CN1252834C - 用自对准硅化物工艺形成的mosfet及其制造方法 - Google Patents

用自对准硅化物工艺形成的mosfet及其制造方法 Download PDF

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Publication number
CN1252834C
CN1252834C CNB031567274A CN03156727A CN1252834C CN 1252834 C CN1252834 C CN 1252834C CN B031567274 A CNB031567274 A CN B031567274A CN 03156727 A CN03156727 A CN 03156727A CN 1252834 C CN1252834 C CN 1252834C
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CN
China
Prior art keywords
mentioned
film
gate electrode
semiconductor device
region
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Expired - Fee Related
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CNB031567274A
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English (en)
Chinese (zh)
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CN1495911A (zh
Inventor
出羽光明
饭沼俊彦
须黑恭一
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Toshiba Corp
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Toshiba Corp
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Publication of CN1495911A publication Critical patent/CN1495911A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01314—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of Ge, C or of compounds of Si, Ge or C contacting the insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB031567274A 2002-09-13 2003-09-08 用自对准硅化物工艺形成的mosfet及其制造方法 Expired - Fee Related CN1252834C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP268970/2002 2002-09-13
JP2002268970A JP2004111479A (ja) 2002-09-13 2002-09-13 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN1495911A CN1495911A (zh) 2004-05-12
CN1252834C true CN1252834C (zh) 2006-04-19

Family

ID=32267040

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031567274A Expired - Fee Related CN1252834C (zh) 2002-09-13 2003-09-08 用自对准硅化物工艺形成的mosfet及其制造方法

Country Status (5)

Country Link
US (1) US20040113209A1 (https=)
JP (1) JP2004111479A (https=)
KR (1) KR100508840B1 (https=)
CN (1) CN1252834C (https=)
TW (1) TW200406849A (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050253205A1 (en) * 2004-05-17 2005-11-17 Fujitsu Limited Semiconductor device and method for fabricating the same
CN1700478A (zh) * 2004-05-17 2005-11-23 富士通株式会社 半导体器件及其制造方法
KR100678314B1 (ko) * 2004-12-15 2007-02-02 동부일렉트로닉스 주식회사 저접촉저항을 갖는 반도체 소자의 제조방법
KR100731096B1 (ko) 2005-12-28 2007-06-22 동부일렉트로닉스 주식회사 반도체 소자 및 이의 제조방법
US8258057B2 (en) * 2006-03-30 2012-09-04 Intel Corporation Copper-filled trench contact for transistor performance improvement
US7566605B2 (en) * 2006-03-31 2009-07-28 Intel Corporation Epitaxial silicon germanium for reduced contact resistance in field-effect transistors
JP4983087B2 (ja) * 2006-04-27 2012-07-25 富士通セミコンダクター株式会社 成膜方法、半導体装置の製造方法、コンピュータ可読記録媒体、スパッタ処理装置
JP2008071890A (ja) * 2006-09-13 2008-03-27 Toshiba Corp 半導体装置及びその製造方法
JP5309454B2 (ja) * 2006-10-11 2013-10-09 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2008141003A (ja) * 2006-12-01 2008-06-19 Toshiba Corp 半導体装置の製造方法
JP5211503B2 (ja) * 2007-02-16 2013-06-12 富士通セミコンダクター株式会社 半導体装置の製造方法
TW200910526A (en) 2007-07-03 2009-03-01 Renesas Tech Corp Method of manufacturing semiconductor device
CN102446970B (zh) * 2011-08-29 2014-05-28 上海华力微电子有限公司 一种防止酸槽清洗空洞形成的半导体器件及其制备方法
CN110571190B (zh) * 2018-06-05 2022-02-08 中芯国际集成电路制造(上海)有限公司 接触插塞的形成方法和刻蚀方法
US11222820B2 (en) * 2018-06-27 2022-01-11 International Business Machines Corporation Self-aligned gate cap including an etch-stop layer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2740087B2 (ja) * 1992-08-15 1998-04-15 株式会社東芝 半導体集積回路装置の製造方法
US5427964A (en) * 1994-04-04 1995-06-27 Motorola, Inc. Insulated gate field effect transistor and method for fabricating
JP3219996B2 (ja) * 1995-03-27 2001-10-15 株式会社東芝 半導体装置及びその製造方法
JP3199015B2 (ja) * 1998-02-04 2001-08-13 日本電気株式会社 半導体装置及びその製造方法
US6063680A (en) * 1998-02-19 2000-05-16 Texas Instruments - Acer Incorporated MOSFETS with a recessed self-aligned silicide contact and an extended source/drain junction
JP3547419B2 (ja) * 2001-03-13 2004-07-28 株式会社東芝 半導体装置及びその製造方法
US6506637B2 (en) * 2001-03-23 2003-01-14 Sharp Laboratories Of America, Inc. Method to form thermally stable nickel germanosilicide on SiGe
TWI284348B (en) * 2002-07-01 2007-07-21 Macronix Int Co Ltd Method for fabricating raised source/drain of semiconductor device

Also Published As

Publication number Publication date
KR100508840B1 (ko) 2005-08-18
KR20040024501A (ko) 2004-03-20
TW200406849A (en) 2004-05-01
JP2004111479A (ja) 2004-04-08
CN1495911A (zh) 2004-05-12
US20040113209A1 (en) 2004-06-17

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