CN1294754A - 处理绝缘层的方法 - Google Patents
处理绝缘层的方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 229920000642 polymer Polymers 0.000 title 1
- 238000005530 etching Methods 0.000 claims abstract description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 25
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004157 plasmatron Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 238000003379 elimination reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
本发明涉及一种加热例如半导体器件中的绝缘层的方法,其中透过一层抗蚀剂蚀刻形成物,包括反应蚀刻抗蚀剂,防止吸收或除去蚀刻形成物的裸露表面上的水蒸气和/或氧气,在没有上述水蒸气和/或氧气的情况下用导电金属填充形成物。
Description
本发明涉及一种处理例如使用在半导体器件中的绝缘层的方法。
当半导体设计者将半导体内的器件越来越紧凑地安装在一起时,在连接金属线路之间形成的绝缘层的介电常数就变得更加重要。因此生产出介电常数(k)越来越低的绝缘材料就成为今后发展的趋势。一种制成这种材料的方法是将碳添加进绝缘材料中,我们正在进行的国际专利申请PCT/GB97/02240对这种方法进行了描述。本文将对该发明中的公开内容作概括说明。
为了形成被绝缘层分割开的金属线路,或者将这些线路与其他在半导体内形成的线路或器件相连接,其中,上述绝缘层沉积在半导体材料上,必须对绝缘层进行蚀刻或完全蚀刻,随后将导电金属填充进侵蚀后的凹槽中。一般通过将绝缘层的上表面涂上光致抗蚀剂,利用光刻法除去抗蚀剂的特定部分,再浸蚀抗蚀剂中裸露的开口从而形成凹槽,随后利用氧气通过反应蚀刻来除去抗蚀剂层,这样就形成了上述的凹槽。
然而却发现在含碳的绝缘层中,介电常数由于反应氧气蚀刻而提高,形成物中的侧壁被蚀刻会产生凸度,同时当把金属填充进凹槽时,还会产生一系列问题。
一方面,本发明包括一种处理绝缘层的方法,其中透过一层抗蚀剂蚀刻形成物,包括反应蚀刻抗蚀剂(例如利用等离子工艺),防止吸收或除去蚀刻形成物的裸露表面上的水蒸气和/或氧气,在没有上述水蒸气和/或氧气的情况下将导电金属填充进形成物中。
防止吸收的步骤可以包括给氢供蚀刻气体(如氧气)或给蚀刻气体供氢,并且或者可以包括给氮供蚀刻气体或给蚀刻气体供氮。更好的防止步骤包括给蚀刻气体供一种气体或给该气体供蚀刻气体,该气体是反应氢和/或氮的来源,在实施例中,该气体可以是NH3,蚀刻气体为氧气,氧气与该气体的比例大约为3∶1,在其它蚀刻气体的情况下,相似的比例同样合适。
在一个可替换的布置中,防止步骤可以这样实现:通过在真空环境下维持基底直至完成金属喷镀或者还可以增加一包括在金属喷镀之前加热绝缘层以排出绝缘层材料中的气体的去除步骤。
优选地,绝缘层的介电常数小于4并且/或者绝缘层包含碳。更具体地,介电常数小于3.5,最好小于3.0。
介质层中的碳浓度最好大于10%。
本发明尽管已由上文所限,但它仍应理解为包括上述或以下描述的步骤的任何创造性组合。
本发明可以用许多方式来实现,以下参照附图,结合实施例对本发明进行描述,附图中:
图1为使用本发明方法的装置的垂直截面图;
图2为一个具有若干个使用已有技术填充的凹槽的绝缘层的视图;
图3为图2中这些凹槽的放大图;
图4为利用本发明方法填充的凹槽的视图;
图5为单个凹槽的放大图。
如图1所示,真空室10包括一支撑薄膜的薄膜基底11,薄膜正对着等离子源12,反应气体通过气体进口13能从等离子源流出来。加热灯14用于加热薄膜16,室内可以通过高压真空阀15抽成真空。等离子区是由等离子管中的薄膜通过一高频线圈17远程产生的。
为了蚀刻绝缘层,薄膜16安装在基底11上,在已有技术中,氧气通过等离子管12流入室内,在薄膜16上通过反应蚀刻光致抗蚀剂,这一点前文已经进行了描述。
接下来的实验是这样进行的:
为了除去光致抗蚀剂和剥去抗反射涂层材料,在开始进行上述方法时仅使用氧气,随后使用一包括氨的混合气体。
适用于下列条件:
仅使用氧气的过程(传统去除抗蚀剂)
150mm薄膜,使用1千瓦的灯
步骤l | 步骤2 | |
气体流量 | 496sccm氧气 | 496sccm氧气 |
压力 | 750mT | 750mT |
等离子强度 | 500W ICP | 500W ICP |
灯式加热器 | 80%灯的强度 | 45%灯的强度 |
进行时间 | 60 sec’s | 120 sec’s |
包含氨的过程(本发明实施例)
150mm薄膜,使用1千瓦的灯
(ICP:电感耦合等离子体)
基底的实际温度并未测量,但估计在250摄氏度左右。
随后为了用绝缘层/接触层和铝给凹槽喷镀,进行如下过程:
预热:1.5千瓦,5分钟
(Forcefill是我们的欧洲专利申请No.92304633.8和美国专利5527861中描述的金属喷镀过程的注册商标。)
使用上述金属喷镀方法,在用氨去除抗蚀剂过程中100%的凹槽被填满,而在仅有氧气去除抗蚀剂过程中70%的凹槽被填满。同样可获知在绝缘层/接触层后使用的商业用钨填入物会因为当绝缘层含有碳时被填充的凹槽不可靠而遭受损害,同时根据本发明,实施一般的去除抗蚀剂方法无需进一步过程。
图2、图3、图4和图5分别是仅用氧气和使用混合气体的方法下的扫描电子显微照片。在这些扫描电子照片中,亮区代表空隙,由此可看出传统金属喷镀方法很不成功。相反,混合气体方法却提供了很好的金属喷镀效果。
标准的氧气等离子去除抗蚀剂过程为何会产生金属喷镀问题尚未被完全理解,而且为何引入氨会解决这个问题同样未被完全理解。然而,这个问题却为那些意图使低K值的绝缘材料,特别是碳低于10%的绝缘材料整合在一起的人们所熟悉。在氧气反应蚀刻法中除去碳而使形成物的裸露表面易于受到例如有在随后的大气暴露中吸收的水蒸气的侵袭和污染是可能发生的。这种暴露一般是因为光致抗蚀剂去除区和金属喷镀区被制造成独立的单元而发生的。然而,如果这个分析是正确的,可以设想以上见到的好处同样可以通过如下方式获得:进行显著加热,例如在真空下,在金属喷镀前使绝缘层中的气体得以除去,或者在真空环境中,在去除抗蚀剂过程和完成金属喷镀过程之间保留薄膜。预热的方案由于热量预算的原因和低的生产量而无法批量生产。
假设因为氨中的氢通过与游离硅的键相结合而替换了被氧去除的碳,所以将氨引入氧气中可以克服仅用氧气时的方法存在问题。这种氢替换被去除的碳从而稳定了绝缘材料的结构,防止了随后的水蒸汽和吸收。此外或者可替代地,在碳的替换过程中,氮可以替换碳或者在氢和氮之间也许仍有目前未知的相互作用。
此外或者可替代地,氢和/或氮的存在也许会抑制氧气对碳的替换。
尽管这曾经是一个不太具有吸引力的解决方案,但在金属喷镀之前分别进行氢/氮的处理步骤是可行的。
Claims (11)
1.一种处理绝缘层的方法,其特征为在于透过一层抗蚀剂蚀刻形成物,包括反应蚀刻抗蚀剂,防止吸收或除去蚀刻形成物的裸露表面上的水蒸气和/或氧气,在没有上述水蒸气和/或氧气的情况下利用导电金属填充形成物。
2.按照权利要求1所述的方法,其特征在于上述防止的步骤包括给反应蚀刻气体供应氢气或给氢气供应反应蚀刻气体。
3.按照权利要求1或2所述的方法,其特征在于上述防止的步骤包括为反应蚀刻气体供应氮气或给氮气供应反应蚀刻气体。
4.按照权利要求1所述的方法,其特征在于上述防止的步骤包括给反应蚀刻气体供应一作为反应氢和/或氮来源的气体,或者给作为反应氢和/或氮来源的气体供应反应蚀刻气体。
5.按照权利要求4所述的方法,其特征在于上述气体为氨气。
6.按照权利要求4或5所述的方法,其特征在于氧气和上述气体的比例约为3∶1。
7.按照权利要求1所述的方法,其特征在于上述防止的步骤是通过在真空的条件下保持基底直至完成金属喷镀而实现的。
8.按照权利要求1所述的方法,其特征在于上述除去的步骤包括在金属喷镀前加热绝缘层。
9.按照前述任意一权利要求所述的方法,其特征在于上述绝缘层的介电常数小于4。
10.按照前述任意一权利要求所述的方法,其特征在于上述绝缘层含有碳。
11.按照权利要求10所述的方法,其特征在于上述绝缘层含有的碳超过10%。
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GB9904427.3 | 1999-02-26 | ||
GBGB9904427.3A GB9904427D0 (en) | 1999-02-26 | 1999-02-26 | Method treating an insulating layer |
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CN1294754A true CN1294754A (zh) | 2001-05-09 |
CN1178280C CN1178280C (zh) | 2004-12-01 |
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CN (1) | CN1178280C (zh) |
AU (1) | AU2683400A (zh) |
DE (1) | DE10080365T1 (zh) |
GB (2) | GB9904427D0 (zh) |
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CN100521088C (zh) * | 2002-12-23 | 2009-07-29 | 东京毅力科创株式会社 | 双层光刻胶干法显影的方法和装置 |
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GB9904427D0 (en) * | 1999-02-26 | 1999-04-21 | Trikon Holdings Ltd | Method treating an insulating layer |
US6933246B2 (en) * | 2002-06-14 | 2005-08-23 | Trikon Technologies Limited | Dielectric film |
JP4594235B2 (ja) | 2002-12-23 | 2010-12-08 | 東京エレクトロン株式会社 | Arc層をエッチングする方法 |
US7344991B2 (en) | 2002-12-23 | 2008-03-18 | Tokyo Electron Limited | Method and apparatus for multilayer photoresist dry development |
US8048325B2 (en) | 2003-03-31 | 2011-11-01 | Tokyo Electron Limited | Method and apparatus for multilayer photoresist dry development |
KR100989107B1 (ko) * | 2003-03-31 | 2010-10-25 | 인터내셔널 비지니스 머신즈 코포레이션 | 다층 포토레지스트 건식 현상을 위한 방법 및 장치 |
US7598176B2 (en) * | 2004-09-23 | 2009-10-06 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method for photoresist stripping and treatment of low-k dielectric material |
US20090078675A1 (en) * | 2007-09-26 | 2009-03-26 | Silverbrook Research Pty Ltd | Method of removing photoresist |
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CN100521088C (zh) * | 2002-12-23 | 2009-07-29 | 东京毅力科创株式会社 | 双层光刻胶干法显影的方法和装置 |
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US6824699B2 (en) | 2004-11-30 |
DE10080365T1 (de) | 2001-05-17 |
WO2000051173A1 (en) | 2000-08-31 |
CN1178280C (zh) | 2004-12-01 |
GB0022050D0 (en) | 2000-10-25 |
GB9904427D0 (en) | 1999-04-21 |
AU2683400A (en) | 2000-09-14 |
GB2353407B (en) | 2003-12-24 |
US20030201248A1 (en) | 2003-10-30 |
GB2353407A (en) | 2001-02-21 |
US6592770B1 (en) | 2003-07-15 |
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