CN1231102C - 印刷板和其形成方法 - Google Patents
印刷板和其形成方法 Download PDFInfo
- Publication number
- CN1231102C CN1231102C CNB028003888A CN02800388A CN1231102C CN 1231102 C CN1231102 C CN 1231102C CN B028003888 A CNB028003888 A CN B028003888A CN 02800388 A CN02800388 A CN 02800388A CN 1231102 C CN1231102 C CN 1231102C
- Authority
- CN
- China
- Prior art keywords
- layer
- pattern
- printed panel
- substrate
- pattern definition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007639 printing Methods 0.000 title abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 2
- 230000001154 acute effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000002520 cambial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 108010025899 gelatin film Proteins 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 230000000266 injurious effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/207—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a prefabricated paste pattern, ink pattern or powder pattern
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/02—Engraving; Heads therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41N—PRINTING PLATES OR FOILS; MATERIALS FOR SURFACES USED IN PRINTING MACHINES FOR PRINTING, INKING, DAMPING, OR THE LIKE; PREPARING SUCH SURFACES FOR USE AND CONSERVING THEM
- B41N1/00—Printing plates or foils; Materials therefor
- B41N1/12—Printing plates or foils; Materials therefor non-metallic other than stone, e.g. printing plates or foils comprising inorganic materials in an organic matrix
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41N—PRINTING PLATES OR FOILS; MATERIALS FOR SURFACES USED IN PRINTING MACHINES FOR PRINTING, INKING, DAMPING, OR THE LIKE; PREPARING SUCH SURFACES FOR USE AND CONSERVING THEM
- B41N3/00—Preparing for use and conserving printing surfaces
- B41N3/003—Preparing for use and conserving printing surfaces of intaglio formes, e.g. application of a wear-resistant coating, such as chrome, on the already-engraved plate or cylinder; Preparing for reuse, e.g. removing of the Ballard shell; Correction of the engraving
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/06—Thermal details
- H05K2201/068—Thermal details wherein the coefficient of thermal expansion is important
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/0113—Female die used for patterning or transferring, e.g. temporary substrate having recessed pattern
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Printing Plates And Materials Therefor (AREA)
- Liquid Crystal (AREA)
- Printing Methods (AREA)
Abstract
一种用来在衬底上制出电子线路的印刷板。该板包括一个本体层(12)和一个在本体层上的非金属图样形成层(14),在其外表面内各向异性地蚀刻有印刷图样。本体层(12)的材料可被选择使其热膨胀性能基本上与衬底匹配,而图样形成层的材料可就其蚀刻特性而被选择。
Description
技术领域
本发明涉及印刷板,更具体点说,涉及用来制造电子线路的板。
背景技术
在传统的半导体器件制造过程中,金属片、半导体、介电质和其他材料被均匀地沉积在衬底上。然后用湿法或干法蚀刻将每一层制成图样,典型地使用照相制版形成的光阻层作为掩膜。这种工艺过程复杂,生产率较低。
印刷技术能使材料按照所需图样直接沉积在衬底上,从而提供一个高得多的衬底生产率。一种这样的技术采用雕刻的或凹雕的印刷板,要被印刷的图样沉陷在其表面内。
现有的用来在纸张上印刷图像或文本的凹版通常由一个金属块或聚合物板装在金属片上制成的。但使用由这些材料制成的凹版来制造电子线路可能会发生问题。金属板在使用时较能抗磨损,但当印刷电子线路所需尺度如线宽要在20μm以下的精细零件时,金属的晶粒结构会在印刷质量上产生有害的影响。聚合物板不会产生这种晶粒结构,但其抗磨损性差。
当印刷精细零件时另一个要考虑的问题是印刷板和衬底的相对的膨胀性能。如果两者不是足够紧密地配合,那么温度的波动可造成印刷在衬底上的各不同层之间的不对准。例如,要在玻璃衬底上印刷线路以便制造主动矩阵液晶线路(AMLCD)时,但金属板在热膨胀性能上与玻璃衬底截然不同。聚合物可能较好地配合,但这方面的差异仍可有显著的影响。由与衬底相同的玻璃制成的印刷板虽然是理想的配合,但要形成和蚀刻出分辨率足够高的细部却是不切合实际的,因为这种玻璃如用干法蚀刻,速率太慢,而用湿法蚀刻由于其各向同性的性质会使细部的最小尺寸受到限制。
发明内容
本发明提供一种印刷板,可用来在衬底上制造出电子线路,该印刷板包括一个本体层和一个在本体层上面的非金属的图样形成层,而图样形成层具有各向异性地蚀刻在其外表面的印刷图样,该印刷图样与在衬底上制出的电子线路相应,即相同或互补。
因此可选择用来制造本体层也就是印刷板大块的材料使在热膨胀性能上与衬底足够准确地匹配,而制造图样形成层的材料则可根据其蚀刻性能来选择。其时热膨胀性能的足够准确地匹配是指在印刷过程中印刷板和衬底所经受的温度范围内,两个材料具有基本相同的热膨胀性能,它们之间的配合相当紧密以致任何一个相对的膨胀在该温度范围内对被印刷图样的对准只能有可忽略不计的影响。
使用各向异性的蚀刻能使形成的图样具有较陡的侧壁从而使精密的细部能被印刷出来。在板的法线和图样侧壁上部之间的角度(被称为脱开表面角)适宜约为25°或更小。对于特别精细的图样,该角度适宜在10°左右或更小。
图样形成层可具有从下列各项中选出的材料:聚酰亚胺、二氧化硅、氮化硅、和溶胶-凝胶法制备的材料。该板在图样形成层之上还可包括一层比图样成形层更能抗拒磨损的耐磨层。
在一优选实施例中,本体层由选用的基本上能与衬底的热膨胀性能匹配的材料制成,本体层可具有玻璃或石英。
本发明还提供一种形成印刷板的方法,该板可用来在衬底上制出电子线路,该方法包括:提供一个本体层,将一个添加的非金属层沉积在本体层上,在图样形成层之上提供一个掩膜层,然后在图样形成层的外表面各向异性地蚀刻出一个印刷图样,该印刷图样与在衬底上制出的电子线路相应。
提供掩膜层的步骤最好包括将一金属层沉积在图样形成层之上然后在该金属层上制出图样的步骤。
本发明另外还提供一种使用上述形式的印刷板在衬底上制出电子线路的方法,其中板的本体层是由热膨胀特性基本上与衬底相同的材料制成。最好本体层由与衬底相同的材料制成。
现在结合附图举例说明本发明的实施例,其中:
附图说明
图1A和1B示出传统的凹版胶印过程中的两个阶段;
图2示出在印刷板的表面被蚀刻之前通过该板的部分剖面图,这是实施本发明的板的制造中的一个中间阶段;
图3示出图2的印刷板在被蚀刻后通过该板的部分剖面图;
图4示出通过一个包括耐磨层的印刷板的部分剖面图。
具体实施方式
应该注意到附图是概略的,并不按照比例画出。这些图中零件的相对尺寸和比例有的被放大,有的被缩小,只是为了清晰和作图的方便。
图1A和1B示出已知凹版胶印过程的两个阶段。要被印刷的图样被蚀刻在印刷板2的表面内如图1A所示。然后将油墨4供应到图样的凹部6内。上过油墨的板相对于转移滚筒8而被移动使该滚筒在板上滚过并检取油墨的图样。然后使滚筒在衬底10上滚过(见图1B),便可将图样转移到衬底10上。作为这种凹版胶印工艺的替代,可将板直接施加在衬底上而将油墨从板转移到衬底上。
这种技术可被用在制造电子线路上,特别是用来制造大面积的电子器件如AMLCD。使用印刷方法沉积的材料典型地或者是电阻材料或者是先驱材料。电阻材料的图样可被印刷在毯状沉积层上作为随后的蚀刻步骤中的掩膜。先驱材料能被进一步加工使它转变为具有所需性能的电子材料。这种印刷工艺方法与传统的工艺技术相比,由于能提供较高的生产率、减少资本费用和降低材料费用,因而在器件生产中能导致费用的降低。但正如上面所述,现有的凹版印刷板只能提供有限的分辨率水平和对准准确度。
图2示出本发明的印刷板在制造的中间阶段的情况。它包括一个本体层12、一个在其上添加的非金属图样形成层14、一个在图样形成层之上的金属层16、和一个在最上面的阻光层18。一旦这些层都被沉积,阻光层18被制成具有图样,然后金属层16被蚀刻出来形成一个原处的掩膜,用作蚀刻该图样形成层14,如图2所示。金属层和图样形成层在同一过程内进行蚀刻也许是有利的,这样可不需将真空中断。
如上所述,构成本体层12的材料可这样选择使其热膨胀性能密切地与要被印刷的衬底匹配。在AMLCD的领域内,衬底例如可由玻璃或柔韧的聚合物构成。因为图样形成层14较薄,本体层12构成印刷板的大部分,因此本体层基本上可确定印刷板的热膨胀性能。
图样形成层14由适宜用各向异性的蚀刻方法蚀刻的坚硬而耐刮伤的材料制成,它可具有从下列各项选出的材料:聚酰亚胺、二氧化硅、氮化硅、和溶胶凝胶法制备的材料。二氧化硅层或氮化硅层可喷镀在板上。聚合物典型地可离心浇铸在其上或者是被印刷的片。合适的溶胶凝胶材料例如甲基·三甲氧基硅(MeTMS)的基体充有直径为20nm的二氧化硅微粒和单铝磷酸盐层充有二氧化钛和氮化钛的微粒。
各向异性蚀刻法与各向同性技术如传统的湿法蚀刻相比可制出侧壁较陡的细部。因此干法蚀刻如反应离子蚀刻、喷镀或等离子蚀刻是合用的。例如氧气单独、或氧气和CHF3或CF4的混合物或两者可被用来反应离子蚀刻聚酰亚胺、二氧化硅和氮化硅而得到形成足够好的结果。将大约5%的CHF3或CF4添加到氧内曾被发现有助于控制侧壁的陡度。
图2中的印刷板在蚀刻后的放大的部分剖面图如图3所示,从图中可见在一槽20被蚀刻在图样形成层14的外表面内。为了印制电子线路,槽深22典型地可为10到30μm左右,而宽度可为宽广的范围内变化,从10μm或更小到100μm或更大。
即使采用“各向异性”的蚀刻,在金属层下面的层14的材料仍会多少被向后蚀刻。这样就会造成侧壁26以一角度28向板平面的垂直线偏斜,而形成陡壁的能力使我们能够制出较小的细部。应该知道角28的大小取决于所选用来形成层14的材料和用来蚀刻的气体两者的组合。曾经发现25°或更小的角度能给出良好的效果。
金属层16典型地可用阴极真空喷镀或汽化沉积。电镀技术也可被使用。例如可用铝制出厚度30约为250nm的金属层。所选金属须不会显著地与蚀刻气体反应。层厚可变,取决于所用金属。曾经实际发生这样的情况,即在侧壁26之外延伸的那部分金属层如果足够薄,由于层14被向后蚀刻,在蚀刻过程中会向下折转在侧壁上,如图3中虚线32和34所示。在蚀刻步骤完毕后,光阻层18和金属层16的剩余部分被除去。金属层边缘部的折转可在邻近层14外表面的侧壁上造成一个比槽表面其余部分光滑的表面,这可有助于在印刷过程中印刷材料的从槽内的清洗脱出。
用来形成板的图样形成层的材料虽然具有所需的蚀刻性能,但对于特定的用途或大量生产,可能没有足够的抗刮伤和/或耐磨损的能力。在那种情况下,如图4所示,图样成形层14可在印刷图样被蚀刻在其表面内以后用一个由较能抗刮伤和/或耐磨损的材料制成的共形层36覆盖。当图样形成层14例如由聚合物制成时,合适的耐磨损层可以是氮化硅或二氧化硅。这些材料例如可用PECVD或喷镀沉积。耐磨损层的合适的厚度典型地可在0.25μm左右。
在阅读本公开内容后,显然本行业的行家能作出其他变更和修改。这些变更和修改可包括在印刷板和利用这些印刷板构成的电子线路的设计、制造和使用中已知的等同的和其他的特点,这些特点可被用来代替或增添本文已经说明的特点。
虽然在本申请中,就特定的特点组合系统地提出了权利要求书,但应知道,本发明公开的范围还包括本文所公开的任何新颖的特点或任何新颖的特点的组合,这些特点或是明白的或是隐含的或带一点概括性的,不管它们是否涉及现时在任一权利要求中请求保护的同一发明,也不管它们是否像本发明那样缓和任一或全部同一技术问题。在单独的实施例范围内说明的一些特点也可在单个实施例中形成组合。反之,为了简要起见,原来在单个实施例范围内说明的种种特点也可能被单独构成或形成任何适当的子组合。本申请人为此提请注意,在进行本申请或由其衍生的任何其它申请期间,有可能就这些特点和/或这些特点的组合系统地提出新的权利要求书。
Claims (8)
1.一种可用来在一个衬底上制出电子线路的印刷板,该印刷板具有一个本体层和一个在本体层之上的非金属的图样形成层,图样形成层具有各向异性地蚀刻在其外表面上的印刷图样,该印刷图样与在衬底上制出的电子线路相应。
2.权利要求1的印刷板,其特征在于在印刷板的法线和图样侧壁上部之间的锐角为25°或更小。
3.权利要求1或2的印刷板,其特征在于图样形成层具有从下列各项中选出的材料:聚酰亚胺、二氧化硅、氮化硅和溶胶-凝胶材料。
4.权利要求1或2的印刷板,其特征在于在其图样形成层之上包括一层比图样形成层更能抗磨的耐磨层。
5.权利要求1或2的印刷板,其特征在于本体层由与衬底的热膨胀性能匹配的材料制成。
6.一种形成印刷板的方法,该印刷板可用来在衬底上制出电子线路,该方法包括:
提供一个本体层,
将一个非金属的图样形成层沉积在本体层上,
在图样形成层之上提供一个掩膜层,
然后在图样形成层的外表面各向异性地蚀刻出一个印刷图样,该印刷图样与在衬底上制出的电子线路相应。
7.权利要求6的方法,其特征在于还包括:
在提供掩膜层的步骤之前将一金属层沉积在图样形成层之上的步骤;和
在该图样形成层的外表面上蚀刻出图样的步骤之前蚀刻所述金属层的步骤。
8.权利要求6的方法,其特征在于包括在蚀刻步骤后将一耐磨层沉积在图样形成层之上的步骤。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0104611.9A GB0104611D0 (en) | 2001-02-23 | 2001-02-23 | Printing plates |
GB0104611.9 | 2001-02-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1457627A CN1457627A (zh) | 2003-11-19 |
CN1231102C true CN1231102C (zh) | 2005-12-07 |
Family
ID=9909439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028003888A Expired - Fee Related CN1231102C (zh) | 2001-02-23 | 2002-02-13 | 印刷板和其形成方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6703313B2 (zh) |
EP (1) | EP1363776A2 (zh) |
JP (1) | JP2004518563A (zh) |
KR (1) | KR20020093927A (zh) |
CN (1) | CN1231102C (zh) |
GB (1) | GB0104611D0 (zh) |
TW (1) | TWI245595B (zh) |
WO (1) | WO2002066251A2 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200616523A (en) * | 2004-10-08 | 2006-05-16 | Matsushita Electric Ind Co Ltd | Multilayer circuit board manufacturing method |
KR100641006B1 (ko) * | 2004-11-04 | 2006-11-02 | 엘지.필립스 엘시디 주식회사 | 인쇄판 |
KR100716304B1 (ko) * | 2005-06-30 | 2007-05-08 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치용 인쇄판 및 그의 제조 방법 |
JPWO2007013333A1 (ja) * | 2005-07-25 | 2009-02-05 | 株式会社シンク・ラボラトリー | グラビア製版ロール及びその製造方法 |
KR101147079B1 (ko) | 2005-08-25 | 2012-05-17 | 엘지디스플레이 주식회사 | 인쇄판의 제조방법 |
JP4859921B2 (ja) * | 2006-05-16 | 2012-01-25 | 株式会社シンク・ラボラトリー | グラビア製版ロール及びその製造方法 |
WO2007135900A1 (ja) * | 2006-05-23 | 2007-11-29 | Think Laboratory Co., Ltd. | グラビア製版ロール及びその製造方法 |
TWI466779B (zh) * | 2006-12-27 | 2015-01-01 | Hitachi Chemical Co Ltd | Gravure and use of its substrate with a conductive layer pattern |
JP4967765B2 (ja) * | 2007-04-05 | 2012-07-04 | 日立化成工業株式会社 | 凹版及びその製造方法 |
CN101835612B (zh) * | 2007-08-20 | 2013-01-02 | 摩尔·华莱士北美公司 | 喷墨印刷的方法及装置 |
KR101477299B1 (ko) * | 2008-06-03 | 2014-12-29 | 동우 화인켐 주식회사 | 그라비아 오프셋 인쇄장치용 요판 및 이의 제조방법 |
RU2494202C2 (ru) * | 2009-03-31 | 2013-09-27 | Андрей Виленович Любомирский | Облицовочная панель (варианты) |
JP2014130267A (ja) * | 2012-12-28 | 2014-07-10 | Think Laboratory Co Ltd | グラビアシリンダー及びその製造方法 |
CN116080252A (zh) * | 2023-02-02 | 2023-05-09 | 苏州蓝昇精密制版科技有限公司 | 一种网版及网版制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3181461A (en) * | 1963-05-23 | 1965-05-04 | Howard A Fromson | Photographic plate |
US4542089A (en) * | 1981-09-08 | 1985-09-17 | Minnesota Mining And Manufacturing Company | Lithographic substrate and its process of manufacture |
CA1260754A (en) * | 1983-12-26 | 1989-09-26 | Teiji Majima | Method for forming patterns and apparatus used for carrying out the same |
JPS6391245A (ja) * | 1986-10-06 | 1988-04-21 | Toppan Printing Co Ltd | グラビア製版方法 |
US4707218A (en) * | 1986-10-28 | 1987-11-17 | International Business Machines Corporation | Lithographic image size reduction |
GB2198085B (en) * | 1986-11-29 | 1991-02-13 | Stc Plc | Printing apparatus and process |
US5221562A (en) * | 1989-05-02 | 1993-06-22 | Praxair S.T. Technology, Inc. | Liquid transfer articles and method for producing them |
JP2867464B2 (ja) | 1989-09-20 | 1999-03-08 | 凸版印刷株式会社 | 印刷用版 |
WO1992001973A2 (en) * | 1990-07-20 | 1992-02-06 | Mcgrew Stephen P | Embossing tool |
JPH04186229A (ja) | 1990-11-20 | 1992-07-03 | Matsushita Electric Ind Co Ltd | 補助電極付透明電極およびその製造方法 |
US5201268A (en) * | 1990-12-25 | 1993-04-13 | Matsushita Electric Industrial Co., Ltd. | Intaglio printing process and its application |
JPH04332694A (ja) | 1991-05-08 | 1992-11-19 | Matsushita Electric Ind Co Ltd | 凹版およびその製造方法 |
JP2502852B2 (ja) | 1991-09-02 | 1996-05-29 | 松下電器産業株式会社 | 凹版およびその製造方法 |
US5352634A (en) | 1992-03-23 | 1994-10-04 | Brody Thomas P | Process for fabricating an active matrix circuit |
JPH05323111A (ja) | 1992-05-18 | 1993-12-07 | Toshiba Corp | カラ−フィルタの製造方法 |
JPH0671853A (ja) * | 1992-08-25 | 1994-03-15 | Dainippon Printing Co Ltd | 微細パターンの形成方法 |
US6136508A (en) * | 1997-03-13 | 2000-10-24 | Kodak Polychrome Graphics Llc | Lithographic printing plates with a sol-gel layer |
-
2001
- 2001-02-23 GB GBGB0104611.9A patent/GB0104611D0/en not_active Ceased
-
2002
- 2002-01-24 US US10/056,098 patent/US6703313B2/en not_active Expired - Fee Related
- 2002-02-13 CN CNB028003888A patent/CN1231102C/zh not_active Expired - Fee Related
- 2002-02-13 KR KR1020027014003A patent/KR20020093927A/ko not_active Application Discontinuation
- 2002-02-13 WO PCT/IB2002/000441 patent/WO2002066251A2/en not_active Application Discontinuation
- 2002-02-13 JP JP2002565790A patent/JP2004518563A/ja active Pending
- 2002-02-13 EP EP02710271A patent/EP1363776A2/en not_active Withdrawn
- 2002-02-20 TW TW091103062A patent/TWI245595B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2002066251A2 (en) | 2002-08-29 |
WO2002066251A3 (en) | 2002-12-05 |
KR20020093927A (ko) | 2002-12-16 |
CN1457627A (zh) | 2003-11-19 |
EP1363776A2 (en) | 2003-11-26 |
JP2004518563A (ja) | 2004-06-24 |
GB0104611D0 (en) | 2001-04-11 |
US20020119665A1 (en) | 2002-08-29 |
US6703313B2 (en) | 2004-03-09 |
TWI245595B (en) | 2005-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1231102C (zh) | 印刷板和其形成方法 | |
US7538040B2 (en) | Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers | |
JP4057137B2 (ja) | 抄紙機/板紙抄紙機用プレスロール、その製造方法、およびコーティング組成 | |
CN100515794C (zh) | 印版及其制造方法 | |
CA2160501A1 (en) | Laminar Stackable Circuit Board Structure and Manufacture | |
CN108155196B (zh) | 一种阵列基板及其制备方法 | |
JP2001328398A (ja) | 水圧転写シート及びその製造方法 | |
WO2012133932A4 (en) | Method for forming resist patterns and method for producing patterend substrates employing the resist patterns | |
US20130344300A1 (en) | Cliche for offset-printing and method for manufacturing same | |
JPH08316091A (ja) | 積層電子部品の製造方法 | |
US20090050007A1 (en) | Intaglio plate and method for fabricating the same | |
CN1268922A (zh) | 在表面上形成硅层的方法 | |
US5328554A (en) | Fabrication process for narrow groove | |
US20050028728A1 (en) | Method for fabricating a diamond film having low surface roughness | |
CN1169672C (zh) | 阶段式蚀刻方法 | |
US11024510B2 (en) | Pattern forming method and method of manufacturing semiconductor device | |
EP1620604B1 (en) | Method for producing coated paper with pearlescent effect | |
JP4475917B2 (ja) | 電子部品用セラミック基板 | |
KR101727167B1 (ko) | 금속인쇄플레이트 및 그 제조방법 | |
JP2024137451A (ja) | 積層体、インプリントモールド、インプリントモールドの製造方法、光学素子の製造方法、および電子部品の製造方法 | |
WO2003001521A3 (fr) | Procede de fabrication d'une matrice de disques optiques | |
JPH0786243A (ja) | 微細パターン形成方法 | |
JP2003161852A (ja) | 誘電体導波路の製造方法 | |
Cha | Development of the Large-area Au/Pd Transfer-printing Process Applying Both the Anti-Adhesion and Adhesion Layers | |
IT1272483B (it) | Sistema per la fabbricazione di parti brillanti di alluminio |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |