CN106158512A - A kind of metal molybdenio microrelay and preparation method thereof - Google Patents
A kind of metal molybdenio microrelay and preparation method thereof Download PDFInfo
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- CN106158512A CN106158512A CN201510163239.5A CN201510163239A CN106158512A CN 106158512 A CN106158512 A CN 106158512A CN 201510163239 A CN201510163239 A CN 201510163239A CN 106158512 A CN106158512 A CN 106158512A
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- Prior art keywords
- microrelay
- metal
- molybdenio
- cantilever beam
- contact
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H49/00—Apparatus or processes specially adapted to the manufacture of relays or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H50/00—Details of electromagnetic relays
- H01H50/005—Details of electromagnetic relays using micromechanics
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to a kind of metal molybdenio microrelay and preparation method thereof.This metal molybdenio microrelay, including the single-ended clamped cantilever beam as elastic recovery structure, connecting the electrostatic drive comb structure of this single-ended clamped cantilever beam, and the contact near this single-ended clamped cantilever beam one end, the material of described single-ended clamped cantilever beam, comb structure and contact is metal molybdenum.The present invention using metal molybdenum as body design of material electrostatic drive microrelay, not only can solve contact resistance problem first, it is also possible to reduces thrashing.Metal molybdenio microrelay has the highest reliability, can be widely applied to consumer electronics, health care, auto industry, industrial automation and robot, Aero-Space and Internet of Things field etc..
Description
Technical field
The invention belongs to relay technical field, be specifically related to a kind of metal molybdenio microrelay and preparation method thereof, it is possible to very well
Ground solves contact resistance problem, improves the reliability of microrelay.
Background technology
Relay is a kind of Automatic Control Component of switching circuit connecting and disconnecting state, and function mainly has expansion span of control, puts
Big sensitivity, remote control and monitoring signal etc., be widely used in the electricity such as communication, computer, automobile, Industry Control, household electrical appliance
In Ore-controlling Role, it it is one of requisite base components of circuit control system.In the equipment such as aerospace vehicle, military equipment,
Also according to needing to use the relay of all size, this occasion to their requirement except Guan Bi time electric current is big, contact impedance is little,
Outside leakage current is little, the most also require that it is lightweight, volume is little, life-span length, fast response time, reliability are high.
Tradition microrelay uses silicon as structural material, and metal, as contact portion, exists processing technique complicated low with reliability
Etc. problem.Owing to using the materials such as silicon as structural material, the electric conductivity of material own is the best, so needing extra at contact surface
Form layer of metal, such as use parcel plating, sputter, evaporate, or use the special process such as Shadow Mask, but all increase
Add the complexity of technique, and worked long hours and contact may will be caused to lose efficacy, cannot turn off including what contact point fusion caused
Even insulating with contacting the contact resistance surge caused of degenerating, when transmitting big electric current, Problem of Failure is the most serious.It addition, silicon
Inherent defect Deng material itself so that it extensively cannot be applied in the adverse circumstances such as high temperature, large impact high overload, corrosivity.
Summary of the invention
The present invention is directed to the problems referred to above, it is provided that a kind of metal molybdenio microrelay and preparation method thereof, metal molybdenum has relatively low electricity
The good characteristics such as resistance rate, higher Young's modulus and higher fusing point, use metal molybdenum to make microrelay and have a plurality of advantages:
During Guan Bi, electric current is big, contact impedance is little, leakage current is little, volume is little, life-span length, high reliability.
The technical solution used in the present invention is as follows:
A kind of metal molybdenio microrelay, including the single-ended clamped cantilever beam as elastic recovery structure, connects this single-ended clamped outstanding
The electrostatic drive comb structure of arm beam, and the contact near this single-ended clamped cantilever beam one end, described single-ended clamped cantilever beam,
The material of comb structure and contact is metal molybdenum.The i.e. whole microrelay structure of the present invention all realizes by metal molybdenum.
Further, described single-ended clamped cantilever beam, comb structure and contact are by using ICP deep etching method to enter Mo
Row etching shapes.
Further, described contact is point-face contact with contacting of described single-ended clamped cantilever beam.
Further, a length of 500～2000 μm of described single-ended clamped cantilever beam, the comb tooth spacing of described comb structure is 3
μm～7 μm.
A kind of method preparing above-mentioned metal molybdenio microrelay, comprises the steps:
1) spin coating bonding glue on metal molybdenum substrate；
2) substrate is bonded with the metal molybdenum sheet being used for being formed microrelay structure；
3) metal molybdenum sheet surface deposition hard mask layer after bonding；
4) spin coating photoresist on hard mask layer, carries out litho pattern definition；
5) for mask, hard mask layer is carried out dry etching with photoresist, it is achieved figure shifts；
6) the ICP deep etching of metal molybdenum is carried out with hard mask layer for mask；
7) device after etching is carried out structure release, obtain metal molybdenio microrelay.
Further, step 2) material of described hard mask layer is aluminum, uses sputtering or evaporation mode to deposit.
Compared with prior art, beneficial effects of the present invention is as follows:
The present invention using metal molybdenum as body design of material electrostatic drive microrelay, not only can solve contact resistance and asks first
Topic, it is also possible to reduce thrashing.Tradition microrelay uses silicon as structural material, and metal is as contact portion, the present invention
The most all use metal molybdenum material.Compared with the materials such as silicon, metal molybdenum not only has good electric conductivity, also has and well prolongs
Malleability and impact strength, its fracture toughness generally high two orders of magnitude than silicon materials, use metal molybdenum to make mobile contact zero
Its reliability of part is higher.The maturation of metal material ICP deep etching technology also ensure that use metal molybdenum makes microrelay work simultaneously
Feasibility in skill.Metal molybdenio microrelay has the highest reliability, can be widely applied to consumer electronics, health care,
Auto industry, industrial automation and robot, Aero-Space and Internet of Things field etc..
Accompanying drawing explanation
Fig. 1 is the metal molybdenio microrelay structure chart of the present invention.
Fig. 2 be length of cantilever 500 μm, comb tooth spacing be the microrelay domain of 3 μm.
Fig. 3 be length of cantilever 500 μm, comb tooth spacing be the microrelay domain of 5 μm.
Fig. 4 be length of cantilever 500 μm, comb tooth spacing be the microrelay domain of 7 μm.
Fig. 5 be length of cantilever 1000 μm, comb tooth spacing be the microrelay domain of 3 μm.
Fig. 6 be length of cantilever 1000 μm, comb tooth spacing be the microrelay domain of 5 μm.
Fig. 7 be length of cantilever 1000 μm, comb tooth spacing be the microrelay domain of 7 μm.
Fig. 8 be length of cantilever 1500 μm, comb tooth spacing be the microrelay domain of 3 μm.
Fig. 9 be length of cantilever 1500 μm, comb tooth spacing be the microrelay domain of 5 μm.
Figure 10 be length of cantilever 1500 μm, comb tooth spacing be the microrelay domain of 7 μm.
Figure 11 be length of cantilever 2000 μm, comb tooth spacing be the microrelay domain of 3 μm.
Figure 12 be length of cantilever 2000 μm, comb tooth spacing be the microrelay domain of 5 μm.
Figure 13 be length of cantilever 2000 μm, comb tooth spacing be the microrelay domain of 7 μm.
Figure 14 is the preparation technology flow chart of metal molybdenio microrelay.
Detailed description of the invention
Below by specific embodiments and the drawings, the present invention will be further described.
The metal molybdenio microrelay of the present embodiment uses typical laterally driven mode, as shown in Figure 1.With single-ended clamped cantilever
Beam does elastic recovery structure, and contact portion have employed the scheme of point-face contact.Existing thickness is the molybdenum sheet of 30 microns, it is contemplated that
The horizontal undercutting (1:4) of molybdenum sheet, cantilever beam and comb structure suitably relax, in the domain of design, cantilever beam and comb
Width be 14.5 microns, the Design of length of cantilever beam 4 groups, respectively 500 μm, 1000 μm, 1500 μm, 2000
μm, comb tooth spacing takes 3 μm, 5 μm, 7 μm respectively.Design the most altogether 12 kinds of metal molybdenum microrelay domains, as
Shown in Fig. 2～Figure 13.
Figure 14 gives the process chart of preparation metal molybdenum microrelay, is described as follows each step:
1, standby sheet: preparing 30 microns of thick metal molybdenum sheets and experiment common metal molybdenum sheet, wherein experiment common metal molybdenum sheet is as lining
The end.Clean molybdenum sheet.
2, spin coating: spin coating bonding glue on metal molybdenum sheet substrate, as shown in (a) figure in Figure 14.Bonding glue can use waferbond
Bonding glue etc..
3, bonding: metal molybdenum sheet substrate and 30 microns of thick molybdenum sheets are bonded, as shown in (b) figure in Figure 14.Permissible
Use the methods such as wafer bonding that molybdenum sheet is bonded.
4, deposition mask layer: molybdenum sheet surface after bonding deposits one layer of aluminum and sputters or evaporation mode as mask layer, employing,
As shown in (c) figure in Figure 14.In addition to aluminum, the present invention can also use the mask layer of the material such as nickel, silicon dioxide.Mask layer
Thickness be preferably 0.5 μm～2 μm.
5, spin coating photoresist: spin coating one layer photoetching glue, carries out litho pattern definition, such as (d) figure and (e) figure institute in Figure 14
Show.
6, aluminum etching: for mask, aluminum film is carried out dry etching with photoresist, carry out figure transfer, such as (f) figure institute in Figure 14
Show.Then photoresist is removed.
7, molybdenum etching: carry out ICP (inductively coupled plasma) deep etching of metal molybdenum with aluminum for mask, as in Figure 14 (g)
Shown in figure.
8, structure release: the device after etching is carried out structure release, as shown in (h) figure in Figure 14, obtains microrelay.
Above example is only limited in order to technical scheme to be described, those of ordinary skill in the art can
Technical scheme is modified or equivalent, without departing from the spirit and scope of the present invention, the guarantor of the present invention
The scope of protecting should be as the criterion with described in claims.
Claims (7)
1. a metal molybdenio microrelay, it is characterised in that include the single-ended clamped cantilever beam as elastic recovery structure, connecting should
The electrostatic drive comb structure of single-ended clamped cantilever beam, and the contact near this single-ended clamped cantilever beam one end, described single-ended
The material of clamped cantilever beam, comb structure and contact is metal molybdenum.
2. metal molybdenio microrelay as claimed in claim 1, it is characterised in that: described single-ended clamped cantilever beam, comb structure and
Contact performs etching shaping by using ICP deep etching method to Mo.
3. metal molybdenio microrelay as claimed in claim 1, it is characterised in that: described contact and described single-ended clamped cantilever beam
Contact is point-face contact.
4. metal molybdenio microrelay as claimed in claim 1, it is characterised in that: described single-ended clamped cantilever beam a length of
500～2000 μm, the comb tooth spacing of described comb structure is 3 μm～7 μm.
5. prepare the method for metal molybdenio microrelay described in claim 1 for one kind, it is characterised in that comprise the steps:
1) spin coating bonding glue on metal molybdenum substrate；
2) substrate is bonded with the metal molybdenum sheet being used for being formed microrelay structure；
3) metal molybdenum sheet surface deposition hard mask layer after bonding；
4) spin coating photoresist on hard mask layer, carries out litho pattern definition；
5) for mask, hard mask layer is carried out dry etching with photoresist, it is achieved figure shifts；
6) the ICP deep etching of metal molybdenum is carried out with hard mask layer for mask；
7) device after etching is carried out structure release, obtain metal molybdenio microrelay.
6. method as claimed in claim 5, it is characterised in that: step 2) material of described hard mask layer is aluminum, nickel or titanium dioxide
Silicon, the thickness of hard mask layer is preferably 0.5 μm～2 μm.
7. method as claimed in claim 6, it is characterised in that: use sputtering or evaporation mode to deposit described hard mask layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510163239.5A CN106158512A (en) | 2015-04-08 | 2015-04-08 | A kind of metal molybdenio microrelay and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510163239.5A CN106158512A (en) | 2015-04-08 | 2015-04-08 | A kind of metal molybdenio microrelay and preparation method thereof |
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| CN106158512A true CN106158512A (en) | 2016-11-23 |
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| CN201510163239.5A Pending CN106158512A (en) | 2015-04-08 | 2015-04-08 | A kind of metal molybdenio microrelay and preparation method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060087390A1 (en) * | 2004-10-21 | 2006-04-27 | Fujitsu Component Limited | Electrostatic relay |
| US20070024390A1 (en) * | 2005-07-29 | 2007-02-01 | Samsung Elctronics Co., Ltd. | Vertical comb actuator radio frequency micro-electro-mechanical system switch |
| CN101445217A (en) * | 2008-12-30 | 2009-06-03 | 北京大学 | On-substrate base sheet micro-processing method |
| CN102417156A (en) * | 2011-11-15 | 2012-04-18 | 北京大学 | Method for etching metal molybdenum material |
| CN202434427U (en) * | 2011-11-07 | 2012-09-12 | 齐齐哈尔大学 | Permanent magnet bi-stable micro-relay |
-
2015
- 2015-04-08 CN CN201510163239.5A patent/CN106158512A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060087390A1 (en) * | 2004-10-21 | 2006-04-27 | Fujitsu Component Limited | Electrostatic relay |
| US20070024390A1 (en) * | 2005-07-29 | 2007-02-01 | Samsung Elctronics Co., Ltd. | Vertical comb actuator radio frequency micro-electro-mechanical system switch |
| CN101445217A (en) * | 2008-12-30 | 2009-06-03 | 北京大学 | On-substrate base sheet micro-processing method |
| CN202434427U (en) * | 2011-11-07 | 2012-09-12 | 齐齐哈尔大学 | Permanent magnet bi-stable micro-relay |
| CN102417156A (en) * | 2011-11-15 | 2012-04-18 | 北京大学 | Method for etching metal molybdenum material |
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Application publication date: 20161123 |
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