CN106024379A - Beam lead capacitor processing method - Google Patents
Beam lead capacitor processing method Download PDFInfo
- Publication number
- CN106024379A CN106024379A CN201610330701.0A CN201610330701A CN106024379A CN 106024379 A CN106024379 A CN 106024379A CN 201610330701 A CN201610330701 A CN 201610330701A CN 106024379 A CN106024379 A CN 106024379A
- Authority
- CN
- China
- Prior art keywords
- nickel plate
- beam lead
- electric capacity
- lead electric
- processing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention relates to a beam lead capacitor processing method, and the method comprises the following steps: 1, providing a nickel plate, and forming a TiW metal film on the nickel plate through employing a sputter coating method; 2, forming a polyimide dielectric film on the nickel plate through employing a photoetching method; 3, forming a TiW/Au metal layer structure through employing the sputter coating method, and covering the polyimide dielectric film; 4, forming the upper and lower electrodes of a beam lead capacitor through employing a photoetching electroplating method; 5, selectively etching the nickel plate through employing the photoetching method, maintaining the mechanical supporting action of the nickel plate, and enabling the upper and lower electrodes to form circuit break. The invention aims at providing the method which is simpler in processing. Compared with a method provided by a foreign manufacturer, the method improves the production efficiency, reduces the cost, and is worthy of polularization in production.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to the processing side of a kind of beam lead electric capacity
Method.
Background technology
The beam lead electric capacity primary structure form used in microwave module assembling is: provide machinery one
On the base material supported, generate bottom electrode, medium and upper electrode respectively, it is generally the case that upper and lower electricity
Pole all uses precious metal material gold, and dielectric material selects according to different needs.Simultaneously in order to just
In assembling, upper and lower electrode both sides to the left and right are drawn, it is simple to be bonded, the subsequent operation such as interconnection.
The AEROFLEX company of the U.S. produce the most in a large number beam lead capacitor packages and captured global greatly
Market segment.The beam lead electric capacity that the AEROFLEX company of the U.S. produces, uses silicon-based semiconductor
Technique makes, and owing to silicon etching is extremely difficult, needs semiconductor manufacturing equipment is carried out big throwing
Money, its course of processing is complicated, causes production cost high.Because domestic enterprise does not have batch production beam
The working ability of formula lead capacitance product, so make in a large number at present during Microwave Active parts assemble
Beam lead electric capacity all external import modes obtain.Therefore, invent simpler, it is achieved property
Higher, the beam lead electric capacity processing method that cost is lower is particularly important.
Summary of the invention
The invention aims to overcome above-mentioned weak point present in prior art, it is provided that one
The processing method planting beam lead electric capacity.
For solving the problems referred to above, the processing method of a kind of beam lead electric capacity that the present invention proposes, including
Following steps:
Step one: arrange a nickel plate, uses sputtering film coating method to form one layer of TiW in described nickel plate
Metal film；
Step 2: use the method for photoetching to form a strata acid imide deielectric-coating in described nickel plate；
Step 3: use sputtering film coating method to form one layer of TiW/Au metal-layer structure, covers described poly-
Acid imide deielectric-coating；
Step 4: use photoetching electro-plating method to form the upper and lower electrode of described beam lead electric capacity；
Step 5: use the method choice of photoetching to etch described nickel plate, retain the machinery of described nickel plate
Supporting role, and make described upper and lower electrode form open circuit.
2, in technique scheme, in described step one, beam lead electric capacity entirety uses photoetching work
Skill is made.
3, in technique scheme, in described step one, nickel plate thickness range is: 0.1mm～1mm.
4, in technique scheme, in described step 2, the polyimide media film that nickel plate is formed
It is to cover whole nickel plate by the form of rotary coating, then the figure needed for being retained by lithography operations.
5, in technique scheme, in described step 3, the metal-layer structure that nickel plate is formed is
TiW-Au, wherein titanium: tungsten mass ratio is 1: 9.
6, in technique scheme, described step 2, in three, four, the concrete steps of photoetching include:
On substrate gluing, front baking, expose, develop, after bake, etch, remove photoresist.
7, in technique scheme, described step 2, in three, four, the photoetching used during gluing
Glue is RZJ-390 type positive photoresist, its main component be mass fraction be 12～25% phenolic resin,
Solvent composition is the propylene glycol monomethyl ether acetate that mass fraction is more than or equal to 75%.
8, in technique scheme, in described step 4, it is gold that plating thickeies metal, gold conductor layer
Thickness is 1～10 μm.
9, in technique scheme, in described step 4, plating uses direct current electrode position, electric current
Density is 1～10mA/cm2, the main component of electroplating solution is gold potassium cyanide.
The present invention has the advantages that and advantage compared with prior art:
1, the present invention instead of silica-based support with metal substrate support so that substrate etching difficulty drops significantly
Low；Meanwhile, change the Multiple depositions in silicon circuit, multilamellar etching technics, use secondarily etched i.e.
Can complete, technological process is greatly reduced, improve working (machining) efficiency.
2, the processing method that it is an object of the invention to provide a kind of beam lead electric capacity, for existing at present
A large amount of commonly used external import modes of beam lead electric capacity used during the assembling of Microwave Active parts
The present situation obtained, it is achieved that the production domesticization of this key element；And compared with foreign vendor, improve
Production efficiency, reduces cost, is worth promoting aborning.
Accompanying drawing explanation
Fig. 1 is that the present invention uses sputtering film coating method to form one layer of TiW metal film in described nickel plate
Overall structure schematic diagram；
Fig. 2 is that the present invention uses the method for photoetching to form a strata acyl Asia in the nickel plate being coated with TiW layer
Overall structure schematic diagram after amine deielectric-coating；
Fig. 3 is the entirety after the present invention uses sputtering film coating method to form one layer of TiW/Au metal-layer structure
Structural representation；
Fig. 4 is after the present invention uses photoetching electro-plating method to form the upper and lower electrode of beam lead electric capacity
Overall structure schematic diagram；
Fig. 5 is the method choice etching nickel plate that the present invention uses photoetching, retains the mechanical support of nickel plate
Effect, and make final electric capacity overall structure schematic diagram after the formation open circuit of upper and lower electrode.
In figure below: 1-nickel plate；2-TiW metal film；3-polyimide film；4-gold conductor layer.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail:
Embodiment one
The processing method of a kind of beam lead electric capacity that the present invention provides, specifically includes that the first step, choosing
Take nickel plate 1 thick for 0.1mm as mechanical support, and use sputtering film coating method to form one in nickel plate
Layer TiW metal film 2, structural representation is as shown in Figure 1；Second step, by the form of rotary coating
Polyimide media film is covered the 3 whole nickel plate of lid 1, then the figure needed for being retained by lithography operations,
Structural representation is as shown in Figure 2；3rd step, uses sputtering film coating method to form one layer of TiW/Au gold
Belonging to Rotating fields, cover existing polyimide media film 3, the metal-layer structure that nickel plate is formed is
TiW-Au, structural representation is as it is shown on figure 3, wherein titanium: tungsten mass ratio is 1: 9；4th step, adopts
It is used in gluing on substrate, front baking, exposes, develop, after bake, etch, remove photoresist, then use electric current
Density is 1mA/cm2DC current, electroplate the layer gold of 1 μ m-thick with gold potassium cyanide for electroplating solution
As the method for gold conductor layer 4, forming the upper and lower electrode of beam lead electric capacity, structural representation is such as
Shown in Fig. 4, the photoresist wherein used during gluing is RZJ-390 type positive photoresist, and it is main
Composition be mass fraction be the phenolic resin of 12%, solvent composition be mass fraction be the propylene glycol of 88%
Monomethyl ether acetate.Finally use on substrate gluing, front baking, expose, develop, after bake, etching,
The step removed photoresist is retaining the mechanical support effect of nickel plate, and makes upper and lower electrode form the premise of open circuit
Lower selective etch nickel plate, structural representation is as shown in Figure 5.
Embodiment two
The processing method of a kind of beam lead electric capacity that the present invention provides, specifically includes that the first step, choosing
Take nickel plate 1 thick for 0.5mm as mechanical support, and use sputtering film coating method to form one in nickel plate
Layer TiW metal film 2, structural representation is as shown in Figure 1；Second step, by the form of rotary coating
Polyimide media film is covered the 3 whole nickel plate of lid 1, then the figure needed for being retained by lithography operations,
Structural representation is as shown in Figure 2；3rd step, uses sputtering film coating method to form one layer of TiW/Au gold
Belonging to Rotating fields, cover existing polyimide media film 3, the metal-layer structure that nickel plate is formed is
TiW-Au, structural representation is as it is shown on figure 3, wherein titanium: tungsten mass ratio is 1: 9；4th step, adopts
It is used in gluing on substrate, front baking, exposes, develop, after bake, etch, remove photoresist, then use electric current
Density is 5mA/cm2DC current, electroplate the layer gold of 5 μ m-thick with gold potassium cyanide for electroplating solution
As the method for conductor layer 4, form the upper and lower electrode of beam lead electric capacity, structural representation such as figure
Shown in 4, the photoresist wherein used during gluing is RZJ-390 type positive photoresist, and it mainly becomes
Point be mass fraction be the phenolic resin of 18%, solvent composition be mass fraction be the propylene glycol list of 82%
Methyl ether acetate.Finally use on substrate gluing, front baking, expose, develop, after bake, etching,
The step removed photoresist is retaining the mechanical support effect of nickel plate, and makes upper and lower electrode form the premise of open circuit
Lower selective etch nickel plate, structural representation is as shown in Figure 5.
Embodiment three
The processing method of a kind of beam lead electric capacity that the present invention provides, specifically includes that the first step,
Choose nickel plate 1 thick for 1mm as mechanical support, and use sputtering film coating method to form one in nickel plate
Layer TiW metal film 2, structural representation is as shown in Figure 1；Second step, by the form of rotary coating
Polyimide media film is covered the 3 whole nickel plate of lid 1, then the figure needed for being retained by lithography operations,
Structural representation is as shown in Figure 2；3rd step, uses sputtering film coating method to form one layer of TiW/Au gold
Belonging to Rotating fields, cover existing polyimide media film 3, the metal-layer structure that nickel plate is formed is
TiW-Au, structural representation is as it is shown on figure 3, wherein titanium: tungsten mass ratio is 1: 9；4th step, adopts
It is used in gluing on substrate, front baking, exposes, develop, after bake, etch, remove photoresist, then use electric current
Density is 10mA/cm2DC current, electroplate the gold of 10 μ m-thick with gold potassium cyanide for electroplating solution
Layer, as the method for conductor layer 4, forms the upper and lower electrode of beam lead electric capacity, and structural representation is such as
Shown in Fig. 4, the photoresist wherein used during gluing is RZJ-390 type positive photoresist, and it is main
Composition be mass fraction be the phenolic resin of 25%, solvent composition be mass fraction be the propylene glycol of 75%
Monomethyl ether acetate.Finally use on substrate gluing, front baking, expose, develop, after bake, etching,
The step removed photoresist is retaining the mechanical support effect of nickel plate, and makes upper and lower electrode form the premise of open circuit
Lower selective etch nickel plate, structural representation is as shown in Figure 5.
Claims (9)
1. the processing method of a beam lead electric capacity, it is characterised in that comprise the following steps:
Step one: arrange a nickel plate, uses sputtering film coating method to form one layer of TiW in described nickel plate
Metal film；
Step 2: use the method for photoetching to form a strata acid imide deielectric-coating in described nickel plate；
Step 3: use sputtering film coating method to form one layer of TiW/Au metal-layer structure, covers described poly-
Acid imide deielectric-coating；
Step 4: use photoetching electro-plating method to form the upper and lower electrode of described beam lead electric capacity；
Step 5: use the method choice of photoetching to etch described nickel plate, retain the machinery of described nickel plate
Supporting role, and make described upper and lower electrode form open circuit.
A kind of processing method of beam lead electric capacity, it is characterised in that
Described beam lead electric capacity entirety uses photoetching process to be made.
The processing method of a kind of beam lead electric capacity, it is characterised in that institute
Stating in step one, described nickel plate thickness range is: 0.1mm～1mm.
A kind of processing method of beam lead electric capacity, it is characterised in that
In described step 2, the polyimide media film that described nickel plate is formed is the form by rotary coating
Cover whole nickel plate, then the figure needed for being retained by lithography operations.
A kind of processing method of beam lead electric capacity, it is characterised in that
In described step 3, the metallic diaphragm structure that described nickel plate is formed is TiW-Au, wherein titanium: tungsten matter
Amount ratio is 1: 9.
A kind of processing method of beam lead electric capacity, it is characterised in that
Described step 2, in three, four, the concrete steps of described photoetching include: on substrate gluing, front baking,
Exposure, development, after bake, etch, remove photoresist.
The processing method of a kind of beam lead electric capacity, it is characterised in that institute
Stating step 2, in three, four, the photoresist used during described gluing is RZJ-390 type positive-tone photo
Glue, its main component be mass fraction be 12～25% phenolic resin, solvent composition is that mass fraction is big
In or equal to 75% propylene glycol monomethyl ether acetate.
The processing method of a kind of beam lead electric capacity, its feature exists
In, in described step 4, it is gold that described plating thickeies metal, and the thickness of gold is 1～10 μm.
The processing method of a kind of beam lead electric capacity, it is characterised in that institute
Stating in step 4, described plating uses direct current electrode position, and electric current density is 1～10mA/cm2, electricity
The main component of plating liquor is gold potassium cyanide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610330701.0A CN106024379B (en) | 2016-05-12 | 2016-05-12 | A kind of processing method of beam lead capacitance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610330701.0A CN106024379B (en) | 2016-05-12 | 2016-05-12 | A kind of processing method of beam lead capacitance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106024379A true CN106024379A (en) | 2016-10-12 |
| CN106024379B CN106024379B (en) | 2018-11-06 |
Family
ID=57098454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610330701.0A Active CN106024379B (en) | 2016-05-12 | 2016-05-12 | A kind of processing method of beam lead capacitance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106024379B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601480B (en) * | 2017-02-24 | 2018-11-20 | 中国振华集团云科电子有限公司 | A kind of high-temperature high-frequency polyimides chip thin film capacitor and its manufacture craft |
| CN114121494A (en) * | 2021-11-30 | 2022-03-01 | 上海交通大学 | 3D multilayer high-dielectric-constant high-power-density supercapacitor and micromachining method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3443311A (en) * | 1966-10-31 | 1969-05-13 | Bell Telephone Labor Inc | Thin film distributed rc network |
| JPS54131761A (en) * | 1978-04-03 | 1979-10-13 | Nippon Electric Co | Method of producing thin film capacitor |
| US4982308A (en) * | 1987-08-24 | 1991-01-01 | Marconi Electronic Devices Limited | Capacitors |
| CN1787171A (en) * | 2004-12-09 | 2006-06-14 | 中国科学院微电子研究所 | Method for enhancing metal-medium-metal structural capacity performance |
| JP2006319023A (en) * | 2005-05-11 | 2006-11-24 | Toppan Printing Co Ltd | Method of forming capacitor for wiring board with built-in part |
| CN104332330A (en) * | 2014-10-10 | 2015-02-04 | 中国电子科技集团公司第四十一研究所 | Method for manufacturing thin film capacitor with anodic oxidation film as dielectric layer |
-
2016
- 2016-05-12 CN CN201610330701.0A patent/CN106024379B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3443311A (en) * | 1966-10-31 | 1969-05-13 | Bell Telephone Labor Inc | Thin film distributed rc network |
| JPS54131761A (en) * | 1978-04-03 | 1979-10-13 | Nippon Electric Co | Method of producing thin film capacitor |
| US4982308A (en) * | 1987-08-24 | 1991-01-01 | Marconi Electronic Devices Limited | Capacitors |
| CN1787171A (en) * | 2004-12-09 | 2006-06-14 | 中国科学院微电子研究所 | Method for enhancing metal-medium-metal structural capacity performance |
| JP2006319023A (en) * | 2005-05-11 | 2006-11-24 | Toppan Printing Co Ltd | Method of forming capacitor for wiring board with built-in part |
| CN104332330A (en) * | 2014-10-10 | 2015-02-04 | 中国电子科技集团公司第四十一研究所 | Method for manufacturing thin film capacitor with anodic oxidation film as dielectric layer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601480B (en) * | 2017-02-24 | 2018-11-20 | 中国振华集团云科电子有限公司 | A kind of high-temperature high-frequency polyimides chip thin film capacitor and its manufacture craft |
| CN114121494A (en) * | 2021-11-30 | 2022-03-01 | 上海交通大学 | 3D multilayer high-dielectric-constant high-power-density supercapacitor and micromachining method |
| CN114121494B (en) * | 2021-11-30 | 2023-04-18 | 上海交通大学 | 3D multilayer high-dielectric-constant high-power-density supercapacitor and micromachining method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106024379B (en) | 2018-11-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5606454B2 (en) | Silicon solar cell | |
| CN101743639B (en) | Contact structure for a semiconductor component and a method for production thereof | |
| CN106575677B (en) | The photovoltaic cell for being used to form the method for photovoltaic cell and being formed according to this method | |
| CN105264656B (en) | Carry the circuit chip and its manufacturing method of secondary cell | |
| CN106298626A (en) | A kind of graphic plating method for microstrip circuit | |
| CN102723259A (en) | UV-LIGA (Ultraviolet-Lithografie, Galvanoformung, Abformung) method for manufacturing multi layers of mini-type inductance coils on silicon substrate | |
| CN104037162A (en) | Wafer-level package mitigated undercut | |
| CN106024379A (en) | Beam lead capacitor processing method | |
| CN104185410B (en) | Electro-magnetic shielding cover based on micro- metal grill and preparation method thereof | |
| CN102466967A (en) | Manufacture method of diffractive optical element with large aspect ratio | |
| KR20150056245A (en) | a method for forming conductive electrode patterns and a method for manufacturing colar cells comprising thereof | |
| CN102376629B (en) | Method for realizing through-silicon-via interconnection by suspension photoresist | |
| CN102332351B (en) | Manufacturing method of micro-variable capacitor for micro-nanometer measurement | |
| CN103258747A (en) | Method for carrying out aluminium wire bonding on gold conductor film circuit | |
| Roh et al. | Cu filling of TSV using various current forms for three‐dimensional packaging application | |
| CN105280727A (en) | Microwave internal matching power transistor matching capacitor and manufacturing method thereof | |
| US10008478B2 (en) | Fabricating method for wafer-level packaging | |
| KR20090006962A (en) | Substrate a built-in rechargeable secondary battery and semiconductor having the same | |
| CN106252315A (en) | Encapsulating structure and manufacture method thereof | |
| CN107177866A (en) | The method that micro- radio frequency T-shaped power splitter is prepared in metallic substrates | |
| CN113130675A (en) | Thin-film solar cell structure based on different scribing lines and preparation method thereof | |
| US20140083507A1 (en) | Dye-sensitized solar cell | |
| CN111864064A (en) | Three-dimensional capacitor | |
| CN206711763U (en) | A kind of ultra-thin impulse capacitor | |
| CN104319211A (en) | Electrode plate manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |