CN1262469C - Dry-process deep-etching silicon miero mechanical working method an glass substrate - Google Patents
Dry-process deep-etching silicon miero mechanical working method an glass substrate Download PDFInfo
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- CN1262469C CN1262469C CN 03143279 CN03143279A CN1262469C CN 1262469 C CN1262469 C CN 1262469C CN 03143279 CN03143279 CN 03143279 CN 03143279 A CN03143279 A CN 03143279A CN 1262469 C CN1262469 C CN 1262469C
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Abstract
The present invention discloses a dry deep etching silicon micro mechanical processing method on a glass substrate, which relates to the manufacture of a microelectronic mechanical structure device in the field of microelectronic mechanical technique processing technology. Two-sided photoetching, deep reactive ion etching and silicon-glass bonding technology are utilized, a movable suspending micro structure having low stress and large longitudinal size can be manufactured on a glass substrate, and long-time diffusion at a high temperature, milling technology and poisonous wet etching technology in a traditional micro mechanical processing technique are omitted so as to obtain the aims of optimizing the micro mechanical processing technique and increasing the yield of products. The present invention has the advantages of low manufacturing cost, easy operation and manufacture, high yield, etc., and is suitable for manufacturing various devices having movable micro structures, such as capacitor type micro accelerometers, optical switches, variable optical attenuators, micro reflecting mirrors, etc.
Description
Technical field
The present invention relates on a kind of glass substrate in the microelectron-mechanical processing technique field absolutely dry method and lose the silicon micro mechanical processing method deeply, be specially adapted to multiple making with low stress, movable microelectron mechanical structure device that longitudinal size is big.
Background technology
Microelectromechanical systems claims MEMS again, it is meant that size is below the millimeter magnitude, can control, movable microelectromechanicdevice device, it is at the mechanical component of realizing on the millimicron size existing on many macroscopic scales, and and microelectronics organically in conjunction with constituting system with specific function, it have in light weight, volume is little, cost is low and advantage such as integrated.Micro-electronic mechanical system technique rises in the mid-80, obtains fast development the beginning of the nineties.Many in the world developed countries all are placed on the status of first developing to micro-electronic mechanical system technique at present.The U.S. classifies micro-electronic mechanical system technique and space technology and information technology as the three big key technologies of 21 century.Microelectromechanical systems both can collect sensor, actuator and digital circuit on a block semiconductor chip, realized that whole system is integrated, sensor, actuator and circuit can be made respectively again mix again integrated.The main application fields of microelectromechanical systems has: guidance, navigation, micro-satellite, weapons, radar, optic communication, microwave communication, medical science etc.Micro-electronic mechanical system technique develop rapidly abroad, the research and development achievement is exceedingly fast to the speed that product transforms.Many micro-electronic mechanical system techniques are ripe, even become cheap commodity appearance in daily life.
The microelectron-mechanical process technology also becomes more and more important as its status, MEMS processing basis with effect.The microelectron-mechanical process technology is based on silica-based, also has LIGA, accurate LIGA and based on metal or the processing of nonmetallic precision optical machinery.Silica-based little processing is divided into processing of body silicon and surface silicon processing.The processing of body silicon is divided into body silicon " sandwich " again, body dissolved silicon chip, front body silicon, SOI and SCREAM etc.Silica-based technology and LIGA, accurate LIGA technology are easy to prepared in batches, become the main flow of microelectromechanical systems manufacturing technology gradually.LIGA technology originates from Germany, and its advantage is the depth-to-width ratio height of making, the device performance height of producing.But because processing needs the X-ray synchrotron radiation source, processing cost is too high, and the user is less at present.In silica-based technology, Surface Machining adopts multi-layer film structure (being generally less than 3 μ m) and sacrifice layer corrosion technology, complex manufacturing technology and wayward, present domestic employing is less, the main bulk silicon technological that adopts, what employing was maximum in bulk silicon technological is body dissolved silicon chip technology, it is the double-decker of silicon one glass bonding, compare bulk silicon technological with surface treatment and have bigger processing space (generally greater than 20 μ m), but the dense boron diffusion of the long-time high temperature of conventional bulk dissolved silicon chip arts demand, this will bring bigger stress influence to device and make the malformation of device, performance reduces, conventional bulk dissolved silicon chip technology also needs with special equipment chip to be carried out attenuate and glossing in addition, this will make the processed finished products rate reduce greatly, and conventional bulk dissolved silicon chip technology also needs the poisonous wet corrosion technique that is pernicious to people, so there are many shortcomings in conventional bulk dissolved silicon chip technology.
Summary of the invention
The objective of the invention is to avoid the weak point in the above-mentioned background technology and the preparation method of movable micro mechanical structure on a kind of glass substrate that adopts dual surface lithography, deep reaction ion etching and silicon-Glass Bonding Technology is provided, absolutely dry method is lost the silicon micro mechanical processing method and conventional bulk dissolved silicon chip technology has similarity deeply on the glass substrate that the present invention relates to, difference is the above-mentioned shortcoming that has overcome conventional bulk dissolved silicon chip technology, has reached the purpose of optimizing micromachining technology and improving the finished product rate.The present invention also has low cost of manufacture, operates characteristics such as manufacturing is simple and easy, yield rate height.
The object of the present invention is achieved like this, and it comprises the following steps:
1. heat-resisting 7740 sheet glass 1 of twin polishing;
2. the twin polishing monocrystalline silicon piece 2;
3. on the monocrystalline silicon piece 2 of twin polishing, be coated with one deck photoresist 3, form the graphical window of the bonding platform 4 of silicon-glass bonding in monocrystalline silicon piece 2 one sides of twin polishing with photoetching process;
4. be mask with photoresist 3, the one side of monocrystalline silicon piece 2 bonding platforms 4 graphical windows of deep reaction ion etching twin polishing forms bonding platform 4;
5. boil with sulfuric acid and removed photoresist 3 in 8 to 10 minutes, have the one side and the synthetic silicon of heat-resisting 7740 sheet glass of the twin polishing 1 electrostatic bond-glass bonding pad of bonding platform 4 with the monocrystalline silicon piece 2 of twin polishing;
6. the one side at silicon-glass bonding pad silicon is coated with last layer photoresist 6, carries out dual surface lithography, etches the graphical window with movable microstructure 5;
7. be mask with photoresist 6, the graphical window of deep reaction ion etching movable microstructure 5 forms movable microstructure 5, finishes on the glass substrate absolutely dry method and loses silicon micro mechanical processing deeply.
Above-mentioned the 2. in the step thickness of twin polishing monocrystalline silicon piece 2 be 280 μ m to 320 μ m.
Above-mentioned the 4. in the step degree of depth of deep reaction ion etching monocrystalline silicon piece 2 be 180 μ m to 240 μ m.
Above-mentioned the 5. in the step electrostatic bonding temperature be that 350 ℃ to 500 ℃, voltage are 800V to 1200V.
The present invention compares background technology and has following advantage:
The present invention can make low stress, movable unsettled micro-structural that longitudinal size is big, long-time High temperature diffusion, grinding and polishing process and poisonous wet corrosion technique in traditional micromachining technology have been saved, dual surface lithography, deep reaction ion etching and silicon-glass bonding manufacture craft has been adopted in invention, has cheap for manufacturing cost, simple and easy, the high advantage of yield rate of operation manufacturing.
Description of drawings
Fig. 1 loses the process chart of silicon micro mechanical processing method deeply for absolutely dry method on the glass substrate of the present invention.
Among Fig. 1: 1 is that heat-resisting 7740 sheet glass of twin polishing, 2 are that twin polishing monocrystalline silicon piece, 3 is that photoresist, 4 is that bonding platform, 5 is that movable microstructure, 6 is photoresist.
The specific embodiment
(1) heat-resisting 7740 sheet glass 1 of twin polishing on commercially available general polishing machine are as Fig. 1-1.
(2) twin polishing monocrystalline silicon piece 2 on commercially available general polishing machine, the thickness of twin polishing monocrystalline silicon piece 2 are 280 μ m to 320 μ m, and the thickness of embodiment twin polishing monocrystalline silicon piece 2 is 300 μ m, as Fig. 1-2.
(3) be coated with one deck positivity AZ1450 type photoresist 3 on the monocrystalline silicon piece 2 of twin polishing, resist coating 3 thickness are 2 μ m, as Fig. 1-3.
(4) carry out photoetching with commercially available general litho machine, form the graphical window of the bonding platform 4 of silicon-glass bonding in the one side of the monocrystalline silicon piece 2 of twin polishing, as Fig. 1-4.
(5) be mask with photoresist 3, deep reaction ion etching twin polishing monocrystalline silicon piece 2 has the one side of the graphical window of bonding platform 4, forms bonding platform 4, and monocrystalline silicon piece 2 etching depths of twin polishing are 180 μ m to 240 μ m, it is 200 μ m that embodiment carves the decorations degree of depth, as Fig. 1-5.
(6) boil 8 to 10 minutes removal photoresists 3 with sulfuric acid, as Fig. 1-6.
(7) have one side and the synthetic silicon of the commercially available general electrostatic bonding machine electrostatic bond of heat-resisting 7740 sheet glass of twin polishing 1 usefulness-glass bonding pad of bonding platform 4 with the monocrystalline silicon piece 2 of twin polishing, bonding temperature is that 350 ℃ to 500 ℃, voltage are 800V to 1200V, the embodiment bonding temperature is that 400 ℃, voltage are 1000V, as Fig. 1-7.
(8) one side at silicon-glass bonding pad silicon is coated with last layer positivity AZ1450 type photoresist 6, and resist coating 6 thickness are 2 μ m, as Fig. 1-8.
(9) carry out dual surface lithography with commercially available general double face photoetching machine, form graphical window, as Fig. 1-9 with movable microstructure 5.
(10) be mask with photoresist 6, the graphical window of deep reaction ion etching movable microstructure 5 forms movable microstructure 5, as Fig. 1-10.
Claims (3)
1, absolutely dry method is lost the silicon micro mechanical processing method deeply on a kind of glass substrate, and it comprises step:
1. heat-resisting 7740 sheet glass of twin polishing (1);
2. twin polishing monocrystalline silicon piece (2);
3. on the monocrystalline silicon piece (2) of twin polishing, be coated with one deck photoresist (3), form the graphical window of the bonding platform (4) of silicon-glass bonding in monocrystalline silicon piece (2) one side of twin polishing with photoetching process:
4. be mask with photoresist (3), the one side of the monocrystalline silicon piece of deep reaction ion etching twin polishing (2) bonding platform (4) graphical window forms bonding platform (4);
5. boil with sulfuric acid and removed photoresist (3) in 8 to 10 minutes, have the one side and the synthetic silicon of heat-resisting 7740 sheet glass of twin polishing (1) electrostatic bond-glass bonding pad of bonding platform (4) with the monocrystalline silicon piece (2) of twin polishing;
6. the one side at silicon-glass bonding pad silicon is coated with last layer photoresist (6), carries out dual surface lithography, etches the have movable microstructure graphical window of (5);
7. be mask with photoresist (6), the graphical window of deep reaction ion etching movable microstructure (5) forms movable microstructure (5), finish on the glass substrate absolutely dry method and lose silicon micro mechanical processing deeply, it is characterized in that: it described the 2. in the step thickness of twin polishing monocrystalline silicon piece (2) be 280 μ m to 320 μ m.
2, absolutely dry method is lost the silicon micro mechanical processing method deeply on the glass substrate according to claim 1, it is characterized in that described the 4. in the step deep reaction ion etching monocrystalline silicon piece (2) degree of depth be 180 μ m to 240 μ m.
3, absolutely dry method is lost the silicon micro mechanical processing method deeply on the glass substrate according to claim 1 and 2, it is characterized in that described the 5. in the step electrostatic bonding temperature be that 350 ℃ to 500 ℃, voltage are 800V to 1200V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03143279 CN1262469C (en) | 2003-09-05 | 2003-09-05 | Dry-process deep-etching silicon miero mechanical working method an glass substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 03143279 CN1262469C (en) | 2003-09-05 | 2003-09-05 | Dry-process deep-etching silicon miero mechanical working method an glass substrate |
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| Publication Number | Publication Date |
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| CN1488569A CN1488569A (en) | 2004-04-14 |
| CN1262469C true CN1262469C (en) | 2006-07-05 |
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| CN 03143279 Expired - Lifetime CN1262469C (en) | 2003-09-05 | 2003-09-05 | Dry-process deep-etching silicon miero mechanical working method an glass substrate |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1315719C (en) * | 2004-06-17 | 2007-05-16 | 复旦大学 | Partial photo-etching process used for silicon micro machining |
| CN1325367C (en) * | 2005-09-16 | 2007-07-11 | 中国电子科技集团公司第二十四研究所 | Method for producing MEMS sensor suspension beam structure |
| CN100396595C (en) * | 2005-12-27 | 2008-06-25 | 北京大学 | Method for preparing nanometer suspension arm structure using nanometer embossing and reactive ion etching technology |
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Assignee: TONGHUI ELECTRONICS Co.,Ltd. Assignor: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY Group Corp. Contract record no.: 2010130000064 Denomination of invention: Dry-process deep-etching silicon miero mechanical working method an glass substrate Granted publication date: 20060705 License type: Exclusive License Open date: 20040414 Record date: 20100825 |
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Owner name: HEBEI MEITAI ELECTRONIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: INST NO.13, CHINESE ELECTRONIC SCIENCE AND TECHNOLOGY GROUP CO Effective date: 20111024 |
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Effective date of registration: 20111024 Address after: 050051 Shijiazhuang cooperation Road, Hebei, No. 113 Patentee after: HEBEI MEITAI ELECTRONIC TECHNOLOGY CO.,LTD. Address before: 38, 113, cooperation Road, 050051, Hebei, Shijiazhuang Province Patentee before: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY Group Corp. |
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