CN1231761A - 具有自对准的非集成电容器排布的存储器装置 - Google Patents
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Abstract
存储器装置,由一种电容器排布(4)和一种晶体管排布(2)构成,它们可以以自对准的方式被接合在一起,这样就使得在所有情况下的晶体管排布(2)的一个晶体管(8)的一个第一接触(10)被连接到在所有情况下的电容器排布(4)的一个存储器电容器(15)的一个第二接触(12)。为了对准这两种排布(2,4),第二接触(12)被设计成一种凸起形状,并且当接合发生时,它们啮合在一种带有抬高部分(20)的结构里面。
Description
本发明涉及一种存储器装置,这种装置有如下特征:
-具有大量晶体管的一种晶体管排布,这些晶体管每一个都通过一个第一接触被连接;
-具有大量电容器的一种电容器排布,这些电容器每一个都有一个第一电极和一个第二电极,一种存储器介质被固定在两个电极之间,第一电极有一个第二接触;
-晶体管排布和电容器排布以这样一种方式被接合起来,即晶体管排布的一个第一主表面和电容器排布的一个第二主表面彼此相对被安置,其中每次一个第一接触被每次连接到一个第二接触;
-第二接触被设计为凸出于第二主表面。
当铁电体材料是被用来作为存储器介质时,大多采用这样的存储器装置,即在它里面晶体管排布和电容器排布相互分开被制造并在而后被接合起来,因为适合于作为存储器介质的多种铁电体材料很难插入制造晶体管排布的制造工艺过程中。
一种已知的存储器装置以这样的方式被形成,即在存储器装置中晶体管排布和电容器排布相互分开来被制造,在晶体管排布和电容器排布被接合起来之前,晶体管排布的第一接触和电容器排布的第二接触两者都被设计成为一种凸起的形状。当以这样的方式所形成的晶体管排布和电容器排布被接合起来的时候,必须确保,每次一个第一接触被每次连接到一个第二接触,两种接触在一个短时间热处理工艺步骤中被熔合并产生一种永久的导电连接。
对于这种存储器装置在热处理步骤之前要确定第一接触和第二接触是否相互连接在一起的检查工作只能间接地来完成,例如借助于在这种排布边沿上的记号来完成。因为这种方法带来许多偏差,在一定的情况下需要提供第一接触和第二接触的接触表面具有比对于一种导电连接所需要的表面更大的表面。
本发明的目的是发展开头所提到的存储器装置,以这样一种方式,即当晶体管排布和电容器排布被接合起来时,一个相应的第一接触到一个相应的第二接触的连接可以以一种简单的方式被确保,尤其是因此上述所提到的对准问题不再存在。
通过下述附加的特征,对于开头所提到的存储器装置来说这一目的被达到了:
-一种带有抬高部分的结构被配置在第一主表面内,被设计成为一种凸起形状的第二接触啮合在抬高部分之间。
在所描述的存储器装置中,在接合操作期间,可能以一种简单的方式方法去对准晶体管排布和电容器排布,即各第一接触都会静止在相应的一个第二接触上面,使得在一种热处理步骤中两种接触可以相互导电地连接起来,于是各晶体管之一都以一种电学上导电的形式被连接到相应的电容器之一上。两种排布的对准通过第二接触在抬高部分之间的啮合来完成,第二接触是以一种凸起形状被设计的,而抬高部分是在第一接触之间被形成的。这种对准直接发生,并且不需要在晶体管排布和电容器排布边沿上的记号。由于更精确的对准,这对于所描述的存储器装置是可能的,就可能使凸起接触具有比以前已知的这种类型的存储器装置的情况下更小的尺寸,并且依然可能确保第一接触和第二接触之间形成充分的接触。
本发明的更进一步发展是从属权利要求的内容。
在前面的描述中,假设在第二主表面中的电容器排布的第二接触被设计成为一种凸起形状,并且假设,当晶体管排布和电容器排布被接合起来时,第二接触啮合在抬高部分之间,抬高部分被配置在晶体管排布的第一主表面中的第一接触之间。由于在电容器排布上的第二接触的凸起设计和在晶体管排布上的一种对应的带有抬高部分的结构的存在,仅对晶体管排布的晶体管与电容器排布的电容器之间建立接触是重要的,那末很清楚,晶体管排布的第一接触也可以被设计成一种凸起形状,而带有抬高部分的结构可以被附加到电容器排布上,因此,在接合工序期间,晶体管排布的凸起的第一接触啮合在电容器排布中的抬高部分之间,这些抬高部分被形成在第二接触之间。在本发明的一个第二实施例中,为此提出以凸起形状设计晶体管排布的第一接触,而在电容器排布上提供一种带有抬高部分的结构,在接合操作期间第一接触啮合在抬高部分之间,作为其啮合的一个结果,晶体管排布的每次一个第一接触都可以被连接到电容器排布的每次一个第二接触。
下边所描述的实施例既适用于被设计成为一个凸起形状的第二接触并有一种被配置在晶体管排布上且带有抬高部分的结构,也适用于被设计成为一种凸起形状的第一接触并有一种被配置在电容器排布上且带有抬高部分的结构。下面的实施例总是与已经提到的两个实施例有关系,在下面术语“凸起接触”与被设计成为一种凸起形状的第二接触同义地被使用,其中假设带有抬高部分的结构位于晶体管排布上,以及与被设计成一种凸起形状的第一接触同义地被使用,其中假设带有抬高部分的结构位于电容器排布上。同样,术语“对应的接触”与第一接触同义地被使用,此时第二接触被设计为一种凸起形状,以及与第二接触同义地被使用,此时,第一接触被设计成为一种凸起形状。
依据本发明的存储器装置的一个实施例,提供由一个绝缘层构成的带有抬高部分的结构,绝缘层有切口。这些切口以这样一种方式被选定尺寸,即凸起接触可以啮合在它们之间并可以被连接到对应的接触,对应的接触位于切口区域内。更可取的是,在切口的边沿处的绝缘层所形成的边棱被倒圆,以便确保凸起接触可以更容易地啮合到切口里面。
本发明的一个实施例提供的切口是矩形设计的,最好是正方形设计的,而一种更进一步的实施例提供的切口是园形设计的。
在本发明的一种更进一步的实施例中,把带有抬高部分的结构形成为一个挨一个的环形抬高部分。用这样一种设计,每第二个对应的接触被固定在一个环形抬高部分之一内,而相应的另一个对应的接触则由若干环形抬高部分围绕着,最好由四个环形抬高部分围绕着。为了确保凸起接触在环形抬高部分之间的简单啮合,环形抬高部分最好是半球形的,特别是其截面为半圆形的。
因为,在电容器排布与晶体管排布接合在一起之后,凸起接触可以支承在带有抬高部分的结构上,必须防止一种情况的出现,那就是在任何情况下两个接触可能通过抬高部分而在电学上被连接起来。带有抬高部分的结构因此是由一种电学上绝缘的材料构成的。本发明的一个实施例使该结构用玻璃制成的抬高部分来形成。
所描述的存储器装置被应用,特别是当铁电体被用作存储器介质时。本发明的一个实施例使用铁电体作为在电容器排布的电容器中的存储器介质。适合这种类型的材料是例如氧化物介质,诸如PZT(Pb,Zr)TiO3,BST(Ba,Sr)TiO3,ST SrTiO3或者SBTN SrBi2(Ta1-xNbx)2O9,其中分子式(Pb,Zr)TiO3和(Ba,Sr)TiO3分别表示PbxZr1-xTiO3和BaxSr1-xTiO3。
本发明的一个更进一步的实施例使用这类氧化物介质作为存储器介质。因为这种物质的铁电体性质是依赖于温度的,并且上述材料在一个特定温度以上有顺电体性质,因此也采用顺电体性质的存储器介质,介电常数大于10,最好大于100。
下面参照附图和实施例对本发明进行更详细地说明,其中:
图1以截面图形式给出了依据本发明的一种存储器装置的一个第一实施例;
图2以截面图形式给出了依据本发明的一种存储器装置的一个第二实施例;
图3以一个晶体管排布的平面图和一个电容器排布的平面图的形式给出了依据本发明的一种存储器装置的一个更进一步的实施例;
图4以平面图形式给出了一种晶体管排布的一个实施例,以及
图5以平面图形式给出了一种晶体管排布的一个更进一步的实施例。
在附图中,除非另有说明,相同的参照符号用同样的意思表示相同的部件。
图1以截面图形式给出了依据本发明的一种存储器装置1的一个第一实施例,图1a用图说明了在被接合在一起之前的一种晶体管排布2和一种电容器排布4,而图1b用图说明被接合以形成存储器装置1的该晶体管排布2和该电容器排布4。正如从图1可清楚看到的那样,晶体管排布2有大量晶体管8,它们的每一个都有一个第一接触10,其中每一个第一接触10的一个第一接触表面5被配置在晶体管排布2的第一主表面3内。此外,在晶体管排布2的第一主表面3内有一种带有抬高部分的结构20,在现在的实施例中,带有抬高部分的结构20作为半圆形截面的抬高部分被配置在第一接触表面5之间。
电容器排布4有大量电容器15,每一个电容器有一个第一电极14,一层存储器介质18和一个第二电极16,在现在的这个实施例中该第二电极16为若干电容器15所共有。第一电极14有一个第二接触12,在现在的实施例中,第二接触12被设计成隆起形的凸起形状。
正如从图1b中可以清楚地看到的那样,在晶体管排布2和电容器排布4被接合以后,被设计成凸起形状的第二接触12啮合在带有抬高部分的结构20里边,并且每次一个第二接触12被导电地连接到每次一个第一接触10。正如从图1b可以清楚地看出的那样,最好被设计成为一种凸起形状的第二接触12,通过一个热处理步骤被变形,这是为了使第一接触10和第二接触12相互熔合所必需的。为了防止构成第二接触12的导电材料在热处理步骤期间被压挤到相邻接触方向上,并因此在两个相邻的接触之间形成一种导电连接,在现在的实施例情况下,在电容器排布4的一个第二主表面11中提供了凹陷9,晶体管排布2的带有抬高部分的结构20啮合到凹陷9里面,使得两个相邻的第二接触12被可靠地彼此分开。
图2以图解方式说明了一种依据本发明的存储器装置的第二实施例,图2a以图解方式说明了在被接合起来之前的一个晶体管排布2和一个电容器排布4;而图2b以图解方式说明了晶体管排布2和电容器排布4被接合在一起形成了一个存储器装置1。在图解说明的实施例中,晶体管排布2的第一接触10被设计成一种凸起形状,而电容器排布4有一个带有抬高部分的结构20,存储器电容器15的第一电极14被配置在带有抬高部分的结构20之间。在图1中所描绘的并在那里被设计成为一种凸起形状的第二电极12,在现在的实施例中被省略掉;在这里,存储器电容器15的第一电极14构成了第一电极14同时也构成第二接触。图2b以图解方式说明了晶体管排布2和电容器排布4被接合在一起形成存储器装置1。在接合操作完成之后,被设计成一种凸起形状的第一接触10被连接到存储器电容器15的第一电极14,并在接合操作期间通过热处理步骤被轻微地变形。
图3以一个电容器排布4和一个晶体管排布2的平面图形式说明依据本发明的一个存储器装置的实施例。以平面图表示出来的电容器排布4有第二接触12,第二接触12被设计成凸起形状并位于电容器排布4的第二主表面11内。所示出的电容器排布4对应着图1a中以截面图所示出的电容器排布4。在图3b中示出的晶体管排布有许多第一接触10,它们的第一接触表面5被配置在晶体管排布2的第一主表面3内。在所表示出的实施例中,位于晶体管排布2上并带有抬高部分的一种结构由一种绝缘层构成,该绝缘层有矩形切口22,第一接触表面5被配置在切口22内。如果在绝缘层切口边缘所产生的边棱被倒圆,那么沿图3b中所示出的A-A′线的剖面就产生出在图1a中所示出的截面图。
在图4中示出了晶体管排布的一个更进一步的实施例,晶体管排布有一种带有抬高部分的结构20。该带有抬高部分的结构20也由一种绝缘层构成,绝缘层有切口22,该切口22在现在的这个实施例中是圆形设计的。第一接触的第一接触表面5位于绝缘层的切口22内。如果在切口22的边缘所产生的绝缘层边棱被倒圆,那么沿图4中所示出的B-B′线的剖面就产生出在图1a中所示出的对晶体管排布2的截面图。把边棱倒圆是恰当的,以便使得第二接触12更容易进到切口22里边,第二接触12被设计成一种凸起形状。
晶体管排布的一个更进一步的实施例在图5中以平面图的形式被示出。在现在的实施例的情况下,一种带有抬高部分的结构20由若干一个挨一个被配置的环形抬高部分构成。第一接触10的每第二个第一接触表面5位于一个环形抬高部分里边,而另外的第一接触表面5则都被各四个环形抬高部分24所围绕着。给定一种有半球形的,最好是半圆形截面的环形抬高部分24的设计,沿图5中示出的C-C′线的剖面就产生出在图1a中以截面图给出的晶体管排布。
要指出的是,在图3b,图4和图5中所示出的带有抬高部分的结构不是必须被配置在晶体管排布上,而是它们也可以被配置在电容器排布上,如果晶体管排布的第一接触被设计成一种凸起形状的话。同样地,给定一种第一接触或者第二接触的凸起设计,不是必须用对应的另一个接触表面做成一个平面,而是位于带有抬高部分的结构之间的接触表面,也可以被设计成一种凸起形状,只是所提供的接触表面的高度不超过带有抬高部分的结构的抬高部分。
参照数字表1存储器装置2晶体管排布3第一主表面4电容器排布5第一接触表面8晶体管9凹陷10第一接触11第二主表面12第二接触14第一电极15电容器16第二电极18存储器介质20带有抬高部分的结构22切口24环形抬高部分
Claims (12)
1.存储器装置,它具有下列特征:
1.1.具有大量晶体管(8)的一种晶体管排布(2),这些晶体管的每一个都通过一个第一接触(10)被连接;
1.2.具有大量电容器(15)的一种电容器排布(4),这些电容器的每一个都有一个第一电极(14)和一个第二电极(16),在两个电极之间有一层存储器介质(18),第一电极(14)有一个第二接触(12);
1.3.晶体管排布(2)和电容器排布(4)以这样一种方式被接合起来,即晶体管排布(2)的一个第一主表面(3)和电容器排布(4)的一个第二主表面(11)彼此相对被配置起来,在所有情况下的一个第一接触(10)被连接到在所有情况下的一个第二接触(12);
1.4.第二接触(12)被设计为凸出于第二主表面(11);更进一步,其特征为:
1.5.一种带有抬高部分的结构(20)被配置在第一主表面内,被设计成一种凸起形状的第二接触(12)啮合在抬高部分之间。
2.存储器装置,它具有下列特征:
2.1.具有大量晶体管(8)的一种晶体管排布(2),这些晶体管的每一个都通过一个第一接触(10)被连接;
2.2.具有大量电容器(15)的一种电容器排布(4),这些电容器的每一个都有一个第一电极(14)和一个第二电极(16),在两个电极之间有一层存储器介质(18),第一电极(14)有一个第二接触(12);
2.3.晶体管排布(2)和电容器排布(4)以这样一种方式被接合起来,即晶体管排布(2)的一个第一主表面(3)和电容器排布(4)的一个第二主表面(11)彼此相对被配置起来,在所有情况下的一个第一接触(10)被连接到在所有情况下的一个第二接触(12);
2.4.第一接触(10)被设计为凸出于第一主表面(3);更进一步,其特征为:
2.5.一种带有抬高部分的结构(20)被配置在第二主表面(11)内,被设计成一种凸起形状的第一接触(10)啮合在抬高部分之间。
3.依据权利要求1或2之一的存储器装置,其特征为,带有抬高部分的结构(20)由一种绝缘层构成,绝缘层有切口(22)。
4.依据权利要求3的存储器装置,其特征为,切口(22)是圆形设计的。
5.依据权利要求3的存储器装置,其特征为,切口(22)是矩形设计的,特别是以正方形设计的。
6.依据权利要求1或2之一的存储器装置,其特征为,带有抬高部分的结构(20)由一个挨一个被配置的环形抬高部分构成。
7.依据上述权利要求之一的存储器装置,其特征为,带有抬高部分的结构(20)由绝缘材料构成。
8.依据权利要求7的存储器装置,其特征为,绝缘材料是玻璃。
9.依据上述的权利要求之一的存储器装置,其特征为,存储器介质(18)是一种铁电体。
10.依据上述的权利要求之一的存储器装置,其特征为,存储器介质(18)有一个大于10的介电常数。
11.依据权利要求9或10之一的存储器装置,其特征为,存储器介质(18)是一种氧化物介质。
12.依据权利要求11的存储器装置,其特征为,存储器介质(18)是PZT(Pb,Zr)TiO3,BST(Ba,Sr)TiO3,ST SrTiO3或者SBTN SrBi2(Ta1-xNbx)2O9。
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EP (1) | EP0931337A1 (zh) |
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CN (1) | CN1158700C (zh) |
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KR100778227B1 (ko) | 2006-08-23 | 2007-11-20 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조방법 |
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US5335138A (en) * | 1993-02-12 | 1994-08-02 | Micron Semiconductor, Inc. | High dielectric constant capacitor and method of manufacture |
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CN1158700C (zh) | 2004-07-21 |
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KR20000048721A (ko) | 2000-07-25 |
TW369695B (en) | 1999-09-11 |
DE19640213C1 (de) | 1998-03-05 |
US6097050A (en) | 2000-08-01 |
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