CN1282603C - 一种高效节能的气相法白炭黑合成工艺 - Google Patents
一种高效节能的气相法白炭黑合成工艺 Download PDFInfo
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- CN1282603C CN1282603C CNB200510033775XA CN200510033775A CN1282603C CN 1282603 C CN1282603 C CN 1282603C CN B200510033775X A CNB200510033775X A CN B200510033775XA CN 200510033775 A CN200510033775 A CN 200510033775A CN 1282603 C CN1282603 C CN 1282603C
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- 230000002194 synthesizing effect Effects 0.000 title abstract 2
- 239000012808 vapor phase Substances 0.000 title abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title description 4
- 229910052799 carbon Inorganic materials 0.000 title description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000002994 raw material Substances 0.000 claims abstract description 19
- -1 silicon halogen compounds Chemical class 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 10
- 238000003786 synthesis reaction Methods 0.000 claims description 10
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 9
- 239000005049 silicon tetrachloride Substances 0.000 claims description 9
- 239000005055 methyl trichlorosilane Substances 0.000 claims description 8
- 210000000988 bone and bone Anatomy 0.000 claims description 7
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 238000002485 combustion reaction Methods 0.000 claims description 4
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 4
- 239000005052 trichlorosilane Substances 0.000 claims description 4
- 229910001200 Ferrotitanium Inorganic materials 0.000 claims description 3
- QABCGOSYZHCPGN-UHFFFAOYSA-N chloro(dimethyl)silicon Chemical compound C[Si](C)Cl QABCGOSYZHCPGN-UHFFFAOYSA-N 0.000 claims description 3
- NJKDOKBDBHYMAH-UHFFFAOYSA-N dibutyl(dichloro)silane Chemical compound CCCC[Si](Cl)(Cl)CCCC NJKDOKBDBHYMAH-UHFFFAOYSA-N 0.000 claims description 3
- HAQCYFVZKUAIEU-UHFFFAOYSA-N dichloro-fluoro-methylsilane Chemical compound C[Si](F)(Cl)Cl HAQCYFVZKUAIEU-UHFFFAOYSA-N 0.000 claims description 3
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000003301 hydrolyzing effect Effects 0.000 claims description 3
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 3
- 238000009997 thermal pre-treatment Methods 0.000 claims description 3
- DOEHJNBEOVLHGL-UHFFFAOYSA-N trichloro(propyl)silane Chemical compound CCC[Si](Cl)(Cl)Cl DOEHJNBEOVLHGL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005051 trimethylchlorosilane Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 2
- LFXJGGDONSCPOF-UHFFFAOYSA-N trichloro(hexyl)silane Chemical compound CCCCCC[Si](Cl)(Cl)Cl LFXJGGDONSCPOF-UHFFFAOYSA-N 0.000 claims description 2
- 239000006229 carbon black Substances 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 5
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 2
- 241000872198 Serjania polyphylla Species 0.000 abstract 1
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- 239000000047 product Substances 0.000 description 16
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- 238000005516 engineering process Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000005265 energy consumption Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
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- 239000000725 suspension Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- WLGXLJGGAGAIDP-UHFFFAOYSA-N CN(C)C.[SiH3]Cl Chemical compound CN(C)C.[SiH3]Cl WLGXLJGGAGAIDP-UHFFFAOYSA-N 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 206010009866 Cold sweat Diseases 0.000 description 1
- XADCESSVHJOZHK-UHFFFAOYSA-N Meperidine Chemical compound C=1C=CC=CC=1C1(C(=O)OCC)CCN(C)CC1 XADCESSVHJOZHK-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 230000007774 longterm Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
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- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
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- Silicon Compounds (AREA)
Abstract
Description
编号 | 工艺配比kmol/h | 产品质量 | |||||||
CH3SiCl3 | SiCl4 | 空气 | H2 | 原生粒径(nm) | 比表面积(m2/g) | PH值(4%悬浮液) | SiO2含量(%) | 碳含量(%) | |
T141 | 1.25 | 0.75 | 17.5 | 2.O | 21 | 145 | 3.95 | 99.8 | O.010 |
T142 | 1.0 | 1.0 | 16.5 | 2.5 | 18 | 165 | 3.80 | 99.8 | 未测得 |
T143 | 1.0 | 1.0 | 17.5 | 2.5 | 16 | 197 | 4.05 | 99.8 | 未测得 |
T144 | 0.75 | 1.25 | 15.5 | 2.8 | 8 | 375 | 4.00 | 99.8 | 0.005 |
(CH3)3SiCl | SiCl4 | 空气 | H2 | 原生粒径(nm) | 比表面积(m2/g) | PH值(4%悬浮液) | SiO2含量(%) | 碳含量(%) | |
H341 | 1.0 | O.8 | 32 | 1.O | 24 | 125 | 4.3 | 99.8 | O.012 |
H342 | 1.O | 1.0 | 32 | 1.O | 19 | 151 | 4.0 | 99.8 | 0.008 |
H343 | 1.0 | 1.0 | 35 | 2.O | 22 | 140 | 4.18 | 99.8 | O.005 |
Claims (4)
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CNB200510033775XA CN1282603C (zh) | 2005-03-28 | 2005-03-28 | 一种高效节能的气相法白炭黑合成工艺 |
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CN1686791A CN1686791A (zh) | 2005-10-26 |
CN1282603C true CN1282603C (zh) | 2006-11-01 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006030002A1 (de) | 2006-06-29 | 2008-01-03 | Wacker Chemie Ag | Herstellung pyrogener Metalloxide in temperierten Reaktionskammern |
CN101209842B (zh) * | 2006-12-31 | 2010-06-30 | 北京金源化学集团有限公司 | 一种有机硅反应副产物生产白碳黑同时回收产品的方法 |
CN102120580B (zh) * | 2011-03-10 | 2013-01-02 | 上海竟茨环保科技有限公司 | 用于生产气相法二氧化硅的管道加氢装置 |
CN106241821B (zh) * | 2016-07-21 | 2018-07-03 | 宜昌南玻硅材料有限公司 | 一种纳米级气相法白炭黑原料的混合装置及方法 |
JP7479849B2 (ja) * | 2017-07-13 | 2024-05-09 | ワッカー ケミー アクチエンゲゼルシャフト | 高分散二酸化ケイ素を製造する方法 |
CN108217663B (zh) * | 2018-01-30 | 2020-06-02 | 清华大学 | 一种四氯化硅制备白炭黑的低温气相水解设备 |
CN108946742A (zh) * | 2018-09-28 | 2018-12-07 | 洛阳中硅高科技有限公司 | 提纯三氯氢硅的装置 |
CN114477196B (zh) * | 2020-10-27 | 2024-01-02 | 中国科学院过程工程研究所 | 一种氟化法制备气相白炭黑的方法 |
CN113817325A (zh) * | 2021-11-11 | 2021-12-21 | 陕西省石油化工研究设计院 | 一种新型耐高温阻燃硅橡胶及其制备方法 |
CN115194973A (zh) * | 2022-06-18 | 2022-10-18 | 南通凤凰橡胶制品有限公司 | 一种丁基橡胶再生捏合机、丁基橡胶捏合再生系统及再生工艺 |
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Denomination of invention: Technique of energy saving vapor phase process in high efficiency for synthesizing carbon white Effective date of registration: 20100429 Granted publication date: 20061101 Pledgee: Bank of China Limited by Share Ltd Guangzhou Baiyun Branch Pledgor: Guangzhou GBS High-Tech & Industry Co., Ltd. Registration number: 2010990000747 |
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Effective date of registration: 20170505 Address after: 66-2 No. 443000 Hubei city of Yichang province located in Xiaoting District Road Patentee after: Yichang HuiFu silicon material Co. Ltd. Address before: 510450 Guangdong province Guangzhou city highway Tang Bei Road Patentee before: Guangzhou GBS High-Tech & Industry Co., Ltd. |
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Address after: 66-2 No. 443007 Hubei city of Yichang province located in Xiaoting District Road Patentee after: Hubei HuiFu nano materials Co., Ltd Address before: 66-2 No. 443000 Hubei city of Yichang province located in Xiaoting District Road Patentee before: YICHANG HUIFU SILICON MATERIAL Co.,Ltd. |