CN1241457A - 清洗锆钛酸铅薄膜的方法 - Google Patents

清洗锆钛酸铅薄膜的方法 Download PDF

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CN1241457A
CN1241457A CN99110200A CN99110200A CN1241457A CN 1241457 A CN1241457 A CN 1241457A CN 99110200 A CN99110200 A CN 99110200A CN 99110200 A CN99110200 A CN 99110200A CN 1241457 A CN1241457 A CN 1241457A
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李俊冀
金昌桢
郑一燮
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Abstract

提供了一种采用浸蚀剂清洗PZT薄膜的方法。该方法采用HF(或缓冲氧化物浸蚀剂(BOE)和乙酸的混合物,或HF(BOE)、乙酸和醇的混合物,作为浸蚀剂,从而降低了PZT薄膜的浸蚀速率,该浸蚀速率在很大程度上取决于HF的浓度,进而可以采用这种浸蚀剂把PZT薄膜浸蚀去掉一个较薄的厚度为100埃或更薄。所以,只有PZT薄膜表面上的第二相晶体或浸蚀破坏层能被去除。

Description

清洗锆钛酸铅薄膜的方法
本发明涉及采用浸蚀剂清洗锆钛酸铅(PZT)薄膜的方法。
PZT薄膜是一种在Pb(ZrxTi1-x)O3中添加La、Sr、Ca、Sc、Nb、Ta、Ni、Fe或Er元素的薄膜。在采用PZT薄膜制造半导体器件比如铁电随机存储器(FRAM)的过程中，PZT薄膜存在着各种各样的劣化机制。按照薄膜的生长机理，缺陷以及对铁电特性有妨碍的组分都集中于PZT薄膜的表面。这些材料一般称之为第二相材料，比如氧化铅或焦绿石相材料，它们均为不具备铁电性的顺电材料，从而降低了电容特性。由于焦绿石相比钙钛矿相热力学性能差，因而在集成过程中更易被破坏，进而加速了电容特性的劣化。同时，在干蚀过程中，在PZT薄膜的侧表面出现了由于等离子体导致的破坏层。这些层直接与上电极及下电极相连，通过对其进行分析表明它们不具有结晶性并且其厚度为100埃或更薄(请参见扫描电子显微镜(SEM)照片)。由于它们的强金属性而起一个漏电通路的作用。
图1为一个采用常规方法制备的未经清洗的铁电电容器的横断面图。如图1所示，常规的铁电电容器是这样构成的，在下电极1上形成PZT薄膜2，随后在PZT薄膜2上沉积上电极3，再将其浸蚀至预定的尺寸。当采用干蚀法处理PZT薄膜2时，由于等离子体导致的薄的浸蚀破坏层4将会遗留在PZT薄膜2的侧表面上，这将引起漏导电流增大。
为解决上述问题，本发明的目的在于提供一种清洁PZT薄膜的方法，以消除制备过程中产生的位于PZT薄膜上表面或侧面的第二相晶体或浸蚀破坏层，从而提高铁电电容器的性能。
为了实现本发明的第一目标，这里提供一种采用浸蚀剂清洁PZT薄膜的方法，包括以下步骤，将PZT薄膜浸入一种包含有HF和乙酸的浸蚀剂中，以浸蚀PZT薄膜的表面。
在本发明中，在包含氢氟酸和乙酸的浸蚀剂中还可以加入醇，该醇优选是选自由甲醇、乙醇和丙醇组成的组中的至少一种。还可以用一种极性溶剂取代醇，该极性溶剂选自DMSO、DMF、二氧杂环己烷、THF、NMP、吡啶、CCI3H、CCIH3中的至少一种。
通过参照附图详述一种优选实施方案，本发明的上述目的和优点将会更清楚。
图1是一个横断面图，示出了一个采用常规方法制备的未经清洗处理的铁电电容器。
图2A和2B示出了一种按照本发明采用浸蚀剂清洗后的PZT薄膜，其中图2A是该PZT薄膜的横断面示意图，图2B是一个PZT薄膜的横断面照片，该薄膜是实际应用所述PZT薄膜清洗方法制备的，其中照片是采用SEM(扫描电子显微镜)拍得的。
图3A和3B示出了图2A中的PZT薄膜在清洗前后的漏导电流的变化情况。
图4示出了当把根据本发明的PZT薄膜清洗方法应用到图1中的PZT薄膜时，极化强度的变化。
图5A至5C是横断面图，表示了根据本发明的PZT薄膜清洗方法的程序。
在下文，将参照附图，详细介绍一种根据本发明的清洗PZT薄膜的方法。
根据本发明，在这种清洗PZT薄膜的方法中，清洗是通过将PZT薄膜浸入包含下述溶液混合形成的浸蚀剂中，浸泡预定的时间后来实现的，(在下文，“清洗”是指浸蚀去除第二相晶体，比如无定形晶体、氧化铅或焦绿石相、或浸蚀破坏层等)，这里，混合制备浸蚀剂时，所用的溶液如下：
1.HF自身或通过向HF添加一种化合物制备的HF缓冲溶液(HF+NF4H，NF4H，NF2H3，和NF3H2)；
2.乙酸；和
3.醇
这些溶液是通过混合HF+乙酸或混合HF+乙酸+醇(或极性溶剂)而制备的。实际上，采用含HF的BOE(缓冲氧化物浸蚀剂)作为其主要成分，而并非HF自身的任一种混合，即“BOE+乙酸”或“BOE+乙酸+醇”，均能采用。在这些浸蚀剂的混合物中，HF是用来从PZT薄膜组分中去除Ti和Zr，乙酸是用来从其中去除Pb。作为醇类溶剂，甲醇、乙醇或丙醇均可使用，通过它们浸蚀速率可以大幅度降低。从而可以得到清洗而并非浸蚀的效果。此外，由于极性溶剂也可作为一种替代醇的稀释溶剂，可以从DMSO(二甲基亚砜)、DMF(N，N-二甲基甲酰胺)、二氧杂环己烷、THF(四氢呋喃)、NMP(N-甲基吡咯烷酮)、吡啶、CCI3H、CCIH3中选取至少一种使用。
基于氧化物的溶解度，参照CRC化学和物理手册(第71版，1990-1991，CRC出版社)，可知氧化铅在乙酸、硝酸、热碱等中是可溶的，ZrO2在氟酸、氯酸、硝酸、硫酸等中是可溶的，TiO2在硫酸、氟酸、碱等中是可溶的。所以，为了溶解PZT，将能够溶解其相应的各种金属氧化物的溶剂混合起来是必需的。基于这种事实，采用上述所有溶剂来清洗PZT薄膜，结果PZT薄膜在浸蚀剂的混合物中迅速溶解，或者与其发生反应，随即以盐的形式重结晶在PZT薄膜上。还发现为了溶解PZT，浸蚀剂中必须同时含有HF和乙酸。然而，在这种浸蚀剂中PZT的溶解速度太快，因而这种浸蚀剂在清洗中作为实用的浸蚀剂太困难。为了降低PZT溶解的速度，可以向其中添加水以降低浸蚀剂的浓度。然而，溶解速度仍然很快，以至于无法控制，并且表面形状遭到损坏。这里，一个显著的特征现象即PZT的浸蚀速率在很大程度上取决于HF的浓度。为了减小HF的活性，当HF与有机溶液乙酸混合，而不与水溶液混合时，可以得到适中、可控的浸蚀速度。然而，所用的HF浓度太小了。进而为了补偿少量HF，采用了HF+NH4F的缓冲氧化物浸蚀剂(BOE)。当乙酸和BOE(6.6％)的体积比为95∶5时，PZT(PbZr0.52Ti0.48O)的浸蚀速率约为80埃/分。因为浸蚀破坏层必须浸蚀至最多100埃厚，所以严格控制浸蚀速率是很重要的。当采用水作溶剂时，即当采用水/乙酸/BOE(6.6％)的混合物时，浸蚀率很大，即5000埃/分或略低。当采用甲醇作为溶剂，且甲醇、乙酸和BOE的体积比在85∶10∶5范围时，浸蚀率为80埃/分。当采用有机特性相对较强的乙醇，且乙醇、乙酸和BOE(6.6％)的体积比范围为85∶10∶5时，可以得到低的浸蚀率为25埃/分。所以可知乙醇、乙酸和BOE的混合是最适宜清洗用的。正如上面所介绍的，这种清洗PZT薄膜的方法可以应用于各种不同的铁电薄膜比如BST、ST、BT、SBT等等。
下面将介绍根据本发明的清洗PZT薄膜方法的实施方案。
<第一实施例>
当把其上混有第二相晶体及PZT的薄膜浸入到下述溶液4分钟，去除的浸蚀破坏层的厚度约为100埃，而去除的第二相晶体的厚度为200埃或更厚。
所用的混合浸蚀剂为：1、5mlBOE(HF6.6％)；2、10ml乙酸；3、85ml乙醇。
<第二实施例>
图2B为一个PZT电容器的横断面图，该电容器是在处理后、应用于铁电存贮器中的。为了得到如图2所示的PZT电容器，进行了干蚀处理。由此，由于干蚀的破坏，PZT结晶度已被破坏的浸蚀破坏层存在于PZT电容器的侧壁上，这会引起漏导电流，进而降低器件特性。将一经过干蚀处理的PZT电容器浸入乙醇、乙酸和BOE(6.6％)的混合溶液中，其中三者的比例为85∶10∶5，经过4分钟，可去除厚度约为100埃的干蚀破坏层。于是如图3A和3B所示，漏导电流与清洗前相比明显降低一个数量级或更多。
<第三个实施方案>
图2A所示的电容器结构，正如Chee Won Chung，June Key Lee等人在“集成铁电体”(1977，第16卷，139-147页)中所介绍的，对于高度集成是必需的。然而，在PZT薄膜的干蚀过程中，PZT薄膜容易被破坏，并且这种破坏不能仅通过高温下热处理恢复，相反当把破坏层浸入到乙醇、乙酸和BOE(6.6％)比例为85∶10∶5的混合溶液中，浸泡5分钟时，如图4所示，可以得到初始的铁电特性。
实验结果表明，制备PZT薄膜的清洗过程最好按照如图5A至5C所示的步骤进行。
首先，如图5A所示，PZT薄膜20沉积在下电极10上。于是厚度约为200-300埃的第二相晶体层遗留在PZT薄膜20的表面，把所得到的薄膜结构浸入到清洗用的混合溶液中，如上述实施方案所介绍的，该结构得到了清洁。然后，如图5B所示，薄膜表面仍残留厚度约为100埃的浸蚀破坏层。将浸蚀破坏层浸入到清洗用的混合溶液中，于是将得到如图5C所示的清洁PZT薄膜。再在所得PZT薄膜上沉积得到上电极，最后获得了铁电特性未受损伤的铁电电容器。
如上所述，在本发明中的PZT薄膜的清洗方法中，HF(或BOE)和乙酸的混合物，或HF(BOE)、乙酸和醇的混合物，用来作为浸蚀剂，从而降低了PZT薄膜的浸蚀速率，该浸蚀速率在很大程度上取决于HF的浓度，进而可以采用这种浸蚀剂把PZT薄膜浸蚀去掉一个较薄的厚度为100埃或更薄。所以，只有PZT薄膜表面上的第二相晶体或浸蚀破坏层能被去除，最终得到铁电特性不受损伤的PZT薄膜。

Claims (4)

1.一种采用浸蚀剂清洗PZT薄膜的方法，包括把PZT薄膜浸蚀到一种含HF和乙酸的浸蚀剂中，浸蚀PZT薄膜表面的步骤。
2.根据权利要求1的方法，其中通过往HF和乙酸的混合物中添加醇而得到的浸蚀剂的混合物被用来作为PZT薄膜的浸蚀剂。
3.根据权利要求2的方法，其中所述醇选自甲醇、乙醇和丙醇中至少之一。
4.根据权利要求2的方法，其中选自DMSO(二甲基亚砜)、DMF(N，N-二甲基甲酰胺)、二氧杂环己烷、THF(四氢呋喃)、NMP(N-甲基吡咯烷酮)、吡啶、CCI3H和CCIH3中至少之一的极性溶剂可以用来替代所述的醇。
CNB991102002A 1998-07-07 1999-07-07 清洗锆钛酸铅薄膜的方法 Expired - Fee Related CN1154546C (zh)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101328409A (zh) * 2007-06-22 2008-12-24 三星电子株式会社 氧化物类tft、锌氧化物类蚀刻剂及形成方法
CN101024882B (zh) * 2006-01-17 2010-05-26 三星电子株式会社 硅表面清洁溶液以及用其制造半导体器件的方法
CN102085522B (zh) * 2009-12-04 2014-05-14 中芯国际集成电路制造(上海)有限公司 用于清洗喷涂含硅的底部抗反射涂层的管路的方法
CN106890816A (zh) * 2015-12-21 2017-06-27 东莞新科技术研究开发有限公司 真空泵的清洗方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153095B2 (en) * 1999-03-29 2012-04-10 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride
KR100363092B1 (ko) * 2000-06-27 2002-12-05 삼성전자 주식회사 강유전체막의 손상층을 제거하기 위한 세정액 및 이를이용한 세정방법
US6457479B1 (en) * 2001-09-26 2002-10-01 Sharp Laboratories Of America, Inc. Method of metal oxide thin film cleaning
JP2003115576A (ja) * 2001-10-03 2003-04-18 Matsushita Electric Ind Co Ltd 電子デバイスの製造方法
US7018937B2 (en) * 2002-08-29 2006-03-28 Micron Technology, Inc. Compositions for removal of processing byproducts and method for using same
CN101583735B (zh) 2007-01-09 2012-08-22 株式会社爱发科 多层膜形成方法及装置
JP4665025B2 (ja) * 2008-12-16 2011-04-06 Ｔｄｋ株式会社 圧電素子の製造方法
CN112680732A (zh) * 2020-12-21 2021-04-20 江西遂川光速电子有限公司 一种精细线路刻蚀液

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1571438A (en) * 1977-03-15 1980-07-16 Colgate Palmolive Co Cleaning compositions
JPS57172738A (en) * 1981-04-17 1982-10-23 Hitachi Ltd Etching method of semiconductor element
US4759823A (en) * 1987-06-02 1988-07-26 Krysalis Corporation Method for patterning PLZT thin films
GB9210514D0 (en) * 1992-05-16 1992-07-01 Micro Image Technology Ltd Etching compositions
JPH06151872A (ja) * 1992-11-09 1994-05-31 Mitsubishi Kasei Corp Ｆｅｔ素子
US5258093A (en) * 1992-12-21 1993-11-02 Motorola, Inc. Procss for fabricating a ferroelectric capacitor in a semiconductor device
WO1994027315A1 (en) * 1993-05-13 1994-11-24 Interuniversitair Microelektronica Centrum Method for semiconductor processing using mixtures of hf and carboxylic acid
JPH06333912A (ja) * 1993-05-26 1994-12-02 Asahi Glass Co Ltd フッ酸系エッチング液
JPH07263429A (ja) * 1994-03-17 1995-10-13 Matsushita Electron Corp 選択エッチング液
TW332322B (en) * 1994-03-31 1998-05-21 Furontec Kk Manufacturing method for etchant and electronic element of conductive semiconductor
JP3201251B2 (ja) * 1996-03-18 2001-08-20 松下電器産業株式会社 誘電体素子の製造方法
KR19980060594A (ko) * 1996-12-31 1998-10-07 김영환 실리콘 웨이퍼 표면처리 방법
US5976928A (en) * 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101024882B (zh) * 2006-01-17 2010-05-26 三星电子株式会社 硅表面清洁溶液以及用其制造半导体器件的方法
CN101328409A (zh) * 2007-06-22 2008-12-24 三星电子株式会社 氧化物类tft、锌氧化物类蚀刻剂及形成方法
CN102085522B (zh) * 2009-12-04 2014-05-14 中芯国际集成电路制造(上海)有限公司 用于清洗喷涂含硅的底部抗反射涂层的管路的方法
CN106890816A (zh) * 2015-12-21 2017-06-27 东莞新科技术研究开发有限公司 真空泵的清洗方法

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