CN1257558C - 将金属接点沉积在埋栅太阳能电池上的方法及由该方法获得的太阳能电池 - Google Patents
将金属接点沉积在埋栅太阳能电池上的方法及由该方法获得的太阳能电池 Download PDFInfo
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- CN1257558C CN1257558C CNB018141854A CN01814185A CN1257558C CN 1257558 C CN1257558 C CN 1257558C CN B018141854 A CNB018141854 A CN B018141854A CN 01814185 A CN01814185 A CN 01814185A CN 1257558 C CN1257558 C CN 1257558C
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00610081A EP1182709A1 (en) | 2000-08-14 | 2000-08-14 | A process for depositing metal contacts on a buried grid solar cell and a solar cell obtained by the process |
EP00610081.2 | 2000-08-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1447989A CN1447989A (zh) | 2003-10-08 |
CN1257558C true CN1257558C (zh) | 2006-05-24 |
Family
ID=8174404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018141854A Expired - Fee Related CN1257558C (zh) | 2000-08-14 | 2001-08-14 | 将金属接点沉积在埋栅太阳能电池上的方法及由该方法获得的太阳能电池 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6881671B2 (zh) |
EP (1) | EP1182709A1 (zh) |
JP (1) | JP2004507093A (zh) |
KR (1) | KR100870163B1 (zh) |
CN (1) | CN1257558C (zh) |
AU (2) | AU2001279604B2 (zh) |
WO (1) | WO2002015282A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103726088A (zh) * | 2013-12-25 | 2014-04-16 | 国电新能源技术研究院 | 一种改进的晶硅太阳能电池铜电镀方法 |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
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2000
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- 2001-08-14 KR KR1020037001923A patent/KR100870163B1/ko not_active IP Right Cessation
- 2001-08-14 CN CNB018141854A patent/CN1257558C/zh not_active Expired - Fee Related
- 2001-08-14 WO PCT/DK2001/000536 patent/WO2002015282A1/en active Application Filing
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Cited By (2)
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CN103726088A (zh) * | 2013-12-25 | 2014-04-16 | 国电新能源技术研究院 | 一种改进的晶硅太阳能电池铜电镀方法 |
CN103726088B (zh) * | 2013-12-25 | 2017-07-28 | 国电新能源技术研究院 | 一种改进的晶硅太阳能电池铜电镀方法 |
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JP2004507093A (ja) | 2004-03-04 |
AU7960401A (en) | 2002-02-25 |
US6881671B2 (en) | 2005-04-19 |
EP1182709A1 (en) | 2002-02-27 |
CN1447989A (zh) | 2003-10-08 |
WO2002015282A1 (en) | 2002-02-21 |
KR20030027015A (ko) | 2003-04-03 |
US20030172969A1 (en) | 2003-09-18 |
AU2001279604B2 (en) | 2006-07-06 |
KR100870163B1 (ko) | 2008-11-25 |
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