CN115882790B - Amplifier chip output circuit, power supply method, chip and electronic equipment - Google Patents
Amplifier chip output circuit, power supply method, chip and electronic equipment Download PDFInfo
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Abstract
The invention relates to the field of chip layout, in particular to an amplifier chip output circuit, a power supply method, a chip and electronic equipment; the impedance transformation and the power synthesis are realized by arranging an output matching circuit on the first metal layer; an output power supply circuit is arranged on the second metal layer of the amplifier chip, the input end of the choke coil is coupled with a power supply, and the output end of the choke coil is coupled with the collector electrode of the final amplifier and is used for supplying power to the final tube core of the amplifier chip; the current capacity of the power supply choke coil is greatly improved, and the condition that the power supply choke coil is burnt out under the working condition of a large signal and the test of a power resistance experiment is avoided; meanwhile, the area of the power amplifier chip can be effectively reduced, and the utilization rate of the chip area is improved.
Description
Technical Field
The present invention relates to the field of chip layout, and in particular, to an amplifier chip output circuit, a power supply method, a chip, and an electronic device.
Background
Currently, on radio frequency power amplifier chips, lumped devices are commonly used as Choke coils (RF chokes) for the output supply of radio frequency amplifying transistors. Due to the change of market demands, nowadays, more and more products need designs of transferring the choke coil outside the chip to the chip, and the choke coil is usually used as a part of circuit output matching, and a function of supplying power to the final chip is achieved by using wire bonding (wire bonding).
The equivalent inductance per millimeter of a 1mil diameter wire is about 0.8nH, making it difficult to achieve a large inductance in a limited chip package area. At this time, the on-chip wire bonding wire can be regarded as a part of the output matching circuit, but the wire needs to have the function of supplying power to the die at the same time, so that the capacitance cannot be used for carrying out impedance transformation between the wire and the emitter of the radio frequency amplifying transistor, and for a power amplifier product with lower operating frequency and relatively large bandwidth, the die output directly adopts a mode of carrying out impedance transformation on the ground inductance (radio frequency short circuit), so that the requirement of broadband is difficult to realize. The use of on-chip wire-wound inductors wastes more chip area, and increases the product cost.
Disclosure of Invention
Aiming at the problems that the insertion loss is large and the choke coil cannot be realized when the on-chip wire bonding is adopted as the choke coil for power supply, the invention provides an amplifier chip output circuit, a power supply method, a chip and electronic equipment, wherein the output power supply circuit is arranged on a second metal layer of the amplifier chip; coupling the input end of the choke coil with a power supply, and coupling the output end of the choke coil with the collector electrode of the final amplifier for supplying power to the final stage of the amplifier chip; an output matching circuit is arranged on the first metal layer, so that impedance transformation and power synthesis are realized, the current passing capacity of the power supply choke coil is greatly improved, and the condition that the power supply choke coil is burnt out in a large-signal working condition and a power resistance experiment test is avoided; meanwhile, the area of the power amplifier chip can be effectively reduced, and the utilization rate of the chip area is improved.
The invention has the following specific implementation contents:
an amplifier chip output circuit coupled to an output of a final stage amplifier of an amplifier chip, the amplifier chip comprising a substrate, a first metal layer and a second metal layer; the amplifier chip output circuit comprises an output power supply circuit and an output matching circuit; the output power supply circuit comprises a choke coil, wherein the input end of the choke coil is coupled with a power supply, and the output end of the choke coil is coupled with the collector electrode of the final amplifier;
the choke coil is arranged on the second metal layer and is used for supplying power to a final amplifier of the amplifier chip;
the output matching circuit is arranged on the first metal layer and is used for realizing impedance transformation and power synthesis.
In order to better realize the invention, the output matching circuit further comprises a first capacitor, a second capacitor and a microstrip line; the input end of the first capacitor is coupled with the output end of the final amplifier and the output end of the choke coil; the output end of the first capacitor is coupled with the input end of the second capacitor through a microstrip line;
the upper substrate of the first capacitor is arranged on the second metal layer, and the lower substrate is arranged on the first metal layer;
the upper substrate of the second capacitor is arranged on the second metal layer, and the lower substrate is arranged on the first metal layer and used for isolating direct current and direct voltage;
the microstrip line is arranged on the first metal layer and the second metal layer, and the upper substrate of the first capacitor is connected with the upper substrate of the second capacitor, and the lower substrate of the first capacitor is connected with the lower substrate of the second capacitor to realize impedance transformation.
In order to better realize the invention, the device further comprises a first bonding pad; the first bonding pad comprises a first bonding pad metal layer A and a first bonding pad metal layer B, wherein the first bonding pad metal layer A is arranged on the first metal layer, and the first bonding pad metal layer B is arranged on the second metal layer;
the choke coil is coupled to the first pad metal layer B by wire bonding.
In order to better realize the invention, the semiconductor device further comprises a second bonding pad; the second bonding pad comprises a second bonding pad metal layer A and a second bonding pad metal layer B, the second bonding pad metal layer A is arranged on the first metal layer, and the second bonding pad metal layer B is arranged on the second metal layer;
the output end of the second capacitor is coupled with the second bonding pad metal layer A through a wire bonding metal wire.
In order to better realize the invention, the invention further comprises a through hole;
the through holes are distributed between the first metal layer and the second metal layer, and conductor metal is arranged in the through holes and used for conducting the first metal layer and the second metal layer, the first metal layer and the first pad metal layer B of the first pad and the first metal layer and the second pad metal layer B of the second pad.
In order to better realize the invention, the thickness of the second metal layer is larger than that of the first metal layer, and a dielectric layer is arranged between the first metal layer and the second metal layer.
Based on the amplifier chip output circuit, in order to better realize the invention, further, an amplifier chip output power supply method is provided, wherein the amplifier chip comprises a substrate, a first metal layer and a second metal layer; an output power supply circuit is arranged on the second metal layer of the amplifier chip; the output power supply circuit comprises a choke coil; coupling an input end of the choke coil with a power supply, and coupling an output end of the choke coil with a collector electrode of a final amplifier of the amplifier chip for supplying power to the final amplifier of the amplifier chip;
and arranging an output matching circuit on the first metal layer for realizing impedance transformation and power synthesis.
In order to better realize the invention, the output matching circuit further comprises a first capacitor, a second capacitor and a microstrip line; coupling an input of a first capacitor with an output of a final amplifier; coupling the output end of the first capacitor with the input end of the second capacitor through a microstrip line;
the upper substrate of the first capacitor is arranged on the second metal layer, and the lower substrate is arranged on the first metal layer and used for output matching and power synthesis;
the upper substrate of the second capacitor is arranged on the second metal layer, and the lower substrate is arranged on the first metal layer and used for isolating direct current and direct voltage;
the microstrip line is arranged on the first metal layer and the second metal layer, and the upper substrate of the first capacitor is coupled with the upper substrate of the second capacitor, and the lower substrate of the first capacitor is coupled with the lower substrate of the second capacitor to realize impedance transformation.
In order to better realize the invention, further, a first bonding pad is arranged on the output circuit, the first bonding pad comprises a first bonding pad metal layer A and a first bonding pad metal layer B, the first bonding pad metal layer A is arranged on the first metal layer, and the first bonding pad metal layer B is arranged on the second metal layer; the choke coil is coupled to the first pad metal layer B by wire bonding.
In order to better realize the invention, further, a second bonding pad is arranged on the output circuit; the second bonding pad comprises a second bonding pad metal layer A and a second bonding pad metal layer B, the second bonding pad metal layer A is arranged on the first metal layer, and the second bonding pad metal layer B is arranged on the second metal layer; the output end of the second capacitor is coupled with the second bonding pad metal layer A through a wire bonding metal wire.
In order to better realize the invention, further, through holes are also arranged on the output circuit of the amplifier chip;
the through holes are distributed between the first metal layer and the second metal layer, and conductor metal is arranged in the through holes and used for conducting the first metal layer and the second metal layer, the first metal layer and the first pad metal layer B of the first pad and the first metal layer and the second pad metal layer B of the second pad.
In order to better realize the invention, further, the thickness of the second metal layer is larger than that of the first metal layer, and an insulating medium layer is arranged between the first metal layer and the second metal layer.
Based on the amplifier chip output circuit, in order to better realize the invention, a chip is further provided, which comprises the amplifier chip output circuit; the amplifier chip output circuit is integrated on the chip; the amplifier chip output circuit is used for supplying power to the chip final amplifier.
Based on the amplifier chip output circuit, in order to better implement the present invention, an electronic device is further provided, which includes the chip for amplifying a signal.
According to the invention, the power supply choke coil is arranged on the signal wiring of the output power supply circuit of the final-stage tube core of the amplifier, so that the current capacity of the power supply choke coil is greatly improved, and the condition that the power supply choke coil is burnt out under the working condition of a large signal and in the test of a power resistance experiment is avoided; meanwhile, the area of the power amplifier chip can be effectively reduced, and the utilization rate of the chip area is improved.
Drawings
FIG. 1 is a schematic diagram of an amplifier output circuit;
fig. 2 is a schematic diagram of a final output layout of a chip.
Detailed Description
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it should be understood that the described embodiments are only some embodiments of the present invention, but not all embodiments, and therefore should not be considered as limiting the scope of protection. All other embodiments, which are obtained by a worker of ordinary skill in the art without creative efforts, are within the protection scope of the present invention based on the embodiments of the present invention.
In the description of the present invention, it should be noted that, unless explicitly stated and limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; or may be directly connected, or may be indirectly connected through an intermediate medium, or may be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Currently, on radio frequency power amplifier chips of the III-V semiconductor compound process, lumped devices are commonly used as Choke coils (RF chokes) for the output power supply of radio frequency amplifying transistors. Due to the change of market demands, nowadays, more and more products need designs of transferring the choke coil outside the chip to the chip, and the choke coil is usually used as a part of circuit output matching, and a function of supplying power to the final chip is achieved by using wire bonding (wire bonding).
The equivalent inductance per millimeter of a 1mil diameter wire is about 0.8. 0.8nH, which makes it difficult to achieve a large inductance in a limited chip package area. At this time, we can consider the on-chip wire bonding wire as a part of the output matching circuit, but at the same time, the wire needs to have the function of supplying power to the die, so that the capacitance cannot be used for performing impedance transformation between the wire and the emitter of the radio frequency amplifying transistor, and for the power amplifier product with lower operating frequency and larger relative bandwidth, the die output directly adopts the mode of performing impedance transformation on the ground inductance (radio frequency short circuit), so that the requirement of broadband is difficult to realize. The use of on-chip wire-wound inductors wastes more chip area, and increases the product cost.
Fig. 1 is a schematic diagram of an output circuit of a power amplifier chip, where an inductance L may be equivalently used as a choke coil for supplying power to a collector (or drain) of a final power amplifier, so that an inductance value of the inductance L is required to be larger, so that an input impedance of a radio frequency signal is larger (almost open circuit) and power leakage is not easy to occur, and a capacitance C is used as an on-chip/off-chip decoupling capacitor, and may be used to ground and short-circuit a low frequency signal, so that the power amplifier system is not affected by the low frequency signal.
Generally, a lumped device with a larger inductance value is used to realize the function of the inductance L, but this method is only suitable for supplying power outside the chip and cannot be used in an integrated circuit. The on-chip gold wire is also a common power supply means for the power amplifier chip, and the method can be realized in an integrated circuit, but is difficult to realize a larger inductance value as large as that of a lumped device, so that the on-chip gold wire has smaller input impedance for radio frequency signals, so that the Insertion loss (Insertion loss) of the on-chip gold wire is larger, the output power is easy to leak, and the choke coil cannot be realized.
The on-chip metal winding inductor is used as the choke coil, and although the inductance required by design can be met, the consumed direct current power is larger because the output power of the final-stage tube core of the power amplifier is larger, the current capacity of the power supply choke coil also needs to be considered by a designer, and if the width of the metal winding inductor is too narrow, the current capacity of the inductor is insufficient, and the phenomenon that the power supply coil burns out under the high-power working condition is very likely to occur. If a wider metal winding inductance is adopted, a large amount of chip area is required, which is unfavorable for reducing the cost of the product.
Example 1:
the embodiment provides an amplifier chip output circuit which is coupled with the output end of a final amplifier die of an amplifier chip, wherein the amplifier chip comprises a substrate, a first metal layer and a second metal layer; the amplifier chip output circuit comprises an output power supply circuit and an output matching circuit; the output power supply circuit comprises a choke coil, wherein the input end of the choke coil is coupled with a power supply, and the output end of the choke coil is coupled with the collector electrode of the final amplifier;
the choke coil is arranged on the second metal layer and is used for supplying power to the final amplifier of the amplifier chip;
the output matching circuit is arranged on the first metal layer and is used for realizing impedance transformation and power synthesis.
Working principle: in the embodiment, the power supply choke coil is arranged on the signal wiring of the die output power supply circuit of the final amplifier of the amplifier, the power supply choke coil is arranged on the second metal layer, and the output matching circuit is arranged on the first metal layer, so that the current capacity of the power supply choke coil is greatly improved, and the condition that the power supply choke coil is burnt out under the conditions of large signal working condition and power resistance experiment test is avoided; meanwhile, the area of the power amplifier chip can be effectively reduced, and the utilization rate of the chip area is improved.
Example 2:
on the basis of the above embodiment 1, as shown in fig. 1 and 2, the output matching circuit includes a first capacitor, a second capacitor, and a microstrip line; the input end of the first capacitor is coupled with the output end of the final amplifier and the output end of the choke coil; the output end of the first capacitor is coupled with the input end of the second capacitor through a microstrip line;
the upper substrate of the first capacitor is arranged on the second metal layer, and the lower substrate is arranged on the first metal layer;
the upper substrate of the second capacitor is arranged on the second metal layer, and the lower substrate is arranged on the first metal layer and used for isolating direct current and direct voltage;
the microstrip line is arranged on the first metal layer and the second metal layer, and the upper substrate of the first capacitor is connected with the upper substrate of the second capacitor, and the lower substrate of the first capacitor is connected with the lower substrate of the second capacitor to realize impedance transformation.
Other portions of this embodiment are the same as those of embodiment 1 described above, and thus will not be described again.
Example 3:
this embodiment further includes a first pad, as shown in fig. 2, on the basis of any one of the above embodiments 1 to 2; the first bonding pad comprises a first bonding pad metal layer A and a first bonding pad metal layer B, wherein the first bonding pad metal layer A is arranged on the first metal layer, and the first bonding pad metal layer B is arranged on the second metal layer;
the choke coil is coupled to the first pad metal layer B by wire bonding.
Further, the semiconductor device further comprises a second bonding pad; the second bonding pad comprises a second bonding pad metal layer A and a second bonding pad metal layer B, the second bonding pad metal layer A is arranged on the first metal layer, and the second bonding pad metal layer B is arranged on the second metal layer;
the output end of the second capacitor is coupled with the second bonding pad metal layer A through a wire bonding metal wire.
Further, the device also comprises a through hole;
the through holes are distributed between the first metal layer and the second metal layer, and conductor metal is arranged in the through holes and used for conducting the first metal layer and the second metal layer, the first metal layer and the first pad metal layer B of the first pad and the first metal layer and the second pad metal layer B of the second pad.
The thickness of the second metal layer is larger than that of the first metal layer, and a dielectric layer is arranged between the first metal layer and the second metal layer.
Other portions of this embodiment are the same as any of embodiments 1 to 2, and thus will not be described again.
Example 4:
the present embodiment proposes an output power supply method of an amplifier chip including a substrate, a first metal layer, and a second metal layer, on the basis of any one of the above embodiments 1 to 3; comprising the following operations:
operation one: an output power supply circuit is arranged on the second metal layer of the amplifier chip; the output power supply circuit comprises a choke coil, wherein the input end of the choke coil is coupled with a power supply, and the output end of the choke coil is coupled with the collector electrode of the final amplifier and is used for supplying power to the final tube core of the amplifier chip;
and (2) operation II: and arranging an output matching circuit on the first metal layer for realizing impedance transformation and power synthesis.
As shown in fig. 1 and 2, the output matching circuit includes a first capacitor, a second capacitor and a microstrip line; coupling an input of a first capacitor with an output of a final amplifier; coupling the output end of the first capacitor with the input end of the second capacitor through a microstrip line;
the upper substrate of the first capacitor is arranged on the second metal layer, and the lower substrate is arranged on the first metal layer and used for output matching and power synthesis;
the upper substrate of the second capacitor is arranged on the second metal layer, and the lower substrate is arranged on the first metal layer and used for isolating direct current and direct voltage;
the microstrip line is arranged on the first metal layer and the second metal layer, and the upper substrate of the first capacitor is coupled with the upper substrate of the second capacitor, and the lower substrate of the first capacitor is coupled with the lower substrate of the second capacitor to realize impedance transformation.
Further, a first bonding pad is arranged on the output circuit, the first bonding pad comprises a first bonding pad metal layer A and a first bonding pad metal layer B, the first bonding pad metal layer A is arranged on the first metal layer, and the first bonding pad metal layer B is arranged on the second metal layer; the choke coil is coupled to the first pad metal layer B by wire bonding.
Further, a second bonding pad is arranged on the output circuit; the second bonding pad comprises a second bonding pad metal layer A and a second bonding pad metal layer B, the second bonding pad metal layer A is arranged on the first metal layer, and the second bonding pad metal layer B is arranged on the second metal layer; the output end of the second capacitor is coupled with the second bonding pad metal layer A through a wire bonding metal wire.
Further, a through hole is also arranged on the output circuit of the amplifier chip;
the through holes are distributed between the first metal layer and the second metal layer, and conductor metal is arranged in the through holes and used for conducting the first metal layer and the second metal layer, the first metal layer and the first pad metal layer B of the first pad and the first metal layer and the second pad metal layer B of the second pad.
Further, the thickness of the second metal layer is larger than that of the first metal layer, and an insulating medium layer is arranged between the first metal layer and the second metal layer.
Other portions of this embodiment are the same as any of embodiments 1 to 3, and thus will not be described again.
Example 5:
in this example, as shown in fig. 2, an amplifier chip of a group iii-v compound process is described in detail on the basis of any one of the above examples 1 to 4.
As shown in fig. 2, the left side is connected to the output terminal of the final transistor, the bottom metal of the iii-v semiconductor compound process except the substrate is metal one (MET 1), the penultimate metal on the chip except the substrate is metal two (MET 2), and an insulating medium is arranged between the metal one and the metal two, and the metal two are not conductive, so that the metal two can be connected with each other through a Via (Via). The first capacitor C1 and a microstrip line with a metal-one layout are used as output matching and power synthesizing circuits; the second capacitor C2 is an on-chip blocking capacitor (DC Block) and plays a role in isolating direct current and voltage; the second PAD2 is a signal output terminal of the chip.
The microstrip line is a part of an output matching circuit, and the required characteristic impedance, namely the metal line width and the required phase length during layout, namely the metal line length during layout are selected according to the difference of matching networks.
Aiming at the common manufacturing process of the III-V semiconductor compound technology, the thickness of the second metal is thicker than that of the first metal, so that the through-flow capacity of the second metal is stronger than that of the first metal under the condition of the same metal line width; under the high-power working condition, according to the formula 1, the larger the output power P is, the unchanged the load resistance R is, and the larger the current I is. The Choke coil can bear larger dynamic current, so that the invention adopts a metal two as the Choke coil for power supply by the output of the tube core, namely, the radio frequency Choke coil (RF Choke) of the embodiment in the dashed line frame in fig. 2 adopts an up-down symmetrical layout form, and compared with a single Choke coil, the current capacity of the Choke coil is improved by two times, and the quality factor Q value of the coil is improved; meanwhile, the symmetrical layout form can avoid the influence on the chip performance (such as output power, linearity and the like) caused by inconsistent signal phases during power synthesis. Meanwhile, the choke coil can be drawn according to the requirement, the equivalent inductance of the choke coil can be adjusted, and the choke coil can also be used as a part of an output matching circuit from radio frequency to low inductance.
The first metal is the lower metal, the second metal is the upper metal, and the microstrip line and the winding inductor can be independently distributed. The conductor metal can be arranged in the through hole to connect the first metal and the second metal up and down and conduct each other, and as a whole, the double-layer metal is used for laying out the microstrip line and the winding inductor. The upper substrate of the capacitor is metal two, the lower substrate is metal one, and a medium is arranged in the middle. The bonding pad comprises a second metal and a first metal, and the second metal and the first metal are connected and conducted mutually.
The two choke coils are respectively connected with the first bonding PAD PAD1 and then connected with the decoupling capacitor and the power supply through the form of wire bonding wires, so that the on-chip power supply choke coil with high inductance value is realized. The decoupling capacitor can be outside or inside the chip, and the decoupling capacitor is also connected with the bonding pad, so that the decoupling capacitor can be connected with the bonding pad on the chip by a gold wire bonding method.
Because the first metal and the second metal are not mutually conducted, the power supply choke coil is arranged on the circuit of the output matching network, so that the circuit of the matching network adopts the first metal as far as possible, the area of a chip is greatly saved, the utilization rate of the area of the chip is improved, and the cost of a product is effectively saved.
P=I 2 ×R
wherein P is output power, I is current, R is load resistance;
most of the three-five processes at present only have two layers of metal one and metal two, and few processes have three layers of metal, in the process, the metal three can be used as a choke coil for layout, and the metal one and the metal two can be used as matching circuits for layout.
In the embodiment, the power supply choke coils are symmetrically arranged on the signal wiring output by the final-stage tube core of the power amplifier, so that the current capacity of the power supply choke coils is greatly improved, and the condition that the power supply choke coils are burnt out under the working condition of large signals and in the test of a power resistance experiment is avoided; meanwhile, the area of the power amplifier chip can be effectively reduced, and the utilization rate of the chip area is improved.
Based on the above proposed method, the present embodiment further proposes a chip, including the above output circuit; the output circuit is integrated on the chip; the output circuit is used for supplying power to the final-stage die of the chip.
The embodiment also provides electronic equipment, which comprises the chip, wherein the chip is used for amplifying signals. The chip related to the embodiment can be a radio frequency front end chip, a transceiver chip, a wifi chip, a base station radio frequency chip, a wireless small station chip, a macro station chip, a Bluetooth chip, a wireless communication chip and an Ethernet communication chip;
those of ordinary skill in the art will appreciate that the various illustrative modules and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
It will be clearly understood by those skilled in the art that, for convenience and brevity of description, specific working procedures of the above-described system, apparatus and module may refer to corresponding procedures in the foregoing method embodiments, which are not repeated herein.
In the several embodiments provided in this application, it should be understood that the disclosed systems, devices, and methods may be implemented in other ways. For example, the above-described device embodiments are merely illustrative, e.g., the division of the modules is merely a logical function division, and there may be additional divisions when actually implemented, e.g., multiple modules or components may be combined or integrated into another device, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some interface, indirect coupling or communication connection of devices or modules, electrical, mechanical, or other form.
The modules described as separate components may or may not be physically separate, and components shown as modules may or may not be physically separate, i.e., may be located in one device, or may be distributed over multiple devices. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional module in each embodiment of the present application may be integrated in one device, or each module may exist alone physically, or two or more modules may be integrated in one device.
Other portions of this embodiment are the same as any of embodiments 1 to 4, and thus will not be described again.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (12)
1. An amplifier chip output circuit coupled to an output of a final stage amplifier of the amplifier chip, the amplifier chip comprising a substrate, a first metal layer, and a second metal layer; the amplifier chip output circuit comprises an output power supply circuit and an output matching circuit; the output power supply circuit comprises a choke coil, wherein the input end of the choke coil is coupled with a power supply, and the output end of the choke coil is coupled with the collector electrode of the final amplifier of the amplifier chip;
the choke coil is arranged on the second metal layer and is used for supplying power to a final amplifier of the amplifier chip;
the output matching circuit is arranged on the first metal layer and is used for power synthesis and impedance transformation;
the output matching circuit comprises a first capacitor, a second capacitor and a microstrip line; the input end of the first capacitor is coupled with the output end of the final-stage amplifier and the output end of the choke coil; the output end of the first capacitor is coupled with the input end of the second capacitor through the microstrip line;
the upper substrate of the first capacitor is arranged on the second metal layer, and the lower substrate is arranged on the first metal layer;
the upper substrate of the second capacitor is arranged on the second metal layer, and the lower substrate is arranged on the first metal layer and used for isolating direct current and direct voltage;
the microstrip line is arranged on the first metal layer and the second metal layer, and the upper substrate of the first capacitor is coupled with the upper substrate of the second capacitor, and the lower substrate of the first capacitor is coupled with the lower substrate of the second capacitor to realize impedance transformation.
2. The amplifier chip output circuit of claim 1, further comprising a first pad; the first bonding pad comprises a first bonding pad metal layer A and a first bonding pad metal layer B, wherein the first bonding pad metal layer A is arranged on the first metal layer, and the first bonding pad metal layer B is arranged on the second metal layer;
the choke coil is coupled with the first pad metal layer B through gold wire bonding.
3. The amplifier chip output circuit of claim 2, further comprising a second pad; the second bonding pad comprises a second bonding pad metal layer A and a second bonding pad metal layer B, the second bonding pad metal layer A is arranged on the first metal layer, and the second bonding pad metal layer B is arranged on the second metal layer;
and the output end of the second capacitor is coupled with the second bonding pad metal layer A through a wire bonding metal wire.
4. An amplifier chip output circuit as set out in claim 3, further comprising a via;
the through holes are arranged between the first metal layer and the second metal layer, and conductor metal is arranged in the through holes and used for conducting the first metal layer with the second metal layer, the first bonding pad metal layer A with the first bonding pad metal layer B, the second bonding pad metal layer A with the second bonding pad metal layer B.
5. An amplifier chip output circuit as set out in any of claims 1-4, wherein the thickness of said second metal layer is greater than the thickness of said first metal layer, and wherein an insulating dielectric layer is disposed between said first metal layer and said second metal layer.
6. An amplifier chip output power supply method is characterized in that the amplifier chip comprises a substrate, a first metal layer and a second metal layer; an output circuit is arranged on the amplifier chip, and the output circuit comprises an output power supply circuit and an output matching circuit; the output power supply circuit is arranged on the second metal layer, and the output matching circuit is arranged on the first metal layer;
the output power supply circuit comprises a choke coil; the input end of the choke coil is coupled with a power supply, and the output end of the choke coil is coupled with the collector electrode of the final amplifier of the amplifier chip and is used for supplying power to the final amplifier of the amplifier chip;
the output matching circuit is used for realizing impedance transformation and power synthesis;
the output matching circuit comprises a first capacitor, a second capacitor and a microstrip line; an input of the first capacitor is coupled to an output of the final amplifier; the output end of the first capacitor is coupled with the input end of the second capacitor through the microstrip line;
the upper substrate of the first capacitor is arranged on the second metal layer, and the lower substrate is arranged on the first metal layer and used for output matching and power synthesis;
the upper substrate of the second capacitor is arranged on the second metal layer, and the lower substrate is arranged on the first metal layer and used for isolating direct current and direct voltage;
the microstrip line is arranged on the first metal layer and the second metal layer, and the upper substrate of the first capacitor is coupled with the upper substrate of the second capacitor, and the lower substrate of the first capacitor is coupled with the lower substrate of the second capacitor to realize impedance transformation.
7. The amplifier chip output power supply method of claim 6, wherein a first pad is disposed on the output circuit, the first pad comprising a first pad metal layer a and a first pad metal layer B, the first pad metal layer a being disposed on the first metal layer, the first pad metal layer B being disposed on the second metal layer; and coupling the choke coil with the first pad metal layer B through gold wire bonding.
8. The amplifier chip output power supply method of claim 7, wherein a second pad is disposed on said output circuit; the second bonding pad comprises a second bonding pad metal layer A and a second bonding pad metal layer B, the second bonding pad metal layer A is arranged on the first metal layer, and the second bonding pad metal layer B is arranged on the second metal layer; and the output end of the second capacitor is coupled with the second bonding pad metal layer A through a wire bonding metal wire.
9. The method of supplying power to an amplifier chip output of claim 8, wherein a via is further provided in said output circuit;
the through holes are arranged between the first metal layer and the second metal layer, and conductor metal is arranged in the through holes and used for conducting the first metal layer, the second metal layer, the first bonding pad metal layer A, the first bonding pad metal layer B, the second bonding pad metal layer A and the second bonding pad metal layer B.
10. An amplifier chip output power supply method as set out in any of claims 6-9, wherein said second metal layer has a thickness greater than a thickness of said first metal layer, and wherein an insulating dielectric layer is disposed between said first metal layer and said second metal layer.
11. A chip comprising the amplifier chip output circuit of any one of claims 1-5; the amplifier chip output circuit is integrated on the chip; the amplifier chip output circuit is configured to supply power to the chip final die.
12. An electronic device comprising the chip of claim 11 for amplifying a signal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310091816.9A CN115882790B (en) | 2023-02-10 | 2023-02-10 | Amplifier chip output circuit, power supply method, chip and electronic equipment |
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| CN202310091816.9A CN115882790B (en) | 2023-02-10 | 2023-02-10 | Amplifier chip output circuit, power supply method, chip and electronic equipment |
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| CN115882790B true CN115882790B (en) | 2023-05-23 |
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| CN110797338A (en) * | 2019-12-09 | 2020-02-14 | 苏州华太电子技术有限公司 | Radio frequency power chip tube core structure with matching and radio frequency power amplifier |
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| JP4256575B2 (en) * | 2000-08-15 | 2009-04-22 | パナソニック株式会社 | RF passive circuit and RF amplifier with via hole |
| US8432237B2 (en) * | 2009-05-21 | 2013-04-30 | Qualcomm, Incorporated | Output circuit with integrated impedance matching, power combining and filtering for power amplifiers and other circuits |
| JP6943193B2 (en) * | 2018-01-25 | 2021-09-29 | 日本電信電話株式会社 | Transmission line, matching circuit and amplifier circuit |
| CN111510088A (en) * | 2020-04-23 | 2020-08-07 | 广州慧智微电子有限公司 | Harmonic suppression radio frequency power amplifier |
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| CN110797338A (en) * | 2019-12-09 | 2020-02-14 | 苏州华太电子技术有限公司 | Radio frequency power chip tube core structure with matching and radio frequency power amplifier |
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