CN205092248U - It matches electric capacity to match power transistor in microwave - Google Patents
It matches electric capacity to match power transistor in microwave Download PDFInfo
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- CN205092248U CN205092248U CN201520879476.7U CN201520879476U CN205092248U CN 205092248 U CN205092248 U CN 205092248U CN 201520879476 U CN201520879476 U CN 201520879476U CN 205092248 U CN205092248 U CN 205092248U
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Abstract
The utility model discloses an it matches electric capacity to match power transistor in microwave relates to electric capacity technical field. Capacitance assembly is gone up including the MIM who has accomplished the positive technology of interior matching electric capacity to electric capacity, and the last capacitance assembly of MIM includes the substrate, the upper surface of substrate is equipped with the metal bottom electrode, be equipped with on the substrate and draw forth the through -hole, the lower surface of substrate is equipped with metal bottom electrode extraction electrode, some of metal bottom electrode extraction electrode is passed draw forth the through -hole with electric connection under the metal. Electric capacity has high temperature resistantly, and the frequency performance is good, and is small, preparation simple process, characteristics with low costs.
Description
Technical field
The utility model relates to capacitance technology field, particularly relates to mesh power transistor matching capacitance in a kind of microwave.
Background technology
After avoiding adding interior matching network, produce the overall performance generation adverse influence of excessive loss to device, in requiring, matching capacitance and interior coupling inductance must be little to the loss of microwave.Along with the raising of operating frequency, the inductance value of bonding wire also can increase, lossy microwave will strengthen, unfavorable to the frequency performance of microwave device, especially to the base stage bonding wire of the source ground line of the field-effect transistor of common source configuration and the bipolar transistor of common base structure, its length is very large to wielding influence of microwave property.For reducing the inductance value of ground lead as far as possible, application number be CN201310126712.3 patent document discloses a kind of MIM capacitor (described capacitance structure as shown in Figure 1), its method adopting grounding electrode to draw from upper surface realizes the ground connection of capacitance metal electrode by bonding wire, this bonding wire, along with the raising of device operating frequencies, will be more remarkable on the impact of the microwave property of device.Unfavorable to the frequency performance promoting mesh power transistor in microwave further, waste the area of wafer.
In traditional microwave, the interior matching capacitance of mesh power transistor generally has employing MOM(metal-oxide-metal) capacitance structure, also have and adopt MOS(metal-oxide-semiconductor) structure, because its lower metal electrode is all conduction, therefore realize capacitance metal bottom electrode ground connection without the need to adopting by bonding wire.But MOM capacitor cost is high, the microwave property of mos capacitance and the stability of hot operation are not as MOM capacitor, and institute thinks makes internally matched device energy hot operation, have developed the interior matching capacitance (see CN201310126712.3 patent) of high temperature resistant work.And be that under avoiding high temperature, metal and substrate generation alloy etc. react the stability affecting electric capacity, the backing material that the interior matching capacitance of the high temperature resistant work of developing generally adopts is carborundum or the contour stability material of sapphire, but not general semi-conducting material, due to carborundum and sapphire electric conductivity bad, so, the grounding electrode of electric capacity will be drawn from the upper surface of electric capacity, this not only occupies the area of wafer, the ground connection of electric capacity also must be realized by bonding wire, and the microwave property of this internal mesh power transistor is unfavorable.
Utility model content
Technical problem to be solved in the utility model is to provide mesh power transistor matching capacitance in a kind of microwave, and described electric capacity has high temperature resistant, and frequency performance is good, and volume is little, and manufacture craft is simple, the feature that cost is low.
For solving the problems of the technologies described above, technical solution adopted in the utility model is: mesh power transistor matching capacitance in a kind of microwave, it is characterized in that: comprise complete interior matching capacitance front technique MIM on capacitance component, the upper capacitance component of MIM comprises substrate, the upper surface of described substrate is provided with lower metal electrode, described substrate is provided with extraction through hole, the lower surface of described substrate is provided with lower metal electrode extraction electrode, and a part for described lower metal electrode extraction electrode is electrically connected with described lower metal electrode through described extraction through hole.
Further technical scheme is: on described MIM, capacitance component comprises substrate, and the upper surface of described substrate is provided with lower metal electrode, and the outside of lower metal electrode is enclosed with insulating medium layer, and the upper surface of described insulating medium layer is provided with electrode of metal.
Further technical scheme is: described lower metal electrode extraction electrode comprises the metal seed layer being positioned at upper strata and the metal thickening layer being positioned at metal seed layer lower surface.
Further technical scheme is: the making material of described metal seed layer is titanium-Jin or titanium tungsten-Jin, and the making material of described metal thickening layer is gold.
Further technical scheme is: described substrate is carborundum or sapphire.
The beneficial effect adopting technique scheme to produce is: for avoiding interior matching capacitance ground connection bonding wire to the adverse effect of frequency performance, bonding wire omits by the utility model, the substitute is and adopts capacity earth to draw from the back side of substrate.The interior matching capacitance of structure, both the wafer upper surface area occupied by bottom electrode extraction electrode of wafer had been saved, turn improve the microwave frequency performance of interior matching capacitance, also help the size of matching capacitance in reducing, same wafer realizes matching capacitance more, reduce the manufacturing cost of interior matching capacitance, be omitted capacity earth bonding wire, simplify technique.Namely the utility model is not only beneficial to the high-temperature stable work of internally matched device, also help the frequency performance improving device, reduce the volume of device, alleviate manual shelving and the labour intensity of bonding and work difficulty, and reduce the cost of interior matching capacitance, also just reduce the total cost of internally matched device.
For realizing above-mentioned target, in the manufacturing process of interior matching capacitance, after completing interior matching capacitance front technique, add the technique for thinning back side once to carborundum or Sapphire Substrate, object avoids interior matching capacitance back side extraction through hole excessively dark, occur that metal is discontinuous, the electric connection of capacitance metal bottom electrode cannot be realized, and add the photoetching of a back side extraction through hole, burn into metallization process.But eliminate the photoetching of bottom electrode from upper surface fairlead of high temperature resistant interior matching capacitance, etching process, also eliminate the metal electrode of lower metal electrode pole extraction from power on, debug in technique in follow-up craft, eliminate again the metal bonding lead-in wire work of interior matching capacitance bottom electrode (grounding electrode).Thus simplify technique on the whole, reduce manufacturing cost, improve the microwave property of interior coupling microwave power transistor; Simultaneously due to the reduction of interior matching capacitance area, also can reduce the volume of interior mesh power transistor further, be conducive to the miniaturization realizing device.
Accompanying drawing explanation
The structural representation of Fig. 1 to be application number be MIM capacitor in CN201310121712.3;
Fig. 2 be electric capacity described in the utility model complete front technique MIM on electric capacity modular construction schematic diagram;
Fig. 3 be electric capacity described in the utility model carry out backing substrate thinning after structural representation;
Fig. 4 is the mask graph after through hole photoetching is drawn at the electric capacity back side described in the utility model;
Fig. 5 is that the electric capacity back side described in the utility model extraction through hole corrodes clean and after removing mask structural representation;
Fig. 6 is the structural representation after electric capacity back metal described in the utility model sputtering;
Fig. 7 is the structural representation after electric capacity back metal described in the utility model plating;
Wherein: 1, substrate 2, lower metal electrode 3, insulating medium layer 4, metal extraction electrode 5 of the prior art, electrode of metal 6, mask 7, extraction through hole 8, metal seed layer 9, metal thickening layer 10, lower metal electrode extraction electrode.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only a part of embodiment of the present utility model, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Set forth a lot of detail in the following description so that fully understand the utility model, but the utility model can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when doing similar popularization without prejudice to when the utility model intension, and therefore the utility model is by the restriction of following public specific embodiment.
As shown in Figure 7, the utility model discloses mesh power transistor matching capacitance in a kind of microwave, described electric capacity comprise complete interior matching capacitance front technique MIM on capacitance component, on described MIM, capacitance component comprises substrate 1, described substrate 1 is at high temperature be not easy material with metal electrode generation alloy reaction and stable, as carborundum or sapphire.The upper surface of described substrate 1 is provided with lower metal electrode 2, and the outside of lower metal electrode 2 is enclosed with insulating medium layer 3, and the upper surface of described insulating medium layer 3 is provided with electrode of metal 5.Described substrate 1 is provided with draws through hole 7, and the lower surface of described substrate 1 is provided with lower metal electrode extraction electrode, and a part for described lower metal electrode extraction electrode 10 is electrically connected with described lower metal electrode 2 through described extraction through hole 7.Described lower metal electrode extraction electrode comprises the metal seed layer 8 being positioned at upper strata and the metal thickening layer 9 being positioned at metal seed layer 8 lower surface.The making material of described metal seed layer 8 is titanium-Jin or titanium tungsten-Jin, and the making material of described metal thickening layer 9 is gold.
The manufacture method of transistor matching capacitance described in the utility model is as follows:
1) first there is not obvious alloy reaction and stable backing material with lower metal electrode 2 by under high temperature, as carborundum or sapphire clean up; Then the lower metal electrode of MIM capacitor is formed on substrate 1 by photoetching and metallization process; Adopt the insulating medium layer 3 of the deposition techniques electric capacity such as PECVD or LPCVD subsequently; For improving compactness and the stability of dielectric layer, 800 DEG C of-850 DEG C of high temperature are adopted to carry out densification anneal process to insulating medium layer; Then photoetching and metallization process is adopted to form the electrode of metal 5 of MIM capacitor; Mechanical damage to insulating medium layer during for avoiding scribing, by clean for the corrosion of the insulating medium layer at dicing lane place; Define the structure shown in Fig. 2.
2) bonding die: bonded together in the front and a sapphire sheet that complete the MIM capacitor wafer of above-mentioned technique, object is that after the substrate thinning avoiding MIM capacitor wafer subsequently, the too thin wafer that causes of wafer breaks.
3) thinning: to be undertaken thinning by substrate 1 back side of MIM capacitor wafer, adopt the method for chemico-mechanical polishing MIM capacitor wafer to be reduced to 50 μm-120 μm, as shown in Figure 3, object avoids via process difficulty subsequently excessive.
4) back side photoetching: draw from the back side for completing MIM capacitor lower metal electrode, thus avoid front to draw bonded lead inductance to the impact of microwave property, adopt this photoetching to form the mask 6 of etched backside through hole, as shown in Figure 4.
5) corrosion of backside through vias 7: the extraction through hole 7 eroding away MIM capacitor bottom electrode at the back side, position of the corresponding lower metal electrode 2 of MIM capacitor wafer substrate 1, this through hole is carborundum after wanting corrosion thinning or Sapphire Substrate, instead of as chip technology corrosion resistant semiconductor silicon or gallium arsenide substrate, therefore the corrosive agent used in technique can be different from the general corrosion to Semiconductor substrate.If what MIM capacitor adopted is Sapphire Substrate, to avoid when corroding producing corrosion to the sapphire sheet of bonding die.Mask 6 is removed, as shown in Figure 5 after through hole corrosion.
6) back spatter metal: form lower metal electrode extraction electrode 10 for forming the back side in MIM capacitor, forming the substrate back sputtering layer of metal titanium-Jin or titanium tungsten-Jin of through hole, forming the substrate back sputtering layer of metal Seed Layer of drawing through hole, play the effect of back metal electrode Seed Layer.
7) metal back side plating: the method thickeied by plating, the method thickeied by plating, metal seed layer is formed metal thickening layer, and metal seed layer forms the lower metal electrode extraction electrode of MIM capacitor together with metal thickening layer.
8) remove sheet: by step 2) be bonded at MIM capacitor wafer front sapphire sheet remove, now just complete the making of the backside through vias of MIM capacitor of the present utility model.
9) scribing: the MIM capacitor on whole wafer is separated by the instruction of dicing lane by saw blade, just defines the finished product of the MIM capacitor discrete one by one shown in Fig. 7.
So far the making of MIM capacitor of the present utility model is completed.This process also can be expanded in the MIM capacitor manufacture craft adopting semiconductor silicon or gallium arsenide substrate material, effective equally to its frequency performance of lifting.
It should be noted that, Fig. 1 gives former high temperature resistant mim capacitor structure, for representing clear, gives the dicing lane of electric capacity and half electric capacity of neighbour.The figure such as Fig. 2 owing to being the same simple repetition period, therefore only give a MIM capacitor and dicing lane thereof.The capacitance of Fig. 1 and Fig. 7 is equally large, can obviously find out, the wafer area occupied by the utility model obviously reduces, can the more MIM capacitor of output on same wafer.
For avoiding interior matching capacitance ground connection bonding wire to the adverse effect of frequency performance, bonding wire omits by the utility model, the substitute is and adopts capacity earth to draw from the back side of substrate.The interior matching capacitance of structure, both the wafer upper surface area occupied by bottom electrode extraction electrode of wafer had been saved, turn improve the microwave frequency performance of interior matching capacitance, also help the size of matching capacitance in reducing, same wafer realizes matching capacitance more, reduce the manufacturing cost of interior matching capacitance, be omitted capacity earth bonding wire, simplify technique.Namely the utility model is not only beneficial to the high-temperature stable work of internally matched device, also help the frequency performance improving device, reduce the volume of device, alleviate manual shelving and the labour intensity of bonding and work difficulty, and reduce the cost of interior matching capacitance, also just reduce the total cost of internally matched device.
For realizing above-mentioned target, in the manufacturing process of interior matching capacitance, after completing interior matching capacitance front technique, add the technique for thinning back side once to carborundum or Sapphire Substrate, object avoids interior matching capacitance back side extraction through hole excessively dark, occur that metal is discontinuous, the electric connection of capacitance metal bottom electrode cannot be realized, and add the photoetching of a back side extraction through hole, burn into metallization process.But eliminate the photoetching of bottom electrode from upper surface fairlead of high temperature resistant interior matching capacitance, etching process, also eliminate the metal electrode of lower metal electrode pole extraction from power on, debug in technique in follow-up craft, eliminate again the metal bonding lead-in wire work of interior matching capacitance bottom electrode (grounding electrode).Thus simplify technique on the whole, reduce manufacturing cost, improve the microwave property of interior coupling microwave power transistor; Simultaneously due to the reduction of interior matching capacitance area, also can reduce the volume of interior mesh power transistor further, be conducive to the miniaturization realizing device.
Claims (5)
1. mesh power transistor matching capacitance in a microwave, it is characterized in that: comprise complete interior matching capacitance front technique MIM on capacitance component, the upper capacitance component of MIM comprises substrate (1), the upper surface of described substrate (1) is provided with lower metal electrode (2), described substrate (1) is provided with draws through hole (7), the lower surface of described substrate (1) is provided with lower metal electrode extraction electrode (10), and a part for described lower metal electrode extraction electrode (10) is electrically connected with described lower metal electrode (2) through described extraction through hole (7).
2. mesh power transistor matching capacitance in microwave as claimed in claim 1, it is characterized in that: on described MIM, capacitance component comprises substrate (1), the upper surface of described substrate (1) is provided with lower metal electrode (2), the outside of lower metal electrode (2) is enclosed with insulating medium layer (3), and the upper surface of described insulating medium layer (3) is provided with electrode of metal (5).
3. mesh power transistor matching capacitance in microwave as claimed in claim 1, is characterized in that: described lower metal electrode extraction electrode (10) comprises the metal seed layer (8) being positioned at upper strata and the metal thickening layer (9) being positioned at metal seed layer (8) lower surface.
4. mesh power transistor matching capacitance in microwave as claimed in claim 3, is characterized in that: the making material of described metal seed layer (8) is titanium-Jin or titanium tungsten-Jin, and the making material of described metal thickening layer (9) is gold.
5. mesh power transistor matching capacitance in microwave as claimed in claim 1, is characterized in that: described substrate (1) is carborundum or sapphire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201520879476.7U CN205092248U (en) | 2015-11-06 | 2015-11-06 | It matches electric capacity to match power transistor in microwave |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520879476.7U CN205092248U (en) | 2015-11-06 | 2015-11-06 | It matches electric capacity to match power transistor in microwave |
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| CN205092248U true CN205092248U (en) | 2016-03-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280727A (en) * | 2015-11-06 | 2016-01-27 | 中国电子科技集团公司第十三研究所 | Microwave internal matching power transistor matching capacitor and manufacturing method thereof |
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- 2015-11-06 CN CN201520879476.7U patent/CN205092248U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280727A (en) * | 2015-11-06 | 2016-01-27 | 中国电子科技集团公司第十三研究所 | Microwave internal matching power transistor matching capacitor and manufacturing method thereof |
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