CN1271241C - Apparatus and method for forming protective film on plasma display - Google Patents
Apparatus and method for forming protective film on plasma display Download PDFInfo
- Publication number
- CN1271241C CN1271241C CNB011370432A CN01137043A CN1271241C CN 1271241 C CN1271241 C CN 1271241C CN B011370432 A CNB011370432 A CN B011370432A CN 01137043 A CN01137043 A CN 01137043A CN 1271241 C CN1271241 C CN 1271241C
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- Prior art keywords
- substrate
- film forming
- plasma
- well heater
- electron beam
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
- H01J11/40—Layers for protecting or enhancing the electron emission, e.g. MgO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/228—Other specific oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/151—Deposition methods from the vapour phase by vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physical Vapour Deposition (AREA)
- Gas-Filled Discharge Tubes (AREA)
Abstract
An apparatus of forming protection coating for plasma display are provided wherein the coating is formed within the the forming chamber of a substrate. An apparatus of forming protection coating for a plasma display comprises a structure conveying the substrate, heaters for the substrate, the ring hearths filled with vaporized materials, and electron beam guns to make vapor deposition on the substrate by irradiating the vapor materials with electron beams in the ring hearths to produce vapor, features in placing a plurality of lines of vapor sources in the ring hearths at right angles to the movable direction of the substrate. Furthermore, the heaters are divided to multi-arranged, each heater is equiped with a controller for setting temperature, and a cooling structure is arranged at control board of a opening for limiting coating forming region.
Description
Technical field
The present invention relates to plasma such as a kind of MgO film and show formation device with protective membrane.
Background technology
In recent years, in order to make practicability such as giant-screen wall hung television, plasma panel (PDP) receives publicity, and uses as this display screen, forms the MgO film as protective membrane on the glass substrate.In addition, be not limited to the film forming of this plasma display screen, forming film on substrate can be applied in multiple field.This film forming is used vacuum deposition apparatus, but in order to carry out this film forming operation continuously, uses the series connection form usually.
Fig. 7 is the generally synoptic diagram of the deposited chamber of the protection membrane formation device of use of illustrating over.In deposited chamber 1, substrate 4 is set to carriage 5, heats by the well heater 6 that is arranged at its top, and move towards horizontal direction.On the other hand, be used for evaporation and be filled to 2 rotating annular sieges 3 as shown in Figure 8 to the MgO on substrate 4 surfaces, similarly electron beam 7 is shone MgO on the annular siege 3 from 2 Pierre's Si formula electron beams (EB) rifle 2, make the MgO evaporation from 4 positions lining up 1 row along the relative rectangular direction of substrate throughput direction, evaporation is stacked on the substrate 4.For example on the large-area substrate 4 of about 1m * 1.5m, form the MgO protective membrane.In addition, safeguard protective membrane membranous for the input angle θ of restriction MgO below substrate 4 this moment, and opening switchboard 8 is set.
, because MgO is the material of sublimability, so, when the part is heated, be easy to produce splash.Therefore,, must make spot wobble, enlarge evaporation area, drop into the electron beam of high-output power for not having to obtain high film forming speed under the state of splash.
As a result, the radiant heat of evaporation source makes substrate temperature rise significantly in evaporate process, and produces big temperature distribution in real estate, and the problem of the substrate breakage of glass often takes place for this reason.In addition, because the generation and the aforesaid substrate disruptive problem of splash, making the film forming speed that can produce is the limit with 2500 /min.
Figure 10 illustrates the temperature measuring result of occasion who is formed the MgO film of thick 7000 by above-mentioned existing apparatus with 200 ℃ of substrate Heating temperatures, film forming speed 2500 /min.In addition, Fig. 9 is the explanatory view that locates that substrate temperature is shown.In Fig. 9, symbol 5 is the carriage of e Foerderanlage, keeps substrate 4 by retainer 9.A and B are locating of substrate temperature.Symbol 10 is a blind patch.Can find out by measurement result, as shown in figure 10, produce maximum 80 ℃ temperature head locating between A-B in such position.
The present invention is along disposing the multiple row vapour point with the rectangular direction of substrate throughput direction, in addition, the well heater of heated substrates is divided into a plurality of settings, and at each well heater Heating temperature setting control device is set respectively, also cooling body is set at the opening switchboard that is used to be constrained to diaphragm area, thereby the temperature of the substrate in the time of can reducing film forming rises, reduce temperature distribution poor of substrate, can be on large-area substrate film forming equably, and can prevent that the temperature rising from causing substrate breakage, solved the problem of existing apparatus.
Summary of the invention
A first aspect of the present invention plasma shows that the protection membrane formation device is being formed at protective membrane in the filming chamber of substrate, substrate carrying mechanism is set respectively, heat well heater, the filling deposition material of this substrate annular siege, electron beam shone filling make deposition material evaporation and the evaporation electron beam gun to the substrate in the deposition material of above-mentioned annular siege; It is characterized in that: along disposing the vapour point that multiple row is formed by above-mentioned annular siege with the rectangular direction of the throughput direction of substrate.
Second aspect is also to have such feature on the basis of the plasma demonstration protection membrane formation device of first aspect: will be divided into a plurality of the setting to the well heater that substrate heats, and at above-mentioned each well heater Heating temperature setting control device is set respectively.
The third aspect be first or the plasma of second aspect show also have such feature on the basis of protection membrane formation device: at the opening switchboard that is used to be defined as diaphragm area cooling body is set.
The plasma of fourth aspect shows that the protective membrane method of formationing is characterised in that: when one side conveying substrate on one side during film forming, along and the rectangular direction of substrate throughput direction dispose the multiple row vapour point, thereby with high film forming speed film forming equably.
Description of drawings
Fig. 1 is the explanatory view that the formation example of electron beam gun of the present invention and annular siege is shown.
Fig. 2 is the explanatory view of another example that the formation of electron beam gun of the present invention and annular siege is shown.
Fig. 3 is the synoptic diagram of the example of protection membrane formation device of the present invention.
Fig. 4 is the performance chart that the measurement result of substrate temperature of the present invention and time is shown.
Fig. 5 illustrates the explanatory view that the present invention protects another example of membrane formation device.
Fig. 6 is the performance chart that the measurement result of substrate temperature of the present invention and time is shown.
Fig. 7 is the synoptic diagram that the example of existing protection membrane formation device is shown.
Fig. 8 is the explanatory view of example that the formation of the electron beam gun of existing protection membrane formation device and annular siege is shown.
Fig. 9 is the explanatory view that locates that substrate temperature and time are shown.
Figure 10 illustrates the substrate temperature of existing protection membrane formation device and the performance chart of the measurement result of time.
Embodiment
In the 1st form of implementation of the present invention, by filling deposition material annular siege and form vapour point to filling in the electron beam gun of the deposition material irradiating electron beam of annular siege, at the rectangular direction configuration of the throughput direction of substrate multiple row vapour point.As a result, can be on large-area substrate film forming equably.
The 2nd form of implementation of the present invention will be divided into a plurality of the setting to the well heater that substrate heats, and at this well heater Heating temperature setting control device will be set respectively.As a result, the homogenizing of substrate caloric receptivity prevents substrate breakage in the time of can realizing film forming.
The 3rd form of implementation of the present invention is provided with cooling body at the opening switchboard that is used to be defined as diaphragm area.The temperature of the substrate in the time of as a result, can reducing film forming rises.
The 4th form of implementation of the present invention is that plasma shows the protective membrane method of formationing, and wherein, on one side during film forming, court disposes a plurality of vapour points with the rectangular direction of substrate throughput direction at one side conveying substrate, thereby by high film forming speed film forming equably.
(embodiment 1)
One embodiment of the invention are described below with reference to the accompanying drawings.To the formation that in the prior art example, had illustrated, adopt same-sign, omit the part of its explanation.Fig. 1 and Fig. 2 are the explanatory view that configuration one example of the electron beam gun of MgO evaporation coating device of the present invention and annular siege is shown, and Fig. 1 illustrates the occasion that 4 electron beam guns 2 and annular siege 3 are set at deposited chamber 1 respectively.As shown in the drawing, present embodiment with the rectangular direction of substrate throughput direction on the annular siege 3 of each 2 tableland configuration 2 row.In addition, each annular siege 3 has 2 vapour points, makes each row have 4 vapour points.In addition, Fig. 2 illustrates the occasion that 2 electron beam guns 2 and annular siege 3 are set respectively.As shown in the drawing, present embodiment is towards with the rectangular direction of substrate throughput direction 2 annular sieges 3 being configured to 1 row, at each annular siege 3, towards with each 2 ground of the rectangular direction of substrate throughput direction 4 vapour points being formed 2 row.As a result, with the rectangular direction of substrate throughput direction on have 2 row vapour points of 4 of every row.Fig. 3 is the synoptic diagram of MgO evaporation coating device of the present invention.As shown in Figure 3, will be in the inside of above-mentioned deposited chamber 1 and below rotating annular siege 3 is arranged at, the electron beam gun 2 of emit electron beam is set in the side by driving mechanism (not shown)s such as motors.In addition, on annular siege 3, can dispose the carriage 5 that is used to keep by the transfer mechanism that carries out the substrate 4 that film forming glass etc. constitutes movably, dispose with fixing speed conveying substrate 4 ground towards horizontal direction.
In the above-described configuration, form film, substrate 4 is set to the carriage 5 of transfer mechanism, heat, move towards horizontal direction simultaneously by cutting apart the 6 pairs of substrates 4 of well heater that are arranged at substrate 4 tops in order on substrate 4, to carry out vacuum evaporation.Each well heater 6 can carry out temperature control ground independently and constitute.On the other hand; make above-mentioned 4 annular siege 3 revolutions of being located in the deposited chamber 1 on one side; on one side from 4 electron beam guns 2 of being located at deposited chamber 1 sidewall along with the rectangular direction of substrate throughput direction to the vapour point irradiating electron beam 7 of filling in 2 positions (with reference to Fig. 1) or 4 positions (with reference to Fig. 2) of the deposition materials such as MgO of above-mentioned annular siege 3; then the evaporation of deposition material such as above-mentioned MgO is splashed; evaporation is piled up on substrate 4, forms protective membrane.At this moment, substrate 4 is heated by the well heater 6 of cutting apart setting as described above, but owing to can control Heating temperature by the temperature-control device that is provided with respectively at each well heater 6 independently, so, can prevent the extreme temperature distribution difference generation of substrate 4.Opening switchboard 8 control MgO keep the membranous of protective membrane to the input angle θ of substrate 4.
Fig. 4 illustrates by said apparatus in 200 ℃ of temperature detection result that down the MgO film of thick 7000 are formed at the occasion on the substrate of substrate Heating temperature.As shown in Figure 4, curve A and B illustrate the substrate temperature and the evaporation time relation at measuring point A shown in Figure 9 and B place, by this measured value as can be known, and temperature rising (the Δ T before each measuring point begins evaporation
1) and by the temperature of each measuring point (the Δ T that rises
2) temperature head maximum between the measuring point A-B that produces also can be reduced to 45 ℃, the result can reduce the danger of substrate breakage significantly.In addition,, under the state that splash does not take place, can obtain the 5000 /min of 2 times of existing apparatus, make productivity bring up to 2 times for film forming speed.
(embodiment 2)
Fig. 5 is illustrated in well heater of cutting apart 6 and the device that water-cooled opening confinement plate 8 is installed below substrate 4 is set in the deposited chamber 1.The form of evaporation that is used for forming at substrate 4 protective membranes is identical with the occasion of the foregoing description 1, so adopt same-sign, the omission explanation.Fig. 6 illustrates the temperature and the evaporation time relation of the substrate of present embodiment.The condition determination of substrate temperature is identical with the occasion of embodiment 1, but by the design temperature of the well heater 6 directly over the annular siege 3 being set than low 50 ℃ of other well heater, can further reduce temperature rising (the Δ T of each measuring point
2).In addition, prevent that the temperature of substrate 4 from rising, temperature rising (the Δ T before each measuring point begins evaporation by using water-cooled opening switchboard 8
1) minimum.Water-cooled opening switchboard 8 be provided with anti-adhesion cover 8 ', adhere to prevent direct accumulating film.
In the various embodiments described above, the occasion of the evaporation that adopts electron beam only has been described, and the present invention is also applicable to the evaporation that uses plasma gun or use the reactive evaporation of hollow cathode rifle etc.In addition, also applicable to the film forming beyond the MgO.
As described above, in the present invention, by along with deposited chamber in the rectangular direction of throughput direction of substrate the multiple row vapour point is set, can be expanded into diaphragm area, and can reduce temperature distribution poor in the real estate.As a result, can improve the transfer rate of substrate, and can reduce the disruptive possibility that thermal conductance causes substrate, increase substantially productivity.
In addition,, carry out temperature control independently, and the opening confinement plate of water-cooled is set, so the caloric receptivity of may command substrate further reduces its temperature and rises owing to the well heater of cutting apart in the evaporator room setting.
In addition, in order to limit the input angle of the relative substrate of deposition material, by using the opening confinement plate of proper device cooling settings between annular siege and substrate such as water-cooled, thereby the temperature of substrate rises can prevent film forming the time, reduces the possibility of substrate breakage.
Claims (4)
1. a plasma shows the protection membrane formation device, in the filming chamber that protective membrane is formed on the substrate, substrate carrying mechanism is set respectively, heat well heater, the filling deposition material of this substrate annular siege, electron beam shone filling make deposition material evaporation and the evaporation electron beam gun to the substrate in the deposition material of above-mentioned annular siege; It is characterized in that: along disposing the vapour point that multiple row is formed by above-mentioned annular siege with the rectangular direction of the throughput direction of substrate.
2. plasma as claimed in claim 1 shows the protection membrane formation device; it is characterized in that: the well heater that will heat substrate is divided into a plurality of the setting with respect to the throughput direction of described substrate, and at above-mentioned each well heater Heating temperature is set respectively and sets and use control device.
3. plasma as claimed in claim 1 or 2 shows the protection membrane formation device, it is characterized in that: the opening switchboard at the one-tenth diaphragm area that is used to limit substrate is provided with cooling body.
4. a plasma shows the protective membrane method of formationing, it is characterized in that: when one side conveying substrate on one side during film forming, along and the rectangular direction of substrate throughput direction dispose the multiple row vapour point, thereby with high film forming speed film forming equably.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP321408/2000 | 2000-10-20 | ||
| JP2000321408A JP4570232B2 (en) | 2000-10-20 | 2000-10-20 | Plasma display protective film forming apparatus and protective film forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1351193A CN1351193A (en) | 2002-05-29 |
| CN1271241C true CN1271241C (en) | 2006-08-23 |
Family
ID=18799536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011370432A Expired - Fee Related CN1271241C (en) | 2000-10-20 | 2001-10-19 | Apparatus and method for forming protective film on plasma display |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4570232B2 (en) |
| KR (1) | KR100544407B1 (en) |
| CN (1) | CN1271241C (en) |
| TW (1) | TW550304B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1698159B (en) * | 2003-04-04 | 2010-08-18 | 松下电器产业株式会社 | Method for manufacturing plasma display panel |
| CN101660127B (en) * | 2005-03-18 | 2012-05-23 | 株式会社爱发科 | Coating method and apparatus, a permanent magnet, and manufacturing method thereof |
| CN100454475C (en) * | 2005-03-31 | 2009-01-21 | 西安交通大学 | Plasma display screen medium protection film forming apparatus with angle control |
| US7989021B2 (en) * | 2005-07-27 | 2011-08-02 | Global Oled Technology Llc | Vaporizing material at a uniform rate |
| JP4977143B2 (en) * | 2006-09-22 | 2012-07-18 | 株式会社アルバック | Vacuum processing equipment |
| RU2425174C2 (en) * | 2006-10-27 | 2011-07-27 | Улвак, Инк. | Procedure for fabrication and device for fabrication of plasma indicator panel |
| WO2010032817A1 (en) * | 2008-09-19 | 2010-03-25 | 株式会社アルバック | Method for forming protective film on plasma display panel bases, and device for forming said protective film |
| WO2010038384A1 (en) * | 2008-09-30 | 2010-04-08 | キヤノンアネルバ株式会社 | Film forming apparatus and film forming method using same |
| US20120060758A1 (en) * | 2011-03-24 | 2012-03-15 | Primestar Solar, Inc. | Dynamic system for variable heating or cooling of linearly conveyed substrates |
| US8247741B2 (en) * | 2011-03-24 | 2012-08-21 | Primestar Solar, Inc. | Dynamic system for variable heating or cooling of linearly conveyed substrates |
| JP5734079B2 (en) * | 2011-04-28 | 2015-06-10 | 株式会社アルバック | Electron beam evaporation system |
| JP7026143B2 (en) * | 2019-01-10 | 2022-02-25 | 株式会社アルバック | Thin film deposition equipment |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3847871B2 (en) * | 1996-12-17 | 2006-11-22 | 株式会社アルバック | Vapor deposition equipment |
| JPH11213869A (en) * | 1998-01-21 | 1999-08-06 | Asahi Glass Co Ltd | Method for forming protective film of ac-type plasma display panel, and device thereof |
| JP4142765B2 (en) * | 1998-05-07 | 2008-09-03 | 株式会社アルバック | Ion plating apparatus for forming sublimable metal compound thin films |
| JPH11335820A (en) * | 1998-05-20 | 1999-12-07 | Fujitsu Ltd | Vapor deposition and vapor deposition device |
| JP2000001771A (en) * | 1998-06-18 | 2000-01-07 | Hitachi Ltd | Production of dielectric protective layer and apparatus for production thereof as well as plasma display panel and image display device using the same |
| JP4197204B2 (en) * | 1998-10-23 | 2008-12-17 | キヤノンアネルバ株式会社 | Magnesium oxide production equipment |
-
2000
- 2000-10-20 JP JP2000321408A patent/JP4570232B2/en not_active Expired - Fee Related
-
2001
- 2001-10-18 TW TW090125821A patent/TW550304B/en not_active IP Right Cessation
- 2001-10-19 CN CNB011370432A patent/CN1271241C/en not_active Expired - Fee Related
- 2001-10-19 KR KR1020010064594A patent/KR100544407B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002129311A (en) | 2002-05-09 |
| JP4570232B2 (en) | 2010-10-27 |
| KR20020031071A (en) | 2002-04-26 |
| KR100544407B1 (en) | 2006-01-23 |
| TW550304B (en) | 2003-09-01 |
| CN1351193A (en) | 2002-05-29 |
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Granted publication date: 20060823 Termination date: 20191019 |