CN1319139C - Production of local vacuum sealing protective structure of silicon based sensor flexible piece - Google Patents
Production of local vacuum sealing protective structure of silicon based sensor flexible piece Download PDFInfo
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- CN1319139C CN1319139C CNB200410101005XA CN200410101005A CN1319139C CN 1319139 C CN1319139 C CN 1319139C CN B200410101005X A CNB200410101005X A CN B200410101005XA CN 200410101005 A CN200410101005 A CN 200410101005A CN 1319139 C CN1319139 C CN 1319139C
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Abstract
The present invention relates to a manufacturing method for a movable piece local vacuum seal protective structure of a silicon base sensor. A silicon cap and a movable piece of a silicon base sensor chip carry out vacuum seal encapsulation, and the movable piece local vacuum seal protective structure is formed. The method comprises the processing steps: making the silicon cap; making metal masking stencil plates according to designed seal ring figures; leaking and printing seal slurry materials on the surface of a seal ring of the silicon base sensor chip; sealing the silicon cap and the seal slurry materials under vacuum environment. The method is used for making the local vacuum seal protective structure when the sealing surface of the movable piece of the silicon base sensor in microelectron machinery systems (MEMS).
Description
(1) technical field
The present invention relates to a kind of manufacture method of local vacuum sealing protective structure of silicon based sensor flexible piece, the making of the local vacuum sealing protective structure when being used on the silicon based sensor flexible piece sealing surface of microelectron-mechanical (MEMS) interconnection line being arranged.
(2) background technology
As everyone knows, if the reliable and stable work of micromachined silicon based sensor, the protection of movable piece just becomes the necessary condition of reliable and stable work.It is that device integral body or part are sealed that movable piece is protected effective method, and the movable piece protection is divided into general protection and vacuum seal is protected.So-called general protection is exactly to belong to the integrated circuit packaged type, as spot welding, parallel seam welding, scolder weldering, cold welding and plastics sealing-in etc.And the vacuum seal protected mode is that senser element is placed vacuum environment, uses special technology such as electrostatic bonding, alloyed silicon solder, low-melting-point glass scolder etc. and encapsulates.The reason that adopts the vacuum seal protection is because the movable member of this class device only just can carry out undamped motion in the vacuum seal environment, normal steady operation just when air resistance is arranged.For example all there are the protection problem of movable piece in resonance type pressure sensor, gyro sensor etc., and are to belong to the vacuum leakproofness protection.
Current movable piece vacuum seal guard method is to close at single silicon one glass electrostatic bonding and silicon-silicon bond that sealing surface does not have an interconnection line.Sealing surface to movable piece has the manufacture method Yet-have of the local vacuum sealing protective structure of interconnection line not have report at present.Represented an existing silicon based sensor chip among Fig. 1, wherein had a movable piece 1, interconnection line 2 is arranged on the movable piece 1, movable piece 1 is produced on the silicon chip 3, silicon chip 3 and silica-based 4 bondings, silica-based 4 with 5 bondings at the bottom of the glass.Fig. 2 is illustrated on the sensor flexible piece 1 among Fig. 1 by the vacuum seal protection structure of solder glass 7 with 6 encapsulation of silicon cap.
(3) summary of the invention
Technical problem to be solved by this invention is to invent a kind of manufacture method of local vacuum sealing protective structure of silicon based sensor flexible piece; make when on the silicon based sensor flexible piece sealing surface, interconnection line being arranged and to be made into local vacuum sealing protective structure easily, work reliable and stablely to guarantee movable piece.
The technical scheme that the present invention solves the problems of the technologies described above is the movable piece of silicon cap and silicon based sensor chip is carried out the vacuum leakproofness encapsulation, forms the movable piece local vacuum sealing protective structure, and its manufacture method includes following step:
(1) makes the silicon cap;
(2) by the sealing ring graphic making metallic mask that designs;
(3) the sealing slurry of on silicon based sensor chip sealing ring surface, biting;
(4) under vacuum environment, with silicon cap and the sealing of sealing slurry.
The processing step of making the silicon cap is:
(1) by silicon cap design configuration unpolished silicon chip is sheltered;
(2) form silicon cap chamber with chemical corrosion method.
Described chemical corrosion method is to use hydrofluoric acid: ammonium fluoride: water=3ml: 6g: the silicon dioxide on surface, 10ml solution corrosion silicon cap chamber; Use nitric acid again: hydrofluoric acid=10: 1 solution corrosion silicon dioxide 8-10 minute forms the dark silicon cap chamber of 6--10 μ m.
The method that seals slurry of biting on silicon based sensor chip sealing ring surface is:
(1) the low-melting-point glass powder is modulated into the sealing slurry with alcohol;
(2) on the position in addition, silicon based sensor chip sealing ring surface that seals slurry of waiting to bite, apply the photoresist protective layer;
(3) make the roughened silicon on silicon based sensor chip sealing ring surface with chemical corrosion method;
(4) will seal slurry with described metallic mask bites on the described sealing ring surface;
(5) will bite silicon based sensor chip prebake conditions 15 minutes in 200 ℃ of baking ovens of sealing slurry.
Described chemical corrosion method is to use hydrofluoric acid: 50% rare nitric acid: the solution that the ratio of glacial acetic acid=1: 3: 1 is mixed with is at normal temperatures to the silicon corrosion on sealing ring surface 1 minute.
Under vacuum environment, the silicon cap with the method for sealing slurry sealing is:
(1) the silicon cap is placed on the sealing slurry of oven dry,, and be loaded in the quartz boat with the briquetting pressurization of 10 grams;
(2) the above-mentioned quartz boat that the silicon based sensor chip is housed is placed vacuum degree 133 * 10
-3Pa, heating pushed the cooling zone cooling and takes out after 10--20 minute after 6--10 minute in the vacuum furnace that temperature is 460 ± 10 ℃, promptly made described local vacuum sealing protective structure of silicon based sensor flexible piece.
Beneficial effect.Because the present invention adopted above-mentioned technical scheme, be made into the local vacuum sealing protective structure of movable piece in the time of on silicon based sensor flexible piece, interconnection line being arranged easily, guaranteed that movable piece works reliable and stablely.
(4) description of drawings
Fig. 1 is the structural profile schematic diagram of existing a kind of silicon based sensor chip of the present invention;
Fig. 2 is with the generalized section behind the making local vacuum sealing protective structure on the movable piece of the silicon based sensor chip of the inventive method in Fig. 1.
(5) embodiment
The specific embodiment of the present invention is not limited only to following description, below in conjunction with accompanying drawing the inventive method is further specified.The inventive method may further comprise the steps:
1, press silicon cap design configuration and make silicon cap 6, concrete processing step is:
(1) by silicon cap 6 design configurations unpolished silicon chip is sheltered.The method of sheltering is that (for example KPR glue) part that will design beyond the silicon cap chamber is sheltered with photoresist, exposes silicon cap chamber.
(2) form silicon cap chamber 8 with chemical corrosion method.Described chemical corrosion method is to use hydrofluoric acid: ammonium fluoride: water=3ml: 6g: the silicon dioxide (SiO on surface, 10ml solution corrosion silicon cap chamber
2); Use nitric acid again: hydrofluoric acid=10: 1 solution corrosion silicon dioxide (SiO
2) following silicon 8--10 minute, form the dark silicon cap chamber 8 of 6--10 μ m.
2, by the sealing ring graphic making metallic mask that designs.Promptly with method in common with sealing ring graph data input computer, on the thick stainless steel substrates of 0.1mm, adopt KLS-126 laser machine engraving erosion, follow procedure is made into metallic mask.
3, the sealing slurry of on silicon based sensor chip sealing ring surface, biting.Its processing step is:
(1) the low-melting-point glass powder is modulated into the sealing slurry with alcohol.The NS series low-melting-point glass powder that the low-melting-point glass powder adopts Chinese building material research institute glass research institute to produce is used method in common, and the alcohol with 10～20% is modulated into the sealing slurry.
(2) on the position in addition, silicon based sensor chip sealing ring surface that seals slurry of waiting to bite, apply photoresist (for example KPR glue) protective layer.
(3) make the roughened silicon on silicon based sensor chip sealing ring surface with chemical corrosion method.Described chemical corrosion method is: use hydrofluoric acid: 50% rare nitric acid: the solution that the ratio of glacial acetic acid=1: 3: 1 is mixed with is at normal temperatures to the silicon corrosion on sealing ring surface 1 minute.
(4) will seal slurry with described metallic mask bites on the described sealing ring surface.Be about in the anchor clamps that silicon based sensor chip to be bitten is placed on the manual screen process press of SY-00 that Chinese panda group produces, vacuum holds, and the adjustment alignment mark puts metallic mask, and the sealing slurry that modulates is bitten on the sealing ring.
(5) will bite silicon based sensor chip prebake conditions 15 minutes in 200 ℃ of baking ovens of sealing slurry.
4, under vacuum environment, with silicon cap 6 and the sealing of sealing slurry.Its processing step is:
(1) silicon cap 6 is placed on the sealing slurry of oven dry,, and be loaded in the quartz boat, treat that equipment operation is normal with the briquetting pressurization of 10 grams;
(2) the described quartz boat that the silicon based sensor chip is housed is placed vacuum degree 133 * 10
-3Pa, heating is after 6--10 minute in the vacuum furnace that temperature is 460 ± 10 ℃, and the sealing slurry is converted into solder glass 7, pushes the cooling zone cooling and takes out after 10--20 minute, finishes the making of described local vacuum sealing protective structure of silicon based sensor flexible piece.
Among Fig. 1, Fig. 2,1 expression movable piece, 2 expression interconnection lines, 3 expression silicon chips, 4 expressions are silica-based, at the bottom of the 5 expression glass, 6 expression silicon caps, 7 expression solder glasses, 8 expression silicon cap chambeies.All used chemical reagent of the inventive method are chemical pure.
Claims (5)
1, a kind of manufacture method of local vacuum sealing protective structure of silicon based sensor flexible piece; the movable piece of silicon cap and silicon based sensor chip is carried out the vacuum leakproofness encapsulation; form the movable piece local vacuum sealing protective structure, it is characterized in that: this method includes following steps:
(1) makes the silicon cap;
(2) by the sealing ring graphic making metallic mask that designs;
(3) on the position in addition, silicon based sensor chip sealing ring surface that seals slurry of waiting to bite, apply the photoresist protective layer, make the roughened silicon on silicon based sensor chip sealing ring surface with chemical corrosion method, the sealing slurry that the low-melting-point glass powder is modulated into alcohol with described metallic mask is bitten on the described sealing ring surface, with the silicon based sensor chip of the sealing slurry of biting prebake conditions 15 minutes in 200 ℃ of baking ovens;
(4) under vacuum environment, with silicon cap and the sealing of sealing slurry.
2, the manufacture method of local vacuum sealing protective structure of silicon based sensor flexible piece according to claim 1 is characterized in that: the processing step of making the silicon cap is:
(1) by silicon cap design configuration unpolished silicon chip is sheltered;
(2) form silicon cap chamber with chemical corrosion method.
3, the manufacture method of local vacuum sealing protective structure of silicon based sensor flexible piece according to claim 2 is characterized in that: described chemical corrosion method is to use hydrofluoric acid: ammonium fluoride: water=3ml: 6g: the silicon dioxide on surface, 10ml solution corrosion silicon cap chamber; Use nitric acid again: below hydrofluoric acid=10: the 1 solution corrosion silicon dioxide silicon 8--10 minute forms the dark silicon cap chamber of 6--10 μ m.
4, the manufacture method of local vacuum sealing protective structure of silicon based sensor flexible piece according to claim 1 is characterized in that: described chemical corrosion method is to use hydrofluoric acid: 50% rare nitric acid: the solution that the ratio of glacial acetic acid=1: 3: 1 is mixed with is at normal temperatures to the silicon corrosion on sealing ring surface 1 minute.
5, the manufacture method of local vacuum sealing protective structure of silicon based sensor flexible piece according to claim 1 is characterized in that: under vacuum environment, the silicon cap with the method for sealing slurry sealing is:
(1) the silicon cap is placed on the sealing slurry of oven dry,, and be loaded in the quartz boat with the briquetting pressurization of 10 grams;
(2) the described quartz boat that the silicon based sensor chip is housed is placed vacuum degree 133 * 10
-3Pa, heating pushed the cooling zone cooling and takes out after 10--20 minute after 6--10 minute in the vacuum furnace that temperature is 460 ± 10 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410101005XA CN1319139C (en) | 2004-12-01 | 2004-12-01 | Production of local vacuum sealing protective structure of silicon based sensor flexible piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410101005XA CN1319139C (en) | 2004-12-01 | 2004-12-01 | Production of local vacuum sealing protective structure of silicon based sensor flexible piece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1645059A CN1645059A (en) | 2005-07-27 |
| CN1319139C true CN1319139C (en) | 2007-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB200410101005XA Expired - Fee Related CN1319139C (en) | 2004-12-01 | 2004-12-01 | Production of local vacuum sealing protective structure of silicon based sensor flexible piece |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100494046C (en) * | 2006-03-10 | 2009-06-03 | 中国科学院上海微系统与信息技术研究所 | Structure and production of air-sealed packaged micromechanical system device with convex point connection |
| CN102636301A (en) * | 2012-04-28 | 2012-08-15 | 无锡永阳电子科技有限公司 | Method of adhering sensor chips |
| CN114279896A (en) * | 2020-09-27 | 2022-04-05 | 上海交通大学 | Sealing chamber seat dripping method for observing wetting angle of molten aluminum |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1199927A (en) * | 1997-05-17 | 1998-11-25 | 现代电子产业株式会社 | Encapsulated integrated circuit component and its producing method |
| CN1204144A (en) * | 1997-06-27 | 1999-01-06 | 松下电子工业株式会社 | Method for making resin packaging semiconductor device |
| CN1289659A (en) * | 2000-09-15 | 2001-04-04 | 北京大学 | Low-temp MEMS vacuum sealing technique for metals |
| US6638784B2 (en) * | 1999-06-24 | 2003-10-28 | Rockwell Collins, Inc. | Hermetic chip scale packaging means and method including self test |
| US20040152229A1 (en) * | 2002-10-18 | 2004-08-05 | Khalil Najafi | Manufacturing methods and vacuum or hermetically packaged micromachined or MEMS devices formed thereby having substantially vertical feedthroughs |
| US20040219706A1 (en) * | 2002-08-07 | 2004-11-04 | Chang-Fegn Wan | System and method of fabricating micro cavities |
-
2004
- 2004-12-01 CN CNB200410101005XA patent/CN1319139C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1199927A (en) * | 1997-05-17 | 1998-11-25 | 现代电子产业株式会社 | Encapsulated integrated circuit component and its producing method |
| CN1204144A (en) * | 1997-06-27 | 1999-01-06 | 松下电子工业株式会社 | Method for making resin packaging semiconductor device |
| US6638784B2 (en) * | 1999-06-24 | 2003-10-28 | Rockwell Collins, Inc. | Hermetic chip scale packaging means and method including self test |
| CN1289659A (en) * | 2000-09-15 | 2001-04-04 | 北京大学 | Low-temp MEMS vacuum sealing technique for metals |
| US20040219706A1 (en) * | 2002-08-07 | 2004-11-04 | Chang-Fegn Wan | System and method of fabricating micro cavities |
| US20040152229A1 (en) * | 2002-10-18 | 2004-08-05 | Khalil Najafi | Manufacturing methods and vacuum or hermetically packaged micromachined or MEMS devices formed thereby having substantially vertical feedthroughs |
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| CN1645059A (en) | 2005-07-27 |
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