550304 A7 B7 五、發明説明（1) 【發明所屬技術領域】 本發明係關於Mg 0膜等之電漿顯示器保護膜形成裝 置° 【習知技術】 近年、爲大畫面牆掛電視等之實用化、致電漿顯示器 面板（PDP )頗受注目、而爲該面板用、則在玻璃製基 板上進行Mg〇成膜作爲保護膜。又，不限於該電漿顯示 器面板之成膜、此種在基板上形成薄膜、已被適用於各種 領域。該成膜雖使用真空蒸鍍裝置、卻爲其成膜作業之連 續進行、通常乃採用串聯形式。 圖7爲習知一般使用之保護膜形成裝置之蒸鍍室槪念 示意圖。在蒸鍍室1、基板4係被固定於搬運機構5、且 由其上方設置之加熱板6予以加熱沿水平方向移動。另、 蒸鑛於基板4表面之Mg 0、如圖8所示、乃被裝塡於兩 台轉動之環形爐膛3、藉自同樣兩台之皮爾斯式電子槍（ EB)2將電子束7照射於環形爐膛3上之Mg〇、促成 由對基板移動方向以直交方向排成一列之四處蒸發Mg〇 、以蒸鍍·堆積於基板4上。例如在約lmx1·5m之 大面積基板4上形成Mg 0保護膜。又、此時在基板4下 方設有可限制Mg〇之入射角，並維持保護膜之膜品質的 開口限制板8。 惟，M g Ο爲昇華性材料、至局部性加熱時易發生濺 水。因此，欲獲得無濺水之高成膜速率、卻需要使電子束 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 厂裝· 訂 經濟部智慧財產局員工消費合作社印製 -4 - 550304 A7 B7 五、發明説明（2) 擺動以闢寬蒸發面積、而予以投入高輸出之電子束。 (請先閲讀背面之注意事項再填寫本頁) 其結果、由於蒸發源頭之幅射熱、致使蒸鍍中基板溫 度大爲上昇、且在基板面內發生較大溫度分佈差異、其結 果有坡璃製基板常發生破裂之問題。又、由於濺水之發生 與上述基板破裂之問題、致可生產之成膜速率以2 5 0 0 A /m i η爲界限。 圖1 0爲顯示藉上述習知裝置在基板加熱溫度°C，成 膜速率250 0A/mi η、進行形成厚度7000A之 M g 0膜時之溫度測定結果。又圖9爲顯示基板溫度測定 位置之說明圖。在圖9、5爲搬運裝置之托架、由保持件 9保持基板4。A及B爲基板溫度之測定位置。又1 0爲 堵孔板。經過此種位置之測定結果、如圖1 0所示、可知 在測定位置A - B發生最大8 0 °C之溫度差。 【發明欲解決之課題】 經濟部智慧財產局員工消費合作社印製 本發明係藉將蒸發點針對基板移動方向以直交方向予 以配置多數列、及將基板加熱用之加熱件分割設置多數個 同時，在各加熱件分別予以配設加熱溫度設定用控制手段 、以及在成膜區域限定用之開口控制板裝設冷卻機構、而 減少成膜時之基板溫度之上昇與基板溫度分佈之差異、並 將大面積基板予以均勻成膜同時，亦防止溫度上昇所引起 之基板破裂、以圖消除習知裝置之問題點。 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） -5- 550304 A7 B7 五、發明説明（3) 【課題之解決手段】 申請專利第1項之本發明電漿顯示器保護膜形成裝置 、乃在將保護膜形成於基板上之成膜室內、分別設有基板 搬運機構，加熱該基板之加熱件’裝塡有蒸鍍材料之環形 爐膛，將電子束照射於上述環形爐膛所裝塡之蒸鍍材料， 促使該蒸鎪材料蒸發予以蒸鎪於基板上之電子槍的保護膜 形成裝置、將上述環形爐膛之蒸發點針對基板移動方向以 直交方向予以配置多數列爲特徵。 申請專利第2項之本發明、則是在上述第1項之電漿 顯示器保護膜形成裝置、分割設置多數個基板加熱用之加 熱件同時、更在上述各加熱件分別予以裝設加熱溫度設定 用控制手段爲特徵。 申請專利第3項之本發明、卻是在上述第1項或第2 項之電漿顯示器保護膜形成裝置、在限定成膜區域所需之 開口控制板予以裝設冷卻機構爲特徵。 申請專利第4項之本發明電漿顯示器保護膜形成方法 、係爲在搬運基板以進行成膜時、將蒸發點針對基板移動 方向以直交方向予以配置多數列、而能以高成膜速率均勻 成膜爲特徵。 【發明之實施形態】 本發明之第一實施形態乃是將由裝塡蒸鍍材料之環形 爐膛及對環形爐膛裝塡之蒸鍍材料予以照射電子束之電子 槍所形成蒸發點、針對基板搬運方向以直交方向加以配置 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 -6 - 550304 A7 B7 五、發明説明（4) 多數列者。其結果、對大面積基板能予以均勻成膜。 本發明之第二實施形態則是分割設置多數個基板加熱 用之加熱件同時、且在上述加熱件分別予以裝設加熱溫度 設定用控制手段者。其結果、可圖成膜時對於基板之加熱 量之均勻化、並防止基板之破裂。 本發明之第三實施形態卻是在限定成膜區域所需之開 口控制板予以裝設冷卻機構者。其結果、能減低成膜時之 基板溫度之上昇。 本發明之第四實施形態係爲在搬運基板以進行成膜時 、將蒸發點針對基板移動方向以直交方向予以配置多數列 、而能以高成膜速率均勻成膜的電漿顯示器保護膜形成方 法。 【實施例】 (實施例1 ) 以下，參照圖示說明本發明之一實施例。對於已在習 知例說明之構成乃附予相同符號且省略其說明之一部分。 圖1及圖2爲本發明Mg 0蒸鍍裝置之電子槍及環形爐膛 一配置例說明示意圖'圖1爲在蒸鍍室1分別各裝設四台 電子槍2及環形爐膛3時之示意圖。如同圖所示、本實施 例係將環形爐膛3針對基板搬運方向以直交方向每列兩台 予以配置兩列。又各環形爐膛3則具有兩個蒸發點可促成 各列呈四個蒸發點。又、圖2爲將電子槍2及環形爐膛3 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) •|聋 、τ 經濟部智慧財產局員工消費合作社印製 550304 A7 B7 五、發明説明（5) (請先閲讀背面之注意事項再填寫本頁) 分別各設置兩台時之示意圖。如同圖所示、本實施例乃將 兩台環形爐膛3針對基板搬運方向以直交方向予以配置一 列、各環形爐膛3卻針對基板搬運方向以直交方向每列兩 個予以配置兩列形成有四個蒸發點。其結果、針對基板搬 運方向沿直交方向具有各四個兩列之蒸發點。圖3爲本發 明之Mg〇蒸鍍裝置槪念圖。如圖3所示、上述蒸鎪室1 之內部係在下方設有由馬達等驅動機構（未圖示）加以轉 動之環形爐膛3、在側面設有放射電子束之電子槍2。又 、環形爐膛3上方更配設有保持由玻璃等材料所成之被成 膜基板4且可沿水平方向移動之搬運機構之托架5、而以 所定速度搬運基板4。 經濟部智慧財產局員工消費合作社印製 在上述構成、欲對基板4上實行真空蒸鎪予以成膜時 、乃將基板4裝載於搬運機構之托架5、藉基板4上方分 割設置之加熱板6加熱基板4並沿水平方向予以移動。且 該等加熱板6卻被構成爲可各自獨立進行溫度控制。另， 亦促使蒸鑛室1內所設上述四台環形爐膛3轉動、同時自 設於蒸鍍室1側壁之四台電子槍2向上述環形爐膛3之裝 塡有Mg ◦等蒸鍍材料之兩處（參照圖1 )或四處（參照 圖2)蒸發點以與基板搬運方向呈直交方向予以照射電子 束7時、上述Mg 0等蒸鍍材料即蒸發.飛散、在基板4 上蒸鍍·堆積形成保護膜。此時、基板4，雖如上述由分 割設置之加熱板6予以加熱、惟藉各加熱板6所設溫度控 制手段可獨立控制各自之加熱溫度、故能防止基板4發生 極端溫度分佈差異。又、開口控制板8卻可限制M g〇之 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8- 550304 A7 B7 五、發明説明（6) 對於基板4之入射角0、以維持保護膜之膜品質。 圖4爲顯示在基板加熱溫度2 0 Ot，於基板上形$ 厚度7000A之Mg〇膜時之溫度測定結果。在圖4、 曲線A及B爲顯示圖9所示測定點A及B之基板溫度與蒸 鍍時間之關係、且自其測定値可知、各測定點之蒸鍍開始 爲止之溫度上昇（ATi)與各測定點之溫度上昇（Λτ2 )所導致測定點Α - Β間之溫度差異已被減至最大亦4 5 °C爲止、結果，可大幅減低基板破裂之危險性。又、成膜 速率卻能無發生濺水地獲得習知裝置兩倍之5 0 0 0 A / m i η、而生產性即提昇至兩倍。 (實施例2 ) 圖5爲顯示在蒸鍍室1內設置分割之加熱板6，並在 基板4下方裝設水冷開口限制板8之裝置。由於在基板4 形成保護膜之蒸鍍形態與上述實施例1相同、故附予相同 符號省略其說明。圖6爲本實施例之基板溫度與蒸鍍時間 之關係顯示圖。基板溫度之測定條件雖與實施例1之情形 相同、惟藉將環形爐膛3直上之加熱板6之設定溫度予以 設定爲比其他加熱件低5 0 °C、而可更加減低各測定點之 溫度上昇（△ T 2 )。又、由於使用水冷開口限制板8以防 止基板4之溫度上昇、致各測定點之蒸鍍開始爲止之溫度 上昇（△ T i )變爲極小。在此，水冷開口限制板8爲避免 直接黏著堆積膜而設有蓋8’ 。 又、在上述各實施例，雖僅就以電子槍進行蒸鍍之情 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） Γ請先閱讀背面之注意事項再填寫本頁j -訂 經濟部智慧財產局員工消費合作社印製 -9 - 550304 A7 B7 五、發明説明（7) (請先閱讀背面之注意事項再填寫本頁) 形加以說明、惟，本發明亦可適用於使用電漿槍之蒸鍍或 使用空心陰極槍之反應性蒸鍍。又、亦可適用於M g〇以 外之成膜。 【發明之效果】 如上說明、本發明係藉與蒸鍍室內之基板搬運方向呈 直交方向設置有多數列之蒸發點、致能擴寬成膜區域、並 可減小基板面內之溫度分佈差異。結果、可提高基板之搬 運速度同時、尙能減少熱所引起之基板破裂之機會、而大 幅提昇生產性。 又、在蒸鍍室設置被分割之加熱件，予以各自獨立進 行溫度控、且裝設經過水冷之開口限制板、故可控制對於 基板之輸入熱量、更減低其溫度上昇。 又、爲限制對於基板之蒸鍍材料入射角、乃將設置於 環形爐膛與基板間之開口限制板使用水冷等適當手段予以 冷卻、因此，可防止成膜時之基板溫度上昇、減少基板破 裂之機會。 經濟部智慧財產局員工消費合作社印製 【圖示之簡單說明】 圖1爲本發明電子槍與環形爐膛之構成實例說明用顯 示圖 圖2爲本發明電子槍與環形爐膛之其他構成實例說明 用顯不圖 圖3爲本發明保護膜形成裝置之實例槪念示意圖 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -10- 550304 A7 B7 五、發明説明（8) 圖4爲本發明之基板溫度與時間之測定結果特性顯示 圖 圖5爲本發明保護膜形成裝置之其他實例說明用顯示 圖 圖6爲本發明之基板溫度與時間之測定結果特性顯示 圖 圖7爲習知保護膜形成裝置之實例槪念示意圖 圖8爲習知保護膜形成裝置之電子槍與環形爐膛之構 成實例說明用顯示圖 圖9爲基板溫度與時間之測定位置說明用顯示圖。 圖10爲顯示以往之保護膜形成之基板溫度和時間之測定結果之特性圖。 【符號說明】 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1 蒸鍍室 2 電子槍 3 環形爐膛 4 基板 5 搬運機構 6 加熱件 7 電子束 8 開口限制板 9 保持件 10 堵孔板 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -11 -550304 A7 B7 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a protective film forming device for a plasma display of a Mg 0 film, etc. [Knowledge technology] In recent years, it has been practically used for large-screen wall-mounted TVs, etc. The telephone display panel (PDP) attracts much attention. For this panel, MgO film is formed on a glass substrate as a protective film. Moreover, it is not limited to the film formation of the plasma display panel, and such a thin film formation on a substrate has been applied to various fields. Although this film formation uses a vacuum evaporation device, the film formation operation is continuously performed, and usually a serial form is used. Fig. 7 is a schematic view of a vapor deposition chamber of a conventional protective film forming apparatus. The vapor deposition chamber 1 and the substrate 4 are fixed to the conveyance mechanism 5 and heated by a heating plate 6 provided above the heating mechanism 6 to move in a horizontal direction. In addition, the Mg 0 steamed on the surface of the substrate 4, as shown in FIG. 8, is installed in two rotating ring furnaces 3. The electron beam 7 is irradiated on the same two Pierce-type electron guns (EB) 2 The Mg0 on the ring furnace 3 promotes the evaporation of Mg0 at four places in a row in a direction orthogonal to the substrate moving direction, and is deposited on the substrate 4 by evaporation. For example, a Mg 0 protective film is formed on a large-area substrate 4 having a size of about lmx 1.5 m. At this time, an opening limiting plate 8 is provided below the substrate 4 to limit the incident angle of Mg0 and maintain the film quality of the protective film. However, M g 〇 is a sublimable material, and it is easy to splash water when it is locally heated. Therefore, in order to obtain a high film formation rate without splashing water, the paper size of the electron beam needs to be adapted to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) Factory installed · Order printed by the Intellectual Property Bureau's Consumer Cooperatives of the Ministry of Economic Affairs-4-550304 A7 B7 V. Description of the invention (2) Swing to widen the evaporation area and input high-output electron beams. (Please read the precautions on the back before filling this page.) As a result, the temperature of the substrate during evaporation is greatly increased due to the radiation heat from the evaporation source, and a large temperature distribution difference occurs within the substrate surface. Problems with glass substrates often occur. In addition, due to the problem of splashing water and the above-mentioned substrate cracking, the film formation rate that can be produced is limited to 2500 A / m i η. Fig. 10 shows the temperature measurement results when the conventional device was used to heat the substrate at a temperature of ° C, the film formation rate was 250 0A / mi η, and an M g 0 film having a thickness of 7000 A was formed. Fig. 9 is an explanatory diagram showing a substrate temperature measurement position. In Figs. 9 and 5, the carrier of the conveying device is held, and the substrate 4 is held by the holder 9. As shown in Figs. A and B are measurement positions of the substrate temperature. Another 10 is a plugging plate. As a result of the measurement at this position, as shown in Fig. 10, it can be seen that a maximum temperature difference of 80 ° C occurs at the measurement positions A-B. [Problems to be Solved by the Invention] Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The present invention is to arrange a plurality of rows of evaporation points in a direction orthogonal to the substrate moving direction, and divide a plurality of heating elements for heating the substrate. Each heating element is provided with a control means for setting a heating temperature, and a cooling mechanism is installed in the opening control board for limiting the film formation area, so as to reduce the difference between the substrate temperature rise and the substrate temperature distribution during film formation, and Large-area substrates are uniformly filmed, and the substrates are prevented from cracking caused by temperature rise, in order to eliminate the problems of conventional devices. This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) -5- 550304 A7 B7 V. Description of the invention (3) [Solution to the problem] Application of the first plasma protection display film of the invention The forming device is provided with a substrate conveying mechanism in a film forming chamber in which a protective film is formed on a substrate. The heating element for heating the substrate is a ring furnace equipped with a vapor deposition material, and the electron beam is irradiated to the ring furnace. The deposited vapor deposition material promotes the evaporation of the vapor deposition material to a protective film forming device of an electron gun vaporized on the substrate, and the evaporation point of the annular furnace is arranged in a direction orthogonal to the substrate moving direction. The invention of claim 2 is a device for forming a protective film for a plasma display of the above item 1, and a plurality of heating elements for heating substrates are provided separately, and heating temperatures are set on each of the heating elements. Features control. The invention of claim 3 is characterized in that the plasma display display protective film forming device of the above item 1 or item 2 is provided with a cooling mechanism in the opening control board required to define the film forming area. The method for forming a protective film for a plasma display of the present invention, which is filed under the fourth item of the patent, is to arrange a plurality of rows of the evaporation points in a direction orthogonal to the substrate moving direction when the substrate is being transported for film formation, and can uniformly form the film at a high rate Features film formation. [Embodiment of the invention] The first embodiment of the present invention is an evaporation point formed by a ring furnace containing a vapor deposition material and an electron gun that irradiates an electron beam to the material deposited on the ring furnace. Configured in the orthogonal direction. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page.) Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives-6-550304 A7 B7 V. Description of Invention (4) Most of the listed. As a result, a large-area substrate can be uniformly formed into a film. In the second embodiment of the present invention, a plurality of heating elements for heating the substrate are provided separately, and the heating means for controlling the setting of the heating temperature is installed on the heating elements at the same time. As a result, it is possible to make the amount of heating of the substrate uniform during film formation, and to prevent the substrate from cracking. In the third embodiment of the present invention, a cooling mechanism is provided in the opening control board required to limit the film formation area. As a result, it is possible to reduce the increase in substrate temperature during film formation. A fourth embodiment of the present invention is a plasma display protective film formed by arranging a plurality of rows of evaporation points in a direction orthogonal to the substrate moving direction when the substrate is transported for film formation, and capable of uniformly forming a film at a high film formation rate. method. [Embodiment] (Embodiment 1) Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The components already explained in the conventional examples are given the same symbols, and a part of the description is omitted. FIG. 1 and FIG. 2 are schematic diagrams illustrating a configuration example of the electron gun and the annular furnace of the Mg 0 evaporation device of the present invention. FIG. 1 is a schematic diagram when four electron guns 2 and the annular furnace 3 are respectively installed in the evaporation chamber 1. As shown in the figure, in the present embodiment, the annular furnace 3 is arranged in two rows in two rows in a direction orthogonal to the substrate conveying direction. In addition, each ring furnace 3 has two evaporation points, which can promote four evaporation points in each row. In addition, Figure 2 shows the paper size of the electron gun 2 and the ring furnace 3. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling out this page) • | Deaf, τ Wisdom of the Ministry of Economy Printed by the Consumer Cooperative of the Property Bureau 550304 A7 B7 V. Description of the invention (5) (Please read the precautions on the back before filling this page) Schematic diagram when two units are set up respectively. As shown in the figure, in this embodiment, two annular furnaces 3 are arranged in a row in the orthogonal direction with respect to the substrate conveying direction, but each of the annular furnaces 3 is arranged in the orthogonal direction with two in each row. Evaporation point. As a result, there are four or two evaporation points in the orthogonal direction with respect to the substrate transportation direction. Fig. 3 is a schematic diagram of a MgO vapor deposition apparatus of the present invention. As shown in Fig. 3, the inside of the steaming chamber 1 is provided below with a ring furnace 3 rotated by a driving mechanism (not shown) such as a motor, and an electron gun 2 radiating an electron beam on the side. Further, a bracket 5 is disposed above the ring-shaped furnace 3 to hold a film-forming substrate 4 made of a material such as glass and is movable in a horizontal direction to carry the substrate 4 at a predetermined speed. When printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the above-mentioned structure is to be vacuum-evaporated on the substrate 4 to form a film, the substrate 4 is mounted on the carrier 5 of the conveying mechanism, and the heating plate is divided by the upper part of the substrate 4. 6 Heat the substrate 4 and move it in the horizontal direction. In addition, the heating plates 6 are configured to be independently temperature-controllable. In addition, it also promotes the rotation of the four annular furnaces 3 set in the steaming chamber 1, and simultaneously installs two of the evaporation materials such as Mg from the four electron guns 2 provided on the side wall of the evaporation chamber 1 to the annular furnace 3. (Refer to FIG. 1) or four (refer to FIG. 2) evaporation points are irradiated with the electron beam 7 in a direction orthogonal to the substrate conveying direction, and the evaporation materials such as Mg 0 described above evaporate. Scatter, deposit and deposit on the substrate 4 Form a protective film. At this time, although the substrate 4 is heated by the heating plate 6 provided separately as described above, the respective heating temperatures can be independently controlled by the temperature control means provided in each heating plate 6, so that the substrate 4 can be prevented from generating extreme temperature distribution differences. In addition, the opening control board 8 can limit the paper size of M g0 to the Chinese national standard (CNS) A4 specification (210X297 mm) -8- 550304 A7 B7 V. Description of the invention (6) The incidence angle for the substrate 4 0 In order to maintain the film quality of the protective film. FIG. 4 shows the temperature measurement results when a Mg0 film with a thickness of 7000 A is formed on the substrate at a substrate heating temperature of 20 Ot. In FIG. 4, the curves A and B show the relationship between the substrate temperature and the deposition time at the measurement points A and B shown in FIG. 9, and it can be seen from the measurement results that the temperature rise (ATi) until the start of the vapor deposition at each measurement point. The temperature difference between the measurement points A and B caused by the temperature rise (Λτ2) from each measurement point has been reduced to a maximum of 45 ° C. As a result, the risk of substrate breakage can be greatly reduced. In addition, the film-forming rate can obtain 50,000 A / m i η, which is twice that of the conventional device, without splashing, and the productivity is doubled. (Embodiment 2) Fig. 5 shows a device in which a divided heating plate 6 is provided in a vapor deposition chamber 1, and a water-cooled opening restricting plate 8 is installed below the substrate 4. Since the form of vapor deposition for forming a protective film on the substrate 4 is the same as that of the first embodiment, the same reference numerals are attached and the description is omitted. Fig. 6 is a graph showing the relationship between the substrate temperature and the evaporation time in this embodiment. Although the measurement conditions of the substrate temperature are the same as those in Example 1, the temperature of each measurement point can be further reduced by setting the set temperature of the heating plate 6 which is directly above the annular furnace 3 to 50 ° C lower than other heating elements. Increase (△ T 2). In addition, the use of the water-cooled opening restricting plate 8 prevents the temperature of the substrate 4 from increasing, so that the temperature rise (ΔT i) until the start of vapor deposition at each measurement point becomes extremely small. Here, the water-cooled opening restricting plate 8 is provided with a cover 8 'in order to avoid direct adhesion to the deposited film. In the above-mentioned embodiments, although only the electron gun is used for vapor deposition, the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) Γ Please read the precautions on the back before filling in this page Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -9-550304 A7 B7 V. Description of the invention (7) (Please read the precautions on the back before filling this page), but the invention can also be applied to the use of electricity Evaporation of slurry guns or reactive evaporation using hollow cathode guns. It is also suitable for film formation other than M g0. [Effects of the Invention] As described above, the present invention is provided with a plurality of rows of evaporation points in a direction orthogonal to the substrate transport direction in the evaporation chamber, which can widen the film formation area and reduce the difference in temperature distribution within the substrate surface. . As a result, the substrate transportation speed can be increased, and the chance of substrate cracking caused by heat can be reduced, and productivity can be greatly improved. In addition, divided heating elements are provided in the vapor deposition chamber, each of which is independently temperature-controlled and a water-cooled opening limiting plate is installed, so that the input heat to the substrate can be controlled and the temperature rise can be reduced. In addition, in order to limit the incident angle of the vapor deposition material to the substrate, the opening limiting plate provided between the annular furnace and the substrate is cooled by appropriate means such as water cooling. Therefore, it is possible to prevent the substrate temperature from rising during film formation and reduce the substrate crack opportunity. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs [Simplified illustration of the figure] Figure 1 is a diagram showing an example of the configuration of the electron gun and the ring furnace of the present invention. Figure 2 is a diagram showing the other examples of the structure of the electron gun and the ring furnace of the present invention. Figure 3 is a schematic diagram of an example of a protective film forming device of the present invention. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -10- 550304 A7 B7. 5. Description of the invention (8) Figure 4 is the invention Characteristic display results of substrate temperature and time measurement FIG. 5 is a display for explaining another example of the protective film forming apparatus of the present invention FIG. 6 Characteristic display results of substrate temperature and time measurement of the present invention FIG. 7 is a conventional protective film Schematic diagram of an example of a forming device. FIG. 8 is a display for explaining an example of the configuration of an electron gun and a ring furnace of a conventional protective film forming device. FIG. 9 is a display for explaining a measurement position of a substrate temperature and time. FIG. 10 is a characteristic diagram showing measurement results of substrate temperature and time of a conventional protective film formation. [Symbol description] (Please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Printed by the Consumer Cooperatives of the Ministry of Economic Affairs, 1 Evaporation Chamber, 2 Electron Gun, 3 Ring Furnace, 4 Substrate, 5 Carrier, 6 Heating Element, 7 Electron Beam, 8 Opening Limit Plate 9 Holder 10 Hole plug plate This paper is sized to the Chinese National Standard (CNS) A4 (210X297 mm) -11-