CN1250766C - 制造复合材料的方法以及该方法制造的复合材料 - Google Patents

制造复合材料的方法以及该方法制造的复合材料 Download PDF

Info

Publication number
CN1250766C
CN1250766C CNB018001831A CN01800183A CN1250766C CN 1250766 C CN1250766 C CN 1250766C CN B018001831 A CNB018001831 A CN B018001831A CN 01800183 A CN01800183 A CN 01800183A CN 1250766 C CN1250766 C CN 1250766C
Authority
CN
China
Prior art keywords
base material
aluminium
composite material
dispersing
block object
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018001831A
Other languages
English (en)
Chinese (zh)
Other versions
CN1362998A (zh
Inventor
久保田高史
渡边弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Mining and Smelting Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Publication of CN1362998A publication Critical patent/CN1362998A/zh
Application granted granted Critical
Publication of CN1250766C publication Critical patent/CN1250766C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CNB018001831A 2000-03-13 2001-03-06 制造复合材料的方法以及该方法制造的复合材料 Expired - Fee Related CN1250766C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000068049 2000-03-13
JP068049/00 2000-03-13
JP068048/00 2000-03-13
JP2000068048 2000-03-13

Publications (2)

Publication Number Publication Date
CN1362998A CN1362998A (zh) 2002-08-07
CN1250766C true CN1250766C (zh) 2006-04-12

Family

ID=26587272

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018001831A Expired - Fee Related CN1250766C (zh) 2000-03-13 2001-03-06 制造复合材料的方法以及该方法制造的复合材料

Country Status (6)

Country Link
US (1) US20030056928A1 (fr)
JP (1) JP4060595B2 (fr)
KR (1) KR100446563B1 (fr)
CN (1) CN1250766C (fr)
TW (1) TWI257431B (fr)
WO (1) WO2001068936A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104169457A (zh) * 2012-03-15 2014-11-26 吉坤日矿日石金属株式会社 磁性材料溅射靶及其制造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040084305A1 (en) * 2002-10-25 2004-05-06 Semiconductor Energy Laboratory Co., Ltd. Sputtering system and manufacturing method of thin film
JPWO2004092440A1 (ja) * 2003-04-16 2006-07-06 株式会社ブリヂストン 多孔質薄膜の形成方法
US20050133121A1 (en) * 2003-12-22 2005-06-23 General Electric Company Metallic alloy nanocomposite for high-temperature structural components and methods of making
US7255757B2 (en) 2003-12-22 2007-08-14 General Electric Company Nano particle-reinforced Mo alloys for x-ray targets and method to make
JP2006080170A (ja) * 2004-09-08 2006-03-23 Hitachi Cable Ltd Ｃｎｔ入り配線材の製造方法およびスパッタリング用ターゲット材
US7632761B2 (en) * 2006-06-01 2009-12-15 Wayne State University Method of making thin film anatase titanium dioxide
KR101149408B1 (ko) * 2006-11-15 2012-06-01 삼성전자주식회사 연료 전지용 전극의 제조 방법 및 제조 장치
DE102007056678A1 (de) * 2007-11-24 2009-05-28 Bayerische Motoren Werke Aktiengesellschaft Verfahren zur Herstellung eines Bauteils aus einem Metallmatrix-Verbundwerkstoff
JP5117357B2 (ja) * 2008-11-26 2013-01-16 株式会社アルバック 永久磁石の製造方法
JP6586618B2 (ja) * 2014-08-07 2019-10-09 国立大学法人豊橋技術科学大学 Ｄｌｃ膜形成方法及びｄｌｃ膜形成装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292079A (en) * 1978-10-16 1981-09-29 The International Nickel Co., Inc. High strength aluminum alloy and process
US4624705A (en) * 1986-04-04 1986-11-25 Inco Alloys International, Inc. Mechanical alloying
JPH01125921A (ja) * 1987-11-11 1989-05-18 Meidensha Corp 半導体化炭素薄膜の製造方法
US4834942A (en) * 1988-01-29 1989-05-30 The United States Of America As Represented By The Secretary Of The Navy Elevated temperature aluminum-titanium alloy by powder metallurgy process
US4832734A (en) * 1988-05-06 1989-05-23 Inco Alloys International, Inc. Hot working aluminum-base alloys
US5045278A (en) * 1989-11-09 1991-09-03 Allied-Signal Inc. Dual processing of aluminum base metal matrix composites
US5401587A (en) * 1990-03-27 1995-03-28 Kabushiki Kaisha Toyota Chuo Kenkyusho Anisotropic nanophase composite material and method of producing same
US5169461A (en) * 1990-11-19 1992-12-08 Inco Alloys International, Inc. High temperature aluminum-base alloy
US5171381A (en) * 1991-02-28 1992-12-15 Inco Alloys International, Inc. Intermediate temperature aluminum-base alloy
JPH0578197A (ja) * 1991-03-15 1993-03-30 Kyocera Corp ＴｉＯ２−ＳｎＯ２膜の製法
JP3221892B2 (ja) * 1991-09-20 2001-10-22 帝国ピストンリング株式会社 ピストンリング及びその製造法
JPH07207436A (ja) * 1994-01-24 1995-08-08 Sekisui Chem Co Ltd スパッタリング装置
JP2809984B2 (ja) * 1994-01-27 1998-10-15 株式会社リケン ピストンリング及びその製造方法
JP3367269B2 (ja) * 1994-05-24 2003-01-14 株式会社豊田中央研究所 アルミニウム合金およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104169457A (zh) * 2012-03-15 2014-11-26 吉坤日矿日石金属株式会社 磁性材料溅射靶及其制造方法
CN106048545A (zh) * 2012-03-15 2016-10-26 吉坤日矿日石金属株式会社 磁性材料溅射靶及其制造方法

Also Published As

Publication number Publication date
US20030056928A1 (en) 2003-03-27
KR20010113893A (ko) 2001-12-28
WO2001068936A1 (fr) 2001-09-20
CN1362998A (zh) 2002-08-07
JP4060595B2 (ja) 2008-03-12
KR100446563B1 (ko) 2004-09-04
TWI257431B (en) 2006-07-01

Similar Documents

Publication Publication Date Title
CN1250766C (zh) 制造复合材料的方法以及该方法制造的复合材料
CN1256998C (zh) 升华精制的方法和装置
JP5733208B2 (ja) イオンプレーティング用タブレットとその製造方法、および透明導電膜
JP5764828B2 (ja) 酸化物焼結体およびそれを加工したタブレット
CN1878886A (zh) 溅镀靶材
EP1497479A1 (fr) Procedes et appareil destines au depot de films minces
Wang et al. Titanium-modified graphite reinforced Cu-Ni composite by multi-arc ion plating technology
WO2023208249A1 (fr) Procédé de préparation de matériau cible de tube en alliage de molybdène, matériau cible de tube en alliage de molybdène, et application
CN110129596B (zh) 薄带状纳米Al3(Sc,Zr)/Al复合孕育剂的制备方法
Gleiter Structure and properties of nanometer-sized materials
US8545942B2 (en) Method for producing clathrate compounds
JP2002190512A (ja) 静電チャックおよびその製造方法
CN1547623A (zh) 物理汽相淀积靶及形成方法
JP6274026B2 (ja) 銅合金スパッタリングターゲット及び銅合金スパッタリングターゲットの製造方法
CN2772173Y (zh) 薄膜发热组件
JP3281173B2 (ja) 高硬度薄膜及びその製造方法
CN1119851A (zh) Ito烧结体、ito透明导电膜及此膜的形成方法
JP4917725B2 (ja) 透明導電膜およびその製造方法並びにその用途
CN1714167A (zh) 电阻加热舟皿及其制造方法
EP2201076A1 (fr) Procédé de production de films solides et poreux à partir de matières particulaires par source à flux de chaleur élevée
JP4524577B2 (ja) 透明導電膜およびスパッタリングターゲット
Bozack et al. Wettability of transition metal boride eutectic alloys to graphite
CN1609263A (zh) 微层耐热材料的制造方法
CN1760406A (zh) 一种金属/氧化物弥散强化金属多层薄板的制备方法
CN1386879A (zh) 铝系合金靶材的制造方法及用该方法得到的铝系合金靶材

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060412

Termination date: 20100306