CN102280439B - Internally matching network for microwave power transistor and manufacturing method of internally matching network - Google Patents
Internally matching network for microwave power transistor and manufacturing method of internally matching network Download PDFInfo
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- CN102280439B CN102280439B CN2011101238831A CN201110123883A CN102280439B CN 102280439 B CN102280439 B CN 102280439B CN 2011101238831 A CN2011101238831 A CN 2011101238831A CN 201110123883 A CN201110123883 A CN 201110123883A CN 102280439 B CN102280439 B CN 102280439B
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/30111—Impedance matching
Abstract
The invention discloses an internally matching network for a microwave power transistor and a manufacturing method of the internally matching network. The internally matching network comprises an internally matching mass optical memory (MOM) capacitor, a lower electrode outgoing line (5), a first upper electrode outgoing line (6) and a second upper electrode outgoing line (7), wherein the lower electrode outgoing line (5) of the MOM capacitor is led out of the upper surface (4), which is exposed by photoetching, of a lower electrode, and the other end of the lower electrode outgoing line is connected with a grounding pin of a tube core (8) transistor. The internally matching network has the advantages that the lengths of the electrode outgoing lines are shortened, the performance of the internally matching transistor is improved, a manufacturing process of the internally matching power transistor is simplified, the difficulty of the process is reduced, the utilization rate of a tube shell is improved, and the development period is shortened.
Description
Technical field
The present invention relates to matching network and manufacture method thereof in a kind of microwave power transistor, belong to the semiconductor microactuator Electronic Design and make the field.
Background technology
Microwave high-power transistor is because operating frequency is high, die area is large, the parasitic parameter impact is serious, the input, output-resistor of tube core is lower, if be directly that the microwave system of 50 ohm is connected with characteristic impedance, because impedance is not seriously mated, will cause transistor can't realize high-power output, make transistorized performance to give full play to.
In adopting, matching network promotes (conversion) to the input, output-resistor of tube core and reduces the impact of parasitic parameter, is a kind of effective way that realizes the high-power output of microwave power transistor.The quality of interior matching capacitance quality has very important impact to transistor overall performance and rate of finished products.
For avoiding the lossy microwave of interior matching capacitance, for the higher interior matching transistor of operating frequency, often adopt MOM(metal-oxide layer-metal) interior matching capacitance.If matching capacitance is improper or problem is arranged in MOM, change very careful, there slightly have to be improper, just can cause whole internally matched device to scrap, not only tube core waste, and also shell also scraps thereupon, causes the rising of the overall cost of device.Depend merely on the careful operation of personnel hand-manipulated and avoid the appearance of this problem, difficulty is very large.
Summary of the invention
The technical problem to be solved in the present invention is to provide matching network and manufacture method thereof in a kind of microwave power transistor.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
Technical scheme one (technical scheme of matching network in microwave power transistor of the present invention)
Matching network in a kind of microwave power transistor is characterized in that: comprise interior coupling MOM electric capacity, bottom electrode lead-out wire, the first top electrode lead-out wire that is used as the first coupling inductance L 1 that is comprised of bottom electrode, oxide isolation layer and top electrode, the second top electrode lead-out wire that is used as the second coupling inductance L 2; The bottom electrode of described interior coupling MOM electric capacity is wider than its oxide isolation layer; The bottom electrode lead-out wire of described MOM electric capacity is drawn from the upper surface of the bottom electrode that photoetching is exposed, the grounding pin of its another termination transistor dies; The length of described the first top electrode lead-out wire is determined by the induction reactance value of inductance L 1, the input pin of its other end adapter package seat; The length of described the second top electrode lead-out wire is determined by the induction reactance value of inductance L 2, the input pin of its another termination transistor dies.
Technical scheme two (technical scheme of matching network manufacture method in microwave power transistor of the present invention)
The interior matching network manufacture method of microwave power transistor is characterized in that the processing step of described method is:
A, silicon chip, the oxide isolation layer in forming between coupling MOM electric capacity upper/lower electrode;
B, mate the golden bottom electrode of MOM electric capacity in making on the oxide isolation layer;
C, corrosion of silicon;
D, mate the top electrode of MOM electric capacity in making on the another side of oxide isolation layer;
E, photoetching oxide isolation layer, the upper surface of the interior coupling MOM capacitor lower electrode that the lead-in wire of interior coupling MOM capacitor lower electrode is exposed by photoetching is drawn;
F, scolder and transistor dies are contained on the shell base successively the sintering transistor dies;
G, scolder and interior coupling MOM electric capacity are contained on the shell base successively coupling MOM electric capacity in sintering;
H, the described bottom electrode lead-out wire of difference bonding, the first top electrode lead-out wire and the second top electrode lead-out wire.
When interior coupling MOM capacitor's capacity was improper, the exchonge step of the interior matching network of microwave power transistor was:
A, remove bottom electrode lead-out wire, the first top electrode lead-out wire and the second top electrode lead-out wire on original interior coupling MOM electric capacity;
B, remove original interior coupling MOM electric capacity;
C, scolder and new interior coupling MOM electric capacity are contained on the shell base successively the interior coupling MOM electric capacity that sintering is new;
D, interior bottom electrode lead-out wire, the first top electrode lead-out wire and the second top electrode lead-out wire that mates MOM electric capacity that the difference bonding is new.
The beneficial effect that adopts technique scheme to produce is:
1, improved the performance of interior matching transistor: the frequency performance of microwave power transistor and ground lead inductance are inversely proportional to, and the size of inductance value is relevant with the length of lead-in wire, goes between longer, and inductance value is larger.Rate of finished products for the manufacturing process that guarantees electric capacity, capacitor lower electrode generally will be done to support by the proof gold with 100 microns left and right and guarantee, after adopting new interior matching network, interior matching capacitance bottom electrode is drawn by upper surface, the base stage bonding wire shortens 100 microns left and right at least, and the frequency performance that improves mesh power device in microwave is had larger benefit.
2, simplify the transistorized manufacturing process of interior mesh power, reduced technology difficulty: originally want the bonding ground lead after the complete tube core of sintering, and then matching capacitance in the input of assembling sintering, this moment is careless slightly, just may touch the ground connection bonding wire at outage appearance place.The present invention is but bonding ground lead again after the complete tube core of sintering and interior matching capacitance, has the problem of touching disconnecting ground lead-in wire, and operating personnel's requirement is obviously alleviated.
3, be conducive to improve the reliability of interior matching transistor: after former technique bonding ground lead, then matching capacitance in sintering, during sintering electric capacity, scolder easily forms alloy with the ground connection gold wire of bonding, causes gold wire to lose ductility and becomes fragile, easily fracture.And bonding ground lead again after the present invention's complete tube core that is sintering and interior matching capacitance, the problem of fundamentally having avoided ground connection gold wire alloy has guaranteed the ductility of gold wire, internally the reliability of matching transistor is favourable.
4, shortened the lead time: after matching capacitance, if ground lead disconnects, generally just scrapped, and not only wasted shell, also causes scrapping of good transistor chip, causes some these results that obtain can not get by transistor in the complete input of sintering for former technique.And after employing the present invention, electric capacity is improper when changing electric capacity, as long as the lead-in wire on input capacitance is pulled out, after having changed electric capacity, again bonding ground lead and input get final product again, can not affect the performance of tube core, more can not cause the situation that tube core and shell are scrapped simultaneously, can in time catch experimental result, avoid the waste of time, human and material resources, financial resources.
5, improved the shell utilance: avoided former interior matching technique when changing electric capacity, lead-in wire causes bonding again and shell is scrapped with easily touching disconnecting.Thereby improved the shell utilance, reduced manufacturing cost.
Description of drawings
Fig. 1 is interior coupling MOM capacitance structure schematic diagram of the present invention;
Fig. 2 is coupling end view in internally matched device of the present invention input (take common base bipolar transistor amplifying circuit as example, i.e. base earth);
Fig. 3 is coupling vertical view in internally matched device of the present invention input (take common base bipolar transistor amplifying circuit as example, i.e. base earth);
Fig. 4 is equivalent circuit diagram of the present invention (take common base bipolar transistor amplifying circuit as example, i.e. base earth).
1 for capacitor lower electrode 2 for oxide isolation layer 3 for electric capacity top electrode 4 for bottom electrode from its photoetching expose above the position 5 bottom electrodes lead-in wires 6 of drawing be that the first top electrode lead-in wire 7 is that the second top electrode lead-in wire 8 is transistor dies
Embodiment
The embodiment of matching network in the microwave power transistor of embodiment 1(raising shell of the present invention utilance is referring to Fig. 1-Fig. 4)
Matching network in a kind of microwave power transistor that improves the shell utilance is characterized in that: comprise the interior coupling MOM electric capacity that is comprised of bottom electrode 1, oxide isolation layer 2 and top electrode 3, bottom electrode lead-out wire 5, as the first top electrode lead-out wire 6 of the first coupling inductance L 1, mate the second top electrode lead-out wire 7 of inductance L 2 as second; The bottom electrode 1 of described interior coupling MOM electric capacity is wider than its oxide isolation layer 2; The bottom electrode lead-out wire 5 of described MOM electric capacity is drawn from the upper surface 4 of the bottom electrode that photoetching is exposed, the grounding pin of its another termination transistor dies 8; The length of described the first top electrode lead-out wire 6 is determined by the induction reactance value of inductance L 1, the input pin of its other end adapter package seat; The length of described the second top electrode lead-out wire 7 is determined by the induction reactance value of inductance L 2, the input pin of its another termination transistor dies 8.
The specific embodiment of the present invention is the interior matching network of the transistorized input of mesh power in the microwave bipolar common base.The transistorized input impedance that does not add interior matching network can equivalence be an inductance and the connecting an of resistance.After adding the interior matching network of input, equivalent electric circuit as shown in Figure 4, is held from EB, and its input impedance becomes:
Wherein ω is the operating angle frequency, C
1For inputting interior matching capacitance capacitor value, L
1And L
2Be interior coupling inductance induction reactance value, L
inAnd R
inBe respectively transistorized input equivalent inductance induction reactance value and transistorized input equivalent resistance resistance value.
As ω=[(L
2+ L
in) C
1]
-1/2The time, input impedance this moment can be expressed as:
If characteristic is anti-Z
c=[(L
2+ L
in)/C
1]
1/2, and make L
1=L
2+ L
in, namely offset imaginary part fully.After adding interior matching network, transistorized input impedance becomes:
Be input impedance become characteristic impedance square divided by former impedance, make transistorized input impedance get a promotion, avoid to a certain extent the appearance of bipolar transistor " heat is run quickly ", both promoted transistorized input impedance, improved again transistorized reliability.
The embodiment of matching network manufacture method in the microwave power transistor of embodiment 2(raising shell of the present invention utilance is referring to Fig. 1-Fig. 3)
The interior matching network manufacture method of microwave power transistor is characterized in that the processing step of described method is:
A, silicon chip, the oxide isolation layer 2 in forming between coupling MOM electric capacity upper/lower electrode;
B, mate the bottom electrode 1 of MOM electric capacity in making on the oxide isolation layer;
C, corrosion of silicon;
D, mate the top electrode 3 of MOM electric capacity in making on the another side of oxide isolation layer;
E, photoetching oxide isolation layer, the upper surface 4 of the interior coupling MOM capacitor lower electrode that the lead-in wire of interior coupling MOM capacitor lower electrode is exposed by photoetching is drawn;
F, scolder and transistor dies are contained on the shell base successively sintering transistor dies 8;
G, scolder and interior coupling MOM electric capacity are contained on the shell base successively coupling MOM electric capacity in sintering;
H, the described bottom electrode lead-out wire 5 of difference bonding, the first top electrode lead-out wire 6 and the second top electrode lead-out wire 7.
The embodiment of matching network replacing method in the microwave power transistor of embodiment 3(raising shell of the present invention utilance is referring to Fig. 2-Fig. 3)
When interior coupling MOM capacitor's capacity was improper, the exchonge step of the interior matching network of microwave power transistor was:
A, remove bottom electrode lead-out wire 5, the first top electrode lead-out wire 6 and the second top electrode lead-out wire 7 on original interior coupling MOM electric capacity;
B, remove original interior coupling MOM electric capacity;
C, scolder and new interior coupling MOM electric capacity are contained on the shell base successively the interior coupling MOM electric capacity that sintering is new;
D, interior bottom electrode lead-out wire 5, the first top electrode lead-out wires 6 and the second top electrode lead-out wire 7 that mates MOM electric capacity that the difference bonding is new.
Claims (2)
1. matching network in a microwave power transistor is characterized in that: comprise the interior coupling MOM electric capacity that formed by bottom electrode (1), oxide isolation layer (2) and top electrode (3), bottom electrode lead-out wire (5), as the first top electrode lead-out wire (6) of the first coupling inductance L 1, be used as second and mate the second top electrode lead-out wire (7) of inductance L 2; The bottom electrode (1) of described interior coupling MOM electric capacity is wider than its oxide isolation layer (2); The bottom electrode lead-out wire (5) of described MOM electric capacity is drawn from the upper surface (4) of the bottom electrode that photoetching is exposed, the grounding pin of its another termination transistor dies (8); The length of described the first top electrode lead-out wire (6) is determined by the induction reactance value of inductance L 1, the input pin of its other end adapter package seat; The length of described the second top electrode lead-out wire (7) is determined by the induction reactance value of inductance L 2, the input pin of its another termination transistor dies (8).
2. the interior matching network manufacture method of microwave power transistor is characterized in that the processing step of described method is:
A, silicon chip, the oxide isolation layer (2) in forming between coupling MOM electric capacity upper/lower electrode;
B, mate the bottom electrode (1) of MOM electric capacity in making on the oxide isolation layer;
C, corrosion of silicon;
D, mate the top electrode (3) of MOM electric capacity in making on the another side of oxide isolation layer;
E, photoetching oxide isolation layer, the upper surface (4) of the interior coupling MOM capacitor lower electrode that the lead-in wire of interior coupling MOM capacitor lower electrode is exposed by photoetching is drawn;
F, scolder and transistor dies are contained on the shell base successively sintering transistor dies (8);
G, scolder and interior coupling MOM electric capacity are contained on the shell base successively coupling MOM electric capacity in sintering;
H, the difference described bottom electrode lead-out wire of bonding (5), the first top electrode lead-out wire (6) and the second top electrode lead-out wire (7).
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| CN103545172A (en) * | 2013-10-11 | 2014-01-29 | 中国电子科技集团公司第十三研究所 | Method of preventing medium cracks at cuts of microwave internally-matched capacitors |
| CN103531443B (en) * | 2013-11-01 | 2016-05-11 | 上海贝岭股份有限公司 | Semiconductor devices and manufacture method thereof |
| CN104237707B (en) * | 2014-10-11 | 2017-02-15 | 中国电子科技集团公司第十三研究所 | Reliability testing device and testing method thereof for microwave devices |
| CN110752195A (en) * | 2019-11-01 | 2020-02-04 | 苏州华太电子技术有限公司 | Radio frequency power chip packaging structure |
| CN110797338A (en) * | 2019-12-09 | 2020-02-14 | 苏州华太电子技术有限公司 | Radio frequency power chip tube core structure with matching and radio frequency power amplifier |
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| US4200880A (en) * | 1978-03-28 | 1980-04-29 | Microwave Semiconductor Corp. | Microwave transistor with distributed output shunt tuning |
| US6181200B1 (en) * | 1999-04-09 | 2001-01-30 | Integra Technologies, Inc. | Radio frequency power device |
| CN101740556A (en) * | 2009-12-23 | 2010-06-16 | 四川龙瑞微电子有限公司 | Hybrid microwave integrated circuit |
| CN101785109A (en) * | 2007-06-22 | 2010-07-21 | 克里公司 | RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks |
-
2011
- 2011-05-13 CN CN2011101238831A patent/CN102280439B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4200880A (en) * | 1978-03-28 | 1980-04-29 | Microwave Semiconductor Corp. | Microwave transistor with distributed output shunt tuning |
| US6181200B1 (en) * | 1999-04-09 | 2001-01-30 | Integra Technologies, Inc. | Radio frequency power device |
| CN101785109A (en) * | 2007-06-22 | 2010-07-21 | 克里公司 | RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks |
| CN101740556A (en) * | 2009-12-23 | 2010-06-16 | 四川龙瑞微电子有限公司 | Hybrid microwave integrated circuit |
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