CN205657060U - Beam lead terahertz is schottky diode now - Google Patents
Beam lead terahertz is schottky diode now Download PDFInfo
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- CN205657060U CN205657060U CN201620478202.1U CN201620478202U CN205657060U CN 205657060 U CN205657060 U CN 205657060U CN 201620478202 U CN201620478202 U CN 201620478202U CN 205657060 U CN205657060 U CN 205657060U
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Abstract
The utility model discloses a beam lead terahertz is schottky diode now relates to schottky diode technical field. The diode includes terahertz schottky diode body now, the terahertz is equipped with positive pole and negative pole now on the schottky diode body, the lateral surface of positive pole and negative pole respectively be equipped with one to the beam lead that diode body extends in the outside, just beam lead extends to the length of diode body's outside part is different. The diode stretches out the metal strip of different length on positive pole and negative pole, when the face -down bonding was applied to to the diode, from back when seeing, through the difference of beam lead length, the positive pole and the negative pole of difference diode had reduced the technology degree of difficulty of flip chip bonding, have improved the identifiability and the workability of diode face -down bonding.
Description
Technical field
This utility model relates to Schottky diode technical field, particularly relates to a kind of negative electrode and beam lead Terahertz Schottky diode of anode distinguishing diode when facilitating face-down bonding.
Background technology
Terahertz (THz) ripple refers to frequency electromagnetic wave in the range of 0.3-3THz, and the THz wave frequency of broad sense refers to 100GHz to 10THz, wherein 1THz=1000GHz.THz ripple occupies the most special position in electromagnetic spectrum, and THz technology is the very important intersection Disciplinary Frontiers that International Technology circle is generally acknowledged.
In THz frequency low end range, semiconductor device frequency-doubling method is generally used to obtain Solid Source.The method be by millimeter wave by non-linear semiconductor device frequency multiplication to THz frequency range, have compact conformation, can easily be accommodated, the life-span long, the advantages such as waveform is controlled, room temperature work.Current short wavelength's submillimeter wave, THz Solid Source rely primarily on the mode of frequency multiplication and obtain.Efficient frequency multiplication not only circuit structure is simple, shg efficiency is higher to utilize schottky diode device to realize, and also has higher output power that oscillation source has, frequency multiplication amplifier chain high frequency stability, the advantage of low phase noise concurrently；Schottky diode device can involve submillimeter wave frequency range in the whole millimeter of 30GHz ~ 3000GHz by steady operation simultaneously.Currently advanced varactor research institutions such as (produce) RAL and VDI may operate in 3.1THz, has good continuous wave power and efficiency.Therefore the efficient frequency doubling technology of Schottky diode is very suitable for high performance millimeter wave, submillimeter wave, THz system, is the THz frequency source technology of a kind of great research, using value.Owing to having minimum junction capacity and series resistance, high electron drift velocity, plane GaAs Schottky diode is widely used in THz frequency range, is the solid electronic device of core in THz technical field.
The most conventional GaAs base Terahertz frequency multiplication Schottky diode, mainly there are two kinds of forms, one is not have the Schottky diode of beam (beam lead), this diode is assembling when, directly circuit is connected with the Pad (pressure point) of diode, owing to the Pad stock size of diode is less, face-down bonding when, difficulty is bigger.In order to reduce the diode difficulty when face-down bonding, develop the GaAs base Terahertz frequency multiplication Schottky diode with beam, Schottky diode with beam, which reduce the difficulty of diode face-down bonding, but the beam of Schottky diode is all at diode two ends at present, the metal stretched by a fritter is as beam, as shown in Figure 1.But at present with the diode of beam beam lead, the length of its beam lead is consistent.
For either for there being the diode of equal length beam lead, or for there is no the diode of beam lead for, during the use of diode, diode needs face-down bonding, to reduce the high frequency parasitic parameters such as inductance.Face-down bonding when, such as in the middle of the application of balanced type fundamental mixer, need two even four Schottky diode single tubes, assembling when, owing to can only see the back side of diode, it is impossible to distinguish anode and the negative electrode of Schottky diode, cause assembling unsuccessfully, need all to pick out Schottky diode, the Schottky diode more renewed.Due to from the back side cannot the cathode anode of identification diode, cause technology difficulty to increase, result in the waste of device to a certain extent, cause the increase of scientific research cost.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of beam lead Terahertz Schottky diode, and described diode reduces the technology difficulty of flip chip bonding, improves identifiability and the workability of diode face-down bonding.
For solving above-mentioned technical problem, technical solution adopted in the utility model is: a kind of beam lead Terahertz Schottky diode, including Terahertz Schottky diode body, described Terahertz Schottky diode body is provided with anode and negative electrode, it is characterized in that: the lateral surface of described anode and negative electrode is respectively provided with a beam lead extended to described diode outer body, and the length of the described beam lead Outboard Sections that extends to described diode body is different.
Further technical scheme is: the beam lead length connected on described anode is more than the beam lead length connected on described negative electrode.
nullFurther technical scheme is: described diode body includes half-insulating GaAs substrate，The upper surface of described GaAs substrate is provided with passivation layer，Described passivation layer is two continuous print circuluses，The upper surface of the GaAs substrate in each circulus is provided with heavy doping GaAs layer，The upper surface of each heavy doping GaAs layer is step-like，The upper surface of each heavy doping GaAs layer is provided with ohmic contact metal layer and low-doped GaAs layer，And described low-doped GaAs layer is positioned at the inner side of described diode body，The upper surface of each ohmic contact metal layer is provided with a metal thickening layer，The upper surface of one of them low-doped GaAs layer is provided with a Schottky contact metal layer，The side surrounding of described metal thickening layer and Schottky contact metal layer has silicon dioxide layer，The metal thickening layer being wherein positioned at another low-doped GaAs layer side electrically connects with described Schottky contact metal layer，Described beam lead lays respectively at the outside of described metal thickening layer.
Further technical scheme is: the making material of described passivation layer is silicon dioxide, silicon nitride or diamond.
Further technical scheme is: the metal of described ohmic contact metal layer is from bottom to top for Ni/Au/ Ge/Ni/Au.
Further technical scheme is: described Schottky contact metal layer is from bottom to top for Ti/Pt/Au.
Further technical scheme is: the making material of described beam lead is Au.
Further technical scheme is: a length of 40 microns-60 microns of the beam lead being connected with negative electrode, a length of 80 microns-150 microns of the beam lead being connected with anode.
Further technical scheme is: the thickness of described beam lead is 1.5 microns-6 microns.
Further technical scheme is: the doping content of described heavy doping GaAs layer is 10^18cm-3Magnitude, the doping content of low-doped GaAs layer is 1e16cm-3To 5e17cm-3。
Use and have the beneficial effects that produced by technique scheme: described diode stretches out the bonding jumper of different length on anode and negative electrode, diode applications in face-down bonding time, the when of in terms of the back side, difference by beam lead length, the anode of difference diode and negative electrode, reduce the technology difficulty of flip chip bonding, improve identifiability and the workability of diode face-down bonding.
Accompanying drawing explanation
Fig. 1 is the plan structure schematic diagram of prior art beam lead Terahertz Schottky diode；
Fig. 2 is the plan structure schematic diagram of diode described in the utility model；
Fig. 3 is that the A-A of diode shown in Fig. 2 is to sectional structure schematic diagram；
Wherein: 1, passivation layer 2, silicon dioxide layer 3, ohmic contact metal layer 4, metal thickening layer 5, GaAs substrate 6, heavy doping GaAs layer 7, low-doped GaAs layer 8, Schottky contact metal layer 9, beam lead.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present utility model rather than whole embodiments.Based on the embodiment in this utility model, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of this utility model protection.
Elaborate a lot of detail in the following description so that fully understanding this utility model, but this utility model can also use other to be different from alternate manner described here to be implemented, those skilled in the art can do similar popularization in the case of this utility model intension, and therefore this utility model is not limited by following public specific embodiment.
As Figure 2-3, the utility model discloses a kind of beam lead Terahertz Schottky diode, including Terahertz Schottky diode body, described Terahertz Schottky diode body is provided with anode and negative electrode, the lateral surface of described anode and negative electrode is respectively provided with a beam lead 9 extended to described diode outer body, and the length of the described beam lead Outboard Sections that extends to described diode body is different, further, it is anode that described beam lead extends to the electrode of the longer beam lead connection of described diode outer body part, shorter for negative electrode.Therefore, generally, beam lead 9 length described anode connected is more than beam lead 9 length connected on described negative electrode.
Described diode body includes that half-insulating GaAs substrate 5, the upper surface of described GaAs substrate 5 are provided with passivation layer 1, and the making material of described passivation layer 1 can be the diamond that silicon dioxide, silicon nitride and heat dispersion are optimal.Described passivation layer 1 is two continuous print circuluses, the upper surface of the GaAs substrate in each circulus is provided with heavy doping GaAs layer 6, the upper surface of each heavy doping GaAs layer 6 is step-like, the upper surface of each heavy doping GaAs layer 6 is provided with ohmic contact metal layer 3 and low-doped GaAs layer 7, and described low-doped GaAs layer 7 is positioned at the inner side of described diode body, the doping content of described heavy doping GaAs layer 6 is 10^18cm-3Magnitude, the doping content of low-doped GaAs layer 7 is 1e16cm-3To 5e17cm-3。
The upper surface of each ohmic contact metal layer 3 is provided with a metal thickening layer 4, the upper surface of one of them low-doped GaAs layer 7 is provided with a Schottky contact metal layer 8, the side surrounding of described metal thickening layer 4 and Schottky contact metal layer 8 has silicon dioxide layer 2, the metal thickening layer 4 being wherein positioned at another low-doped GaAs layer 7 side electrically connects (both interconnective parts form air bridges) with described Schottky contact metal layer 8, and described beam lead 9 lays respectively at the outside of described metal thickening layer 4.Preferably, the metal of described ohmic contact metal layer 3 is Ni/Au/ Ge/Ni/Au from bottom to top, and described Schottky contact metal layer 8 is Ti/Pt/Au from bottom to top.
Terahertz Schottky diode described in the utility model can be realized by ripe Schottky diode processing technique, the manufacturing technology of Schottky diode is the most ripe at present, including cathode ohmic contact, anode Schottky evaporation of metal, air bridges connects and isolation channel corrosion, makes passivation layer.After front processing technique completes, carry out the thinning of the back side and burst, produce Terahertz Schottky diode.
The beam lead that size that wherein this utility model is proposed is different, directly can make in air bridges connects this processing step；Can also be after air bridges connect and complete, individually through photoetching, plating makes.In order to ensure the mechanical strength of beam lead, the thickness of beam lead should control at 1.5 microns to 6 microns.
For negative electrode and the anode of effective identification diode, the length difference of two beam leads is more preferably greater than 20 microns.As shown in Figure 2, left side beam lead length can be 40 microns-60 microns, and the right beam lead length is greater than 80 microns, and in order to ensure mechanical strength, the length of the right beam lead will be less than 150 microns.When being applied to flip chip bonding, in terms of the back side, the longer one end of beam lead represents the anode of diode, and the shorter one end of beam lead represents the negative electrode of diode.By the difference of beam lead length, the anode of difference diode and negative electrode, reduce the technology difficulty of flip chip bonding, improve identifiability and the workability of diode face-down bonding.
Claims (10)
1. a beam lead Terahertz Schottky diode, including Terahertz Schottky diode body, described Terahertz Schottky diode body is provided with anode and negative electrode, it is characterized in that: the lateral surface of described anode and negative electrode is respectively provided with a beam lead (9) extended to described diode outer body, and the length of the described beam lead Outboard Sections that extends to described diode body is different.
2. beam lead Terahertz Schottky diode as claimed in claim 1, it is characterised in that: on described anode, beam lead (9) length of welding is more than beam lead (9) length of welding on described negative electrode.
null3. beam lead Terahertz Schottky diode as claimed in claim 1，It is characterized in that: described diode body includes half-insulating GaAs substrate (5)，The upper surface of described GaAs substrate (5) is provided with passivation layer (1)，Described passivation layer (1) is two continuous print circuluses，The upper surface of the GaAs substrate in each circulus is provided with heavy doping GaAs layer (6)，The upper surface of each heavy doping GaAs layer (6) is step-like，The upper surface of each heavy doping GaAs layer (6) is provided with ohmic contact metal layer (3) and low-doped GaAs layer (7)，And described low-doped GaAs layer (7) is positioned at the inner side of described diode body，The upper surface of each ohmic contact metal layer (3) is provided with a metal thickening layer (4)，The upper surface of one of them low-doped GaAs layer (7) is provided with a Schottky contact metal layer (8)，The side surrounding of described metal thickening layer (4) and Schottky contact metal layer (8) has silicon dioxide layer (2)，The metal thickening layer (4) being wherein positioned at another low-doped GaAs layer (7) side electrically connects with described Schottky contact metal layer (8)，Described beam lead (9) lays respectively at the outside of described metal thickening layer (4).
4. beam lead Terahertz Schottky diode as claimed in claim 3, it is characterised in that: the making material of described passivation layer (1) is silicon dioxide, silicon nitride or diamond.
5. beam lead Terahertz Schottky diode as claimed in claim 3, it is characterised in that: the metal of described ohmic contact metal layer (3) is Ni/Au/ Ge/Ni/Au from bottom to top.
6. beam lead Terahertz Schottky diode as claimed in claim 3, it is characterised in that: described Schottky contact metal layer (8) is Ti/Pt/Au from bottom to top.
7. beam lead Terahertz Schottky diode as claimed in claim 3, it is characterised in that: the making material of described beam lead (9) is Au.
8. beam lead Terahertz Schottky diode as claimed in claim 1, it is characterised in that: a length of 40 microns-60 microns of the beam lead (9) being connected with negative electrode, a length of 80 microns-150 microns of the beam lead being connected with anode (9).
9. beam lead Terahertz Schottky diode as claimed in claim 1, it is characterised in that: the thickness of described beam lead (9) is 1.5 microns-6 microns.
10. beam lead Terahertz Schottky diode as claimed in claim 3, it is characterised in that: the doping content of described heavy doping GaAs layer (6) is 10^18cm-3Magnitude, the doping content of low-doped GaAs layer (7) is 1e16cm-3To 5e17cm-3。
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620478202.1U CN205657060U (en) | 2016-05-24 | 2016-05-24 | Beam lead terahertz is schottky diode now |
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| CN201620478202.1U CN205657060U (en) | 2016-05-24 | 2016-05-24 | Beam lead terahertz is schottky diode now |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845742A (en) * | 2016-05-24 | 2016-08-10 | 中国电子科技集团公司第十三研究所 | Beam lead type terahertz schottky diode |
| CN109037874A (en) * | 2018-07-26 | 2018-12-18 | 胡南 | The method of beam lead is made on quartzy circuit |
-
2016
- 2016-05-24 CN CN201620478202.1U patent/CN205657060U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845742A (en) * | 2016-05-24 | 2016-08-10 | 中国电子科技集团公司第十三研究所 | Beam lead type terahertz schottky diode |
| CN105845742B (en) * | 2016-05-24 | 2023-12-19 | 中国电子科技集团公司第十三研究所 | Beam lead terahertz Schottky diode |
| CN109037874A (en) * | 2018-07-26 | 2018-12-18 | 胡南 | The method of beam lead is made on quartzy circuit |
| CN109037874B (en) * | 2018-07-26 | 2020-08-25 | 胡南 | Method for manufacturing beam lead on quartz circuit |
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