CN110797338A - Radio frequency power chip tube core structure with matching and radio frequency power amplifier - Google Patents
Radio frequency power chip tube core structure with matching and radio frequency power amplifier Download PDFInfo
- Publication number
- CN110797338A CN110797338A CN201911250786.1A CN201911250786A CN110797338A CN 110797338 A CN110797338 A CN 110797338A CN 201911250786 A CN201911250786 A CN 201911250786A CN 110797338 A CN110797338 A CN 110797338A
- Authority
- CN
- China
- Prior art keywords
- metal layer
- capacitor
- radio frequency
- frequency power
- power chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 95
- 239000002184 metal Substances 0.000 claims description 95
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
Abstract
The invention discloses a radio frequency power chip tube core structure with matching, which comprises a capacitor matched with a radio frequency power chip, wherein a first polar plate of the capacitor is electrically connected with a source electrode of the chip through a conductor, and a second polar plate is directly and electrically connected with a drain electrode of the chip through a bonding line, so that a resonant circuit is formed; the source, gate and drain of the chip and the conductor are all disposed on the substrate of the chip. By the mode, the invention can reduce loss and improve efficiency, and the matching structure is arranged at the input end, so that the position occupied by the active tube core is effectively utilized, the output end can be led out as short as possible, and output parasitic is reduced.
Description
Technical Field
The invention relates to the field of radio frequency power amplifiers, in particular to a radio frequency power chip tube core structure with matching and a radio frequency power amplifier.
Background
The rf power amplifier is an important component of a wireless communication system, and is mainly responsible for amplifying a modulated rf signal and transmitting the amplified rf signal through an antenna, and the performance of the rf power amplifier directly determines the core index of the wireless communication system. The radio frequency power chip is a core element of the radio frequency power amplifier, the radio frequency power amplifier usually has 50 ohm input and output impedance characteristics, and the impedance of the end face of the radio frequency power chip is gradually reduced along with the increase of power and frequency, so that difficulty is caused to the design of a matching circuit. In order to obtain better radio frequency performance within a certain bandwidth, a shoot-L matching mode is generally adopted at the output end of a radio frequency power chip, and parallel resonance is generated in a working band through an inductor and an output capacitor of the chip to improve impedance and reduce a Q value. The output capacitor of the radio frequency power chip has both direct current and alternating current signals, so when parallel resonance is generated by using the Shunt-L, the capacitor must be additionally introduced to carry out direct current signal isolation with the reference ground.
At present, a common method is to use a MOS capacitor, bond a lower plate of the capacitor to a heat dissipation flange, and directly connect an output terminal of a radio frequency power chip (hereinafter referred to as "chip") to an upper plate of the capacitor through a bonding wire. However, since the current paths of the resonant circuit respectively flow through the substrate of the chip and the substrate of the capacitor, the current paths of the resonant circuit bring about no small loss, thereby affecting the output power and the efficiency. Meanwhile, because the output has capacitance, the output bonding line is long and has certain parasitics.
Another conventional method is shown in fig. 1, that is, a lower metal layer 14 serving as a source (source) is grown on a chip substrate 11, the metal layer 14 is electrically connected to a lower plate 13 of an MIM capacitor through a metal via 10 and grounded, the MIM capacitor upper plate 12 is electrically connected to a bonding wire pad17 through a bonding wire 19, the bonding wire pad17 and a drain pad15 are both disposed on another lower metal layer 18, and the bonding wire pad17 and the drain pad15 are also electrically connected to the metal layer 18 through a metal via 20 and the like, respectively, and a gate pad16 is located at a substrate edge (die), and dielectric layers (not shown) are disposed between each adjacent metal layer and between the metal layer and the substrate, so that the chip and the MIM capacitor form a resonant circuit shown in fig. 2 and improve output impedance. However, this method still has the drawback that the output bonding line is long and output parasitic occurs.
Disclosure of Invention
The invention aims to provide a radio frequency power chip tube core structure with matching and a radio frequency power amplifier, thereby overcoming the defects of the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a radio frequency power chip tube core structure with matching, which comprises a capacitor matched with a radio frequency power chip, wherein a first polar plate of the capacitor is electrically connected with a source electrode of the chip through a conductor, and a second polar plate is directly and electrically connected with a drain electrode of the chip through a bonding line, so that a resonant circuit is formed; the source, gate and drain of the chip and the conductor are all disposed on the substrate of the chip.
In some embodiments, the source is disposed on a first metal layer on the substrate, a second metal layer is further disposed on the substrate, the first plate of the capacitor is electrically connected to the first metal layer through a conductor, the drain is electrically connected to the second metal layer through a conductor, and the first metal layer is electrically connected to the substrate through a conductor.
In some embodiments, the conductor includes a metal Via structure (Via).
In some embodiments, a dielectric layer is further disposed between the first plate of the capacitor and the first metal layer and/or between the substrate and the first metal layer and/or between the first metal layer and the second metal layer and/or between the drain and the second metal layer.
In some embodiments, the capacitor and the gate are disposed on the same side of the second metal layer, the drain is disposed on the second metal layer at the other side away from the gate or the capacitor, and the capacitor is disposed between the second metal layer and the gate or the gate is disposed between the capacitor and the second metal layer.
In some embodiments, either one of the capacitor and the gate is disposed on an upper side of the second metal layer, and the drain is disposed on the second metal layer at a lower side remote from either one of the capacitor and the gate, the other one of the capacitor and the gate being disposed around and adjacent to the second metal layer.
In some embodiments, the capacitors and/or gates are multiple, wherein two capacitors or two gates are distributed on the left and right sides of a second metal layer.
In some embodiments, bonding lines for connecting the first plate of the capacitor and the drain are distributed on the left and right sides of the second metal layer.
In some embodiments, the second metal layers are disposed at intervals, and at least one gate or at least one capacitor is disposed on both left and right sides of each second metal layer.
In some embodiments, the first plate of the capacitor is grounded through the first metal layer and the substrate.
In some embodiments, the capacitor includes a MIM capacitor, a MOM capacitor, or a Trench capacitor, and is not limited thereto.
The embodiment of the invention also provides a radio frequency power amplifier which comprises the radio frequency power chip tube core structure.
Compared with the prior art, in the radio frequency power chip tube core structure with matching, the internal area of the chip and the cost of a chip can be saved by processing the active chip and the matching capacitor together, meanwhile, the loop of the matching capacitor is directly connected with the active chip metal, the substrate loss of the matching structure is reduced, further, the matching capacitor is arranged at one end where the grid is located, a trunk-L structure can be formed by a bonding wire and the capacitor, the impedance of the chip is improved, meanwhile, the output end has no matching capacitor, the coupling of the bonding wire of the output end can be reduced, and further the output parasitic is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic cross-sectional view of a conventional RF power chip die structure;
FIG. 2 is a resonant circuit diagram of a radio frequency power chip die structure;
fig. 3 is a cross-sectional view of a die structure of a radio frequency power chip with matching according to embodiment 1 of the present invention;
FIG. 4 is a top view of the RF power chip die structure shown in FIG. 3;
FIG. 5 is a top view of a die structure of a RF power chip with matching according to a second embodiment of the present invention;
FIG. 6 is a top view of a die structure of a RF power chip with matching according to a third embodiment of the present invention;
fig. 7 is a top view of a die structure of a radio frequency power chip with matching according to a fourth embodiment of the present invention.
Description of reference numerals: 10. a metal via; 11. a substrate; 12. a capacitor upper plate; 13. a capacitor lower plate; 14. a lower metal layer; 15. a drain pad; 16. a grid pad; 17. routing pad; 18. a second metal layer; 19. bonding lines; 20. a metal via; 21. a substrate; 22. a capacitor upper plate; 23. a capacitor lower plate; 24. a lower metal layer; 25. a drain pad; 26. a grid pad; 27. a second metal layer; 28. bonding lines; 29. a metal Via structure (Via); 31. an active region; 32. a capacitor upper plate; 34. a second metal layer; 35. a drain pad; 36. a grid pad; 37. a second metal layer; 41. an active region; 42. a grid pad; 44. a second metal layer; 45. a drain pad; 46. a capacitor upper plate; 47. a second metal layer; 51. an active region; 52. a capacitor upper plate; 54. a second metal layer; 55. a drain pad; 56. a grid pad; 57. a second metal layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
Also, in the description of the present invention, the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The radio frequency power chip die structure with matching provided by the first embodiment of the invention comprises a capacitor matched with a radio frequency power chip (hereinafter referred to as a "chip"), and the capacitor and the radio frequency power chip can be matched to form a resonant circuit shown in fig. 2.
The chip may employ a radio frequency power chip, well known to those skilled in the art, which may include a substrate, a source, a drain, a gate, etc. And active regions and the like may also be formed in the substrate.
Further, referring to fig. 3, a first metal layer 24 is formed on the substrate 21 of the chip, the capacitor lower plate 23 is electrically connected to the first metal layer 24 through a metal Via, the first metal layer 24 is connected to the substrate through a metal Via structure (Via)29 and grounded, the capacitor upper plate 22 is disposed adjacent to the gate pad26, the capacitor upper plate 22 is connected to the drain pad25 through a bonding wire 28, the drain pad25 is electrically connected to the second metal layer 27 through a metal Via structure, and the second metal layer 27 is also disposed on the substrate 21.
Dielectric layers can be arranged between the lower electrode plate of the capacitor and the first metal layer, between the substrate and the first metal layer, between the first metal layer and the second metal layer, and between the drain electrode and the second metal layer. The material of the dielectric layer may be well known to those skilled in the art, and may be, for example, silicon oxide, aluminum nitride, silicon nitride, etc., without being limited thereto.
The metal via structures may be formed in these dielectric layers, and the processing methods thereof and the like are well known to those skilled in the art.
In the radio frequency power chip die structure of the embodiment, the active die and the matching capacitor are processed together, so that the internal area of the chip and the cost of the chip can be saved, and meanwhile, the loop of the matching capacitor is directly connected with the active die through metal, so that the substrate loss of the matching structure can be effectively reduced.
Further, referring to fig. 4, in the rf power chip die structure of the embodiment, the capacitor upper plate 22 and the gate pad26 are disposed on the same side of the second metal layer 27, the drain pad25 is disposed on the other side of the second metal layer away from the gate pad26 or the capacitor upper plate 22, and the capacitor upper plate 22 is disposed between the second metal layer 27 and the gate pad 26. Through the arrangement mode, the matching capacitor is placed at one end of the input end (the end where the grid is located) of the chip, a Shunt-L structure can be formed by the bonding line and the capacitor, the impedance of the chip is improved, the occupied position of the active tube core is effectively utilized, meanwhile, the output end (the end where the drain electrode is located) is led out as short as possible due to the fact that the matching capacitor is not arranged, and therefore the coupling of the bonding line of the output end can be effectively reduced.
In this embodiment, the capacitor may be an MIM capacitor, an MOM capacitor, a Trench capacitor, or the like, but is not limited thereto.
The second embodiment of the present invention provides a die structure of a radio frequency power chip, which is substantially the same as the first embodiment, and the difference is that: referring to fig. 5, a first metal layer 34, a second metal layer 37, a gate pad 36, a drain pad35, a capacitor, etc. are disposed on the active region 31 of the chip, and the gate 36 is disposed between the capacitor top plate 32 and the second metal layer 37.
The die structure of the rf power chip provided in the third embodiment of the present invention may have a basic structure similar to that of the first embodiment, except that: referring to fig. 6, a first metal layer 44, a second metal layer 47, a drain Pad45, and a plurality of capacitors and a gate Pad42 are disposed on an active region 4 of a chip, and capacitor upper plates 46 are disposed on left and right sides of the second metal layer 47, wherein the capacitor upper plates 46 are electrically connected to the drain Pad45 through bonding lines, and the bonding lines connecting the capacitor upper plates 46 to the drain Pad45 are located on two sides of the drain Pad 45.
The rf power chip die structure provided by the fourth embodiment of the present invention may have a basic structure similar to that of the first embodiment, except that: referring to fig. 7, the active region 51 of the chip is provided with a plurality of second metal layers 57 and a plurality of capacitors, and further provided with a first metal layer 54, a drain Pad55 and a gate Pad52, the plurality of capacitor upper plates 56 and the plurality of second metal layers 27 are arranged at intervals, wherein the capacitor upper plates 56 are electrically connected to the drain Pad55 through bonding wires.
Compared with the first and second embodiments of the present invention, the third and fourth embodiments of the present invention can effectively reduce the coupling between the gate and the drain.
Furthermore, it should be noted that in the present specification, "include" or any other variation thereof is intended to cover a non-exclusive inclusion, so that a process, a method, an article or an apparatus including a series of elements includes not only those elements but also other elements not explicitly listed, or further includes elements inherent to such process, method, article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should take the description as a whole, and the technical solutions in the embodiments may be appropriately combined to form other embodiments understood by those skilled in the art.
Claims (11)
1. A radio frequency power chip tube core structure with matching, including the electric capacity that matches with the radio frequency power chip, characterized by: a first polar plate of the capacitor is electrically connected with a source electrode of the chip through a conductor, and a second polar plate is directly and electrically connected with a drain electrode of the chip through a bonding wire, so that a resonant circuit is formed; the source, gate and drain of the chip and the conductor are all disposed on the substrate of the chip.
2. The radio frequency power chip die structure with matching of claim 1, wherein: the source electrode is arranged on a first metal layer on the substrate, a second metal layer is further arranged on the substrate, a first pole plate of the capacitor is electrically connected with the first metal layer through a conductor, the drain electrode is electrically connected with the second metal layer through a conductor, and the first metal layer is electrically connected with the substrate through a conductor.
3. The radio frequency power chip die structure with matching of claim 2, wherein: the conductor comprises a metal via structure; and/or a dielectric layer is further arranged between the first polar plate of the capacitor and the first metal layer and/or between the substrate and the first metal layer and/or between the first metal layer and the second metal layer and/or between the drain electrode and the second metal layer.
4. The radio frequency power chip die structure with matching of claim 2, wherein: the capacitor and the grid electrode are arranged on the same side of the second metal layer, the drain electrode is arranged on the second metal layer and far away from the grid electrode or the other side of the capacitor, and the capacitor is arranged between the second metal layer and the grid electrode or the grid electrode is arranged between the capacitor and the second metal layer.
5. The radio frequency power chip die structure with matching of claim 1, wherein: either one of the capacitor and the gate is disposed on an upper side of the second metal layer, and the drain is disposed on the second metal layer at a lower side remote from either one of the capacitor and the gate, the other one of the capacitor and the gate being disposed around the second metal layer and adjacent to either one of the capacitor and the gate.
6. The matched RF power chip die structure of claim 5, wherein: the capacitors and/or the grids are multiple, wherein two capacitors or two grids are distributed on the left side and the right side of a second metal layer.
7. The matched rf power chip die structure of claim 6, wherein: bonding lines for connecting the first polar plate of the capacitor with the drain electrode are distributed on the left side and the right side of the second metal layer.
8. The matched RF power chip die structure of claim 5, wherein: the second metal layers are arranged at intervals, and at least one grid or at least one capacitor is distributed on the left side and the right side of each second metal layer.
9. The radio frequency power chip die structure with matching of claim 1, wherein: the first plate of the capacitor is grounded through the first metal layer and the substrate.
10. The radio frequency power chip die structure with matching of claim 1, wherein: the capacitor comprises an MIM capacitor, an MOM capacitor or a Trench capacitor.
11. A radio frequency power amplifier comprising the radio frequency power chip die structure of any one of claims 1-10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911250786.1A CN110797338A (en) | 2019-12-09 | 2019-12-09 | Radio frequency power chip tube core structure with matching and radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911250786.1A CN110797338A (en) | 2019-12-09 | 2019-12-09 | Radio frequency power chip tube core structure with matching and radio frequency power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110797338A true CN110797338A (en) | 2020-02-14 |
Family
ID=69447891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911250786.1A Pending CN110797338A (en) | 2019-12-09 | 2019-12-09 | Radio frequency power chip tube core structure with matching and radio frequency power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110797338A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114122134A (en) * | 2020-09-01 | 2022-03-01 | 苏州华太电子技术有限公司 | Radio frequency LDMOS integrated device |
| CN115882790A (en) * | 2023-02-10 | 2023-03-31 | 成都明夷电子科技有限公司 | Amplifier chip output circuit, power supply method, chip and electronic equipment |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10150189A (en) * | 1996-11-18 | 1998-06-02 | Matsushita Electron Corp | Transistor and power amplifier using it |
| JP2011030110A (en) * | 2009-07-28 | 2011-02-10 | Panasonic Corp | Semiconductor device, high frequency switch and high frequency module using the same |
| CN102136497A (en) * | 2009-12-28 | 2011-07-27 | 意法半导体股份有限公司 | Power MOSFET device and method of making the same |
| CN102280439A (en) * | 2011-05-13 | 2011-12-14 | 中国电子科技集团公司第十三研究所 | Internally matching network for microwave power transistor and manufacturing method of internally matching network |
| CN103296034A (en) * | 2013-05-28 | 2013-09-11 | 京东方科技集团股份有限公司 | Array substrate, production method thereof and display device |
| CN104659113A (en) * | 2013-11-20 | 2015-05-27 | 上海华虹宏力半导体制造有限公司 | Internal matching capacitor of RFLDMOS device and manufacturing method of internal matching capacitor |
| CN105141262A (en) * | 2015-07-21 | 2015-12-09 | 苏州能讯高能半导体有限公司 | Amplification module suitable for class F or inverse class F power amplifier |
| US20180233421A1 (en) * | 2017-02-15 | 2018-08-16 | Infineon Technologies Ag | Semiconductor Package, Assembly and Module Arrangements for Measuring Gate-to-Emitter/Source Voltage |
| CN109804558A (en) * | 2016-08-09 | 2019-05-24 | 高通股份有限公司 | The system and method for the match circuit of bypass spurious impedance are provided |
| US20190181106A1 (en) * | 2017-12-12 | 2019-06-13 | Ampleon Netherlands B.V. | Packaged RF Power Amplifier |
| US20200194366A1 (en) * | 2017-06-12 | 2020-06-18 | Vanchip (Tianjin) Technology Co., Ltd. | Radio frequency transistor for improving radio frequency switch performance, chip and mobile terminal |
-
2019
- 2019-12-09 CN CN201911250786.1A patent/CN110797338A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10150189A (en) * | 1996-11-18 | 1998-06-02 | Matsushita Electron Corp | Transistor and power amplifier using it |
| JP2011030110A (en) * | 2009-07-28 | 2011-02-10 | Panasonic Corp | Semiconductor device, high frequency switch and high frequency module using the same |
| CN102136497A (en) * | 2009-12-28 | 2011-07-27 | 意法半导体股份有限公司 | Power MOSFET device and method of making the same |
| CN102280439A (en) * | 2011-05-13 | 2011-12-14 | 中国电子科技集团公司第十三研究所 | Internally matching network for microwave power transistor and manufacturing method of internally matching network |
| CN103296034A (en) * | 2013-05-28 | 2013-09-11 | 京东方科技集团股份有限公司 | Array substrate, production method thereof and display device |
| CN104659113A (en) * | 2013-11-20 | 2015-05-27 | 上海华虹宏力半导体制造有限公司 | Internal matching capacitor of RFLDMOS device and manufacturing method of internal matching capacitor |
| CN105141262A (en) * | 2015-07-21 | 2015-12-09 | 苏州能讯高能半导体有限公司 | Amplification module suitable for class F or inverse class F power amplifier |
| CN109804558A (en) * | 2016-08-09 | 2019-05-24 | 高通股份有限公司 | The system and method for the match circuit of bypass spurious impedance are provided |
| US20180233421A1 (en) * | 2017-02-15 | 2018-08-16 | Infineon Technologies Ag | Semiconductor Package, Assembly and Module Arrangements for Measuring Gate-to-Emitter/Source Voltage |
| US20200194366A1 (en) * | 2017-06-12 | 2020-06-18 | Vanchip (Tianjin) Technology Co., Ltd. | Radio frequency transistor for improving radio frequency switch performance, chip and mobile terminal |
| US20190181106A1 (en) * | 2017-12-12 | 2019-06-13 | Ampleon Netherlands B.V. | Packaged RF Power Amplifier |
Non-Patent Citations (1)
| Title |
|---|
| 蔡世俊: "《集成电路计算机辅助设计》（电子书籍）", 南京大学出版社, pages: 85 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114122134A (en) * | 2020-09-01 | 2022-03-01 | 苏州华太电子技术有限公司 | Radio frequency LDMOS integrated device |
| CN114122134B (en) * | 2020-09-01 | 2023-12-22 | 苏州华太电子技术股份有限公司 | Radio frequency LDMOS integrated device |
| CN115882790A (en) * | 2023-02-10 | 2023-03-31 | 成都明夷电子科技有限公司 | Amplifier chip output circuit, power supply method, chip and electronic equipment |
| CN115882790B (en) * | 2023-02-10 | 2023-05-23 | 成都明夷电子科技有限公司 | Amplifier chip output circuit, power supply method, chip and electronic equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20180269158A1 (en) | Semiconductor packages having wire bond wall to reduce coupling | |
| CN1976023B (en) | Output match transistor | |
| EP1573813B1 (en) | Rf power transistor with internal bias feed | |
| US8334580B2 (en) | Semiconductor chip comprising a directional coupler having a specific main line and sub-line arrangement | |
| US7851832B2 (en) | Semiconductor device | |
| EP1145314B1 (en) | High frequency power transistor device | |
| US11245386B2 (en) | High-frequency module | |
| EP1058312A2 (en) | Radio frequency power device | |
| CN107644852B (en) | Integrated passive device for RF power amplifier package | |
| JP2005516515A (en) | Output circuit for semiconductor amplifier elements | |
| EP2393111B1 (en) | Inductive bond-wire circuit | |
| TWI505542B (en) | Transmission line, impedance transformer, integrated circuit mounted device, and communication device module | |
| US6614311B2 (en) | Micro-wave power amplifier | |
| JP2010087934A (en) | Matching circuit, high-frequency power amplifier and cellular phone | |
| JP6337473B2 (en) | Integrated circuit and transmitter / receiver | |
| US4393392A (en) | Hybrid transistor | |
| CN105141262B (en) | A kind of amplification module suitable for F classes or against F power-like amplifiers | |
| US9503030B2 (en) | Radio frequency power amplifier | |
| CN110797338A (en) | Radio frequency power chip tube core structure with matching and radio frequency power amplifier | |
| US20150294930A1 (en) | RF Power Transistor | |
| CN106208989B (en) | A kind of radio-frequency power amplifier domain and radio-frequency power amplifier | |
| CN217693258U (en) | Push-pull power amplifying circuit and radio frequency front end module | |
| CN106253873B (en) | A kind of thin film bulk acoustic wave resonator harmonic tuning amplification module | |
| CN113782673A (en) | Planar spiral inductor and corresponding broadband radio frequency power amplifier internal matching circuit | |
| CN105322892B (en) | One kind being based on thin film bulk acoustic wave resonator harmonic tuning amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 215000 10-1f, creative industry park, 328 Xinghu street, Suzhou Industrial Park, Jiangsu Province Applicant after: Suzhou Huatai Electronic Technology Co.,Ltd. Address before: Room b0604, 388 Ruoshui Road, Suzhou Industrial Park, 215000 Applicant before: SUZHOU HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd. |