CN1218365C - Absolute-dry-method deep-etching micro-mechanical processing method based on silocon-silicon linkage - Google Patents
Absolute-dry-method deep-etching micro-mechanical processing method based on silocon-silicon linkage Download PDFInfo
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- CN1218365C CN1218365C CN 03143281 CN03143281A CN1218365C CN 1218365 C CN1218365 C CN 1218365C CN 03143281 CN03143281 CN 03143281 CN 03143281 A CN03143281 A CN 03143281A CN 1218365 C CN1218365 C CN 1218365C
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- monocrystalline silicon
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000005530 etching Methods 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title abstract description 18
- 239000010703 silicon Substances 0.000 title abstract description 18
- 238000003672 processing method Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 238000005516 engineering process Methods 0.000 claims abstract description 35
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 19
- 238000001259 photo etching Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims abstract description 5
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 53
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 229910008045 Si-Si Inorganic materials 0.000 claims description 11
- 229910006411 Si—Si Inorganic materials 0.000 claims description 11
- 238000005459 micromachining Methods 0.000 claims description 11
- 238000001459 lithography Methods 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 210000003811 finger Anatomy 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000009738 saturating Methods 0.000 claims description 4
- 210000003813 thumb Anatomy 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 238000012545 processing Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000004377 microelectronic Methods 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000000708 deep reactive-ion etching Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 108091092878 Microsatellite Proteins 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000036244 malformation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000004874 x-ray synchrotron radiation Methods 0.000 description 1
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Abstract
The present invention discloses a deep etching micro mechanical processing method based on a completely dry method of silocon-silicon bonding, which relates to the manufacture of a mechanical system structure device of microelectronics in the field of the processing technology of microelectronics mechanical technology. A silicon chip with low resistance and a substrate silicon chip with an oxidation insulating layer are bonded to integration, and a micro mechanical structure is prepared on the silicon chip with low resistance. The present invention adopts the technology, such as silicon-silicon bonding, dual-surface photoetching, deep reactive ion etching, etc., and the micro mechanical structure of monocrystal silicon with low resistance is prepared on a silicon dioxide layer of the silicon substrate. The prepared micro mechanical tube core is composed of a silicon oxide insulating layer with low resistance silicon and three layers of materials of substrate silicon. The present invention has the advantages that a micro mechanical movable structure layer in the tube core has large thickness and low stress, and the thermal expansion coefficient of the substrate has excellent match. The present invention has the advantages of low manufacture cost, high finished product rate, etc., and the prepared device has high reliability. The present invention is suitable for manufacturing various silicon micro mechanical devices, such as a micro accelerometer, an optical switch, a micro mechanical switch, a variable capacitor, a variable optical attenuator, etc.
Description
Technical field
The present invention relates to a kind of absolutely dry method deep-etching micro machining process in the microelectromechanical systems processing technique field, be specially adapted to multiple making with low stress, movable microelectron mechanical structure device that longitudinal size is big based on Si-Si bonding.
Background technology
Microelectromechanical systems claims MEMS again, it is meant that size is centimetre below the magnitude, characteristic size is in micron dimension, may command, movable microelectromechanicdevice device, it is at the mechanical component of realizing on the millimicron size existing on many macroscopic scales, and and microelectronics organically in conjunction with constituting system with specific function, it have in light weight, volume is little, cost is low and advantage such as integrated.Micro-electronic mechanical system technique rises in the mid-80, obtains fast development the beginning of the nineties.Many in the world developed countries all are placed on the status of first developing to micro-electronic mechanical system technique at present.The U.S. classifies micro-electronic mechanical system technique and space technology and information technology as the three big key technologies of 21 century.Microelectromechanical systems both can collect transducer, actuator and digital circuit on a block semiconductor chip, realized that whole system is integrated, transducer, actuator and circuit can be made respectively again mix again integrated.The main application fields of microelectromechanical systems has: guidance, navigation, micro-satellite, weapons, radar, optical communication, microwave communication, medical science etc.Micro-electronic mechanical system technique develop rapidly abroad, the research and development achievement is exceedingly fast to the speed that product transforms.Because it meets the general trend of human technical development, promptly realize more function with less resources, be rapidly developed in the period of 10 in the past and nanometer technology is listed as the micro-/ nano technology, be called as one of key technology of 21st century.
The microelectron-mechanical process technology is as MEMS processing basis, and its status also becomes more and more important with effect.The microelectron-mechanical process technology is with silica-based little master that is processed as, and also has LIGA, accurate LIGA and based on metal or the processing of nonmetallic precision optical machinery.Silica-based little processing is divided into body silicon process technology and surface processing technique.LIGA technology originates from Germany, and its advantage is the depth-to-width ratio height of making, the device performance height of producing.But because processing needs the X-ray synchrotron radiation source, processing cost is too high, and the user is less at present.In silica-based micro fabrication, Surface Machining adopts multi-layer film structure and sacrifice layer corrosion technology, complex manufacturing technology and wayward, and the movable structure part-structure of preparation, thickness are generally below 3 microns.What employing was maximum in bulk silicon technological is body dissolved silicon chip technology, and promptly the double-decker of silicon-glass bonding is compared bulk silicon technological and had bigger processing space (generally greater than 20 μ m) with surface treatment.But conventional bulk dissolved silicon chip technology is owing to adopt dense diffusion technique to prepare the monocrystalline silicon heavily boron layer, the thickness of monocrystalline silicon heavily boron layer is generally less than 40 microns, the thickness of its silicon movable structure part of the device of preparation is corresponding also less than 40 microns, and the stress of silicon structure part is bigger, has hindered the further raising of device performance.In addition because the device for preparing comprises silicon and glass two parts, the stress influence that brought by two kinds of material thermal expansion coefficient differences.
Summary of the invention
Technical problem to be solved by this invention just provides a kind of absolutely dry method deep-etching micro machining process based on Si-Si bonding of low-resistivity single-crystal-silicon micro mechanical structure processing technology; And the micro-mechanical movable thickness of structure that the inventive method also has preparation can reach more than 100 microns, and device performance height, stress are low, and manufacturing process is simple, and is repeatable strong, advantages such as low cost of manufacture.
Technical problem to be solved by this invention is realized that by following technical proposal it comprises step:
1. prepare 0.2 micron silicon dioxide layer 2 of one deck on bottom monocrystalline silicon piece 1 surface of twin polishing with thermal oxidation or depositing technics to 2.0 micron thickness,
2. make bonding table top and scribe line figure 3 with photoetching process and reactive ion etching process by lithography in bottom monocrystalline silicon piece 1 bottom surface, bonding table top and scribe line figure 3 etching depths are 1 to 2 micron,
3. make bonding table top and scribe line figure 5 with photoetching process and reactive ion etching process by lithography in top monocrystalline silicon sheet 4 bottom surfaces of twin polishing, bonding table top and scribe line figure 5 etching depths are 2 to 20 microns,
4. there is the one side of bonding table top and scribe line figure 5 to be bonded on the silicon dioxide layer 2 on bottom monocrystalline silicon piece 1 surface top monocrystalline silicon sheet 4 with bonding technology, forms top monocrystalline silicon sheet 4, silicon dioxide layer 2, bottom monocrystalline silicon piece 1 whole trilaminate material structure,
5. with abrasive disc, glossing top monocrystalline silicon sheet 4 being thinned to thickness is 100 to 200 microns,
6. the wire bond figure 6 that constitutes at top monocrystalline silicon sheet 4 surface preparation titaniums, platinum, golden three-layer metal with dual surface lithography, sputter, the technology peeled off, the thickness of wire bond figure 6 is 1800 dust to 2200 dusts,
7. use photoetching process at top monocrystalline silicon sheet 4 surface preparation one deck photoresists 7, form micro mechanical structure figure 8 and scribe line figure 9 after photoresist 7 exposes, develops,
8. use scribing machine along 9 scribings of scribe line figure, draw thoroughly layer monocrystalline silicon piece 4 successively, draw saturating silicon dioxide layer 2, draw but do not draw layer monocrystalline silicon piece 1 of revealing the exact details,
9. use deep reaction ion etching technology etching top monocrystalline silicon sheet 4, etching depth is removed photoresist 7 to silicon dioxide layer 2 with removing of photoresist by plasma technology, forms micro mechanical structure 10,
10. break bottom monocrystalline silicon piece 1 off with the fingers and thumb sheet along scribe line figure 9, form discrete micro mechanical structure tube core, finish absolutely dry method deep-etching micro machining based on Si-Si bonding.
Above-mentioned the 3. in the step resistivity of the top monocrystalline silicon sheet 4 of twin polishing be 0.01 to 0.001 ohmcm.
Above-mentioned the 4. the temperature of the bonding technology in the step be 1000 ℃ to 1200 ℃.
The present invention compares background technology and has following advantage
The present invention adopts the absolutely dry method deep-etching micro machining process based on Si-Si bonding, the movable micro mechanical structure thickness of having avoided dense boron diffusion technology to bring is lower than 40 microns limitation, can be greater than 100 microns, and avoided the shortcoming of the structure sheaf stress that dense boron diffusion causes, and stress and malformation that the different structure material thermal expansion coefficient does not match and caused have greatly been reduced; The micro-structural of having avoided wet method bulk silicon etching technology to bring discharges problem and environment is poisoned problem, the device performance height of its making, and the reliability height, repeatable strong, improved rate of finished products, reduced cost.
Description of drawings
Fig. 1 is the process flow diagram that the present invention is based on the absolutely dry method deep-etching micro machining process of Si-Si bonding.
Among the figure: 1 is the bottom monocrystalline silicon piece, 2 is silicon dioxide layer, 3 is bonding table top and scribe line figure, 4 is the top monocrystalline silicon sheet, and 5 is bonding table top and scribe line figure, and 6 is the wire bond figure, 7 is photoresist, 8 is the micro mechanical structure figure, and 9 is the scribe line figure, and 10 is the micro-mechanical movable structure.
Embodiment
With reference to Fig. 1, comprise that procedure of processing is as follows:
(1) prepares one deck 0.2 micron silicon dioxide layer 2 to 2.0 micron thickness on the surface of the bottom monocrystalline silicon piece 1 of commercially available twin polishing with thermal oxidation or depositing technics with commercially available general oxidation or deposition apparatus, the thickness of the silicon dioxide layer 2 of thermal oxide growth is 0.4 micron among the embodiment, as Fig. 1-1.
(2) with commercially available general lithographic equipment and commercially available general reactive ion etching equipment, make bonding table top and scribe line figure 3 by lithography in the bottom surface of bottom monocrystalline silicon piece 1 with conventional photoetching process, 1 to 2 micron of bonding table top and scribe line figure 3 etching depth, among the embodiment etching 1.5 microns, as Fig. 1-2.
(3) with commercially available general lithographic equipment and commercially available general reactive ion etching equipment, the bottom surface of top monocrystalline silicon sheet 4 that is lower than the twin polishing of 0.01 ohmcm in commercially available resistivity makes bonding table top and scribe line figure 5 by lithography, bonding table top and scribe line figure 5 etching depths are 2 to 20 microns, two monocrystalline silicon pieces of throwing of 0.001 ohmcm have been adopted among the embodiment, etching depth is 5 microns, as Fig. 1-3.
(4) closing equipment with commercially available general silicon-silicon bond has the one side of bonding table top and scribe line figure 5 to be bonded on the silicon dioxide layer 2 on bottom monocrystalline silicon piece 1 surface top monocrystalline silicon sheet 4, form top monocrystalline silicon sheet 4, silicon dioxide layer 2, bottom monocrystalline silicon piece 1 whole trilaminate material structure, the temperature of bonding technology is 1000 ℃ to 1200 ℃, bonding temperature is 1100 ℃ among the embodiment, as Fig. 1-4.
(5) with commercially available general abrasive disc, polissoir top monocrystalline silicon 4 being thinned to thickness is 100 to 200 microns, and top monocrystalline silicon sheet 4 reduced thickness to 120 micron among the embodiment are as Fig. 1-5.
(6) with commercially available general dual surface lithography equipment, commercially available general sputtering equipment, commercially available general ultrasonic peel-off device, the wire bond figure 6 that constitutes at top monocrystalline silicon sheet 4 surface preparation titaniums, platinum, golden three-layer metal with the photoetching of routine, sputter, stripping technology, wire bond figure 6 thickness are 1800 dust to 2200 dusts, the thickness of wire bond figure 6 is 2000 dusts among the embodiment, as Fig. 1-6.
(7) with the surface preparation one deck photoresist 7 of commercially available general lithographic equipment at top monocrystalline silicon sheet 4, photoresist 7 back of exposing, develop is formed micro mechanical structure figure 8 and scribe line figure 9, used the AZ1500 photoresist among the embodiment, as Fig. 1-7.
(8) with commercially available general scribing machine along 9 scribings of scribe line figure, draw thoroughly layer monocrystalline silicon piece 4 successively, draw saturating silicon dioxide layer 2, draw but do not draw layer monocrystalline silicon piece 1 of revealing the exact details, draw layer monocrystalline silicon piece 4 thoroughly among the embodiment, draw saturating silicon dioxide layer 2, the bottom monocrystalline silicon piece 1 scribing degree of depth is 100 microns, as Fig. 1-8.
(9) with commercially available general deep reaction ion etching equipment etching top monocrystalline silicon sheet 4, etching depth is removed photoresist 7 to silicon dioxide layer 2 with removing of photoresist by plasma technology, forms micro mechanical structure 9, used the microwave plasma degumming equipment among the embodiment, as Fig. 1-9.
(10) break bottom monocrystalline silicon piece 1 off with the fingers and thumb sheet along scribe line figure 9 with the commercially available general sheet equipment of breaking off with the fingers and thumb, form each independently micro mechanical structure tube core, finish absolutely dry method deep-etching micro machining, as Fig. 1-10 based on Si-Si bonding.
Claims (3)
1, a kind of absolutely dry method deep-etching micro machining process based on Si-Si bonding is characterized in that it comprises step:
1. prepare 0.2 micron silicon dioxide layer of one deck (2) on bottom monocrystalline silicon piece (1) surface of twin polishing with thermal oxidation or depositing technics to 2.0 micron thickness,
2. use photoetching process and reactive ion etching process to make bonding table top and scribe line figure (3) by lithography in bottom monocrystalline silicon piece (1) bottom surface, bonding table top and scribe line figure (3) etching depth are 1 to 2 micron,
3. top monocrystalline silicon sheet (4) bottom surface that is lower than the twin polishing of 0.01 ohmcm in resistivity with photoetching process and reactive ion etching process makes bonding table top and scribe line figure (5) by lithography, bonding table top and scribe line figure (5) etching depth are 2 to 20 microns
4. there is the one side of bonding table top and scribe line figure (5) to be bonded on the silicon dioxide layer (2) on bottom monocrystalline silicon piece (1) surface top monocrystalline silicon sheet (4) with bonding technology, form top monocrystalline silicon sheet (4), silicon dioxide layer (2), the whole trilaminate material structure of bottom monocrystalline silicon piece (1)
5. using abrasive disc, glossing that top monocrystalline silicon sheet (4) is thinned to thickness is 100 to 200 microns,
6. the wire bond figure (6) of using dual surface lithography, sputter, stripping technology to constitute at top monocrystalline silicon sheet (4) surface preparation titanium, platinum, golden three-layer metal, the thickness of wire bond figure (6) is 1800 dust to 2200 dusts,
7. use photoetching process at top monocrystalline silicon sheet (4) surface preparation one deck photoresist (7), form micro mechanical structure figure (8) and scribe line figure (9) behind photoresist (7) exposure imaging,
8. use scribing machine along scribe line figure (9) scribing, draw thoroughly layer monocrystalline silicon piece (4) successively, draw saturating silicon dioxide layer (2), draw but do not draw layer monocrystalline silicon piece (1) of revealing the exact details,
9. use deep reaction ion etching technology etching top monocrystalline silicon sheet (4), etching depth is removed photoresist (7) to silicon dioxide layer (2) with removing of photoresist by plasma technology, forms micro mechanical structure (10),
10. break bottom monocrystalline silicon piece (1) off with the fingers and thumb sheet along scribe line figure (9), form discrete micro mechanical structure tube core, finish absolutely dry method deep-etching micro machining based on Si-Si bonding.
2, the absolutely dry method deep-etching micro machining process based on Si-Si bonding according to claim 1, it is characterized in that described the 3. in the step top monocrystalline silicon sheet (4) resistivity be 0.01 to 0.001 ohmcm.
3, the absolutely dry method deep-etching micro machining process based on Si-Si bonding according to claim 1 and 2, it is characterized in that described the 4. in the step temperature of bonding technology be 1000 ℃ to 1200 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03143281 CN1218365C (en) | 2003-09-05 | 2003-09-05 | Absolute-dry-method deep-etching micro-mechanical processing method based on silocon-silicon linkage |
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| CN 03143281 CN1218365C (en) | 2003-09-05 | 2003-09-05 | Absolute-dry-method deep-etching micro-mechanical processing method based on silocon-silicon linkage |
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| CN1489180A CN1489180A (en) | 2004-04-14 |
| CN1218365C true CN1218365C (en) | 2005-09-07 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1321054C (en) * | 2004-07-06 | 2007-06-13 | 华东师范大学 | Preparation method of silicon-based micro mechanical photomodulator chip |
| CN1305110C (en) * | 2004-09-10 | 2007-03-14 | 北京工业大学 | Direct bonding method for silicon sheet at low temperature |
| CN100403033C (en) * | 2005-03-23 | 2008-07-16 | 中国电子科技集团公司第四十九研究所 | Bonding technology for silicon micro acceleration transducer |
| CN101456532B (en) * | 2005-07-04 | 2012-06-20 | 俞度立 | Micro scroll vane and method for producing micro scroll vane substrates |
| CN100513298C (en) * | 2006-11-28 | 2009-07-15 | 厦门大学 | Method for bonding silicon with gold |
| CN101293628B (en) * | 2008-04-03 | 2010-08-04 | 华中科技大学 | Process for manufacturing three-dimensional miniature mold |
| CN104865001B (en) * | 2014-02-22 | 2018-01-12 | 苏州亘科医疗科技有限公司 | Micromechanics microminiature piezoresistive pressure sensor and its manufacture method |
| CN104860260A (en) * | 2015-04-16 | 2015-08-26 | 中国电子科技集团公司第十三研究所 | Scribing method for MEMS wafer level packaging |
| CN114019589B (en) * | 2021-11-09 | 2024-03-22 | 深圳迈塔兰斯科技有限公司 | Optical attenuation sheet |
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- 2003-09-05 CN CN 03143281 patent/CN1218365C/en not_active Expired - Lifetime
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