AU3726593A - Ammonia plasma treatment of silicide contact surfaces in semiconductor devices - Google Patents

Ammonia plasma treatment of silicide contact surfaces in semiconductor devices

Info

Publication number
AU3726593A
AU3726593A AU37265/93A AU3726593A AU3726593A AU 3726593 A AU3726593 A AU 3726593A AU 37265/93 A AU37265/93 A AU 37265/93A AU 3726593 A AU3726593 A AU 3726593A AU 3726593 A AU3726593 A AU 3726593A
Authority
AU
Australia
Prior art keywords
semiconductor devices
contact surfaces
plasma treatment
ammonia plasma
silicide contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU37265/93A
Inventor
Michael J Churley
Eric C Eichman
Bruce A Sommer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Materials Research Corp
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Publication of AU3726593A publication Critical patent/AU3726593A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
AU37265/93A 1992-02-26 1993-02-22 Ammonia plasma treatment of silicide contact surfaces in semiconductor devices Abandoned AU3726593A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US84208892A 1992-02-26 1992-02-26
US842088 1992-02-26

Publications (1)

Publication Number Publication Date
AU3726593A true AU3726593A (en) 1993-09-13

Family

ID=25286498

Family Applications (1)

Application Number Title Priority Date Filing Date
AU37265/93A Abandoned AU3726593A (en) 1992-02-26 1993-02-22 Ammonia plasma treatment of silicide contact surfaces in semiconductor devices

Country Status (2)

Country Link
AU (1) AU3726593A (en)
WO (1) WO1993017453A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100218728B1 (en) * 1995-11-01 1999-09-01 김영환 Manufacturing method of metal interconnection of semiconductor device
US5852915A (en) * 1996-09-26 1998-12-29 R. R. Donnelley & Sons Company Method of making compact disc product
KR19980064028A (en) * 1996-12-12 1998-10-07 윌리엄비.켐플러 Post-etch Defluorination Low Temperature Process of Metals
US6492266B1 (en) * 1998-07-09 2002-12-10 Advanced Micro Devices, Inc. Method of forming reliable capped copper interconnects
US6613681B1 (en) * 1998-08-28 2003-09-02 Micron Technology, Inc. Method of removing etch residues
US6355571B1 (en) 1998-11-17 2002-03-12 Applied Materials, Inc. Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
US20010049181A1 (en) * 1998-11-17 2001-12-06 Sudha Rathi Plasma treatment for cooper oxide reduction
GB9904427D0 (en) 1999-02-26 1999-04-21 Trikon Holdings Ltd Method treating an insulating layer
US6313042B1 (en) * 1999-09-03 2001-11-06 Applied Materials, Inc. Cleaning contact with successive fluorine and hydrogen plasmas
US20080045030A1 (en) 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
US9614045B2 (en) 2014-09-17 2017-04-04 Infineon Technologies Ag Method of processing a semiconductor device and chip package

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4357203A (en) * 1981-12-30 1982-11-02 Rca Corporation Plasma etching of polyimide
US4731156A (en) * 1987-02-25 1988-03-15 Itt Avionics, A Division Of Itt Corporation Plasma processes for surface modification of fluoropolymers using ammonia
US5030319A (en) * 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
JP2663704B2 (en) * 1990-10-30 1997-10-15 日本電気株式会社 Corrosion prevention method for Al alloy
US5174856A (en) * 1991-08-26 1992-12-29 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from previous metal etch

Also Published As

Publication number Publication date
WO1993017453A2 (en) 1993-09-02
WO1993017453A3 (en) 1993-10-28

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