CN105280727A - Microwave internal matching power transistor matching capacitor and manufacturing method thereof - Google Patents
Microwave internal matching power transistor matching capacitor and manufacturing method thereof Download PDFInfo
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- CN105280727A CN105280727A CN201510747914.9A CN201510747914A CN105280727A CN 105280727 A CN105280727 A CN 105280727A CN 201510747914 A CN201510747914 A CN 201510747914A CN 105280727 A CN105280727 A CN 105280727A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 118
- 239000002184 metal Substances 0.000 claims abstract description 118
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 55
- 238000000605 extraction Methods 0.000 claims description 38
- 238000001259 photo etching Methods 0.000 claims description 17
- 229910052594 sapphire Inorganic materials 0.000 claims description 17
- 239000010980 sapphire Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 230000008719 thickening Effects 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 238000001465 metallisation Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000003518 caustics Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
- H01L21/4889—Connection or disconnection of other leads to or from wire-like parts, e.g. wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
Abstract
The invention discloses a microwave internal matching power transistor matching capacitor and a manufacturing method thereof, and relates to the technical field of capacitors and manufacturing methods thereof. The capacitor comprises an MIM upper capacitor assembly on which an internal matching capacitor front process is implemented. The MIM upper capacitor assembly comprises a substrate, the upper surface of the substrate is provided with a metal lower electrode, the substrate is provided with a lead-out through hole, the lower surface of the substrate is provided with a metal lower electrode lead-out electrode, and a portion of the metal lower electrode lead-out electrode passes through the lead-out through hole to be electrically connected with the metal lower electrode. The capacitor has the characteristics of resistance to high temperature, good frequency performance, small size, simple manufacturing process, and low cost.
Description
Technical field
The present invention relates to electric capacity and preparation method thereof technical field, particularly relate to mesh power transistor matching capacitance and preparation method thereof in a kind of microwave.
Background technology
After avoiding adding interior matching network, produce the overall performance generation adverse influence of excessive loss to device, in requiring, matching capacitance and interior coupling inductance must be little to the loss of microwave.Along with the raising of operating frequency, the inductance value of bonding wire also can increase, lossy microwave will strengthen, unfavorable to the frequency performance of microwave device, especially to the base stage bonding wire of the source ground line of the field-effect transistor of common source configuration and the bipolar transistor of common base structure, its length is very large to wielding influence of microwave property.For reducing the inductance value of ground lead as far as possible, application number be CN201310126712.3 patent document discloses a kind of MIM capacitor and preparation method thereof (described capacitance structure as shown in Figure 1), its method adopting grounding electrode to draw from upper surface realizes the ground connection of capacitance metal electrode by bonding wire, this bonding wire, along with the raising of device operating frequencies, will be more remarkable on the impact of the microwave property of device.Unfavorable to the frequency performance promoting mesh power transistor in microwave further, waste the area of wafer.
In traditional microwave, the interior matching capacitance of mesh power transistor generally has employing MOM(metal-oxide-metal) capacitance structure, also have and adopt MOS(metal-oxide-semiconductor) structure, because its lower metal electrode is all conduction, therefore realize capacitance metal bottom electrode ground connection without the need to adopting by bonding wire.But MOM capacitor cost is high, the microwave property of mos capacitance and the stability of hot operation are not as MOM capacitor, and institute thinks makes internally matched device energy hot operation, have developed the interior matching capacitance (see CN201310126712.3 patent) of high temperature resistant work.And be that under avoiding high temperature, metal and substrate generation alloy etc. react the stability affecting electric capacity, the backing material that the interior matching capacitance of the high temperature resistant work of developing generally adopts is carborundum or the contour stability material of sapphire, but not general semi-conducting material, due to carborundum and sapphire electric conductivity bad, so, the grounding electrode of electric capacity will be drawn from the upper surface of electric capacity, this not only occupies the area of wafer, the ground connection of electric capacity also must be realized by bonding wire, and the microwave property of this internal mesh power transistor is unfavorable.
Summary of the invention
Technical problem to be solved by this invention is to provide mesh power transistor matching capacitance and preparation method thereof in a kind of microwave, and the electric capacity prepared by described method, has high temperature resistant, and frequency performance is good, and volume is little, and manufacture craft is simple, the feature that cost is low.
For solving the problems of the technologies described above, the technical solution used in the present invention is: mesh power transistor matching capacitance in a kind of microwave, it is characterized in that: comprise complete interior matching capacitance front technique MIM on capacitance component, the upper capacitance component of MIM comprises substrate, the upper surface of described substrate is provided with lower metal electrode, described substrate is provided with extraction through hole, the lower surface of described substrate is provided with lower metal electrode extraction electrode, and a part for described lower metal electrode extraction electrode is electrically connected with described lower metal electrode through described extraction through hole.
Further technical scheme is: on described MIM, capacitance component comprises substrate, and the upper surface of described substrate is provided with lower metal electrode, and the outside of lower metal electrode is enclosed with insulating medium layer, and the upper surface of described insulating medium layer is provided with electrode of metal.
Further technical scheme is: described lower metal electrode extraction electrode comprises the metal seed layer being positioned at upper strata and the metal thickening layer being positioned at metal seed layer lower surface.
Further technical scheme is: the making material of described metal seed layer is titanium-Jin or titanium tungsten-Jin, and the making material of described metal thickening layer is gold, and described substrate is carborundum or sapphire.
The invention also discloses the manufacture method of mesh power transistor matching capacitance in a kind of microwave, it is characterized in that described method comprises the steps:
1) the upper capacitance component preparation of MIM: by electric capacity front processing technology, capacitance component on the MIM of the interior matching capacitance of making, on described MIM, capacitance component comprises substrate, the upper surface of described substrate is provided with lower metal electrode, the outside of lower metal electrode is enclosed with insulating medium layer, and the upper surface of described insulating medium layer is provided with electrode of metal;
2) thinning: the substrate of capacitance component on MIM is carried out thinning back side;
3) back side photoetching: the substrate after thinning adopts photoetching formed mask that etched backside draws through hole;
4) corrosion of through hole is drawn at the back side: in the position of the lower metal electrode of the corresponding MIM capacitor of substrate, the back side erodes away the extraction through hole of the lower metal electrode of MIM capacitor, removes photo etched mask after drawing through hole corrosion;
5) extraction electrode is formed: forming the lower metal electrode extraction electrode of the substrate back formation MIM capacitor of drawing through hole, lower metal electrode extraction electrode directly being contacted with lower metal electrode, forms electrical connection.
Further technical scheme is: the step that on described MIM prepared by capacitance component is as follows: first cleaned up by backing material, then on substrate, the lower metal electrode of MIM capacitor is formed by photoetching and metallization process, adopt the insulating medium layer of PECVD or LPCVD method deposited capacitances subsequently, then formed the electrode of metal of MIM capacitor by photoetching and metallization process.
Further technical scheme is: described method is in step 2) before also comprise the step of bonding die, concrete, the front of capacitance component on MIM and a sapphire sheet are bonded together.
Further technical scheme is: described method also comprises the step of sheet after step 5), concrete, the sapphire sheet being bonded in capacitance component front on MIM is removed.
Further technical scheme is: described step 5) is specially:
Back spatter metal: forming the substrate back sputtering layer of metal Seed Layer of drawing through hole;
The metal back side is electroplated: the method thickeied by plating, metal seed layer is formed metal thickening layer, and metal seed layer forms the lower metal electrode extraction electrode of MIM capacitor together with metal thickening layer.
Further technical scheme is: also comprise scribing steps after described step 5), concrete, and the MIM capacitor on whole wafer is separated by the instruction of dicing lane by saw blade, forms MIM capacitor discrete one by one.
The beneficial effect adopting technique scheme to produce is: for avoiding interior matching capacitance ground connection bonding wire to the adverse effect of frequency performance, bonding wire omits by the present invention, the substitute is and adopts capacity earth to draw from the back side of substrate.The interior matching capacitance of structure, both the wafer upper surface area occupied by bottom electrode extraction electrode of wafer had been saved, turn improve the microwave frequency performance of interior matching capacitance, also help the size of matching capacitance in reducing, same wafer realizes matching capacitance more, reduce the manufacturing cost of interior matching capacitance, be omitted capacity earth bonding wire, simplify technique.Namely the present invention is not only beneficial to the high-temperature stable work of internally matched device, also help the frequency performance improving device, reduce the volume of device, alleviate manual shelving and the labour intensity of bonding and work difficulty, and reduce the cost of interior matching capacitance, also just reduce the total cost of internally matched device.
For realizing above-mentioned target, in the manufacturing process of interior matching capacitance, after completing interior matching capacitance front technique, add the technique for thinning back side once to carborundum or Sapphire Substrate, object avoids interior matching capacitance back side extraction through hole excessively dark, occur that metal is discontinuous, the electric connection of capacitance metal bottom electrode cannot be realized, and add the photoetching of a back side extraction through hole, burn into metallization process.But eliminate the photoetching of bottom electrode from upper surface fairlead of high temperature resistant interior matching capacitance, etching process, also eliminate the metal electrode of lower metal electrode pole extraction from power on, debug in technique in follow-up craft, eliminate again the metal bonding lead-in wire work of interior matching capacitance bottom electrode (grounding electrode).Thus simplify technique on the whole, reduce manufacturing cost, improve the microwave property of interior coupling microwave power transistor; Simultaneously due to the reduction of interior matching capacitance area, also can reduce the volume of interior mesh power transistor further, be conducive to the miniaturization realizing device.
Accompanying drawing explanation
The structural representation of Fig. 1 to be application number be MIM capacitor in CN201310121712.3;
Fig. 2 be electric capacity of the present invention complete front technique MIM on electric capacity modular construction schematic diagram;
Fig. 3 be electric capacity of the present invention carry out backing substrate thinning after structural representation;
Fig. 4 is the mask graph after through hole photoetching is drawn at the electric capacity back side of the present invention;
Fig. 5 is that the electric capacity back side of the present invention extraction through hole corrodes clean and after removing mask structural representation;
Fig. 6 is the structural representation after electric capacity back metal of the present invention sputtering;
Fig. 7 is the structural representation after electric capacity back metal of the present invention plating;
Wherein: 1, substrate 2, lower metal electrode 3, insulating medium layer 4, metal extraction electrode 5 of the prior art, electrode of metal 6, mask 7, extraction through hole 8, metal seed layer 9, metal thickening layer 10, lower metal electrode extraction electrode.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Embodiment one
As shown in Figure 7, the invention discloses mesh power transistor matching capacitance in a kind of microwave, described electric capacity comprise complete interior matching capacitance front technique MIM on capacitance component, on described MIM, capacitance component comprises substrate 1, described substrate 1 is at high temperature be not easy material with metal electrode generation alloy reaction and stable, as carborundum or sapphire.The upper surface of described substrate 1 is provided with lower metal electrode 2, and the outside of lower metal electrode 2 is enclosed with insulating medium layer 3, and the upper surface of described insulating medium layer 3 is provided with electrode of metal 5.Described substrate 1 is provided with draws through hole 7, and the lower surface of described substrate 1 is provided with lower metal electrode extraction electrode, and a part for described lower metal electrode extraction electrode 10 is electrically connected with described lower metal electrode 2 through described extraction through hole 7.Described lower metal electrode extraction electrode comprises the metal seed layer 8 being positioned at upper strata and the metal thickening layer 9 being positioned at metal seed layer 8 lower surface.The making material of described metal seed layer 8 is titanium-Jin or titanium tungsten-Jin, and the making material of described metal thickening layer 9 is gold.
Embodiment two
The invention also discloses the manufacture method of mesh power transistor matching capacitance in a kind of microwave, described method comprises the steps:
1) first there is not obvious alloy reaction and stable backing material with lower metal electrode 2 by under high temperature, as carborundum or sapphire clean up; Then the lower metal electrode of MIM capacitor is formed on substrate 1 by photoetching and metallization process; Adopt the insulating medium layer 3 of the deposition techniques electric capacity such as PECVD or LPCVD subsequently; For improving compactness and the stability of dielectric layer, 800 DEG C of-850 DEG C of high temperature are adopted to carry out densification anneal process to insulating medium layer; Then photoetching and metallization process is adopted to form the electrode of metal 5 of MIM capacitor; Mechanical damage to insulating medium layer during for avoiding scribing, by clean for the corrosion of the insulating medium layer at dicing lane place; Define the structure shown in Fig. 2.
2) bonding die: bonded together in the front and a sapphire sheet that complete the MIM capacitor wafer of above-mentioned technique, object is that after the substrate thinning avoiding MIM capacitor wafer subsequently, the too thin wafer that causes of wafer breaks.
3) thinning: to be undertaken thinning by substrate 1 back side of MIM capacitor wafer, adopt the method for chemico-mechanical polishing MIM capacitor wafer to be reduced to 50 μm-120 μm, as shown in Figure 3, object avoids via process difficulty subsequently excessive.
4) back side photoetching: draw from the back side for completing MIM capacitor lower metal electrode, thus avoid front to draw bonded lead inductance to the impact of microwave property, adopt this photoetching to form the mask 6 of etched backside through hole, as shown in Figure 4.
5) corrosion of backside through vias 7: the extraction through hole 7 eroding away MIM capacitor bottom electrode at the back side, position of the corresponding lower metal electrode 2 of MIM capacitor wafer substrate 1, this through hole is carborundum after wanting corrosion thinning or Sapphire Substrate, instead of as chip technology corrosion resistant semiconductor silicon or gallium arsenide substrate, therefore the corrosive agent used in technique can be different from the general corrosion to Semiconductor substrate.If what MIM capacitor adopted is Sapphire Substrate, to avoid when corroding producing corrosion to the sapphire sheet of bonding die.Mask 6 is removed, as shown in Figure 5 after through hole corrosion.
6) back spatter metal: form lower metal electrode extraction electrode 10 for forming the back side in MIM capacitor, forming the substrate back sputtering layer of metal titanium-Jin or titanium tungsten-Jin of through hole, forming the substrate back sputtering layer of metal Seed Layer 8 of drawing through hole, play the effect of back metal electrode Seed Layer.
7) metal back side plating: the method thickeied by plating, the method thickeied by plating, metal seed layer is formed metal thickening layer 9, and metal seed layer forms the lower metal electrode extraction electrode of MIM capacitor together with metal thickening layer.
8) remove sheet: by step 2) be bonded at MIM capacitor wafer front sapphire sheet remove, now just complete the making of the backside through vias of MIM capacitor of the present invention.
9) scribing: the MIM capacitor on whole wafer is separated by the instruction of dicing lane by saw blade, just defines the finished product of the MIM capacitor discrete one by one shown in Fig. 7.
So far the making of MIM capacitor of the present invention is completed.This process also can be expanded in the MIM capacitor manufacture craft adopting semiconductor silicon or gallium arsenide substrate material, effective equally to its frequency performance of lifting.
It should be noted that, Fig. 1 gives former high temperature resistant mim capacitor structure, for representing clear, gives the dicing lane of electric capacity and half electric capacity of neighbour.The figure such as Fig. 2 owing to being the same simple repetition period, therefore only give a MIM capacitor and dicing lane thereof.The capacitance of Fig. 1 and Fig. 7 is equally large, can obviously find out, the wafer area occupied by the present invention obviously reduces, can the more MIM capacitor of output on same wafer.
For avoiding interior matching capacitance ground connection bonding wire to the adverse effect of frequency performance, bonding wire omits by the present invention, the substitute is and adopts capacity earth to draw from the back side of substrate.The interior matching capacitance of structure, both the wafer upper surface area occupied by bottom electrode extraction electrode of wafer had been saved, turn improve the microwave frequency performance of interior matching capacitance, also help the size of matching capacitance in reducing, same wafer realizes matching capacitance more, reduce the manufacturing cost of interior matching capacitance, be omitted capacity earth bonding wire, simplify technique.Namely the present invention is not only beneficial to the high-temperature stable work of internally matched device, also help the frequency performance improving device, reduce the volume of device, alleviate manual shelving and the labour intensity of bonding and work difficulty, and reduce the cost of interior matching capacitance, also just reduce the total cost of internally matched device.
For realizing above-mentioned target, in the manufacturing process of interior matching capacitance, after completing interior matching capacitance front technique, add the technique for thinning back side once to carborundum or Sapphire Substrate, object avoids interior matching capacitance back side extraction through hole excessively dark, occur that metal is discontinuous, the electric connection of capacitance metal bottom electrode cannot be realized, and add the photoetching of a back side extraction through hole, burn into metallization process.But eliminate the photoetching of bottom electrode from upper surface fairlead of high temperature resistant interior matching capacitance, etching process, also eliminate the metal electrode of lower metal electrode pole extraction from power on, debug in technique in follow-up craft, eliminate again the metal bonding lead-in wire work of interior matching capacitance bottom electrode (grounding electrode).Thus simplify technique on the whole, reduce manufacturing cost, improve the microwave property of interior coupling microwave power transistor; Simultaneously due to the reduction of interior matching capacitance area, also can reduce the volume of interior mesh power transistor further, be conducive to the miniaturization realizing device.
Claims (10)
1. mesh power transistor matching capacitance in a microwave, it is characterized in that: comprise complete interior matching capacitance front technique MIM on capacitance component, the upper capacitance component of MIM comprises substrate (1), the upper surface of described substrate (1) is provided with lower metal electrode (2), described substrate (1) is provided with draws through hole (7), the lower surface of described substrate (1) is provided with lower metal electrode extraction electrode (10), and a part for described lower metal electrode extraction electrode (10) is electrically connected with described lower metal electrode (2) through described extraction through hole (7).
2. mesh power transistor matching capacitance in microwave as claimed in claim 1, it is characterized in that: on described MIM, capacitance component comprises substrate (1), the upper surface of described substrate (1) is provided with lower metal electrode (2), the outside of lower metal electrode (2) is enclosed with insulating medium layer (3), and the upper surface of described insulating medium layer (3) is provided with electrode of metal (5).
3. mesh power transistor matching capacitance in microwave as claimed in claim 1, is characterized in that: described lower metal electrode extraction electrode (10) comprises the metal seed layer (8) being positioned at upper strata and the metal thickening layer (9) being positioned at metal seed layer (8) lower surface.
4. mesh power transistor matching capacitance in microwave as claimed in claim 3, it is characterized in that: the making material of described metal seed layer (8) is titanium-Jin or titanium tungsten-Jin, the making material of described metal thickening layer (9) is gold, and described substrate (1) is carborundum or sapphire.
5. the manufacture method of mesh power transistor matching capacitance in microwave, is characterized in that described method comprises the steps:
1) the upper capacitance component preparation of MIM: by electric capacity front processing technology, capacitance component on the MIM of the interior matching capacitance of making, on described MIM, capacitance component comprises substrate (1), the upper surface of described substrate (1) is provided with lower metal electrode (2), the outside of lower metal electrode (2) is enclosed with insulating medium layer (3), and the upper surface of described insulating medium layer (3) is provided with electrode of metal (5);
2) thinning: the substrate (1) of capacitance component on MIM is carried out thinning back side;
3) back side photoetching: substrate (1) the upper employing photoetching after thinning forms the mask (6) that etched backside draws through hole (7);
4) corrosion of through hole (7) is drawn at the back side: in the position of the lower metal electrode (2) of the corresponding MIM capacitor of substrate, the back side erodes away the extraction through hole (7) of the lower metal electrode of MIM capacitor, removes photo etched mask (6) after drawing through hole (7) corrosion;
5) extraction electrode is formed: forming the lower metal electrode extraction electrode (10) of the substrate back formation MIM capacitor of drawing through hole (7), lower metal electrode extraction electrode (10) directly being contacted with lower metal electrode (2), forms electrical connection.
6. the manufacture method of mesh power transistor matching capacitance in microwave as claimed in claim 5, it is characterized in that, the step that on described MIM prepared by capacitance component is as follows: first by clean for substrate (1) material clean, then on substrate, the lower metal electrode (2) of MIM capacitor is formed by photoetching and metallization process, adopt the insulating medium layer (3) of PECVD or LPCVD method deposited capacitances subsequently, then formed the electrode of metal (5) of MIM capacitor by photoetching and metallization process.
7. the manufacture method of mesh power transistor matching capacitance in microwave as claimed in claim 5, it is characterized in that, described method is in step 2) before also comprise the step of bonding die, concrete, the front of capacitance component on MIM and a sapphire sheet are bonded together.
8. the manufacture method of mesh power transistor matching capacitance in microwave as claimed in claim 7, it is characterized in that, described method also comprises the step of sheet after step 5), concrete, will be bonded in the sapphire sheet removal in capacitance component front MIM on.
9. the manufacture method of mesh power transistor matching capacitance in microwave as claimed in claim 5, it is characterized in that, described step 5) is specially:
Back spatter metal: forming substrate back sputtering layer of metal Seed Layer (8) of drawing through hole;
The metal back side is electroplated: the method thickeied by plating, and at metal seed layer (8) upper formation metal thickening layer (9), metal seed layer (8) and metal thickening layer (9) form the lower metal electrode extraction electrode (10) of MIM capacitor together.
10. the manufacture method of mesh power transistor matching capacitance in microwave as claimed in claim 5, it is characterized in that, also scribing steps is comprised after described step 5), concrete, MIM capacitor on whole wafer is separated by the instruction of dicing lane by saw blade, form MIM capacitor discrete one by one.
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| CN201510747914.9A CN105280727A (en) | 2015-11-06 | 2015-11-06 | Microwave internal matching power transistor matching capacitor and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752207A (en) * | 2019-09-10 | 2020-02-04 | 福建省福联集成电路有限公司 | Back capacitor structure and manufacturing method |
| CN113161312A (en) * | 2021-01-25 | 2021-07-23 | 博微太赫兹信息科技有限公司 | Gradual-change gold belt interconnection structure between chip and transmission line and assembling method thereof |
| WO2022228369A1 (en) * | 2021-04-29 | 2022-11-03 | 华为技术有限公司 | Integrated circuit |
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| CN110752207B (en) * | 2019-09-10 | 2021-04-30 | 福建省福联集成电路有限公司 | Back capacitor structure and manufacturing method |
| CN113161312A (en) * | 2021-01-25 | 2021-07-23 | 博微太赫兹信息科技有限公司 | Gradual-change gold belt interconnection structure between chip and transmission line and assembling method thereof |
| CN113161312B (en) * | 2021-01-25 | 2023-07-18 | 博微太赫兹信息科技有限公司 | Gradual-change gold-strip interconnection structure between chip and transmission line and assembly method thereof |
| WO2022228369A1 (en) * | 2021-04-29 | 2022-11-03 | 华为技术有限公司 | Integrated circuit |
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