CN101364044B - Minuteness processing method for upper substrate of glass - Google Patents
Minuteness processing method for upper substrate of glass Download PDFInfo
- Publication number
- CN101364044B CN101364044B CN2008102230498A CN200810223049A CN101364044B CN 101364044 B CN101364044 B CN 101364044B CN 2008102230498 A CN2008102230498 A CN 2008102230498A CN 200810223049 A CN200810223049 A CN 200810223049A CN 101364044 B CN101364044 B CN 101364044B
- Authority
- CN
- China
- Prior art keywords
- substrate
- glass
- glass sheet
- mask
- photopolymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Micromachines (AREA)
Abstract
The invention discloses a micro-machining method for a substrate on glass. The method comprises the following steps: bonding a glass sheet with the substrate by the pressure bonding process using a photosensitive polymer as intermediate adhesive layer to form a substrate on glass; applying a light beam to the back surface of the photosensitive polymer via the glass sheet to transfer a mask pattern to the intermediate adhesive layer and thus to define a pattern of the intermediate adhesive layer; thinning the substrate and deep-etching to form a through-hole; and developing the photosensitive polymer after exposure to release the structure. The micro-machining method can achieve the effect of three-dimensional machining of various materials on the glass substrate with low cost, high accuracy and high depth-width ratio, ensure the micro-machining technique compatible to the CMOS technique, and is applicable to the processing of various MEMS devices.
Description
Technical field
The invention relates to microelectromechanical systems (MEMS) micro-processing technology, be specifically related to a kind of fine machining method of upper substrate of glass.
Background technology
SOI (silicon-on-insulator) technology is increasing in the effect of semiconductor and the performance of micromechanics field at present.The SOI MEMS device application of high-aspect-ratio is in inertial sensor and static driven, and the device technology that obtains is simple, the efficient height, and the capacitor plate area is big, driving force is big, chip occupying area is little, power load-bearing capacity and integrated level are all higher.Yet SOI wafer cost is higher, and this has hindered the application of cost sensitivity; In addition, in the SOI MEMS structure, the graphical definition of insulation course is to control by etching time, and dimensional accuracy is difficult to be protected, and has influenced device performance; SOI uses silicon as unique structured material, silicon materials exist the self-conductive performance not good, shortcomings such as fracture toughness is low, performance and the range of application and the reliability of device have been restricted, need use special process to form side wall at silicon face as the application scenario of needs contact conduction and cover, and work long hours and to cause contact failure.
Summary of the invention
The present invention has overcome deficiency of the prior art, and a kind of fine machining method that is used to process the upper substrate of glass of MEMS device is provided.
Technical scheme of the present invention is:
A kind of fine machining method of upper substrate of glass, its step comprises:
1) uses photopolymer as middle adhesion layer,, glass sheet and substrate are bonded together, form upper substrate of glass by the method for pressure bonding;
2) see through glass sheet photopolymer is carried out back-exposure, on the adhesion layer, define the middle layer figure in the middle of mask pattern is transferred to;
3) substrate attenuate, and deep erosion forms through hole;
4) photopolymer that exposed is developed releasing structure.
Described step 2) mask is the separate mask version, and it is positioned at plane of exposure one side of glass sheet.
Described step 2) mask is, before the step 1), and the hard mask layer of on the one side adjacent of glass sheet, making with middle adhesion layer, this hard mask layer can be a lighttight metal or a metal compound layer.
Described substrate adopts a kind of in silicon, germanium, III-V compounds of group, Titanium, aluminium and the molybdenum.
Described photopolymer is photoresist SUg, photosensitive BCB, photosensitive Polyimide, photosensitive PMMA, AZ series photoresist etc.
Compared with prior art, the invention has the beneficial effects as follows:
The fine machining method of upper substrate of glass of the present invention is by technologies such as pressure bonding, back-exposure, chemically mechanical polishing and deep erosions, can on glass substrate, realize the three-dimensional processing of low cost, high precision, high-aspect-ratio of multiple material, and the micromachined of technology and CMOS process compatible can be used for processing multiple MEMS device.
Description of drawings
Fig. 1 is the process chart of the embodiment of the invention.
Embodiment
Below in conjunction with Fig. 1 and embodiment the present invention is described in further detail:
One, the preparation of substrate: (Fig. 1 a) as substrate to select glass sheet for use;
Two, choice of substrate: substrate material can be silicon, germanium, III-V compounds of group, Titanium, aluminium or molybdenum etc.;
Three, light tight metal of glass sheet surface deposit or metal compound layer, as a hard mask, and graphical.
Be specially, in order to improve the adhesion of hard mask layer and glass, at first at glass sheet surface deposit one metal adhesion layer, as sputtered with Ti 3000nm; The hard mask of depositing metal again is as sputter Ni50000nm; Graphically (Fig. 1 b);
Four, photopolymer is bonded together substrate and substrate by the pressure bonding as middle adhesion layer, and metal hard mask is positioned at the one side adjacent with middle adhesion layer of glass sheet, carries out back-exposure in glass sheet one side (no mask).
Be specially,,,, make the photopolymer layer that mediates again with the overlapping with it placement of substrate such as the negative photoresist SU8 of thick 5 μ m at glass substrate deposit one deck photopolymer (Fig. 1 c).By pressure bonding substrate and substrate are linked together (Fig. 1 d).Do not have mask in glass one side and carry out back-exposure (Fig. 1 e).
Five, substrate attenuate, and lose deeply, through hole formed;
Be specially, the substrate attenuate by the method for chemically mechanical polishing, is thinned to suitable thickness with substrate, as 40 μ m-100 μ m (Fig. 1 f).
Then, mask is lost in the substrate surface deposit deeply, as the SU8 photoresist of thick 50 μ m or metal hard mask etc., and graphical (Fig. 1 g);
By deep erosion, with the break-through of substrate etching (Fig. 1 h)
Six, pass the through hole of substrate, middle photopolymer is developed, releasing structure (Fig. 1 i)
Seven, remove the mask (Fig. 1 j) of substrate surface.
In the above-described embodiments, on the adjacent one side with middle adhesion layer of glass sheet, make mask layer and carry out back-exposure, in addition, can also adopt conventional photoetching technique, in plane of exposure one side that is positioned at glass sheet one mask is set, light source sees through mask, and glass sheet is carried out back-exposure.
Simultaneously, photopolymer both can be deposited on the glass substrate, also can be deposited on the substrate.
In addition, photopolymer of the present invention can also be photosensitive BCB except that photoresist SU8, photosensitive Polyimide and photosensitive PMMA and AZ series photoresist etc.
More than by specific embodiment the fine machining method of upper substrate of glass provided by the present invention has been described, it will be understood by those of skill in the art that in the scope that does not break away from essence of the present invention, can make certain deformation or modification to the present invention; Its preparation method also is not limited to disclosed content among the embodiment.
Claims (5)
1. the fine machining method of a upper substrate of glass, its step comprises:
1) uses photopolymer as middle adhesion layer,, glass sheet and Titanium, aluminium or molybdenum substrate are bonded together, form upper substrate of glass by the method for pressure bonding;
2) see through glass sheet photopolymer is carried out back-exposure, on the adhesion layer, define the middle layer figure in the middle of mask pattern is transferred to;
3) substrate attenuate, and deep erosion forms through hole;
4) photopolymer that exposed is developed releasing structure.
2. the method for claim 1 is characterized in that, described step 2) mask be the separate mask version, it is positioned at plane of exposure one side of glass sheet.
3. the method for claim 1 is characterized in that, described step 2) mask be, before the step 1), the hard mask layer of on the one side adjacent of glass sheet, making with middle adhesion layer.
4. method as claimed in claim 3 is characterized in that, described hard mask layer is a lighttight metal or a metal compound layer.
5. as claim 1,2 or 3 described methods, it is characterized in that described photopolymer is selected from a kind of in photoresist SU8, photosensitive BCB, photosensitive Polyimide and photosensitive PMMA and the photosensitive AZ series photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102230498A CN101364044B (en) | 2008-09-26 | 2008-09-26 | Minuteness processing method for upper substrate of glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102230498A CN101364044B (en) | 2008-09-26 | 2008-09-26 | Minuteness processing method for upper substrate of glass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101364044A CN101364044A (en) | 2009-02-11 |
| CN101364044B true CN101364044B (en) | 2011-07-27 |
Family
ID=40390469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102230498A Expired - Fee Related CN101364044B (en) | 2008-09-26 | 2008-09-26 | Minuteness processing method for upper substrate of glass |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101364044B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5528259B2 (en) * | 2010-05-17 | 2014-06-25 | 日東電工株式会社 | Method for manufacturing printed circuit board |
| CN102183602B (en) * | 2011-01-27 | 2014-09-17 | 电子科技大学 | Micro gas chromatographic column with high depth-to-width ratio and wet corrosion manufacturing method thereof |
| CN104098063A (en) * | 2013-04-02 | 2014-10-15 | 无锡华润上华半导体有限公司 | Strengthening method of micro-electromechanical system device in manufacture |
| US10457088B2 (en) * | 2013-05-13 | 2019-10-29 | Ridgefield Acquisition | Template for self assembly and method of making a self assembled pattern |
| CN104228304A (en) * | 2013-06-21 | 2014-12-24 | 无锡华润上华半导体有限公司 | Interlayer adhesion method applied to micro-machining manufacturing process |
| CN105819393B (en) * | 2015-01-06 | 2017-04-05 | 中芯国际集成电路制造(上海)有限公司 | The method for improving metal loss in inertial sensor |
| CN110231725B (en) * | 2019-05-20 | 2022-03-08 | 深圳市华星光电半导体显示技术有限公司 | Method for thinning micro-image glass and control system thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6617657B1 (en) * | 1998-05-08 | 2003-09-09 | Rockwell Automation Technologies, Inc. | Process for manufacture of micro electromechanical devices having high electrical isolation |
-
2008
- 2008-09-26 CN CN2008102230498A patent/CN101364044B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6617657B1 (en) * | 1998-05-08 | 2003-09-09 | Rockwell Automation Technologies, Inc. | Process for manufacture of micro electromechanical devices having high electrical isolation |
Non-Patent Citations (1)
| Title |
|---|
| Yi Futing et al..A new method for fabrication of SU8 structures with a high aspect ratio using a mask-back exposure technique.《半导体学报》.2004,第25卷(第1期),第27页. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101364044A (en) | 2009-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101364044B (en) | Minuteness processing method for upper substrate of glass | |
| US7335527B2 (en) | Method for microfabricating structures using silicon-on-insulator material | |
| US8193069B2 (en) | Stacked structure and production method thereof | |
| CN101445217B (en) | On-substrate base sheet micro-processing method | |
| WO2006019761A3 (en) | Mems device and interposer and method for integrating mems device and interposer | |
| US6933163B2 (en) | Fabricating integrated micro-electromechanical systems using an intermediate electrode layer | |
| TW201116478A (en) | Method for manufacturing microstructures | |
| US20080032501A1 (en) | Silicon on metal for mems devices | |
| CN1277142A (en) | Manufacture of integrated minuature movable silicon mechanical-structure on glass substrate | |
| CN1309040C (en) | A method for integrating CMOS circuit and bulk silicon MEMS uniwafer | |
| CN101817497B (en) | Method for preparing all-dry etching dissolved silicon chip for microstructure manufacturing | |
| US6930051B1 (en) | Method to fabricate multi-level silicon-based microstructures via use of an etching delay layer | |
| CN1218365C (en) | Absolute-dry-method deep-etching micro-mechanical processing method based on silocon-silicon linkage | |
| AU2009248425B2 (en) | Method for microfabricating structures using silicon-on-insulator material | |
| CN1439598A (en) | Dry deeply etching silicone wafer manufacture | |
| Zoschke et al. | Capping technologies for wafer level MEMS packaging based on permanent and temporary wafer bonding | |
| CN1454835A (en) | Method of manufacturing monolithic integration of movable micro physical construction on monocrystalline silicon substrate | |
| CN209721578U (en) | A kind of piezoresistive double-shaft motion sensor | |
| CN1262469C (en) | Dry-process deep-etching silicon miero mechanical working method an glass substrate | |
| CN104045055A (en) | Manufacturing method of cover plate | |
| CN1736850A (en) | A kind of removable micro-structural and preparation method by silicon and silica together support | |
| CN110002395A (en) | A kind of piezoresistive double-shaft motion sensor and preparation method thereof | |
| CN109775657B (en) | Micromachining process method and application of piezoelectric quartz structure | |
| CN1241044C (en) | Body-silicon processing method using V-groove medium isolation technology | |
| JP5109293B2 (en) | Method for manufacturing acceleration sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110727 Termination date: 20170926 |