of substrate interior crackle effectively, grown epitaxial layer can obviously reduce dislocation desity and brilliant defective of heap of stone on this basis, patterned alligatoring structure can reduce the total reflection of light simultaneously, help to improve the external quantum efficiency of light-emitting diode chip for backlight unit, and then make that light-emitting diode chip for backlight unit is stable more, brightness is higher.

Claims (20)

1. the technology of a patterned substrate is characterized in that may further comprise the steps:
Step 1, on the Sapphire Substrate that is used for the growing semiconductor epitaxial wafer, apply one deck photoresist material;
Step 2, by exposure imaging with the photoresist material composition;
Step 3, pass through electron beam evaporation platform evaporation or the patterned alligatoring structure of magnetron sputtering board sputter one deck on the photoresist material patterned layer;
Step 4, removal photoresistance stay patterned alligatoring structure.
2. the technology of a kind of patterned substrate according to claim 1, it is characterized in that: carry out pyroprocessing after step 4, the temperature of described pyroprocessing is between 600 ℃～1200 ℃.
3. the technology of a kind of patterned substrate according to claim 2, it is characterized in that: the temperature of described pyroprocessing is between 800 ℃～1000 ℃.
4. the technology of a kind of patterned substrate according to claim 3, it is characterized in that: the temperature of described pyroprocessing is 800 ℃ or 850 ℃ or 900 ℃.
5. according to the technology of each described a kind of patterned substrate of claim 1 to 4, it is characterized in that: the graphic element of described photoresist material composition is any or several the combining in circular, square, trapezoidal, regular hexagon, rhombus, trilateral or the irregular figure.
6. the technology of a kind of patterned substrate according to claim 5, it is characterized in that: the spacing between the graphic element of described photoresist material composition is between 2 microns to 5 microns, and described alligatoring thickness of structure is between 0.5 micron to 3 microns.
7. according to the technology of each described a kind of patterned substrate of claim 1 to 6, it is characterized in that: described substrate is a Sapphire Substrate, and the material of described alligatoring structure is and the Al of Sapphire Substrate with the component different crystalline lattice 2O 3
8. the structure of a patterned substrate is characterized in that: be coated with the patterned alligatoring structure of one deck on the substrate.
9. the structure of patterned substrate according to claim 8 is characterized in that, described substrate is a Sapphire Substrate, and the composition of described alligatoring structure is Al 2O 3
10. the structure of patterned substrate according to claim 9 is characterized in that, the graphic element of described alligatoring structure is any or several the combining in circular, square, trapezoidal, regular hexagon, rhombus, trilateral or the irregular figure.
11. the structure of a kind of patterned substrate according to claim 10 is characterized in that: the spacing between the graphic element of described photoresist material composition is between 2 microns to 5 microns, and described alligatoring thickness of structure is between 0.5 micron to 3 microns.
12. the structure according to each described a kind of patterned substrate of claim 9 to 11 is characterized in that: the material of described alligatoring structure is and the Al of Sapphire Substrate with the component different crystalline lattice 2O 3
13. light-emitting diode chip for backlight unit: comprise substrate, be grown in N type layer, luminescent layer, the P type layer on the substrate successively and be arranged on N type layer and P type layer on N electrode and P electrode, it is characterized in that: between described substrate and N type layer, be coated with the patterned alligatoring structure of one deck.
14. a kind of light-emitting diode chip for backlight unit according to claim 13 is characterized in that: the graphic element of described alligatoring structure is any or several the combining in circular, square, trapezoidal, regular hexagon, rhombus, trilateral or the irregular figure.
15. light-emitting diode chip for backlight unit according to claim 14 is characterized in that: described alligatoring thickness of structure is between 0.5 micron to 3 microns, and the spacing between the graphic element of described alligatoring structure is between 2 microns to 5 microns.
16. the technology according to each described a kind of patterned substrate of claim 13 to 15 is characterized in that: described substrate is a Sapphire Substrate, and the material of described alligatoring structure is and the Al of Sapphire Substrate with the component different crystalline lattice 2O 3
17. light-emitting diode chip for backlight unit according to claim 16 is characterized in that: the back side of described Sapphire Substrate also is provided with the layer of metal reflecting layer.
18. light-emitting diode chip for backlight unit according to claim 17 is characterized in that: be provided with one deck buffer layer between described alligatoring structure and the N type layer.
19. light-emitting diode chip for backlight unit according to claim 18 is characterized in that: be provided with one deck current-diffusion layer between described P type layer and the P electrode.
20. light-emitting diode chip for backlight unit according to claim 19 is characterized in that: between described P type layer and current-diffusion layer, be formed with current barrier layer on the position of corresponding P electrode.
CN2011100365990A 2011-01-27 2011-01-27 Process and structure of patterned substrate and light emitting diode chip Pending CN102181824A (en)

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CN102912291A (en) * 2012-10-30 2013-02-06 启翔科技有限公司 Method for forming patterns on metal surface by vacuum coating
CN103066173A (en) * 2012-12-12 2013-04-24 华灿光电股份有限公司 Light-emitting diode (LED) chip and preparation method thereof
CN104201270A (en) * 2014-09-24 2014-12-10 杭州士兰明芯科技有限公司 LED substrate structure and production method thereof
CN104269485A (en) * 2014-09-24 2015-01-07 杭州士兰明芯科技有限公司 LED substrate structure and manufacturing method of LED substrate structure
CN105047783A (en) * 2015-05-31 2015-11-11 厦门大学 Nitride semiconductor light-emitting device and preparation method thereof
CN105679905A (en) * 2016-01-19 2016-06-15 上海万寅安全环保科技有限公司 Semiconductor chip
CN105951049A (en) * 2016-05-13 2016-09-21 中山大学 Preparation method of metal particles with nanoscale gaps
CN108807630A (en) * 2017-04-27 2018-11-13 中国科学院苏州纳米技术与纳米仿生研究所 Semiconductor devices and preparation method thereof based on graphical template
CN109192846A (en) * 2018-08-31 2019-01-11 宁波天炬光电科技有限公司 Accessory grade low cost surface treatment method and a kind of device
CN109468602A (en) * 2018-12-21 2019-03-15 东北大学 A kind of TiAlTaN/WS self-lubricating composite coating and preparation method thereof

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102912291A (en) * 2012-10-30 2013-02-06 启翔科技有限公司 Method for forming patterns on metal surface by vacuum coating
CN103066173A (en) * 2012-12-12 2013-04-24 华灿光电股份有限公司 Light-emitting diode (LED) chip and preparation method thereof
CN103066173B (en) * 2012-12-12 2016-04-20 华灿光电股份有限公司 A kind of preparation method of light-emitting diode chip for backlight unit
CN104201270B (en) * 2014-09-24 2017-07-28 杭州士兰明芯科技有限公司 LED substrate structure and preparation method thereof
CN104201270A (en) * 2014-09-24 2014-12-10 杭州士兰明芯科技有限公司 LED substrate structure and production method thereof
CN104269485A (en) * 2014-09-24 2015-01-07 杭州士兰明芯科技有限公司 LED substrate structure and manufacturing method of LED substrate structure
CN104269485B (en) * 2014-09-24 2018-03-06 杭州士兰明芯科技有限公司 LED substrate structure and preparation method thereof
CN105047783A (en) * 2015-05-31 2015-11-11 厦门大学 Nitride semiconductor light-emitting device and preparation method thereof
CN105047783B (en) * 2015-05-31 2018-04-13 厦门大学 A kind of nitride semiconductor photogenerator and preparation method thereof
CN105679905A (en) * 2016-01-19 2016-06-15 上海万寅安全环保科技有限公司 Semiconductor chip
CN105951049A (en) * 2016-05-13 2016-09-21 中山大学 Preparation method of metal particles with nanoscale gaps
CN105951049B (en) * 2016-05-13 2018-04-13 中山大学 A kind of metallic particles manufacture method with nanoscale gap
CN108807630A (en) * 2017-04-27 2018-11-13 中国科学院苏州纳米技术与纳米仿生研究所 Semiconductor devices and preparation method thereof based on graphical template
CN109192846A (en) * 2018-08-31 2019-01-11 宁波天炬光电科技有限公司 Accessory grade low cost surface treatment method and a kind of device
CN109468602A (en) * 2018-12-21 2019-03-15 东北大学 A kind of TiAlTaN/WS self-lubricating composite coating and preparation method thereof
CN109468602B (en) * 2018-12-21 2020-06-23 东北大学 TiAlTaN/WS self-lubricating composite coating and preparation method thereof

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Application publication date: 20110914