CN104465796A - Kind mixing GaAs terahertz schottky third harmonic generation diode - Google Patents
Kind mixing GaAs terahertz schottky third harmonic generation diode Download PDFInfo
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- CN104465796A CN104465796A CN201410684526.6A CN201410684526A CN104465796A CN 104465796 A CN104465796 A CN 104465796A CN 201410684526 A CN201410684526 A CN 201410684526A CN 104465796 A CN104465796 A CN 104465796A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 123
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 52
- 235000012239 silicon dioxide Nutrition 0.000 claims description 26
- 239000000377 silicon dioxide Substances 0.000 claims description 26
- 238000002161 passivation Methods 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 230000008719 thickening Effects 0.000 claims description 4
- 239000013589 supplement Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000001502 supplementing effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind mixing GaAs terahertz schottky third harmonic generation diode. A first metal electrode layer on a first metal electrode assembly is connected with a second schottky contact metal layer on a first diode assembly through a metal air bridge, a second metal electrode layer on the first diode assembly is connected with a first schottky contact metal layer on a second metal electrode assembly through a metal air bridge, a first metal electrode layer on a second metal electrode assembly is connected with a second schottky base contact metal layer on a second diode assembly through a metal air bridge, and a second metal electrode layer on the second diode assembly is connected with a first schottky base contact metal layer on a first metal electrode assembly through a metal air bridge. The diode is the supplement of an existing three-harmonic-generation diode type, when the diode is used for three harmonic generation, second harmonics can be effectively inhibited, and the frequency doubling efficiency is improved. Meanwhile, the mode that two dies are connected in series and then connected in parallel reversely is adopted, the power resisting performance of the diode can be effectively promoted, and the output power is improved.
Description
Technical field
The present invention relates to diode technologies field, particularly relate to a kind mixing GaAs Terahertz Schottky frequency tripling diode.
Background technology
Terahertz (THz) ripple refers to the electromagnetic wave of frequency within the scope of 0.3-3THz, and the THz wave frequency range of broad sense is 100GHz-10THz, wherein 1THz=1000GHz.THz ripple occupies very special position in electromagnetic spectrum, and THz technology is the very important intersection Disciplinary Frontiers that International Technology circle is generally acknowledged.
In THz frequency low end range, semiconductor device frequency-doubling method is usually adopted to obtain Solid Source.The method be by millimeter wave by non-linear semiconductor device frequency multiplication to THz frequency range, there is compact conformation, be easy to regulate, the life-span is long, the advantages such as waveform is controlled, normal temperature work.Current short wavelength's submillimeter wave, THz Solid Source mainly rely on the mode of frequency multiplication to obtain.Not only circuit structure is simple, shg efficiency is higher to utilize schottky diode device to realize efficient frequency multiplication, also has the advantage of higher output power that oscillation source has, frequency multiplication amplifier chain high frequency stability, low phase noise concurrently; Simultaneously schottky diode device Absorbable organic halogens works in the whole millimeter of 30GHz-3000GHz and involves submillimeter wave frequency range.The variable capacitance diode of current advanced person research institutions such as (produce) RAL and VDI can work in 3.1THz, has good continuous wave power and efficiency.Therefore the efficient frequency doubling technology of Schottky diode is very suitable for high performance millimeter wave, submillimeter wave, THz system, is a kind of THz frequency source technology having research, using value.Owing to having minimum junction capacitance and series resistance, high electron drift velocity, planar GaAs Schottky diode is widely used in THz frequency range, is the solid electronic device of core in THz technical field.
For Terahertz frequency range, the major way that current frequency source is expanded realizes two frequencys multiplication and frequency tripling by GaAs based schottky diode, two frequencys multiplication are relative to frequency tripling, its efficiency is generally higher than the latter, output frequency is two times of input fundamental frequency, and the output frequency of frequency tripling is three times of input first-harmonic, frequency tripling is relative to two frequencys multiplication, and frequency upgrading is faster.At present conventional frequency tripling diode be mostly multiple die series together, point-blank, object is to increase power capacity, and Schottky diode is directly welded on metallic cavity simultaneously.But in fact, the Schottky diode of reverse parallel connection, is namely usually used in the mixer diode version of frequency mixer at present, in for frequency tripling, effectively can suppress second harmonic, improve the efficiency of three frequencys multiplication.Make several anode knot if more, then can promote the resistance to power-performance of Schottky diode.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind mixing GaAs Terahertz Schottky frequency tripling diode, and described diode is supplementing of existing frequency tripling diode type, during as frequency tripling, effectively can suppress second harmonic, promotes shg efficiency.Meanwhile, described diode adopts two tube cores first to connect the form of reverse parallel connection again, effectively can promote the resistance to power-performance of diode, improve power output.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind mixing GaAs Terahertz Schottky frequency tripling diode, it is characterized in that: described diode comprises the first metal electrode assembly be positioned on substrate, second metal electrode assembly, first diode assembly and the second diode assembly, described first diode assembly and the second diode assembly are between the first metal electrode assembly and the second metal electrode assembly, described first metal electrode assembly and the second metal electrode assembly are the first heavy doping GaAs layer from top to bottom, first low-doped GaAs, first silicon dioxide layer and the first metal electrode layer, described first metal electrode layer is embedded in described first heavy doping GaAs layer, first low-doped GaAs layer and the first silicon dioxide layer, and the height of the first metal electrode layer upper surface is greater than the height of the first silicon dioxide layer upper surface, first Schottky contact metal layer is embedded in described first silicon dioxide layer, and the first Schottky contact metal layer contacts with the first low-doped GaAs layer, described first diode assembly and the second diode assembly are the second heavy doping GaAs layer, the second low-doped GaAs, the second silicon dioxide layer and the second metal electrode layer from top to bottom, described second metal electrode layer is embedded in described second heavy doping GaAs layer, the second low-doped GaAs layer and the second silicon dioxide layer, and the height of the second metal electrode layer upper surface is greater than the height of the second silicon dioxide layer upper surface, second Schottky contact metal layer is embedded in described second silicon dioxide layer, and the second Schottky contact metal layer contacts with the second low-doped GaAs layer,
The first metal electrode layer on described first metal electrode assembly is connected with the second Schottky contact metal layer on the first diode assembly by metal-air bridge, the first Schottky contact metal layer on the second metal electrode layer on described first diode assembly and the second metal electrode assembly is connect by metal-air bridging, the first metal electrode layer on described second metal electrode assembly is connected with the second Schottky contact metal layer on the second diode assembly by metal-air bridge, the second metal electrode layer on described second diode assembly is connected with the first Schottky contact metal layer on the first metal electrode assembly by metal-air bridge.
Further technical scheme is: the surrounding of described first heavy doping GaAs layer and the second heavy doping GaAs layer is provided with passivation layer, and the height of described passivation layer is lower than the height of the first and second heavy doping GaAs layers.
Further technical scheme is: described first metal electrode layer and the second metal electrode layer comprise the ohmic contact layer being positioned at lower floor and the metal thickening layer being positioned at upper strata.
Further technical scheme is: described ohmic contact layer is sandwich construction, is Ni layer, Au layer, Ge layer, Ni layer, Au layer from bottom to top.
Further technical scheme is: described first Schottky contact metal layer and the second Schottky contact metal layer are sandwich construction, is Ti layer, Pt layer, Au layer from bottom to top.
The beneficial effect adopting technique scheme to produce is: described diode is supplementing of existing frequency tripling diode type, during as frequency tripling, effectively can suppress second harmonic, promotes shg efficiency.Meanwhile, described diode adopts two tube cores first to connect the form of reverse parallel connection again, effectively can promote the resistance to power-performance of diode, improve power output.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Fig. 1 is plan structure schematic diagram of the present invention;
Fig. 2 be in Fig. 1 A-A to sectional structure schematic diagram;
Wherein: 1, substrate 2, first metal electrode assembly 3, second metal electrode assembly 4, first diode assembly 5, second diode assembly 6, first heavy doping GaAs layer 7, first low-doped GaAs 8, first silicon dioxide layer 9, first metal electrode layer 10, first Schottky contact metal layer 11, second heavy doping GaAs layer 12, second low-doped GaAs 13, second silicon dioxide layer 14, second metal electrode layer 15, second Schottky contact metal layer 16, metal-air bridge 17, passivation layer 18, ohmic contact layer 19, metal thickening layer.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
As illustrated in fig. 1 and 2, the invention discloses a kind mixing GaAs Terahertz Schottky frequency tripling diode, described diode comprises the first metal electrode assembly 2, second metal electrode assembly 3, first diode assembly 4 and the second diode assembly 5 be positioned on substrate 1, described first diode assembly 4 and the second diode assembly 5 are between the first metal electrode assembly 2 and the second metal electrode assembly 3, and the first diode assembly 4 and the second diode assembly 5 are also that interval is arranged.Described first metal electrode assembly 2 and the second metal electrode assembly 3 are the low-doped GaAs7 of the first heavy doping GaAs layer 6, first, the first silicon dioxide layer 8 and the first metal electrode layer 9 from top to bottom; Described first metal electrode layer 9 is embedded in described first heavy doping GaAs layer 6, first low-doped GaAs layer 7 and the first silicon dioxide layer 8, and the height of the first metal electrode layer 9 upper surface is greater than the height of the first silicon dioxide layer 8 upper surface, first Schottky contact metal layer 10 is embedded in described first silicon dioxide layer 8, and the first Schottky contact metal layer 10 contacts with the first low-doped GaAs layer 7.
As shown in Figure 2, described first diode assembly 4 and the second diode assembly 5 are the second heavy doping GaAs layer 11 from top to bottom, second low-doped GaAs12, second silicon dioxide layer 13 and the second metal electrode layer 14, described second metal electrode layer 14 is embedded in described second heavy doping GaAs layer 11, second low-doped GaAs layer 12 and the second silicon dioxide layer 13, and the height of the second metal electrode layer 14 upper surface is greater than the height of the second silicon dioxide layer 13 upper surface, second Schottky contact metal layer 15 is embedded in described second silicon dioxide layer 13, and the second Schottky contact metal layer 15 contacts with the second low-doped GaAs layer 12.
The surrounding of described first heavy doping GaAs layer 6 and the second heavy doping GaAs layer 11 is provided with passivation layer 17, and the height of described passivation layer 17 is lower than the height of the first and second heavy doping GaAs layers.Described first metal electrode layer 9 and the second metal electrode layer 14 comprise the ohmic contact layer 18 being positioned at lower floor and the metal thickening layer 19 being positioned at upper strata.Described ohmic contact layer 18 is sandwich construction, is Ni layer, Au layer, Ge layer, Ni layer, Au layer from bottom to top.Described first Schottky contact metal layer 10 and the second Schottky contact metal layer 15 are sandwich construction, are Ti layer, Pt layer, Au layer from bottom to top.
The doped chemical of low-doped GaAs layer and heavy doping GaAs layer is IV race's element, and heavy doping GaAs doping content is generally 10
18cm
-3magnitude, low-doped GaAs, concentration is 1 × 10
16cm
-3to 5 × 10
17cm
-3.
The first metal electrode layer 9 on described first metal electrode assembly 2 is connected with the second Schottky contact metal layer 15 on the first diode assembly 4 by metal-air bridge 16, the second metal electrode layer 14 on described first diode assembly 4 is connected by metal-air bridge 16 with the first Schottky contact metal layer 10 on the second metal electrode assembly 3, the first metal electrode layer 9 on described second metal electrode assembly 3 is connected with the second Schottky contact metal layer 15 on the second diode assembly 5 by metal-air bridge 16, the second metal electrode layer 14 on described second diode assembly 5 is connected with the first Schottky contact metal layer 10 on the first metal electrode assembly 2 by metal-air bridge 16.
Diode processing technology of the present invention realizes, the manufacturing technology of current Schottky diode is all ripe at home and abroad, comprise cathode ohmic contact, anode Schottky evaporation of metal, air bridges (metal-air bridge) connects and isolation channel corrosion, makes passivation layer.After front processing technology completes, carry out the thinning of the back side and burst, produce Terahertz Schottky diode.Described diode is supplementing of existing frequency tripling diode type, during as frequency tripling, effectively can suppress second harmonic, promotes shg efficiency.Meanwhile, described diode adopts two tube cores first to connect the form of reverse parallel connection again, effectively can promote the resistance to power-performance of diode, improve power output.
Claims (5)
1. a kind mixing GaAs Terahertz Schottky frequency tripling diode, it is characterized in that: described diode comprises the first metal electrode assembly (2) be positioned on substrate (1), second metal electrode assembly (3), first diode assembly (4) and the second diode assembly (5), described first diode assembly (4) and the second diode assembly (5) are positioned between the first metal electrode assembly (2) and the second metal electrode assembly (3), described first metal electrode assembly (2) and the second metal electrode assembly (3) are the first heavy doping GaAs layer (6) from top to bottom, first low-doped GaAs(7), first silicon dioxide layer (8) and the first metal electrode layer (9), described first metal electrode layer (9) is embedded in described first heavy doping GaAs layer (6), first low-doped GaAs layer (7) and the first silicon dioxide layer (8), and the height of the first metal electrode layer (9) upper surface is greater than the height of the first silicon dioxide layer (8) upper surface, first Schottky contact metal layer (10) is embedded in described first silicon dioxide layer (8), and the first Schottky contact metal layer (10) contacts with the first low-doped GaAs layer (7), described first diode assembly (4) and the second diode assembly (5) are the second heavy doping GaAs layer (11) from top to bottom, second low-doped GaAs(12), second silicon dioxide layer (13) and the second metal electrode layer (14), described second metal electrode layer (14) is embedded in described second heavy doping GaAs layer (11), second low-doped GaAs layer (12) and the second silicon dioxide layer (13), and the height of the second metal electrode layer (14) upper surface is greater than the height of the second silicon dioxide layer (13) upper surface, second Schottky contact metal layer (15) is embedded in described second silicon dioxide layer (13), and the second Schottky contact metal layer (15) contacts with the second low-doped GaAs layer (12),
The first metal electrode layer (9) on described first metal electrode assembly (2) is connected with the second Schottky contact metal layer (15) on the first diode assembly (4) by metal-air bridge (16), the second metal electrode layer (14) on described first diode assembly (4) is connected by metal-air bridge (16) with the first Schottky contact metal layer (10) on the second metal electrode assembly (3), the first metal electrode layer (9) on described second metal electrode assembly (3) is connected with the second Schottky contact metal layer (15) on the second diode assembly (5) by metal-air bridge (16), the second metal electrode layer (14) on described second diode assembly (5) is connected with the first Schottky contact metal layer (10) on the first metal electrode assembly (2) by metal-air bridge (16).
2. class mixing GaAs Terahertz Schottky frequency tripling diode according to claim 1, it is characterized in that: the surrounding of described first heavy doping GaAs layer (6) and the second heavy doping GaAs layer (11) is provided with passivation layer (17), the height of described passivation layer (17) is lower than the height of the first and second heavy doping GaAs layers.
3. class mixing GaAs Terahertz Schottky frequency tripling diode according to claim 1, is characterized in that: described first metal electrode layer (9) and the second metal electrode layer (14) comprise the ohmic contact layer (18) being positioned at lower floor and the metal thickening layer (19) being positioned at upper strata.
4. class mixing GaAs Terahertz Schottky frequency tripling diode according to claim 3, it is characterized in that: described ohmic contact layer (18) is sandwich construction, is Ni layer, Au layer, Ge layer, Ni layer, Au layer from bottom to top.
5. class mixing GaAs Terahertz Schottky frequency tripling diode according to claim 1, it is characterized in that: described first Schottky contact metal layer (10) and the second Schottky contact metal layer (15) are sandwich construction, is Ti layer, Pt layer, Au layer from bottom to top.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410684526.6A CN104465796A (en) | 2014-11-25 | 2014-11-25 | Kind mixing GaAs terahertz schottky third harmonic generation diode |
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| CN201410684526.6A CN104465796A (en) | 2014-11-25 | 2014-11-25 | Kind mixing GaAs terahertz schottky third harmonic generation diode |
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| CN201410684526.6A Pending CN104465796A (en) | 2014-11-25 | 2014-11-25 | Kind mixing GaAs terahertz schottky third harmonic generation diode |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835859A (en) * | 2015-05-20 | 2015-08-12 | 中国电子科技集团公司第十三研究所 | Deflectable frequency mixing GaAs-based terahertz Schottky diode |
| CN104867968A (en) * | 2015-06-12 | 2015-08-26 | 四川迈格酷科技有限公司 | Terahertz low-frequency GaAs based high-power schottky frequency multiplication diode |
| CN105024647A (en) * | 2015-07-24 | 2015-11-04 | 东南大学 | Full-wave band terahertz frequency tripling module |
| CN106960787A (en) * | 2017-03-30 | 2017-07-18 | 中国科学院微电子研究所 | Damage-free dry over-etching preparation method of Schottky junction |
| CN110993699A (en) * | 2019-12-06 | 2020-04-10 | 中山大学 | Schottky diode and preparation method thereof |
| CN111244190A (en) * | 2020-01-13 | 2020-06-05 | 电子科技大学 | Double-barrier Schottky diode |
| CN112289866A (en) * | 2020-10-12 | 2021-01-29 | 中国电子科技集团公司第十三研究所 | High-power broadband terahertz frequency multiplication Schottky diode structure |
| CN112289865A (en) * | 2020-10-12 | 2021-01-29 | 中国电子科技集团公司第十三研究所 | Biased mixing Schottky diode structure and semiconductor device |
| CN113451419A (en) * | 2021-07-23 | 2021-09-28 | 深圳市电科智能科技有限公司 | Centrosymmetric double-row SiC-based GaN Schottky diode |
| CN113451418A (en) * | 2021-07-23 | 2021-09-28 | 深圳市电科智能科技有限公司 | Centrosymmetric SiC-based GaN Schottky diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835859A (en) * | 2015-05-20 | 2015-08-12 | 中国电子科技集团公司第十三研究所 | Deflectable frequency mixing GaAs-based terahertz Schottky diode |
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| CN111244190B (en) * | 2020-01-13 | 2021-02-12 | 电子科技大学 | Double-barrier Schottky diode |
| CN112289866A (en) * | 2020-10-12 | 2021-01-29 | 中国电子科技集团公司第十三研究所 | High-power broadband terahertz frequency multiplication Schottky diode structure |
| CN112289865A (en) * | 2020-10-12 | 2021-01-29 | 中国电子科技集团公司第十三研究所 | Biased mixing Schottky diode structure and semiconductor device |
| CN112289865B (en) * | 2020-10-12 | 2022-12-13 | 中国电子科技集团公司第十三研究所 | Biased mixing Schottky diode structure and semiconductor device |
| CN112289866B (en) * | 2020-10-12 | 2023-03-28 | 中国电子科技集团公司第十三研究所 | High-power broadband terahertz frequency multiplication Schottky diode structure |
| CN113451419A (en) * | 2021-07-23 | 2021-09-28 | 深圳市电科智能科技有限公司 | Centrosymmetric double-row SiC-based GaN Schottky diode |
| CN113451418A (en) * | 2021-07-23 | 2021-09-28 | 深圳市电科智能科技有限公司 | Centrosymmetric SiC-based GaN Schottky diode |
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