CN1315905C - 环氧树脂组合物和半导体器件 - Google Patents
环氧树脂组合物和半导体器件 Download PDFInfo
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- CN1315905C CN1315905C CNB2004800030641A CN200480003064A CN1315905C CN 1315905 C CN1315905 C CN 1315905C CN B2004800030641 A CNB2004800030641 A CN B2004800030641A CN 200480003064 A CN200480003064 A CN 200480003064A CN 1315905 C CN1315905 C CN 1315905C
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- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
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- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- YJEWDEVBKVTRPO-UHFFFAOYSA-N naphthalene-1-carbonylperoxyboronic acid Chemical class B(O)(O)OOC(=O)C1=CC=CC2=CC=CC=C21 YJEWDEVBKVTRPO-UHFFFAOYSA-N 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/4007—Curing agents not provided for by the groups C08G59/42 - C08G59/66
- C08G59/4014—Nitrogen containing compounds
- C08G59/4042—Imines; Imides
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
- C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
- C08L2666/66—Substances characterised by their function in the composition
- C08L2666/72—Fillers; Inorganic pigments; Reinforcing additives
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
本发明的目的是提供用于封装半导体的环氧树脂组合物,在没有使用含溴有机化合物和锑化合物的情况下,其流动性、对基底的粘合性、阻燃性和抗焊接开裂性优良。根据本发明,提供用于封装半导体的环氧树脂组合物,其特征在于包括具有联苯基结构的酚醛芳烷基类环氧树脂,具有联苯基结构的酚醛芳烷基树脂,固化促进剂,无机填料,具有仲胺的特定的硅烷偶联剂,和具有巯基的特定的硅烷偶联剂作为基本组分。
Description
技术领域
本发明涉及用于封装半导体的环氧树脂组合物,和使用该组合物获得的半导体器件。
发明背景
作为封装半导体元件如IC和LSI的方法,已长时间地使用环氧树脂组合物的压铸,因为它成本低且适于批量生产。此外,关于可靠性,已通过改良作为固化剂的环氧树脂或酚醛树脂来尝试特征的改进。然而,根据电子设备的小型化、轻质和高性能的最近市场需求,逐年提高了半导体的高度集成化。此外,半导体器件的区域安装正变得更方便,因此对用于封装半导体的环氧树脂的要求日益苛刻。因此,存在常规的环氧树脂组合物不可能解决的问题。
通常将含溴有机化合物和锑化合物如三氧化锑和四氧化锑加入到环氧树脂组合物中,为的是赋予组合物阻燃性,但从环境和卫生角度考虑,使用这些化合物是非所需的。在这种情况下,已提出使用在结构内具有许多芳环的树脂作为在没有使用含溴有机化合物和锑化合物的情况下,阻燃性优良的环氧树脂组合物(参见,流入JP-A-11-140277,尤其第2-11页)。然而,具有许多芳环的树脂的缺陷是粘度增加。
此外,为了在印刷电路板上安装半导体器件,已使用含铅焊剂(锡-铅合金),但从环境和卫生角度考虑,同样理想的是不使用含铅焊剂(锡-铅合金)。含铅焊剂(锡-铅合金)的熔点为183℃,和安装半导体器件的焊接温度为220-240℃,而不含铅的焊剂,如锡-银合金,具有较高的熔点和焊接温度为约260℃。因此,在浸焊或回焊步骤中施加到半导体器件上的应力增加,结果在半导体器件内,尤其在半导体元件、引线框架和内部引线上引起在固化的环氧树脂与进行过各种镀敷如镀金或镀银的每一粘接部分之间的界面处脱层,从而导致可靠性的显著劣化。
为了解决因焊接处理引起的可靠性劣化的问题,提出增加包含在环氧树脂组合物内的无机填料量的方法,以实现吸湿性的下降,强度的增加和热膨胀的下降,从而改进抗焊接开裂性;和使用低熔体粘度树脂的方法,从而维持模塑过程中的低粘度和高流动性(参见,例如JP-A-64-65116,尤其第2-7页)。可通过使用上述方法显著改进抗焊接开裂性,但问题是随着无机填料的填充比增加,流动性牺牲和在封装件内容易产生孔隙。因此,进一步提出添加各种偶联剂如氨基硅烷使流动性和抗焊接开裂性二者一起共存(参见,例如JP-A-2-218735,尤其第1-9页)。然而,不可能防止在固化环氧树脂组合物和进行各种镀敷如镀金或镀银的每一粘接部分之间的界面处的脱层,和仍然不可能获得具有充分满意的抗焊接开裂性的用于封装半导体的环氧树脂组合物。
发明公开
本发明的目的是提供流动性和抗焊接开裂性优良的用于封装半导体的环氧树脂组合物,和使用该组合物获得的半导体器件。
也就是说,本发明提供[1]一种用于封装半导体的环氧树脂组合物,它包括(A)下式(1)表示的环氧树脂,(B)下式(2)表示的酚醛树脂,(C)固化促进剂,(D)无机填料,(E)下式(3)表示的硅烷偶联剂,和(F)下式(4)表示的硅烷偶联剂作为基本组分:
其中R1和R2各自表示氢原子或1-4个碳原子的烷基,和可以相同或不同,a是0-3的一个整数,b是0-4的一个整数,和n是平均值,为1-5的一个正数,
其中R1和R2各自表示氢原子或1-4个碳原子的烷基,和可以相同或不同,a是0-3的一个整数,b是0-4的一个整数,和n是平均值,为1-5的一个正数;
R1-NH-R2-Si(OR3)nR4 3-n (3)
其中R1表示1-12个碳原子的有机基团,R2、R3和R4各自表示1-12个碳原子的烃基,和n是1-3的一个整数;和
HS-R5-Si(OR6)nR7 3-n (4)
其中R5表示1-12个碳原子的有机基团,R6和R7各自表示1-12个碳原子的烃基,和n是1-3的一个整数。
本发明进一步提供[2]一种通过使用上述[1]中用于封装半导体的环氧树脂组合物封装半导体元件而获得的半导体器件。
实施本发明的模式
式(1)表示的本发明中使用的环氧树脂在环氧基之间具有疏水性和刚性的亚联苯基,并且在超过玻璃化转变温度(下文称为“Tg”)的高温区域内含环氧树脂的环氧树脂组合物的固化产物的吸湿性低且弹性模量低,而且对半导体元件、有机基底和金属基底的粘合性优良。由于其交联密度低,因此它进一步拥有耐热性高的特征。
式(1)内的数值n是平均值,为1-5的一个正数,优选1-3。若n低于下限,则环氧树脂组合物的固化性可能劣化。若n超过上限,则环氧树脂的粘度增加和环氧树脂组合物的流动性可能下降。式(1)表示的环氧树脂可单独使用或两种或多种组合使用。
在式(1)表示的环氧树脂当中,特别优选下式(5)表示的环氧树脂。
可一起使用其它环氧树脂,只要式(1)表示的环氧树脂的固有性能没有受到损害即可。在一起使用其它环氧树脂的情况下,希望通常使用在分子内具有环氧基且粘度尽可能低的单体、低聚物或聚合物。作为其它环氧树脂,可提及例如苯酚酚醛清漆类环氧树脂,甲酚酚醛清漆类环氧树脂,联苯类环氧树脂,双酚类环氧树脂,芪类环氧树脂,三苯甲烷类环氧树脂,酚醛芳烷基类环氧树脂(具有亚苯基结构),萘酚类环氧树脂,亚萘基类环氧树脂,烷基改性的三苯酚甲烷类环氧树脂,含三嗪环的环氧树脂,二环戊二烯改性的酚醛类环氧树脂等。这些可单独使用或两种或多种组合使用。
基于环氧树脂的总重量,式(1)表示的环氧树脂的用量优选不小于30wt%,特别优选不小于50wt%。若该用量低于下限,则阻燃性倾向于不足。
式(2)表示的在本发明中使用的酚醛树脂在酚羟基之间具有疏水性和刚性的亚联苯基结构,和在超过Tg的高温区域内,含有该酚醛树脂的环氧树脂组合物的固化产物的吸湿性低和弹性模量低,和对半导体元件、有机基底和金属基底的粘合优良。由于其交联密度低,因此它进一步拥有耐热性高的特征。
式(2)中的数值n是平均值和是1-5的一个正数,优选1-3。若n低于下限,则环氧树脂组合物的固化性可能劣化。若n超过上限,则环氧树脂组合物的粘度增加和流动性可能下降。式(2)表示的酚醛树脂可各自单独或结合两种或多种使用。
在式(2)表示的酚醛树脂当中,特别优选下式(6)表示的酚醛树脂。
可与式(2)表示的酚醛树脂一起使用其它酚醛树脂,只要式(2)表示的酚醛树脂的固有性能没有受到损害即可。在使用其它酚醛树脂的情况下,希望通常使用在分子内具有酚羟基且粘度尽可能低的单体、低聚物或聚合物。作为其它酚醛树脂,可提及例如苯酚酚醛清漆类环氧树脂,甲酚酚醛清漆类环氧树脂,酚醛芳烷基类环氧树脂(具有亚苯基结构),萘酚芳烷基树脂,三苯甲烷树脂,萜烯改性的酚醛树脂,二环戊二烯改性的酚醛树脂等。这些可单独使用或两种或多种组合使用。
基于酚醛树脂的总重量,式(2)表示的酚醛树脂的用量优选不小于30wt%,特别优选不小于50wt%。若该用量低于下限,则阻燃性倾向于不足。
在全部环氧树脂内的环氧基和在全部酚醛树脂内的酚羟基的当量比优选0.5-2,更优选0.7-1.5。若该比值在上述范围以外,则耐湿性、固化性等可能劣化。
没有特别限制在本发明中使用的无机填料,和其实例是煅制的粉碎氧化硅,煅制的球形氧化硅,结晶氧化硅,二次聚集的氧化硅,氧化铝,钛白,氢氧化铝,氢氧化镁,硼酸锌,钼酸锌等,和特别优选煅制的球形氧化硅。至于煅制的球形氧化硅的形状,优选地,为了达到优异的流动性,该形状无限接近真正的球形,和颗粒尺寸分布宽。
没有特别限制所有无机物(其中包括无机填料和任选地添加的金属氢氧化物,无机离子交换剂等)的含量,但在全部环氧树脂组合物内,优选不小于84wt%,和不大于94wt%。若该含量低于下限,则不可能实现环氧树脂组合物的固化产物的低吸湿性,这可能导致不足的抗焊接开裂性。若它超过上限,则可能出现诸如模塑不足(这是由于环氧树脂组合物的流动性下降所致)或者在半导体器件内金线劣化(这是由于粘度增加所致)之类的麻烦。
在没有使用含溴有机化合物和锑化合物的情况下,本发明使环氧树脂组合物产生阻燃性。在全部环氧树脂组合物内溴原子和锑化合物的含量分别不大于0.05wt%。这意味着由于经济原因,不添加溴原子和锑原子,除了包含在起始材料内或者在环氧树脂组合物的制备过程中掺入的痕量组分以外。
优选事先充分混合在本发明中使用的无机填料。此外,视需要,可事先用偶联剂、环氧树脂或酚醛树脂涂布无机填料。可通过使用溶剂混合它们,然后除去溶剂的方法,直接添加偶联剂、环氧树脂或酚醛树脂到无机填料中并通过混合机混合它们的方法,和其它方法,从而进行涂布。
没有特别限制在本发明中使用的固化促进剂,只要它们促进环氧基和酚羟基之间的反应即可。促进剂的实例是二氮杂环烯烃如1,8-二氮杂双环(5,4,0)十一烯-7及其衍生物,胺化合物如三丁胺和苄基二甲胺,咪唑化合物如2-甲基咪唑,有机膦如三苯基膦和甲基二苯基膦,和四取代的·四取代的硼酸盐如四苯基·四苯基硼酸盐,四苯基·四苯甲酸硼酸盐,四苯基·四萘甲酸硼酸盐,四苯基·四萘酰氧基硼酸盐,和四苯基·四萘氧基硼酸盐。这些可各自单独地或结合两种或多种使用。
本发明中式(3)表示的硅烷偶联剂是重要的。式(3)表示的硅烷偶联剂可各自单独地或结合两种或多种使用。没有特别限制硅烷偶联剂的含量,但在全部环氧树脂组合物内,优选0.01-3wt%,更优选0.05-1wt%。若该含量低于下限,则不可能获得充足的流动性,和若它超过上限,则固化性易于劣化。
R1-NH-R2-Si(OR3)nR4 3-n (3)
本发明中式(4)表示的硅烷偶联剂是重要的。式(4)表示的硅烷偶联剂可各自单独地或结合两种或多种使用。没有特别限制硅烷偶联剂的含量,但在全部环氧树脂组合物内,优选0.01-3wt%,更优选0.05-1wt%。若该含量低于下限,则不可能获得充足的流动性,和若它超过上限,则固化性易于劣化。
HS-R5-Si(OR6)nR7 3-n (4)
重要的是,在本发明中结合使用式(3)表示的硅烷偶联剂和式(4)表示的硅烷偶联剂。当仅仅添加它们之一时,流动性和抗焊接开裂性不足。
视需要,可向本发明的环氧树脂组合物中任选地添加偶联剂,例如式(3)表示的那些以外的硅烷偶联剂,如氨基硅烷,和式(4)表示的那些以外的硅烷偶联剂,如巯基硅烷,环氧基硅烷,烷基硅烷,脲基硅烷,和乙烯基硅烷,钛酸酯偶联剂,铝偶联剂,铝/锆偶联剂,着色剂如炭黑,剥离剂如天然蜡和合成蜡,低应力添加剂如橡胶和其它试剂。
可通过使用混合机或类似物,充分地均匀混合起始物质,然后通过热辊、捏合机等熔融捏合该混合物,冷却捏合的混合物,然后粉碎该混合物,从而获得本发明的环氧树脂组合物。
为了使用本发明的环氧树脂组合物通过封装各种电子部件如半导体元件来生产半导体器件,可使用已知的模塑方法,例如压铸、压塑和注塑进行固化和模塑。
通过下述实施例解释本发明,这些实施例无论如何不应当解释为限制本发明。混合比以重量份计。
以下示出了在实施例和对比例中使用的偶联剂和化合物。
偶联剂1:下式(7)表示的偶联剂(KBM-573,由Shin-EtsuChemical Co.,Ltd.制造)
偶联剂2:下式(8)表示的偶联剂(X12-806,由Shin-EtsuChemical Co.,Ltd.制造)
CH3(CH2)3-NH-(CH2)3-Si(OCH3)3 (8)
偶联剂3:下式(9)表示的偶联剂(KBM-803,由Shin-EtsuChemical Co.,Ltd.制造)
HS-(CH2)3-Si(OCH3)3 (9)
偶联剂4:下式(10)表示的偶联剂(KBM-403,由Shin-EtsuChemical Co.,Ltd.制造)
实施例1
环氧树脂1:下式(5)表示的环氧树脂(NC3000P,由Nippon KayakuCo.,Ltd.制造且软化点为58℃和环氧当量为273,下文称为“E-1”)
---------49重量份
(E-1)
酚醛树脂1:下式(6)表示的酚醛树脂(MEH-7851SS,由Meiwa KaseiCo.,Ltd.制造且软化点为107℃和羟基当量为204,下文称为“H-1”)
---------42重量份
(H-1)
1,8-二氮杂双环(5,4,0)十一烯-7(下文称为“DBU”)
---------5重量份
煅制球形氧化硅(平均粒径21微米)
---------870重量份
偶联剂1 ---------3重量份
偶联剂2 ---------3重量份
炭黑 ---------3重量份
巴西棕榈蜡 ---------5重量份
通过混合机混合上述组分,并使用热辊,在95℃下捏合该混合物8分钟,然后粉碎,获得环氧树脂组合物。通过下述方法评价所得环氧树脂组合物。表1示出了结果。
评价方法
螺线流动(cm):这使用螺线流动测量模具(根据EMMI-1-66),在175℃的模具温度下,在6.9MPa的压力下经120秒的固化时间来测量。
粘合力(N/mm2):使用压塑机,在175℃的模具温度下,在9.8MPa的压力和120秒的固化时间的条件下,在2mm×2mm×2mm的引线框架上形成粘合强度试验用样品。作为引线框架,使用两类引线框架:用银镀敷的铜框架(框架1)和用金镀敷的NiPd焊接框架(引线2)。之后,使用自动剪切强度测量装置(由DAGE Co.,Ltd.制造的PC2400),测量环氧树脂的固化产物和框架的剪切强度。
抗焊接开裂性:使用低压压塑机,在175℃的模塑温度下,在8.3MPa的压力下经120秒的固化时间,模塑80pQFP(用金镀敷的合金框架,芯片尺寸:6.0mm×6.0mm),通过在175℃下热处理8小时后烘烤,然后在85℃和85%的相对湿度下进行120小时保湿处理,然后在260℃下进行IR软熔处理。通过超声缺陷检测仪检查在封装件内出现的脱层和裂纹。通过在10个封装件中缺陷封装件的数量表示抗焊接开裂性。
阻燃性:使用压塑机,在175℃的模塑温度下,在9.8MPa的压力下经120秒的固化时间,生产长度127mm、宽度12.7mm和厚度1.6mm的模塑产品,通过在175℃下热处理8小时后固化,然后在23℃和50%相对湿度的氛围内使所得模塑产品进行保湿处理48小时,并根据UL-94进行阻燃性试验。
实施例2-5和对比例1-5
根据表1所示的配方,以与实施例1相同的方式制备环氧树脂组合物,并以与实施例1相同的方式评价。表1示出了结果。
以下示出了除了在实施例1中使用的那些以外的起始材料。
环氧树脂2:主要由下式(11)表示的环氧树脂组成的环氧树脂(YX-4000,由Japan Epoxy Resin Co.,Ltd.制造且环氧当量为190g/eq和熔点为105℃,下文称为“E-2”)。
(E-2)
酚醛树脂2:下式(12)表示的酚醛树脂(XLC-LL,由MitsuiChemical Co.,Lt d.制造且羟基当量为165g/eq和软化点为79℃,下文称为“H-2“)。
(H-2)
表1
实施例 | 对比例 | |||||||||
1 | 2 | 3 | 4 | 5 | 1 | 2 | 3 | 4 | 5 | |
E-1 | 66 | 76 | 49 | 61 | 65 | 66 | 66 | 66 | ||
E-2 | 51 | 51 | ||||||||
H-1 | 48 | 54 | 36 | 43 | 46 | 49 | 49 | 48 | ||
H-2 | 43 | 43 | ||||||||
DBU | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 |
煅制球形氧化硅 | 870 | 850 | 890 | 870 | 870 | 870 | 870 | 870 | 890 | 890 |
偶联剂1 | 2 | 2 | 12 | 0.5 | 2 | 2 | ||||
偶联剂2 | 5 | |||||||||
偶联剂3 | 1 | 2 | 10 | 0.5 | 5 | 2 | 1 | 1 | 1 | |
偶联剂4 | 2 | 2 | ||||||||
炭黑 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
巴西棕榈蜡 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 |
螺线流动(cm) | 114 | 133 | 100 | 122 | 102 | 101 | 88 | 88 | 98 | 92 |
框架1的粘合(N/mma2) | 3.7 | 3.9 | 3.7 | 3.4 | 3.5 | 2.6 | 3.0 | 2.7 | 2.7 | 2.5 |
框架2的粘合(N/mm2) | 3.4 | 3.4 | 3.5 | 3.1 | 3.1 | 2.3 | 2.6 | 2.4 | 2.5 | 2.2 |
抗焊接开裂性(在10个封装件内缺陷封装件的数量) | 0 | 0 | 0 | 0 | 0 | 5 | 6 | 5 | 2 | 4 |
阻燃性 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 | V-1 | V-1 |
实施例1和对比例1与2的比较表明,通过结合使用偶联剂1和2,而不是单独使用它们中的每一种,流动性和粘合力均得到改进。当如对比例3一样,结合使用偶联剂3和4时,显示不出效果,此外当如对比例4一样使用其它树脂时也显示不出效果。因此,该效果是本发明独有的。
工业实用性
根据本发明,获得环氧树脂组合物,在没有使用含溴有机化合物和锑化合物的情况下,所述环氧树脂组合物可提供满意的阻燃性,此外具有良好的流动性和对基底的粘合性。使用该环氧树脂组合物制备的半导体器件的抗焊接开裂性优异。
Claims (2)
1.一种用于封装半导体的环氧树脂组合物,它包括(A)下式(1)表示的环氧树脂,(B)下式(2)表示的酚醛树脂,(C)固化促进剂,(D)无机填料,(E)下式(3)表示的硅烷偶联剂,和(F)下式(4)表示的硅烷偶联剂作为基本组分:
其中R1和R2各自表示氢原子或1-4个碳原子的烷基,和可以相同或不同,a是0-3的一个整数,b是0-4的一个整数,和n是平均值,为1-5的一个正数,
其中R1和R2各自表示氢原子或1-4个碳原子的烷基,和可以相同或不同,a是0-3的一个整数,b是0-4的一个整数,和n是平均值,为1-5的一个正数;
R1-NH-R2-Si(OR3)nR4 3-n (3)
其中R1表示1-12个碳原子的有机基团,R2、R3和R4各自表示1-12个碳原子的烃基,和n是1-3的一个整数;和
HS-R5-Si(OR6)nR7 3-n (4)
其中R5表示1-12个碳原子的有机基团,R6和R7各自表示1-12个碳原子的烃基,和n是1-3的一个整数,
其中组分(A)的含量不小于30wt%,以环氧树脂的总重计。
其中组分(B)的含量不小于30wt%,以酚醛树脂的总重计。
其中组分(E)的含量为0.01-3wt%,以树脂组合物的总重计。
其中组分(F)的含量为0.01-3wt%,以树脂组合物的总重计。
其中组分(D)的含量为84-94wt%,以树脂组合物的总重计。
2.一种通过使用权利要求1的用于封装半导体的环氧树脂组合物封装半导体元件而获得的半导体器件。
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KR100834351B1 (ko) * | 2006-11-24 | 2008-06-02 | 제일모직주식회사 | 멀티칩 패키지 밀봉용 에폭시 수지 조성물 및 이를이용한 멀티칩 패키지 |
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