CN204204868U - Class mixing GaAs Terahertz Schottky frequency tripling diode - Google Patents

Abstract

The utility model discloses a frequency-mixing GaAs terahertz Schottky triple frequency diode. The first metal electrode layer on the first metal electrode assembly connects with the second Schottky on the first diode assembly through a metal-air bridge. The contact metal layer is connected, the second metal electrode layer on the first diode assembly is connected to the first Schottky contact metal layer on the second metal electrode assembly through a metal-air bridge, and the first metal electrode layer on the second metal electrode assembly The electrode layer is connected to the second Schottky contact metal layer on the second diode assembly through the metal-air bridge, and the second metal electrode layer on the second diode assembly is connected to the second metal electrode layer on the first metal electrode assembly through the metal-air bridge. The first Schottky contact metal layer is connected. The diode is a supplement to the existing frequency tripler diode type, and when used as a frequency tripler, it can effectively suppress the second harmonic and improve the frequency doubler efficiency. At the same time, the diode adopts the form of two tube cores connected in series first and then connected in reverse parallel, which can effectively improve the power resistance performance of the diode and increase the output power.

Description

Mixer-like GaAs terahertz Schottky tripler diode

technical field

The utility model relates to the technical field of diodes, in particular to a frequency-mixing GaAs terahertz Schottky triple frequency diode.

Background technique

Terahertz (THz) waves refer to electromagnetic waves with a frequency in the range of 0.3-3THz. The broad frequency range of THz waves is 100GHz-10THz, where 1THz=1000GHz. THz waves occupy a very special position in the electromagnetic spectrum, and THz technology is recognized as a very important cross-frontier field by the international scientific and technological community.

In the low-end range of THz frequency, the solid-state source is usually obtained by frequency doubling of semiconductor devices. This method doubles the frequency of the millimeter wave to the THz frequency band through a nonlinear semiconductor device, and has the advantages of compact structure, easy adjustment, long life, controllable waveform, and normal temperature operation. At present, short-wavelength submillimeter wave and THz solid-state sources are mainly obtained by frequency doubling. The use of Schottky diode devices to achieve high-efficiency frequency multiplication not only has a simple circuit structure and high frequency multiplication efficiency, but also has the advantages of high output power of the oscillation source, high frequency stability of the frequency multiplication amplifier chain, and low phase noise; at the same time, Xiao Tertyl diode devices can work stably in the entire millimeter wave and submillimeter wave frequency bands from 30GHz to 3000GHz. At present, advanced varactor diodes (produced by research institutions such as RAL and VDI) can already work at 3.1THz, and have good continuous wave power and efficiency. Therefore, Schottky diode high-efficiency frequency multiplication technology is very suitable for high-performance millimeter wave, submillimeter wave, and THz systems, and is a THz frequency source technology with great research and application value. Due to its extremely small junction capacitance and series resistance, and high electron drift speed, planar GaAs Schottky diodes have been widely used in the THz frequency band and are the core solid-state electronic devices in the THz technology field.

For the terahertz frequency band, the current main way to expand the frequency source is to achieve double and triple frequency through GaAs-based Schottky diodes. Compared with triple frequency, the efficiency of double frequency is generally higher than that of the latter, and the output frequency It is twice the frequency of the input fundamental wave, and the output frequency of the triple frequency is three times that of the input fundamental wave. Compared with the double frequency, the frequency of the triple frequency increases faster. Most of the frequency tripler diodes commonly used at present are multiple tube cores connected in series in a straight line, the purpose is to increase the power capacity, and the Schottky diode is directly welded on the metal cavity. But in fact, anti-parallel Schottky diodes, that is, the structure of mixing diodes commonly used in mixers at present, can effectively suppress the second harmonic when used for triple frequency multiplication and improve the efficiency of third frequency multiplication. efficiency. If a few more anode junctions are made, the power withstand performance of the Schottky diode can be improved.

Utility model content

The technical problem to be solved by the utility model is to provide a frequency-mixing GaAs terahertz Schottky frequency tripler diode. The diode is a supplement to the existing frequency tripler diode type. Harmonics, improve frequency multiplication efficiency. At the same time, the diode adopts the form of two tube cores connected in series first and then connected in reverse parallel, which can effectively improve the power resistance performance of the diode and increase the output power.

In order to solve the above-mentioned technical problems, the technical solution adopted by the utility model is: a kind of frequency-mixing GaAs terahertz Schottky frequency tripler diode, characterized in that: the second diode includes a first metal electrode located on the substrate assembly, a second metal electrode assembly, a first diode assembly and a second diode assembly, the first diode assembly and the second diode assembly being located between the first metal electrode assembly and the second metal electrode assembly Between, the first metal electrode assembly and the second metal electrode assembly are the first heavily doped GaAs layer, the first low doped GaAs layer, the first silicon dioxide layer and the first metal electrode layer from bottom to top, the The first metal electrode layer is embedded in the first heavily doped GaAs layer, the first lowly doped GaAs layer and the first silicon dioxide layer, and the height of the upper surface of the first metal electrode layer is greater than that of the first silicon dioxide layer The height of the upper surface, the first Schottky contact metal layer is embedded in the first silicon dioxide layer, and the first Schottky contact metal layer is in contact with the first low-doped GaAs layer; the first two The pole tube component and the second diode component are the second heavily doped GaAs layer, the second low doped GaAs layer, the second silicon dioxide layer and the second metal electrode layer from bottom to top, and the second metal electrode layer embedded in the second heavily doped GaAs layer, the second lowly doped GaAs layer and the second silicon dioxide layer, and the height of the upper surface of the second metal electrode layer is greater than the height of the upper surface of the second silicon dioxide layer, A second Schottky contact metal layer is embedded in the second silicon dioxide layer, and the second Schottky contact metal layer is in contact with the second low-doped GaAs layer;

The first metal electrode layer on the first metal electrode assembly is connected to the second Schottky contact metal layer on the first diode assembly through a metal-air bridge, and the second metal electrode layer on the first diode assembly The electrode layer is connected to the first Schottky contact metal layer on the second metal electrode assembly through a metal-air bridge, and the first metal electrode layer on the second metal electrode assembly is connected to the second diode assembly through a metal-air bridge. The second Schottky contact metal layer on the second diode assembly is connected to the first Schottky contact metal layer on the first metal electrode assembly through a metal-air bridge.

A further technical solution is: a passivation layer is provided around the first heavily doped GaAs layer and the second heavily doped GaAs layer, and the height of the passivation layer is lower than that of the first and second heavily doped GaAs layers the height of.

A further technical solution is that: the first metal electrode layer and the second metal electrode layer include an ohmic contact layer on the lower layer and a metal thickening layer on the upper layer.

A further technical solution is: the ohmic contact layer is a multi-layer structure, consisting of a Ni layer, an Au layer, a Ge layer, a Ni layer, and an Au layer from bottom to top.

A further technical solution is that: the first Schottky contact metal layer and the second Schottky contact metal layer are multi-layer structures, including a Ti layer, a Pt layer, and an Au layer from bottom to top.

The beneficial effect of adopting the above technical solution is that the diode is a supplement to the existing frequency tripler diode type, and when used for frequency tripler, it can effectively suppress the second harmonic and improve the frequency doubler efficiency. At the same time, the diode adopts the form of two tube cores connected in series first and then connected in reverse parallel, which can effectively improve the power resistance performance of the diode and increase the output power.

Description of drawings

Below in conjunction with accompanying drawing and specific embodiment, the utility model is described in further detail.

Fig. 1 is the top view structural representation of the utility model;

Fig. 2 is a schematic cross-sectional structure diagram of A-A direction in Fig. 1;

Among them: 1. Substrate 2. First metal electrode assembly 3. Second metal electrode assembly 4. First diode assembly 5. Second diode assembly 6. First heavily doped GaAs layer 7. First low Doped GaAs 8, the first silicon dioxide layer 9, the first metal electrode layer 10, the first Schottky contact metal layer 11, the second heavily doped GaAs layer 12, the second low-doped GaAs 13, the second two Silicon oxide layer 14, second metal electrode layer 15, second Schottky contact metal layer 16, metal air bridge 17, passivation layer 18, ohmic contact layer 19, metal thickening layer.

Detailed ways

Below in conjunction with the accompanying drawings in the utility model embodiment, the technical solution in the utility model embodiment is clearly and completely described, obviously, the described embodiment is only a part of the utility model embodiment, rather than all implementation example. Based on the embodiments of the present utility model, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present utility model.

In the following description, a lot of specific details have been set forth in order to fully understand the utility model, but the utility model can also be implemented in other ways that are different from those described here, and those skilled in the art can do so without violating the connotation of the utility model. Under the circumstances, similar promotion is done, so the utility model is not limited by the specific embodiments disclosed below.

As shown in Figures 1 and 2, the utility model discloses a frequency-mixing GaAs terahertz Schottky frequency tripler diode. The diode includes a first metal electrode assembly 2 on a substrate 1, a second metal electrode assembly The electrode assembly 3, the first diode assembly 4 and the second diode assembly 5, the first diode assembly 4 and the second diode assembly 5 are located at the first metal electrode assembly 2 and the second metal electrode assembly 3, the first diode assembly 4 and the second diode assembly 5 are also arranged at intervals. The first metal electrode assembly 2 and the second metal electrode assembly 3 are the first heavily doped GaAs layer 6, the first low doped GaAs7, the first silicon dioxide layer 8 and the first metal electrode layer 9 from bottom to top. ; the first metal electrode layer 9 is embedded in the first heavily doped GaAs layer 6, the first lowly doped GaAs layer 7 and the first silicon dioxide layer 8, and the upper surface of the first metal electrode layer 9 The height is greater than the height of the upper surface of the first silicon dioxide layer 8, the first Schottky contact metal layer 10 is embedded in the first silicon dioxide layer 8, and the first Schottky contact metal layer 10 and the first low The doped GaAs layer 7 is in contact.

As shown in FIG. 2, the first diode assembly 4 and the second diode assembly 5 are, from bottom to top, a second heavily doped GaAs layer 11, a second lowly doped GaAs 12, and a second silicon dioxide layer. 13 and a second metal electrode layer 14, the second metal electrode layer 14 is embedded in the second heavily doped GaAs layer 11, the second lowly doped GaAs layer 12 and the second silicon dioxide layer 13, and the second The height of the upper surface of the second metal electrode layer 14 is greater than the height of the upper surface of the second silicon dioxide layer 13, the second Schottky contact metal layer 15 is embedded in the second silicon dioxide layer 13, and the second Schottky The contact metal layer 15 is in contact with the second low-doped GaAs layer 12 .

A passivation layer 17 is provided around the first heavily doped GaAs layer 6 and the second heavily doped GaAs layer 11, and the height of the passivation layer 17 is lower than that of the first and second heavily doped GaAs layers . The first metal electrode layer 9 and the second metal electrode layer 14 include an ohmic contact layer 18 on the lower layer and a thickened metal layer 19 on the upper layer. The ohmic contact layer 18 is a multi-layer structure, from bottom to top is Ni layer, Au layer, Ge layer, Ni layer, Au layer. The first Schottky contact metal layer 10 and the second Schottky contact metal layer 15 are multi-layer structures, including Ti layer, Pt layer and Au layer from bottom to top.

The doping elements of the low-doped GaAs layer and the heavily-doped GaAs layer are group IV elements, and the doping concentration of heavily-doped GaAs is generally on the order of 10 ¹⁸ cm ^-3 , and the concentration of low-doped GaAs is 1×10 ¹⁶ cm ^{-3 3} to 5×10 ¹⁷ cm ^-3 .

The first metal electrode layer 9 on the first metal electrode assembly 2 is connected to the second Schottky contact metal layer 15 on the first diode assembly 4 through a metal-air bridge 16, and the first diode assembly The second metal electrode layer 14 on the second metal electrode assembly 3 is connected to the first Schottky contact metal layer 10 on the second metal electrode assembly 3 through a metal-air bridge 16, and the first metal electrode layer 9 on the second metal electrode assembly 3 The metal-air bridge 16 is connected to the second Schottky contact metal layer 15 on the second diode assembly 5, and the second metal electrode layer 14 on the second diode assembly 5 is connected to the second metal-air bridge 16 through the metal-air bridge 16. A metal electrode assembly 2 is connected to the first Schottky contact metal layer 10 .

The diode processing technology described in the utility model is realized. At present, the manufacturing technology of Schottky diodes is mature at home and abroad, including cathode ohmic contact, anode Schottky metal evaporation, air bridge (metal-air bridge) connection and isolation tank corrosion, Make a passivation layer. After the front processing is completed, the back is thinned and sliced to produce a terahertz Schottky diode. The diode is a supplement to the existing frequency tripler diode type, and when used as a frequency tripler, it can effectively suppress the second harmonic and improve the frequency doubler efficiency. At the same time, the diode adopts the form of two tube cores connected in series first and then connected in reverse parallel, which can effectively improve the power resistance performance of the diode and increase the output power.

Claims (5)

1. A type of frequency-mixing GaAs terahertz Schottky triple frequency diode, characterized in that: the diode comprises a first metal electrode assembly (2) on a substrate (1), a second metal electrode assembly ( 3), the first diode assembly (4) and the second diode assembly (5), the first diode assembly (4) and the second diode assembly (5) are located in the first metal electrode assembly (2) and the second metal electrode assembly (3), the first metal electrode assembly (2) and the second metal electrode assembly (3) from bottom to top are the first heavily doped GaAs layer (6), The first low-doped GaAs (7), the first silicon dioxide layer (8) and the first metal electrode layer (9), the first metal electrode layer (9) is embedded in the first heavily-doped GaAs layer (6), the first low-doped GaAs layer (7) and the first silicon dioxide layer (8), and the height of the upper surface of the first metal electrode layer (9) is greater than that of the first silicon dioxide layer (8) The height of the surface, the first Schottky contact metal layer (10) is embedded in the first silicon dioxide layer (8), and the first Schottky contact metal layer (10) and the first low-doped GaAs layer (7) are in contact; the first diode assembly (4) and the second diode assembly (5) from bottom to top are the second heavily doped GaAs layer (11), the second low doped GaAs ( 12), the second silicon dioxide layer (13) and the second metal electrode layer (14), the second metal electrode layer (14) is embedded in the second heavily doped GaAs layer (11), the second The low-doped GaAs layer (12) and the second silicon dioxide layer (13), and the height of the upper surface of the second metal electrode layer (14) is greater than the height of the upper surface of the second silicon dioxide layer (13), the second Xiao The Tetky contact metal layer (15) is embedded in the second silicon dioxide layer (13), and the second Schottky contact metal layer (15) is in contact with the second low-doped GaAs layer (12); The first metal electrode layer (9) on the first metal electrode assembly (2) is in contact with the second Schottky contact metal layer (15) on the first diode assembly (4) through a metal-air bridge (16) connection, the second metal electrode layer (14) on the first diode assembly (4) is connected to the first Schottky contact metal layer (10) on the second metal electrode assembly (3) through a metal-air bridge ( 16) Connection, the first metal electrode layer (9) on the second metal electrode assembly (3) is connected to the second Schottky contact metal on the second diode assembly (5) through the metal-air bridge (16) layer (15), the second metal electrode layer (14) on the second diode assembly (5) is connected to the first Schottky on the first metal electrode assembly (2) through a metal-air bridge (16) The contact metal layer (10) is connected. 2. The quasi-frequency mixing GaAs terahertz Schottky tripler diode according to claim 1, characterized in that: the first heavily doped GaAs layer (6) and the second heavily doped GaAs layer (11) A passivation layer (17) is provided around the surrounding area, and the height of the passivation layer (17) is lower than that of the first and second heavily doped GaAs layers. 3. The frequency-mixing GaAs terahertz Schottky frequency tripler diode according to claim 1, characterized in that: the first metal electrode layer (9) and the second metal electrode layer (14) include An ohmic contact layer (18) and an upper metal thickening layer (19). 4. The quasi-frequency mixing GaAs terahertz Schottky tripler diode according to claim 3, characterized in that: the ohmic contact layer (18) is a multilayer structure, consisting of a Ni layer and an Au layer from bottom to top , Ge layer, Ni layer, Au layer. 5. The frequency-mixing GaAs terahertz Schottky frequency tripler diode according to claim 1, characterized in that: the first Schottky contact metal layer (10) and the second Schottky contact metal layer ( 15) It is a multi-layer structure, with Ti layer, Pt layer and Au layer from bottom to top.