CN1241044C - Body-silicon processing method using V-groove medium isolation technology - Google Patents
Body-silicon processing method using V-groove medium isolation technology Download PDFInfo
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- CN1241044C CN1241044C CN 03143278 CN03143278A CN1241044C CN 1241044 C CN1241044 C CN 1241044C CN 03143278 CN03143278 CN 03143278 CN 03143278 A CN03143278 A CN 03143278A CN 1241044 C CN1241044 C CN 1241044C
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Abstract
The present invention discloses a body silicon processing method by adopting V-shaped groove medium isolation technology and relates to manufacture for the structure of a microelectronic mechanical system device in the field of a microelectronic mechanical system. A V-shaped groove is manufactured on a silicon chip by adopting inductive coupling dry etching technology, and the V-shaped groove is filled by adopting medium deposited silicon dioxide. The depth of an isolation groove can achieve 10 to 200 micrometers and is far deeper than that of ordinary semiconductor dielectric isolation technology. The method is suitable for manufacturing micro mechanical structures which are connected to machines and are electrically isolated. The present invention also has the advantages of simple manufacturing process and high reproducibility. The present invention is suitable for manufacturing various kinds of micro mechanical devices, such as capacitance type micro accelerometers, micro gyroscopes, optical switches, micro mechanical microwave switches, etc.
Description
Technical field
The present invention relates to a kind of bulk-silicon processing method that adopts V-type groove media isolated in the semiconductor microactuator electric mechanical manufacturing field, be specially adapted to the manufacturing of microelectromechanical systems in the semiconductor applications (MEMS) device architecture.
Background technology
Microelectromechanical systems (MEMS) technology is to adopt the integrated circuit Micrometer-Nanometer Processing Technology, develop to 3 dimension processing from 2 dimension processing, realize MIniature machinery structure with the versatile material of integrated circuit such as silicon, gallium arsenide, and with the integrated circuit co-manufactured, finally realize a kind of new technology of chip-scale micro-system.Because it meets the general trend of human technical development, promptly realize more function with less resources, be rapidly developed in the period of 10 in the past and nanometer technology is listed as the micro-/ nano technology, be called as one of gordian technique of 21st century.
At present the MEMS manufacturing technology is divided into three kinds of body processing technology, surface processing technique and LIGA technologies, and the original technology that the present invention relates to is SOG (silicon technology on a glass substrate) technology, is a kind of important MEMS processing technology that belongs to body processing technology.
The structure of SOG technology is made of the double-layer structure of glass substrate and the monocrystalline silicon on it.Can be used to prepare inertia device, multiple mems devices such as optical device, microwave device, pressure transducer.It is simple to have technology, can conveniently realize advantages such as electrostatic actuator, substrate good insulation preformance.
But this technology also has following shortcoming: because used monocrystalline silicon is heavily doped material, conductivity is very high, be difficult to be implemented in mechanically the structure that connects, isolates on the electricity, and this structure is of many uses in inertia device, microwave device, can improve device performance.
In ic manufacturing technology, also adopt the media isolated technology, but the groove depth of grooving is generally less than 5 microns, and adopts U type groove.This technology can not be directly used in the manufacturing process of MEMS structure.
Summary of the invention
Technical matters to be solved by this invention just provides a kind of MEMS job operation, can be implemented in mechanically and connect, the bulk-silicon processing method of the employing V-type groove media isolated technology of the MEMS structure of isolating on the electricity, and the inventive method also has advantages such as manufacturing process is simple, favorable repeatability.
Technical matters to be solved is realized that by following technical proposal it comprises step:
1. adopt photoetching process to etch the table top figure of step 5 at the lower surface of monocrystalline silicon piece 3, etch step 5 with reactive ion etching process, the thickness of step 5 is 2 to 40 microns,
2. adopt photoetching process not have at monocrystalline silicon piece 3 to carve the isolation channel figure on the surface of etching step 3, and the position of isolation channel figure is relative with the position of step 3, isolation channel graphic width size 3 is 1 to 3 micron,
3. adopt the inductive coupling dry etch process in the step 5 bottom surface isolation channel figures of monocrystalline silicon piece 3, to etch the V-type groove 4 of 10 to 200 micrometer depth,
4. adopt hydrofluorite: the proportioning of water is that 1: 20 solution cleans monocrystalline silicon piece 3, and scavenging period is 1 to 5 minute,
5. adopt low-pressure chemical vapor phase deposition technology in the V-type groove 4 of monocrystalline silicon piece 3 and step 5 internal layers on deposit layer of silicon dioxide 8, deposit silicon dioxide 8 thickness are 1 to 3 micron,
6. monocrystalline silicon piece 3 is placed in the oxidation furnace, temperature is 800 to 900 ℃, oxygenation densification 10 to 20 minutes,
7. go up at glass sheet (1) and etch electrode shape with photoetching process, sputtered titanium on glass sheet 1, platinum, golden three-layer metal thickness are 1500 to 3000 dusts, separate electrode 2 shapes with stripping technology,
8. it is right the lower surface of glass sheet 1 and monocrystalline silicon piece 3 to be fitted into the glass/silicon sheet with static bonding process, and the electrode 2 on the glass sheet 1 is contacted with monocrystalline silicon 3 lower surfaces,
9. use the grinding and polishing machine with monocrystalline silicon piece 3 reduced thickness to 10 of glass/silicon sheet centering to 200 microns,
10. adopt dual surface lithography technology on monocrystalline silicon piece 3, to etch microelectron mechanical structure,
with glass sheet 1 scribing, is divided into tube core structure with sand-wheel slice cutting machine, does not break sheet off with the fingers and thumb,
adopts inductive coupling dry etch process etching monocrystalline silicon piece 3, etches into glass sheet 1 surface,
breaks into the glass sheet 1 of scribing off with the fingers and thumb tube core with the monocrystalline silicon piece 3 on being fitted in glass sheet 1, finishes the body silicon processing of adopting V-type groove media isolated technology.
The present invention compares background technology and has following advantage:
1, the present invention adopts the inductive coupling dry etch process to make the V-type groove on silicon chip, and silica-filled this V-type groove of employing dielectric deposition, the media isolated technology that realizes, 10～200 microns of groove depths, be deeper than the groove depth of common semiconductor medium isolation technology far away, can produce mechanically and connect the micro mechanical structure of isolating on the electricity.
2, the present invention makes simple, the favorable repeatability of technology of bulk silicon micro mechanic structure.
Description of drawings
Fig. 1 is the main cross-sectional view of looking of the present invention.
Fig. 2 is the plan structure synoptic diagram of front view of the present invention.
Embodiment
With reference to Fig. 1, Fig. 2, processing and manufacturing step of the present invention is:
(1) photoetching process that adopts the contact exposure machine carves the table top figure of step 5 at the lower surface of monocrystalline silicon piece 3, etches the step 5 of 2 to 40 micron thickness with the reactive ion etching process of reactive ion etching machine, and the thickness of embodiment etching step 5 is 4 microns.
(2) adopt the photoetching process of contact exposure machine not have at monocrystalline silicon piece 3 to carve the isolation channel figure on the surface of etching step 5, and the position of isolation channel figure is relative with the position of step 5, isolation channel graphic width size 7 is 1 to 3 micron, and embodiment isolation channel graphic width size 7 is 1.5 microns.
(3) the inductive coupling dry etch process of employing ICP dry etching machine etches the V-type groove 4 of 10 to 200 micrometer depth in the step 5 bottom surface isolation channel figures of monocrystalline silicon piece 3, and embodiment etches the V-type groove 4 of 10 micrometer depth.
(4) adopt hydrofluorite: the proportioning of water is that 1: 20 solution cleans monocrystalline silicon piece 3, and scavenging period is 1 to 5 minute, and the embodiment scavenging period is 1 minute.
(5) the low-pressure chemical vapor phase deposition technology that adopts LPCVD equipment deposit layer of silicon dioxide 8 in the V-type groove 4 of monocrystalline silicon piece 3 and on step 5 internal layers, deposit silicon dioxide 8 thickness are 1 to 3 micron, embodiment deposit silicon dioxide 8 thickness are 2 microns.
(6) monocrystalline silicon piece 3 is placed in the oxidation furnace, temperature is 800 to 900 ℃, oxygenation densification 10 to 20 minutes, and the embodiment temperature is 850 ℃, fine and close 15 minutes of oxygenation.
(7) photoetching process that goes up with the contact exposure machine at glass sheet (1) etches electrode shape, on glass sheet 1, use the magnetic control platform sputtered titanium, platinum, gold three-layer metal thickness is 1500 to 3000 dusts, separate electrode 2 shapes with stripping technology, the embodiment sputtered titanium, platinum, golden three-layer metal thickness is 2000 dusts.
(8) it is right the lower surface of glass sheet 1 and monocrystalline silicon piece 3 to be fitted into the glass/silicon sheet with the static bonding process of electrostatic bonding equipment, and the electrode 2 on the glass sheet 1 is contacted with monocrystalline silicon 3 lower surfaces.
(9) to 200 microns, embodiment is thinned to 20 microns to usefulness grinding and polishing machine with monocrystalline silicon piece 3 reduced thickness to 10 of glass/silicon sheet centering.
(10) adopt the dual surface lithography technology of double face photoetching machine on monocrystalline silicon piece 3, to etch microelectron mechanical structure.
(11) with sand-wheel slice cutting machine with glass sheet 1 scribing, be divided into tube core structure, do not break sheet off with the fingers and thumb.
(12) the inductive coupling dry etch process etching monocrystalline silicon piece 3 of employing ICP dry etching machine etches into glass sheet 1 surface.
(13) break into the glass sheet 1 of scribing off with the fingers and thumb tube core with the monocrystalline silicon piece 3 on being fitted in glass sheet 1, finish the body silicon processing of adopting V-type groove media isolated technology.
Claims (1)
1, a kind of bulk-silicon processing method that adopts V-type groove media isolated technology is characterized in that comprising step:
1. adopt photoetching process to etch the table top figure of step (5) at the lower surface of monocrystalline silicon piece (3), etch step (5) with reactive ion etching process, the thickness of step (5) is 2 to 40 microns,
2. adopt photoetching process not have at monocrystalline silicon piece (3) to carve the isolation channel figure on the surface of etching step (5), and the position of the same step in the position of isolation channel figure (5) is relative, isolation channel graphic width size (7) is 1 to 3 micron,
3. adopt the inductive coupling dry etch process in the isolation channel figure of step (5) bottom surface of monocrystalline silicon piece (3), to etch the V-type groove (4) of 10 to 200 micrometer depth,
4. adopt hydrofluorite: the proportioning of water is that 1: 20 solution cleans monocrystalline silicon piece (3), and scavenging period is 1 to 5 minute,
5. adopt low-pressure chemical vapor phase deposition technology deposit layer of silicon dioxide (8) in the V-type groove (4) of monocrystalline silicon piece (3) and on step (5) internal layer, deposit silicon dioxide (8) thickness is 1 to 3 micron,
6. monocrystalline silicon piece (3) is placed in the oxidation furnace, temperature is 800 to 900 ℃, oxygenation densification 10 to 20 minutes,
7. etching electrode shape with photoetching process on glass sheet (1), is 1500 to 3000 dusts at the last sputtered titanium of glass sheet (1), platinum, golden three-layer metal thickness, separates electrode (2) shape with stripping technology,
8. it is right the lower surface of glass sheet (1) and monocrystalline silicon piece (3) to be fitted into the glass/silicon sheet with static bonding process, and the electrode (2) on the glass sheet (1) is contacted with monocrystalline silicon (3) lower surface,
9. use the grinding and polishing machine with monocrystalline silicon piece (3) reduced thickness to 10 of glass/silicon sheet centering to 200 microns,
10. adopt dual surface lithography technology on monocrystalline silicon piece (3), to etch microelectron mechanical structure,
with glass sheet (1) scribing, is divided into tube core structure with sand-wheel slice cutting machine, does not break sheet off with the fingers and thumb,
adopts inductive coupling dry etch process etching monocrystalline silicon piece (3), etches into glass sheet (1) surface,
breaks into the glass sheet (1) of scribing off with the fingers and thumb tube core with the monocrystalline silicon piece (3) on being fitted in glass sheet (1), finishes the body silicon processing of adopting V-type groove media isolated technology.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 03143278 CN1241044C (en) | 2003-09-05 | 2003-09-05 | Body-silicon processing method using V-groove medium isolation technology |
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| CN 03143278 CN1241044C (en) | 2003-09-05 | 2003-09-05 | Body-silicon processing method using V-groove medium isolation technology |
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| CN1241044C true CN1241044C (en) | 2006-02-08 |
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Assignee: Shijiazhuang Development Zone North-China Integrated Circuit Design Co.,Ltd. Assignor: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY Group Corp. Contract fulfillment period: 2007.5.20 to 2012.5.20 Contract record no.: 2008130000002 Denomination of invention: Body-silicon processing method using v-groove medium isolation technology Granted publication date: 20060208 License type: Exclusive license Record date: 20081008 |
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