CN101445217B - On-substrate base sheet micro-processing method - Google Patents
On-substrate base sheet micro-processing method Download PDFInfo
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- CN101445217B CN101445217B CN2008102411031A CN200810241103A CN101445217B CN 101445217 B CN101445217 B CN 101445217B CN 2008102411031 A CN2008102411031 A CN 2008102411031A CN 200810241103 A CN200810241103 A CN 200810241103A CN 101445217 B CN101445217 B CN 101445217B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00039—Anchors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0108—Sacrificial polymer, ashing of organics
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Abstract
The invention discloses an on-substrate base sheet micro-processing method. The method comprises the following steps: bonding a substrate with a base sheet by using a polymer as the intermediate adhesion layer by pressure bonding to form an on-substrate base sheet; thinning the base sheet and deeply etching to form a through hole; back-filling the through hole, and deeply etching the base sheet to form an electroplating hole; electroplating metal in the electroplating hole to form a support between the substrate and the base sheet; and releasing the through hole, etching the polymer through the through hole so as to release the structure. Alternatively, the method comprises the steps of thinning the base sheet after forming the on-substrate base sheet and deeply etching to form an electroplating hole; electroplating metal in the electroplating hole to form a support between the substrate and the base sheet; deeply etching the base sheet to form a through hole; etching the polymer through the through hole; and releasing the structure. The method can achieve low-cost, high-accuracy and high-aspect-ratio 3D processing of a plurality kinds of materials, and the micromachining process compatible to the CMOS process can be used for processing a plurality kinds of MEMS devices.
Description
Technical field
The invention relates to microelectromechanical systems (MEMS) micro-processing technology, be specifically related to a kind of fine machining method of on-substrate base.
Background technology
SOI (silicon-on-insulator) technology is increasing in the effect of semiconductor and the performance of micromechanics field at present.The SOI MEMS device application of high-aspect-ratio drives in inertial sensor and static, the device technology that obtains is simple, the efficient height, the capacitor plate area is big, driving force is big, chip occupying area is little, power bearing capacity and all higher (the Siavash Pourkamali of integrated level, and Farrokh Ayazi, SOI-Based HF And VHF Single-Crystal Silicon Resonators With Sub-100Nanometer Vertical Capacitive Gap, Transducers ' 03, pp.837-840.).Yet SOI wafer cost is higher, and this has hindered the application of cost sensitivity; In addition, SOI uses silicon as unique structural material, silicon materials exist the self-conductive performance not good, shortcomings such as fracture toughness is low, performance and the range of application and the reliability of device have been restricted, need use special process to form side wall at silicon face as the application scenario of needs contact conduction covers, and work long hours and to cause contact failure (Aharon, O., Feldman, S., Nemirovsky, Y., Vertically integrated silicon single crystallineMEMS switch, Solid-State Sensors, Actuators and Microsystems, 2005.Digest of TechnicalPapers.TRANSDUCERS ' 05.The 13th International Conference on, Page (s): 1047-1050 Vol.1).In addition, silicon materials fragility is big, and not anti-large impact and big overload also can't be worked under adverse circumstances, have limited the range of application of device.
Summary of the invention
The present invention has overcome deficiency of the prior art, and a kind of fine machining method that is used to process the on-substrate base of MEMS device is provided.
Technical scheme of the present invention is:
A kind of fine machining method of on-substrate base, its step comprises:
1) uses polymer as middle adhesion layer,, substrate and substrate are bonded together, form on-substrate base by the method for pressure bonding;
2) to the substrate attenuate, and deep erosion forms through hole;
3) above-mentioned through hole is carried out backfill, once more substrate is lost the formation electroplating hole deeply;
4) plated metal in electroplating hole forms the support between substrate and substrate;
5) discharge above-mentioned through hole, polymer is carried out etching, releasing structure by this through hole.
A kind of fine machining method of on-substrate base, its step comprises:
1) uses polymer as middle adhesion layer,, substrate slice and substrate are bonded together, form on-substrate base by the method for pressure bonding;
2) substrate attenuate, and deep erosion forms electroplating hole;
3) plated metal in electroplating hole forms the support between substrate and substrate;
4) to substrate erosion deeply once more, form through hole;
5) by above-mentioned through hole polymer is carried out etching, releasing structure.
In the step 1) of above-mentioned two methods, carry out metal line at the upper surface of substrate, this metal level is positioned at the electroplating hole below of substrate.
In above-mentioned two methods, described substrate is glass, silicon, Titanium, aluminium or molybdenum.
In above-mentioned two methods, described substrate adopts a kind of in silicon, germanium, III-V compounds of group, Titanium, aluminium and the molybdenum.
In above-mentioned two methods, described polymer is photoresist SU8, BCB, Polyimide, PMMA, AZ series photoresist etc.
In above-mentioned two methods, affiliated plated metal is gold, copper, nickel, tin etc.
Compared with prior art, the invention has the beneficial effects as follows:
The fine machining method of on-substrate base of the present invention is by pressure bonding, chemically mechanical polishing, erosion and electroplating technology deeply, can on substrate, realize the three-dimensional processing of low cost, high accuracy, high-aspect-ratio of multiple material, and the micromachined of technology and CMOS process compatible can be used for processing multiple MEMS device.
As use metal as structural material, and can reduce contact resistance, improve fracture strength, increase system reliability, the device of producing can be worked under adverse circumstances.
And, on substrate, can carry out metal line, and be connected with structure sheaf by electroplating, form metal system on the substrate, can realize cross-connect and multilayer interconnection.
Description of drawings
Fig. 1 is the process chart of the embodiment of the invention one;
Fig. 2 is the process chart of the embodiment of the invention two.
The specific embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
Embodiment one, adopts the method for preparing electroplating hole behind the first etching through hole, and concrete steps are:
One, the preparation of substrate: can select for use glass, silicon, Titanium, aluminium or molybdenum as substrate, ask for an interview Fig. 1 (a).
Two, choice of substrate: substrate material can be silicon, germanium, III-V compounds of group, Titanium, aluminium or molybdenum etc.
Three, substrate slice surface deposition metal or metal compound layer 1 and layer 2, and graphical metal level 2.
Be specially, only occur in the zone of metal level 2, at first electroplated metal layer 1 can not take place, as sputter Cr 30nm at the substrate slice surface deposition in order to guarantee follow-up plating; Deposited metal 2 again, as sputter Au500nm; , shown in Fig. 1 (b), metal level 2 is graphical, asks for an interview Fig. 1 (c).
Four, polymer is bonded together substrate and substrate by the pressure bonding as middle adhesion layer.
Be specially,,,, make the polymer layer that mediates, shown in Fig. 1 (d) again with the overlapping with it placement of substrate such as the low dielectric resin BCB of thick 5 μ m at substrate deposit one layer of polymeric.
By the pressure bonding substrate and substrate are linked together, ask for an interview Fig. 1 (e).
Five, substrate attenuate, and lose deeply, through hole formed.
Be specially, the substrate attenuate by the method for chemically mechanical polishing, is thinned to suitable thickness with substrate, as 40 μ m-100 μ m, shown in Fig. 1 (f);
Then, mask is lost in the substrate surface deposit deeply, as the SU8 photoresist of thick 50 μ m or metal hard mask etc., and graphical, ask for an interview Fig. 1 (h);
By deep erosion, with the break-through of substrate etching, shown in Fig. 1 (i).
Six, remove the mask of substrate surface, the deposit filler such as the parylene backfill, is asked for an interview Fig. 1 (k).
Seven, photoetching, graphical filler film is shown in Fig. 1 (1).
Eight, by deep erosion, the break-through of substrate etching is formed electroplating hole, ask for an interview Fig. 1 (m), further remove partial polymer, shown in Fig. 1 (n).
Nine, electroplated metal layer 3 in electroplating hole such as Cu, forms and supports, and asks for an interview Fig. 1 (o).
Ten, remove the filler film of substrate surface, and discharge through hole, shown in Fig. 1 (p).
11, pass the through hole of substrate, middle polymer is carried out etching, such as the mist etching intermediate polymer BCB that adopts fluorine base gas and oxygen, releasing structure is shown in Fig. 1 (q).
12, remove metal level 1, ask for an interview Fig. 1 (r), finish the microfabrication of on-substrate base.
Embodiment two, adopt the method for preparing earlier etching through hole behind the electroplating hole, and concrete steps are:
One, the preparation of substrate: can select for use glass, silicon, Titanium, aluminium or molybdenum as substrate, shown in Fig. 2 (a).
Two, choice of substrate: substrate material can be silicon, germanium, III-V compounds of group, Titanium, aluminium or molybdenum etc.
Three, substrate slice surface deposition metal or metal compound layer 1 and layer 2, and graphical metal level 2.
Be specially, only occur in the zone of metal level 2, at first electroplated metal layer 1 can not take place, as sputter Cr 30nm at the substrate slice surface deposition in order to guarantee follow-up plating; Deposited metal 2 again, as sputter Au500nm, shown in Fig. 2 (b); Metal level 2 is graphical, asks for an interview Fig. 2 (c).
Four, polymer is bonded together substrate and substrate by the pressure bonding as middle adhesion layer.
Be specially,, shown in Fig. 2 (d),,, make the polymer layer that mediates again with the overlapping with it placement of substrate such as the BCB of thick 5 μ m at substrate deposit one layer of polymeric.By the pressure bonding substrate and substrate are linked together, ask for an interview Fig. 2 (e).
Five, substrate attenuate, and lose deeply, electroplating hole formed.
Be specially, the substrate attenuate by the method for chemically mechanical polishing, is thinned to suitable thickness with substrate, as 40 μ m-100 μ m, shown in Fig. 2 (f);
Then, mask is lost in the substrate surface deposit deeply, as the SU8 photoresist of thick 50 μ m or metal hard mask etc., and graphical, ask for an interview Fig. 2 (g);
By deep erosion,, form electroplating hole, shown in Fig. 2 (h) with the break-through of substrate etching.
Remove partial polymer, ask for an interview Fig. 2 (i).
Six, electroplated metal layer 3 in electroplating hole such as Cu, forms and supports, shown in Fig. 2 (j).
Seven, remove the mask of substrate surface, ask for an interview Fig. 2 (k).
Eight, mask is lost in the substrate surface deposit deeply, as the SU8 photoresist of thick 50 μ m or metal hard mask etc., and graphical, shown in Fig. 2 (1).
Nine,,, form through hole, shown in Fig. 2 (m) with the break-through of substrate etching by deep erosion.
Ten, remove the deep erosion mask of substrate surface, shown in Fig. 2 (n), the through hole by substrate carries out etching to middle polymer, and such as the mist etching intermediate polymer BCB that adopts fluorine base gas and oxygen, releasing structure is asked for an interview Fig. 2 (o).
11, remove metal level 1, finish the microfabrication of on-substrate base, shown in Fig. 2 (p).
Polymer both can be deposited on the substrate, also can be deposited on the substrate.
In addition, polymer of the present invention can also be photoresist SU8 except that BCB, Polyimide and PMMA and AZ series photoresist etc.
More than by specific embodiment the fine machining method of on-substrate base provided by the present invention has been described, it will be understood by those of skill in the art that in the scope that does not break away from essence of the present invention, can make certain deformation or modification to the present invention; Its preparation method also is not limited to disclosed content among the embodiment.
Claims (8)
1. the fine machining method of an on-substrate base, its step comprises:
1) the electroplated metal layer can not take place in first deposit on substrate, deposit can patterned another metal level and is graphical again on this layer, uses polymer as middle adhesion layer then, by the method for pressure bonding, substrate and substrate are bonded together, form on-substrate base;
2) to the substrate attenuate, and deep erosion forms through hole;
3) above-mentioned through hole is carried out backfill, once more substrate is carried out the logical electroplating hole that forms of deep eating thrown, adhesion layer is at the polymer in electroplating hole zone in the middle of further removing;
4) plated metal in electroplating hole forms the support between substrate and substrate;
5) discharge above-mentioned through hole, middle adhesion layer polymer is carried out etching, remove again behind the releasing structure electroplated metal layer does not take place by this through hole.
2. the method for claim 1 is characterized in that, described substrate is glass, silicon, Titanium, aluminium or molybdenum, and described substrate adopts a kind of in silicon, germanium, III-V compounds of group, Titanium, aluminium and the molybdenum.
3. the method for claim 1 is characterized in that, described polymer is photoresist SU8, Polyimide, PMMA or AZ series photoresist.
4. the method for claim 1 is characterized in that, described plated metal is gold, copper, nickel or tin.
5. the fine machining method of an on-substrate base, its step comprises:
1) the electroplated metal layer can not take place in first deposit on substrate, deposit can patterned another metal level and is graphical again on this layer, uses polymer as middle adhesion layer then, by the method for pressure bonding, substrate slice and substrate are bonded together, form on-substrate base;
2) substrate attenuate, and the logical substrate formation of deep eating thrown electroplating hole, adhesion layer is at the polymer in electroplating hole zone in the middle of further removing;
3) plated metal in electroplating hole forms the support between substrate and substrate;
4) to substrate erosion deeply once more, form through hole;
5) by above-mentioned through hole middle adhesion layer polymer is carried out etching, remove again behind the releasing structure electroplated metal layer does not take place.
6. method as claimed in claim 5 is characterized in that, described substrate is glass, silicon, Titanium, aluminium or molybdenum, and described substrate adopts a kind of in silicon, germanium, III-V compounds of group, Titanium, aluminium and the molybdenum.
7. method as claimed in claim 5 is characterized in that, described polymer is photoresist SU8, Polyimide, PMMA or AZ series photoresist.
8. method as claimed in claim 5 is characterized in that, described plated metal is gold, copper, nickel or tin.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102411031A CN101445217B (en) | 2008-12-30 | 2008-12-30 | On-substrate base sheet micro-processing method |
| PCT/CN2009/001164 WO2010081275A1 (en) | 2008-12-30 | 2009-10-20 | Micro machining method for a substrate on an underlay |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102411031A CN101445217B (en) | 2008-12-30 | 2008-12-30 | On-substrate base sheet micro-processing method |
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| Publication Number | Publication Date |
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| CN101445217A CN101445217A (en) | 2009-06-03 |
| CN101445217B true CN101445217B (en) | 2011-05-04 |
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| CN2008102411031A Expired - Fee Related CN101445217B (en) | 2008-12-30 | 2008-12-30 | On-substrate base sheet micro-processing method |
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| CN (1) | CN101445217B (en) |
| WO (1) | WO2010081275A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101445217B (en) * | 2008-12-30 | 2011-05-04 | 北京大学 | On-substrate base sheet micro-processing method |
| US20130115754A1 (en) * | 2011-11-07 | 2013-05-09 | Jing Chen | Micro machining method for a substrate on an underlay |
| CN102424355A (en) * | 2011-11-16 | 2012-04-25 | 中国科学院上海微系统与信息技术研究所 | Method for increasing adhesion between BCB and Au |
| CN103253628B (en) * | 2013-05-06 | 2015-07-29 | 北京大学 | A kind of preparation of the minute metallic part based on deep etching technology and assembly method |
| CN104228304A (en) * | 2013-06-21 | 2014-12-24 | 无锡华润上华半导体有限公司 | Interlayer adhesion method applied to micro-machining manufacturing process |
| CN106158512A (en) * | 2015-04-08 | 2016-11-23 | 北京大学 | A kind of metal molybdenio microrelay and preparation method thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5658698A (en) * | 1994-01-31 | 1997-08-19 | Canon Kabushiki Kaisha | Microstructure, process for manufacturing thereof and devices incorporating the same |
| JPH08199389A (en) * | 1995-01-27 | 1996-08-06 | Nikon Corp | Electroplating and fine pattern formation |
| US6905613B2 (en) * | 2001-07-10 | 2005-06-14 | Honeywell International Inc. | Use of an organic dielectric as a sacrificial layer |
| JP2005028504A (en) * | 2003-07-11 | 2005-02-03 | Sony Corp | Micro electromechanical system (mems) element and method for manufacturing the same |
| JP2008126375A (en) * | 2006-11-22 | 2008-06-05 | Sumitomo Electric Ind Ltd | Manufacturing method for three-dimensional microstructure |
| JP2008284656A (en) * | 2007-05-18 | 2008-11-27 | Toyota Motor Corp | Manufacturing method for structure |
| CN101143699A (en) * | 2007-11-08 | 2008-03-19 | 上海交通大学 | Universal film material graphics method |
| CN101445217B (en) * | 2008-12-30 | 2011-05-04 | 北京大学 | On-substrate base sheet micro-processing method |
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- 2008-12-30 CN CN2008102411031A patent/CN101445217B/en not_active Expired - Fee Related
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| CN101445217A (en) | 2009-06-03 |
| WO2010081275A1 (en) | 2010-07-22 |
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