CN1307275C - 钨抛光溶液 - Google Patents
钨抛光溶液 Download PDFInfo
- Publication number
- CN1307275C CN1307275C CNB038026953A CN03802695A CN1307275C CN 1307275 C CN1307275 C CN 1307275C CN B038026953 A CNB038026953 A CN B038026953A CN 03802695 A CN03802695 A CN 03802695A CN 1307275 C CN1307275 C CN 1307275C
- Authority
- CN
- China
- Prior art keywords
- tungsten
- solution
- weight percent
- secondary oxidizer
- tungsten cmp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 72
- 239000010937 tungsten Substances 0.000 title claims abstract description 72
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 238000005498 polishing Methods 0.000 title claims description 47
- 239000007800 oxidant agent Substances 0.000 claims abstract description 36
- 230000003068 static effect Effects 0.000 claims abstract description 31
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Chemical group [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 230000001590 oxidative effect Effects 0.000 claims abstract description 11
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910001930 tungsten oxide Inorganic materials 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims abstract 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 16
- 239000006061 abrasive grain Substances 0.000 claims description 16
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 14
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical group OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims description 13
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 5
- 229910002651 NO3 Inorganic materials 0.000 claims description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 4
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 4
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims description 4
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 3
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract description 9
- 238000007254 oxidation reaction Methods 0.000 abstract description 9
- 239000002245 particle Substances 0.000 abstract description 8
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical class [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 24
- 238000005260 corrosion Methods 0.000 description 18
- 230000007797 corrosion Effects 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 description 6
- 230000005764 inhibitory process Effects 0.000 description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 229910052740 iodine Inorganic materials 0.000 description 4
- 239000011630 iodine Substances 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 description 3
- 239000004153 Potassium bromate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 229940094037 potassium bromate Drugs 0.000 description 3
- 235000019396 potassium bromate Nutrition 0.000 description 3
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 3
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 3
- 239000001230 potassium iodate Substances 0.000 description 3
- 235000006666 potassium iodate Nutrition 0.000 description 3
- 229940093930 potassium iodate Drugs 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 2
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- -1 vitriol Chemical compound 0.000 description 2
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 1
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- YCPXWRQRBFJBPZ-UHFFFAOYSA-N 5-sulfosalicylic acid Chemical compound OC(=O)C1=CC(S(O)(=O)=O)=CC=C1O YCPXWRQRBFJBPZ-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- 241000283984 Rodentia Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 159000000013 aluminium salts Chemical class 0.000 description 1
- 229910000329 aluminium sulfate Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052728 basic metal Inorganic materials 0.000 description 1
- 150000003818 basic metals Chemical class 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 229910052811 halogen oxide Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- YZQBYALVHAANGI-UHFFFAOYSA-N magnesium;dihypochlorite Chemical compound [Mg+2].Cl[O-].Cl[O-] YZQBYALVHAANGI-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000000276 potassium ferrocyanide Substances 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- GTSHREYGKSITGK-UHFFFAOYSA-N sodium ferrocyanide Chemical compound [Na+].[Na+].[Na+].[Na+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] GTSHREYGKSITGK-UHFFFAOYSA-N 0.000 description 1
- 239000000264 sodium ferrocyanide Substances 0.000 description 1
- 235000012247 sodium ferrocyanide Nutrition 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 229940001516 sodium nitrate Drugs 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOGGUFAVLNCTRS-UHFFFAOYSA-N tetrapotassium;iron(2+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] XOGGUFAVLNCTRS-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
Abstract
用于平面化半导体晶片的钨CMP溶液，该溶液包含具有足够的氧化电位用于将钨金属氧化成氧化钨的主要氧化剂；且该钨CMP溶液具有用于除去钨金属的静态腐蚀速率。辅助氧化剂可降低钨CMP溶液的静态腐蚀速率。该辅助氧化剂选自溴酸盐和氯酸盐。可选地，该钨CMP溶液包含0至50重量百分比的研磨颗粒；且该溶液还包含余量的水和偶然杂质。
Description
发明背景
本发明涉及钨化学机械抛光且特别是具有受控的静态腐蚀速率的钨CMP溶液。钨CMP浆料是依靠钨的腐蚀和机械研磨来平面化钨的表面。在钨CMP期间发生竞争化学反应。这些反应中第一种是氧化反应。在氧化期间，氧化剂与基底表面作用形成氧化钨。第二种反应是配位反应。在这种反应中，配位试剂主动溶解由氧化反应生长在基底上的氧化物薄膜。
由于钨的高稳定性，钨浆料必须典型地依靠强氧化剂。鉴于这一点，已经使用或计划使用强氧化剂如卤素的氧化物作为用于钨抛光浆料的氧化剂。例如，Streinz等人在美国专利5,993,686中公开了氧化性金属盐，氧化性金属配位物，非金属氧化性酸如过乙酸和高碘酸，铁盐如硝酸盐，硫酸盐，EDTA，柠檬酸盐，氰铁酸钾，过氧化氢，重铬酸钾，碘酸钾，溴酸钾，三氧化钒等，过氧化物的铝盐，钠盐，钾盐，铵盐，季铵盐，盐，或其它阳离子，氯酸盐，高氯酸盐，硝酸盐，高锰酸盐，过硫酸盐和它们的混合物。类似地，Mravic等人在WO 99/67056中公开了过氧化氢，氰铁酸钾，重铬酸钾，碘酸钾，溴酸钾，三氧化钒，次氯酸，次氯酸钠，次氯酸钾，次氯酸钙，次氯酸镁，硝酸铁和它们的混合物的使用。这些氧化剂如卤素氧化物可与基底表面化学反应形成金属氧化物。然后在CMP过程中利用浆料研磨剂从基底表面上除去被抑制的氧化钨。在这个方法中，CMP过程从基底上除去物质并平面化其表面。
在钨CMP中所使用的含碘酸盐浆料能够抑制静态腐蚀过程。遗憾的是，虽然碘酸盐基浆料能够成功的抑制静态腐蚀，它们同时具有下列不需要的性质：1)需要用侵蚀性的氧化铝颗粒来除去氧化钨，这可能产生划痕；2)需要合适的设备根据已确立环境法规来除去碘；和3)浆料与抛光设备的接触导致该设备变成不期望的褐黄色。
在美国专利5,958,288中，Mueller等人认为当铁的存在数量小于3000ppm时，含铁氧化剂如硝酸铁可起作催化剂促进钨的除去。这些浆料的问题是钨的静态腐蚀是普遍的副作用。CMP过程之后，残存在基底表面上的金属抛光浆料会继续腐蚀该基底。有时，静态腐蚀对一些半导体集成电路产生有益的结果。但在大多数情形中，最大程度上减小静态腐蚀可提高半导体的性能。另外，静态腐蚀还可能造成表面缺陷如点蚀和穿透(key-holing)。这些表面缺陷严重影响半导体器件的最终性能并妨碍其效用。
Grumbine等人在美国专利6,083,419中公开了使用含氮的氧化剂来控制静态腐蚀。遗憾的是，据发明者所知，这些化合物对静态腐蚀速率的影响有限。目前对同时具有快的钨去除速率和有限的静态腐蚀的钨抛光浆料存在持续的需求。另外，存在对可同时消除划痕，并消除与含碘浆料联系的环境和装饰性(cosmetic)问题的抛光浆料的需求。
发明描述
本发明提供了用于平面化半导体晶片的钨CMP溶液，该溶液包含：具有足够的氧化电位用于将钨金属氧化成氧化钨的主要氧化剂，且该钨CMP溶液具有用于除去钨金属的静态腐蚀速率；可降低该钨CMP溶液的静态腐蚀速率的辅助氧化剂，该辅助氧化剂选自溴酸盐和氯酸盐；0至50重量百分比的研磨颗粒；余量的水和偶然杂质。
可选地，本发明提供了用于平面化半导体晶片的钨CMP溶液，该溶液包含：具有足够的氧化电位用于将钨金属氧化成氧化钨的含铁的主要氧化剂，且该钨CMP溶液具有用于除去钨金属的静态腐蚀速率；用于抛光方法且用于降低该钨CMP溶液的静态腐蚀速率的辅助氧化剂，该辅助氧化剂选自溴酸盐，氯酸盐和碘酸盐；0至50重量百分比的研磨颗粒；余量的水和偶然杂质。
发明详述
已经发现辅助氧化剂例如溴酸盐，氯酸盐和碘酸盐会反应形成覆盖钨的薄膜并形成对钨抛光溶液和浆料的有效抑制物。对本说明书来说，抛光溶液是指可以包含或不包含研磨剂的水性抛光溶液。如果该抛光溶液包含研磨剂，这时该抛光溶液也是一种抛光浆料。
该抛光溶液依靠强的主要氧化剂，该氧化剂具有足够的氧化电位用于将钨金属氧化成氧化钨。最优选地，该主要氧化剂选自过氧化氢，氰亚铁酸盐，重铬酸盐，三氧化钒，次氯酸，次氯酸盐，硝酸盐，过硫酸盐，高锰酸盐，氢氧化物和它们的组合。其它具体的实例包括，氰亚铁酸钾，氰亚铁酸钠，重铬酸钾，重铬酸钠，次氯酸钙，次氯酸钾，次氯酸钠，硝酸钾，硝酸钠，高锰酸钾，高锰酸钠和它们的组合。通常，这些主要氧化剂的混合物可以进一步提高去除速率。该抛光溶液典型包含总量为0.1至12重量百分比的主要氧化剂——对本说明书来说，所有的浓度均以重量百分比表示除非另外明确说明。当向抛光溶液中添加不稳定的主要氧化剂如过氧化氢时，通常必须在使用时或快要使用时添加这些氧化剂。优选地，该抛光溶液典型包含总量为0.5至10重量百分比的主要氧化剂。更优选地，该抛光溶液典型包含总量为1至7.5重量百分比的主要氧化剂。
优选地，该主要氧化剂包含过氧化氢或含铁的氧化剂。更优选地，该主要氧化剂是含铁的氧化剂。甚至当以小的浓度存在的时候，含铁的氧化剂也可以提供显著的钨去除速率。优选地，添加0.0005至10重量百分比的硝酸铁可提高钨的去除速率。更优选地，该浆料包含0.001至8重量百分比的硝酸铁。此外，形成的抑制物薄膜甚至对含2至7.5重量百分比硝酸铁的抛光溶液有效。
辅助氧化剂与钨结合从而形成静态腐蚀抑制薄膜。该抑制化合物形成能阻止基底表面上的金属氧化物溶解的表面膜。该阻挡物对用来平面化钨所需的侵蚀最强的氧化剂有效。除形成该阻挡物薄膜以外，该辅助氧化剂还具有足够的氧化电位以将钨氧化。然而该辅助氧化剂典型地只构成全部钨氧化的较小百分比。但是例如使用一些含高浓度硝酸铁的组成，该较高的辅助氧化剂浓度可构成钨氧化的大部分。
对于大多数主要氧化剂，该辅助氧化剂是溴酸盐(BrO3 -)，氯酸盐(ClO3 -)或它们的混合物。但是对于具有含铁的主要氧化剂的溶液，该辅助氧化剂可以是溴酸盐，氯酸盐，碘酸盐或它们的混合物。遗憾的是，含碘酸盐的浆料通常具有环境处理昂贵以及装饰退色的缺点。然而，在与硝酸铁溶液联系的高浓度黑-红-橙色的情形中，这不是问题。优选地，固态粉末化合物提供了向抛光溶液或浆料中添加溴酸盐，氯酸盐，碘酸盐的有效方法。这些化合物的具体实例包括碱金属例如铵，钾，钠，碱土金属例如镁或其它的盐。碱卤化合物易于从市场上购得，或者也可以合成得到。优选地，该固态粉末化合物是溴酸钾(KBrO3)，氯酸钾(KClO3)，碘酸钾(KIO3)或它们的混合物。鉴于环境考虑，相比钠或碱土金属，优选使用这些钾的化合物。另外，可以按元素组分或以其它化合物的形式将氯，溴或碘加入该抛光溶液。然后强的主要氧化剂以快的反应动力学将这些辅助氧化剂分别氧化成溴酸盐，氯酸盐或碘酸盐——因为该主要氧化剂的氧化电位不足以将氟氧化，所以这些反应动力学不能用于氟。在钨的氧化期间，高氯酸盐，高溴酸盐和高碘酸盐以同样的方式分别形成氯酸盐，溴酸盐和碘酸盐。
优选地，该抛光溶液具有小于400埃/分钟的静态腐蚀去除速率和至少3000埃/分钟的去除速率。最优选地，该抛光溶液具有小于200埃/分钟的静态腐蚀去除速率和至少4000埃/分钟的去除速率。需要用来控制静态腐蚀的辅助氧化剂的数量取决于抛光溶液的类型和具体的辅助氧化剂。在大多数情形中，金属抛光溶液中的辅助氧化剂的浓度不超过其最大溶解度。在一些情形中，超过这个浓度可能在该抛光溶液中留下辅助氧化剂的固态不溶颗粒。该辅助氧化剂的不溶颗粒会干扰抛光溶液的抛光和腐蚀性能。
该辅助氧化剂浓度的范围可以是从少量但有效的浓度直至在特定的抛光溶液中的溶解度极限。该辅助氧化剂的溶解度极限取决于抛光溶液的化学性质。该溶解度极限的范围可以是该抛光溶液1.8％重量比至22％重量比的浓度。优选地，该辅助氧化剂的浓度范围是0.0001％重量比至7.5％重量比。更优选地，该辅助氧化剂的范围是0.001％重量比至5％重量比。当该抛光溶液包含相对较大量的硝酸铁(2至7.5％重量比)时，该抛光溶液优选包含0.1至5％重量比的辅助氧化剂。
可选地，该抛光溶液包含0至50重量百分比的研磨颗粒。优选地，该抛光溶液包含0至30重量百分比的研磨颗粒。更优选地，该抛光溶液包含0至25重量百分比的研磨颗粒。当存在时，该研磨颗粒能机械的去除氧化钨层。可接受的研磨颗粒的实例包括下列：氧化铝，氧化铈，金刚石，氧化铁，氧化硅，碳化硅，氮化硅，氧化钛或它们的组合。优选地，该研磨颗粒是氧化铝或氧化硅。更优选地，该研磨颗粒是氧化硅。另外，该研磨颗粒优选具有小于250nm的平均颗粒尺寸。更优选地，该平均颗粒尺寸小于150nm。
如果该抛光溶液不含研磨颗粒，这时可以有利的使用固定式研磨垫。更优选地，不合研磨剂的溶液可简单地使用聚合物垫，并与侵蚀性更强的主要氧化剂结合使用。
另外，该抛光溶液可选包含用于辅助去除钨的配位剂。如果存在，该配位剂典型为能从基底上去除氧化钨层的羧酸。例如，可接受的配位剂包括如下：丙二酸，乳酸，磺基水杨酸(“SSA”)，甲酸，乙酸，丙酸，丁酸，戊酸，己酸，庚酸，辛酸，壬酸，和它们的混合物。典型的抛光溶液可以包含0至15重量百分比的配位剂。更优选地，该抛光溶液包含0.5至5重量百分比的配位剂。对于某些情形，例如不含过氧化氢的抛光溶液，该配位剂可以是不必要的。
该水性抛光溶液包含余量的水和偶然杂质。更优选地，该水是去离子水。此外，该水性抛光溶液可以在酸性或碱性pH下起作用。优选地，该抛光溶液在酸性pH下起作用。更优选地，该抛光溶液在小于6的pH下起作用。在将辅助氧化剂混入抛光溶液后，通过常规方法测量该溶液的pH；而且可以通过添加碱例如氢氧化铵，或无机酸例如硝酸来调节其pH。当与硝酸铁结合使用时，硝酸可进一步促进去除速率。
实施例
将氯酸钾以不同的重量百分比加入钨抛光浆料。表I给出了该钨抛光浆料的组成。
表I
| 一般浆料组成 | |
| 水中 | |
| 过氧化氢 | 4％重量比 |
| 硝酸铁 | 0.01％重量比 |
| 丙二酸 | 0.07％重量比 |
| 乳酸 | 1.5％重量比 |
| SSA | 0.01％重量比 |
用氢氧化铵将所得的浆料的pH调节至约3。然后使用所得的浆料通过CMP来腐蚀和抛光标准的钨基底。随时间测量基底厚度。绘出厚度随腐蚀时间变化的曲线图，并测量该曲线的斜率以确定腐蚀速率。该静态腐蚀速率的数据如下表II所示。
表II
| 钨的腐蚀速率 | |
| pH＝3的金属抛光浆料 | |
| 氯酸钾腐蚀抑制剂 | |
| KClO3％重量比 | 静态腐蚀速率(埃/分钟) |
| 0 | 340 |
| 0.01 | 200 |
| 0.1 | 126 |
| 1 | 70 |
表II中的数据显示0.01％的氯酸钾浆料溶液可显著减少钨的静态腐蚀去除速率。此外，增加氯酸钾可进一步提高该溶液的静态腐蚀抑制能力——用来达到200埃/分钟的静态腐蚀速率所需的氯酸钾的精确数量取决于具体的浆料。例如，相比更碱性的浆料溶液，使用KClO3的特别酸性浆料溶液可能需要不同浓度的辅助抑制剂来将静态腐蚀速率降至200埃/分钟以下。
添加选自溴酸盐，氯酸盐和碘酸盐的辅助氧化剂提供了既具有快的钨去除速率又具有有限的静态腐蚀的钨抛光溶液。另外，该抛光溶液可消除与常规的含碘浆料相关的划痕。最后，对于含溴酸盐，氯酸盐或它们的混合物的抛光溶液，该抛光溶液可消除与碘酸盐相关的环境问题和装饰性问题。
Claims (10)
1.用于平面化半导体晶片的钨CMP溶液，该溶液包含：
选自过氧化氢、氰亚铁酸盐、重铬酸盐、三氧化钒、次氯酸、次氯酸盐、硝酸盐、过硫酸盐、高锰酸盐、氢氧化物和它们的混合物的主要氧化剂，该主要氧化剂具有足够的氧化电位用于将钨金属氧化成氧化钨，且该钨CMP溶液具有用于除去钨金属的静态腐蚀速率；
用于将钨CMP溶液的钨静态腐蚀速率降至200埃/分钟以下的辅助氧化剂，该辅助氧化剂选自溴酸盐，氯酸盐和它们的混合物；
0至50重量百分比的研磨颗粒；和
余量的水和偶然杂质，
其中该溶液含有0.1至12重量百分比的全部主要氧化剂，0.0001至7.5重量百分比的辅助氧化剂。
2.权利要求1的钨CMP溶液，该溶液含有0.0005至10重量百分比的硝酸铁和0至30重量百分比的研磨颗粒。
3.用于平面化半导体晶片的钨CMP溶液，该溶液包含：
具有足够的氧化电位用于将钨金属氧化成氧化钨的含铁的主要氧化剂，且该钨CMP溶液具有用于除去钨金属的静态腐蚀速率；
用于抛光方法且用于将该钨CMP溶液的钨静态腐蚀速率降至200埃/分钟以下的辅助氧化剂，该辅助氧化剂选自溴酸盐、氯酸盐、碘酸盐和它们的混合物；
0至50重量百分比的研磨颗粒；和
余量的水和偶然杂质，
其中该溶液含有0.1至12重量百分比的全部主要氧化剂，0.0001至7.5重量百分比的辅助氧化剂。
4.权利要求3的钨CMP溶液，其中该辅助氧化剂选自溴酸盐和氯酸盐。
5.权利要求4的钨CMP溶液，其中该主要氧化剂包含硝酸铁。
6.权利要求4的钨CMP溶液，该溶液含有0.0005至10重量百分比的硝酸铁和0至30重量百分比的研磨颗粒。
7.权利要求4的钨CMP溶液，该溶液含有0.5至10重量百分比的全部主要氧化剂，0.001至8重量百分比的硝酸铁，0.001至5重量百分比的辅助氧化剂和0至25重量百分比的研磨颗粒且具有小于6的pH。
8.权利要求7的钨CMP溶液，该溶液包含硝酸和0至15的配位剂。
9.权利要求8的钨CMP溶液，该溶液含有1至7.5重量百分比的全部主要氧化剂，2至7.5重量百分比的硝酸铁和0.1至5重量百分比的辅助氧化剂。
10.抛光半导体晶片的方法，该方法包括使用权利要求1的钨CMP溶液对晶片进行平面化的步骤。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/056,342 US20030139047A1 (en) | 2002-01-24 | 2002-01-24 | Metal polishing slurry having a static etch inhibitor and method of formulation |
| US10/056,342 | 2002-01-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1622985A CN1622985A (zh) | 2005-06-01 |
| CN1307275C true CN1307275C (zh) | 2007-03-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB038026953A Expired - Lifetime CN1307275C (zh) | 2002-01-24 | 2003-01-24 | 钨抛光溶液 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20030139047A1 (zh) |
| EP (1) | EP1468057A1 (zh) |
| JP (1) | JP2005516384A (zh) |
| KR (1) | KR20040086290A (zh) |
| CN (1) | CN1307275C (zh) |
| WO (1) | WO2003062337A1 (zh) |
Cited By (1)
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| WO2012055153A1 (zh) * | 2010-10-29 | 2012-05-03 | 安集微电子（上海）有限公司 | 一种钨化学机械抛光方法 |
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| KR101072271B1 (ko) * | 2005-03-14 | 2011-10-11 | 주식회사 동진쎄미켐 | 화학 기계적 연마 슬러리 조성물용 산화제 및 그 제조방법 |
| US8551202B2 (en) * | 2006-03-23 | 2013-10-08 | Cabot Microelectronics Corporation | Iodate-containing chemical-mechanical polishing compositions and methods |
| JP5017709B2 (ja) * | 2006-09-07 | 2012-09-05 | ジルトロニック アクチエンゲゼルシャフト | シリコンウェーハのエッチング方法および半導体シリコンウェーハの製造方法 |
| CN101197268B (zh) * | 2006-12-05 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨后残留物的去除方法 |
| WO2009017734A1 (en) * | 2007-07-31 | 2009-02-05 | Aspt, Inc. | Slurry containing multi-oxidizer and nano-sized diamond abrasive for tungsten cmp |
| CN101649162A (zh) * | 2008-08-15 | 2010-02-17 | 安集微电子（上海）有限公司 | 一种用于化学机械研磨的抛光液 |
| KR101396232B1 (ko) * | 2010-02-05 | 2014-05-19 | 한양대학교 산학협력단 | 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법 |
| WO2011097954A1 (zh) * | 2010-02-11 | 2011-08-18 | 安集微电子（上海）有限公司 | 一种用于钨化学机械抛光方法 |
| DE102010028457A1 (de) * | 2010-04-30 | 2011-11-03 | Areva Np Gmbh | Verfahren zur Oberflächen-Dekontamination |
| WO2013024971A2 (ko) * | 2011-08-16 | 2013-02-21 | (주)유비프리시젼 | 텅스텐 연마용 ｃｍｐ 슬러리 조성물 |
| KR101335946B1 (ko) * | 2011-08-16 | 2013-12-04 | 유비머트리얼즈주식회사 | 텅스텐 연마용 ｃｍｐ 슬러리 조성물 |
| JP6329909B2 (ja) * | 2011-12-28 | 2018-05-23 | インテグリス・インコーポレーテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
| US9303191B2 (en) | 2012-03-30 | 2016-04-05 | Nitta Haas Incorporated | Polishing composition |
| KR101257336B1 (ko) * | 2012-04-13 | 2013-04-23 | 유비머트리얼즈주식회사 | 연마용 슬러리 및 이를 이용한 기판 연마 방법 |
| US20140273458A1 (en) * | 2013-03-12 | 2014-09-18 | Air Products And Chemicals, Inc. | Chemical Mechanical Planarization for Tungsten-Containing Substrates |
| KR101833219B1 (ko) * | 2016-08-05 | 2018-04-13 | 주식회사 케이씨텍 | 텅스텐 베리어층 연마용 슬러리 조성물 |
| WO2018058347A1 (en) * | 2016-09-28 | 2018-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds |
| WO2018058396A1 (en) * | 2016-09-29 | 2018-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| KR20190057330A (ko) * | 2016-09-29 | 2019-05-28 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | 텅스텐의 화학 기계적 연마 방법 |
| US10633557B2 (en) * | 2016-09-29 | 2020-04-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| US9984895B1 (en) * | 2017-01-31 | 2018-05-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| US10286518B2 (en) * | 2017-01-31 | 2019-05-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| JPWO2022114036A1 (zh) * | 2020-11-26 | 2022-06-02 |
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- 2003-01-24 CN CNB038026953A patent/CN1307275C/zh not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| US20030139047A1 (en) | 2003-07-24 |
| JP2005516384A (ja) | 2005-06-02 |
| WO2003062337A1 (en) | 2003-07-31 |
| EP1468057A1 (en) | 2004-10-20 |
| CN1622985A (zh) | 2005-06-01 |
| KR20040086290A (ko) | 2004-10-08 |
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