US3443311A - Thin film distributed rc network - Google Patents

Thin film distributed rc network Download PDF

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US3443311A
US3443311A US590805A US3443311DA US3443311A US 3443311 A US3443311 A US 3443311A US 590805 A US590805 A US 590805A US 3443311D A US3443311D A US 3443311DA US 3443311 A US3443311 A US 3443311A
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tantalum
film
thin film
low density
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Walter Worobey
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AT&T Corp
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Bell Telephone Laboratories Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016—Thin-film circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base

Definitions

  • This invention relates to thin film structures. More particularly, the present invention relates to a novel thin film distributed RC structure.
  • trim anodization technique is not readily applicable to thin film distributed RC networks (which offer several advantages over the lumped thin film RC network, namely, ease in synthesizing a function by the elimination of components, etc.) in which a film capacitor is superpositioned upon a film resistor due to the fact that the superposed counterelectrode prevents trim anodization of the underlying resistor path.
  • this prior art limitation is effectively obviated by a novel structure comprising a thin film capacitor having a low density tantalum counterelectrode of a desired resistive configuration.
  • the described structure readily lends itself to precise adjustment of the RC product by trim anodization of the low density tantalum layer, so resulting in the desired frequency response.
  • the novel structures described herein are obtained by preparing a thin film capacitor by conventional techniques, the counterelectrode comprising low density tantalum obtained by cathodic sputtering techniques. Thereafter, conventional photolithographic methods are employed to generate the desired resistive configuration.
  • FIG. 1 is a cross-sectional view of a substrate with a layer of a film-forming metal deposited thereon;
  • FIG. 2 is a perspective view of the body of FIG. 1 after the generation therein of a desired pattern
  • FIG. 3 is a cross-sectional view of the body of FIG. 2 after anodization
  • FIG. 4 is a cross-sectional view of the body of FIG. 3 after deposition thereon of a counterelectrode and the generation therein of a desired pattern;
  • FIG. 5 is a cross-sectional view of the body of FIG. 4 after the trim anodization of the top layer thereof;
  • FIG. 6 is a plan view of the body of FIG. 5.
  • FIG. 1 there is shown a substrate upon which a metallic pattern is to be produced in accordance with the present invention.
  • Preferred substrate materials suitable for this purpose are glazed ceramics, glasses and so forth.
  • the first step in fabricating a structure in accordance with the invention involves cleansing the substrate by conventional techniques well known to those skilled in the art. Following the cleansing step, a layer of a film-forming metal 12 is deposited upon a substrate 11 by any conventional procedure as, for example, cathodic sputtering, vacuum evaporation and so forth, as described by L. Holland in Vacuum Deposition of Thin Films, J. Wiley & Sons, 1956.
  • the film-forming metals of interest herein are those whose oxides are known to be excellent dielectric ice materials and include tantalum, aluminum, niobium, titanium zirconium and hafnium.
  • the minimum thickness of the layer deposited upon the substrate is dependent upon two factors. The first of these is the thickness of the metal which is converted into the oxide form during the subsequent anodizing step. The second factor is the minimum thickness of unoxidized metal remaining after anodization commensurate with the maximum resistance which can be tolerated in the film-forming metal electrode. It has been determined that the preferred minimum thickness of the metal electrode is approximately 1000 A. There is no maximum limit on this thickness, although little advantage is gained by the increase above 10,000 A.
  • a suitable pattern is generated in layer 12 by conventional photoengraving techniques, so resulting in the structure shown in perspective in FIG. 2.
  • a suitable procedure is employed to mask out terminal area 13 such as the use of a grease.
  • FIG. 2 is anodized in an appropriate electrolyte, so resulting in the formation of a dielectric oxide layer 14 on the bottom electrode 12.
  • the voltage at which the anodizing is conducted is primarily determined by the voltage at which the structure is to be operated. Suitable electrolytes for this purpose are oxalic acid, citric acid, and so forth. Backetching and reanodizing may then be employed for the purpose of eliminating defects in the dielectric film.
  • the grease is removed from terminal area 13, so resulting in the structure shown in FIG. 3.
  • the next step in the fabrication of a distributed RC network in accordance with the invention involves the deposition of a low density tantalum layer upon the structure of FIG. 3.
  • the term low density tantalum is defined as tantalum evidencing a density considerably less than the bulk density of 16 grams cm.
  • An optimum has been found to correspond with the range of 10- 12 grams cm. It has been determined that tantalum of normal density results in structures evidencing high leakage currents and numerous short circuits. It has been theorized that such behavior is caused by damage done to the dielectric oxide layer by the impinging high energy tantalum atoms. Accordingly, it is essential that the tantalum film deposited be of low density, that is, produced by means such that essentially no damage occurs to the anodic oxide film.
  • the low density tantalum films required herein may only be obtained by cathodic sputtering techniques utilizing sputtering voltages ranging from 8002500 volts and partial pressures of sputtering gases ranging from 10-100 millitorr. Deviations from the noted extrema fail to generate the required glow discharge or result in the production of normal density tantalum. It will be understood by those skilled in the art that in addition to an inert gas such as argon, reactive gases may be employed in the sputtering reaction, oxygen and nitrogen being prime examples thereof.
  • a resistor pattern 15 (FIG. 4) is generated therein by conventional photoengraving techniques and terminals 16 defined.
  • FIG. 4 is subjected to trim anodization in order to obtain the desired frequency response, conventional anodization techniques being employed.
  • the resultant structure including oxide film 17 is shown in cross-sectional view in FIG. 5 and in plan view in FIG. 6.
  • Example A 1" x 3" glass microscope slide was cleaned with ultrasonic detergent washes and boiling hydrogen peroxide in accordance with conventional techniques. Thereafter, the substrate was positioned in a cathodic sputtering apparatus and a layer of tantalum 4000 A. in thickness deposited at 5000 volts and 300 milliamperes employing conventional techniques. Next, the substrate was subjected to conventional photoengraving techniques to define the desired pattern. Following, the tantalum layer was anodized in a 0.01 percent aqueous solution of citric acid, a constant current phase of 1 milliampere cm. being employed until a voltage of 130 volts was attained. At this point the assembly was left to anodize for 30 minutes at this maximum voltage.
  • the assembly was backetched for five seconds at 75 volts in a 0.01 percent solution of aluminum chloride in methanol in order to eliminate defects in the tantalum pentoxide dielectric layer. Then the assembly was reanodized for 30 minutes at the original anodizing voltage. Next, low density tantalum was deposited upon the anodized layer by cathodic sputtering techniques at 1500 volts and 300 milliamperes with an argon pressure of 35 millitorr. Sputtering was continued for 40 minutes, so resulting in a low density counterelectrode 1800 A. in thickness.
  • the next step in the fabrication of the distributed network involved defining the resistor pattern including terminals in the counterelectrode coating by conventional photoengraving techniques, thereby resulting in a structure similar to that shown in FIG. 4.
  • the resultant structure evidenced a capacitance of 0.10 microfarad Cm. a forward breakdown voltage of 23 volts, a reverse breakdown voltage of 22 volts (breakdown voltage being defined as the voltage at which the current drawn while charging the device at 1 volt per second reaches twice its initial charge current), and a leakage current of 1.5 X amperes at volts.
  • the frequency response of the network is next measured typically in terms of output voltage/ input voltage against frequency or in terms of phase difference between output and input against frequency. As the frequency response will not necessarily be that desired at a given frequency,
  • anodization of the top resistor may be effected until the frequency response measured equals that desired.
  • a method for the fabrication of a thin film distributed RC network which comprises the steps of (a) depositing a layer of a film-forming metal upon a substrate by condensation techniques, (b) anodizing said film-forming metal whereby there is formed an anodic oxide layer, (c) depositing a layer of low density tantalum evidencing a density less than 14 grams cm? upon said anodic oxide layer by cathodic sputtering techniques, the voltages ranging from 8002500 volts and partial pressures of sputtering gas ranging from 10-100 millitorr, and (d) generating a desired resistor pattern in said low density tantalum layer.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Physical Vapour Deposition (AREA)

Description

May 13, 1969 FIG.
w. WOROBEY THIN FILM DISTRIBUTED RC NETWORK Filed 001;. 31, 1966 INVENTOR n4 WOROBE V ZMW A T TORNE Y United States Patent US. Cl. 29-592 4 Claims This invention relates to thin film structures. More particularly, the present invention relates to a novel thin film distributed RC structure.
In recent years, considerable interest has been generated in thin film RC networks because of the inherent advantages of such structures over networks of individual resistors and capacitors, the most important being the relative ease of precisely adjusting the RC product to obtain a desired frequency response by trim anodization of the film resistors.
Unfortunately, the trim anodization technique is not readily applicable to thin film distributed RC networks (which offer several advantages over the lumped thin film RC network, namely, ease in synthesizing a function by the elimination of components, etc.) in which a film capacitor is superpositioned upon a film resistor due to the fact that the superposed counterelectrode prevents trim anodization of the underlying resistor path.
In accordance with the present invention, this prior art limitation is effectively obviated by a novel structure comprising a thin film capacitor having a low density tantalum counterelectrode of a desired resistive configuration. The described structure readily lends itself to precise adjustment of the RC product by trim anodization of the low density tantalum layer, so resulting in the desired frequency response. The novel structures described herein are obtained by preparing a thin film capacitor by conventional techniques, the counterelectrode comprising low density tantalum obtained by cathodic sputtering techniques. Thereafter, conventional photolithographic methods are employed to generate the desired resistive configuration.
The invention would be more readily understood by reference to the following detailed description taken in conjunction with the accompanying drawing wherein:
FIG. 1 is a cross-sectional view of a substrate with a layer of a film-forming metal deposited thereon;
FIG. 2 is a perspective view of the body of FIG. 1 after the generation therein of a desired pattern;
FIG. 3 is a cross-sectional view of the body of FIG. 2 after anodization;
FIG. 4 is a cross-sectional view of the body of FIG. 3 after deposition thereon of a counterelectrode and the generation therein of a desired pattern;
FIG. 5 is a cross-sectional view of the body of FIG. 4 after the trim anodization of the top layer thereof; and
FIG. 6 is a plan view of the body of FIG. 5.
With further reference now to FIG. 1, there is shown a substrate upon which a metallic pattern is to be produced in accordance with the present invention. Preferred substrate materials suitable for this purpose are glazed ceramics, glasses and so forth.
The first step in fabricating a structure in accordance with the invention involves cleansing the substrate by conventional techniques well known to those skilled in the art. Following the cleansing step, a layer of a film-forming metal 12 is deposited upon a substrate 11 by any conventional procedure as, for example, cathodic sputtering, vacuum evaporation and so forth, as described by L. Holland in Vacuum Deposition of Thin Films, J. Wiley & Sons, 1956. The film-forming metals of interest herein are those whose oxides are known to be excellent dielectric ice materials and include tantalum, aluminum, niobium, titanium zirconium and hafnium.
For the purposes of the present invention the minimum thickness of the layer deposited upon the substrate is dependent upon two factors. The first of these is the thickness of the metal which is converted into the oxide form during the subsequent anodizing step. The second factor is the minimum thickness of unoxidized metal remaining after anodization commensurate with the maximum resistance which can be tolerated in the film-forming metal electrode. It has been determined that the preferred minimum thickness of the metal electrode is approximately 1000 A. There is no maximum limit on this thickness, although little advantage is gained by the increase above 10,000 A.
Following the deposition, a suitable pattern is generated in layer 12 by conventional photoengraving techniques, so resulting in the structure shown in perspective in FIG. 2. Prior to anodizing the structure of FIG. 2, a suitable procedure is employed to mask out terminal area 13 such as the use of a grease.
Thereafter, the structure of FIG. 2 is anodized in an appropriate electrolyte, so resulting in the formation of a dielectric oxide layer 14 on the bottom electrode 12. The voltage at which the anodizing is conducted is primarily determined by the voltage at which the structure is to be operated. Suitable electrolytes for this purpose are oxalic acid, citric acid, and so forth. Backetching and reanodizing may then be employed for the purpose of eliminating defects in the dielectric film. Following, the grease is removed from terminal area 13, so resulting in the structure shown in FIG. 3.
The next step in the fabrication of a distributed RC network in accordance with the invention involves the deposition of a low density tantalum layer upon the structure of FIG. 3. For the purposes of the present invention, the term low density tantalum is defined as tantalum evidencing a density considerably less than the bulk density of 16 grams cm. For the purposes of the present invention, it has been found necessary to utilize tantalum evidencing a density less than 14 grams cm. An optimum has been found to correspond with the range of 10- 12 grams cm. It has been determined that tantalum of normal density results in structures evidencing high leakage currents and numerous short circuits. It has been theorized that such behavior is caused by damage done to the dielectric oxide layer by the impinging high energy tantalum atoms. Accordingly, it is essential that the tantalum film deposited be of low density, that is, produced by means such that essentially no damage occurs to the anodic oxide film.
It has been further determined that the low density tantalum films required herein may only be obtained by cathodic sputtering techniques utilizing sputtering voltages ranging from 8002500 volts and partial pressures of sputtering gases ranging from 10-100 millitorr. Deviations from the noted extrema fail to generate the required glow discharge or result in the production of normal density tantalum. It will be understood by those skilled in the art that in addition to an inert gas such as argon, reactive gases may be employed in the sputtering reaction, oxygen and nitrogen being prime examples thereof. Immediately after deposition of the low density tantalum counterelectrode, a resistor pattern 15 (FIG. 4) is generated therein by conventional photoengraving techniques and terminals 16 defined. Thereafter, the structure of FIG. 4 is subjected to trim anodization in order to obtain the desired frequency response, conventional anodization techniques being employed. The resultant structure including oxide film 17 is shown in cross-sectional view in FIG. 5 and in plan view in FIG. 6. In order that those skilled in the art may more fully understand the inventive concept herein 3 presented, the following example is given by way of illustration and not limitation.
Example A 1" x 3" glass microscope slide was cleaned with ultrasonic detergent washes and boiling hydrogen peroxide in accordance with conventional techniques. Thereafter, the substrate was positioned in a cathodic sputtering apparatus and a layer of tantalum 4000 A. in thickness deposited at 5000 volts and 300 milliamperes employing conventional techniques. Next, the substrate was subjected to conventional photoengraving techniques to define the desired pattern. Following, the tantalum layer was anodized in a 0.01 percent aqueous solution of citric acid, a constant current phase of 1 milliampere cm. being employed until a voltage of 130 volts was attained. At this point the assembly was left to anodize for 30 minutes at this maximum voltage.
Following the anodization, the assembly was backetched for five seconds at 75 volts in a 0.01 percent solution of aluminum chloride in methanol in order to eliminate defects in the tantalum pentoxide dielectric layer. Then the assembly was reanodized for 30 minutes at the original anodizing voltage. Next, low density tantalum was deposited upon the anodized layer by cathodic sputtering techniques at 1500 volts and 300 milliamperes with an argon pressure of 35 millitorr. Sputtering was continued for 40 minutes, so resulting in a low density counterelectrode 1800 A. in thickness. The next step in the fabrication of the distributed network involved defining the resistor pattern including terminals in the counterelectrode coating by conventional photoengraving techniques, thereby resulting in a structure similar to that shown in FIG. 4. The resultant structure evidenced a capacitance of 0.10 microfarad Cm. a forward breakdown voltage of 23 volts, a reverse breakdown voltage of 22 volts (breakdown voltage being defined as the voltage at which the current drawn while charging the device at 1 volt per second reaches twice its initial charge current), and a leakage current of 1.5 X amperes at volts.
The frequency response of the network is next measured typically in terms of output voltage/ input voltage against frequency or in terms of phase difference between output and input against frequency. As the frequency response will not necessarily be that desired at a given frequency,
anodization of the top resistor may be effected until the frequency response measured equals that desired.
While the invention has been described in detail in the foregoing specification, and the drawing similarly illustrates the same, the aforementioned is by way of illustration only and is not restrictive in character. The several modifications which will readily suggest themselves to persons skilled in the art are all considered to be within the scope of the invention, reference being had to the appended claims.
What is claimed is:
1. A method for the fabrication of a thin film distributed RC network which comprises the steps of (a) depositing a layer of a film-forming metal upon a substrate by condensation techniques, (b) anodizing said film-forming metal whereby there is formed an anodic oxide layer, (c) depositing a layer of low density tantalum evidencing a density less than 14 grams cm? upon said anodic oxide layer by cathodic sputtering techniques, the voltages ranging from 8002500 volts and partial pressures of sputtering gas ranging from 10-100 millitorr, and (d) generating a desired resistor pattern in said low density tantalum layer.
2. A method in accordance with claim 1 wherein said film-forming metal is tantalum.
3. A method in accordance with claim 1 wherein said low density tantalum is sputtering at 1500 volts with a partial pressure of argon of 35 microns.
4. A method in accordance with the procedure of claim 1 wherein the density of said low density tantalum is Within the range of 1012 grams cmf References Cited UNITED STATES PATENTS 2,694,185 11/1954 Kodama 333 3,109,983 11/1963 Cooper et al. 333--70 X 3,205,555 9/1965 Balde et al. 29-620 X 3,239,731 3/1966 Matovich 317-258 3,330,696 7/1967 Ulleey et al.
JOHN F. CAMPBELL, Primary Examiner.
I. L. CLINE, Assistant Examiner.
US. Cl. X.R.

Claims (1)

1. A METHOD FOR THE FABRICATION OF A THIN FILM DISTRIBUTED RC NETWORK WHICH COMPRISES THE STEPS OF (A) DEPOSITION A LAYER OF A FILM-FORMING METAL UPON A SUBSTRATE BY CONDENSATION TECHNIQUES, (B) ANODIZING SAID FILM-FORMING METAL WHEREBY THERE IS FORMED AN ANODICOXIDE LAYER, (C) DEPOSITION A LAYER OF LOW DENSITY TANTALUM EVIDENCING A DENSITY LESS THAN 14 GRAMS CM. 3 UPON ANODIC OXIDE LAYER BY CATHODIC SPUTTERING TECHNIQUES, THE VOLLAGES RANGING FROM 800-2500 VOLTS AND PARTIAL PRESSURES OF SPUTTERING GAS RANGING FROM 10-1000 MILLITRON, AND (D) GENERATING A DESIRED RESISTOR PATTERN IN SAID LOW DENSITY TANTALUM LAYER.
US590805A 1966-10-31 1966-10-31 Thin film distributed rc network Expired - Lifetime US3443311A (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615760A (en) * 1969-04-14 1971-10-26 Bell Telephone Labor Inc Calcium oxide-aluminum oxide-silicon dioxide ceramic substrate material for thin film circuits
US3784951A (en) * 1968-05-22 1974-01-08 Bell Telephone Labor Inc Thin film resistors
US3993967A (en) * 1975-03-31 1976-11-23 Western Electric Company, Inc. Resistance-capacitance network
US4280889A (en) * 1976-03-11 1981-07-28 Honeywell Inc. Solid state ion responsive and reference electrodes
EP0117008A2 (en) * 1983-02-22 1984-08-29 Philips Electronics Uk Limited Analogue wave filter device
US5311710A (en) * 1992-03-11 1994-05-17 Eaton Jay S Portable curing cell
US5598131A (en) * 1995-11-16 1997-01-28 Emc Technology, Inc. AC coupled termination
CN106024379A (en) * 2016-05-12 2016-10-12 中国电子科技集团公司第四十研究所 Beam lead capacitor processing method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2513859C2 (en) * 1975-03-27 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Method for producing a capacitor-resistor network
DE3024030A1 (en) * 1980-06-26 1982-01-14 Siemens AG, 1000 Berlin und 8000 München RC-Network film circuits - made using a polyimide film support coated on both sides with a poly:fluoroethylene-propylene! polymer
FR2505070B1 (en) * 1981-01-16 1986-04-04 Suwa Seikosha Kk NON-LINEAR DEVICE FOR A LIQUID CRYSTAL DISPLAY PANEL AND METHOD FOR MANUFACTURING SUCH A DISPLAY PANEL

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Publication number Priority date Publication date Assignee Title
US2694185A (en) * 1951-01-19 1954-11-09 Sprague Electric Co Electrical circuit arrangement
US3109983A (en) * 1957-05-02 1963-11-05 Glenn F Cooper Circuits with distributed characteristics
US3205555A (en) * 1961-11-07 1965-09-14 Western Electric Co Methods of making printed circuit components
US3239731A (en) * 1964-04-21 1966-03-08 Hughes Aircraft Co Self-healing thin-film capacitor
US3330696A (en) * 1967-07-11 Method of fabricating thin film capacitors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330696A (en) * 1967-07-11 Method of fabricating thin film capacitors
US2694185A (en) * 1951-01-19 1954-11-09 Sprague Electric Co Electrical circuit arrangement
US3109983A (en) * 1957-05-02 1963-11-05 Glenn F Cooper Circuits with distributed characteristics
US3205555A (en) * 1961-11-07 1965-09-14 Western Electric Co Methods of making printed circuit components
US3239731A (en) * 1964-04-21 1966-03-08 Hughes Aircraft Co Self-healing thin-film capacitor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3784951A (en) * 1968-05-22 1974-01-08 Bell Telephone Labor Inc Thin film resistors
US3615760A (en) * 1969-04-14 1971-10-26 Bell Telephone Labor Inc Calcium oxide-aluminum oxide-silicon dioxide ceramic substrate material for thin film circuits
US3993967A (en) * 1975-03-31 1976-11-23 Western Electric Company, Inc. Resistance-capacitance network
US4280889A (en) * 1976-03-11 1981-07-28 Honeywell Inc. Solid state ion responsive and reference electrodes
EP0117008A2 (en) * 1983-02-22 1984-08-29 Philips Electronics Uk Limited Analogue wave filter device
EP0117008A3 (en) * 1983-02-22 1986-05-14 Philips Electronics Uk Limited Analogue wave filter device
US5311710A (en) * 1992-03-11 1994-05-17 Eaton Jay S Portable curing cell
US5598131A (en) * 1995-11-16 1997-01-28 Emc Technology, Inc. AC coupled termination
CN106024379A (en) * 2016-05-12 2016-10-12 中国电子科技集团公司第四十研究所 Beam lead capacitor processing method

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NL6714773A (en) 1968-05-01
GB1209781A (en) 1970-10-21
MY7400043A (en) 1974-12-31
DE1639061B1 (en) 1971-08-26
SE318648B (en) 1969-12-15
FR1541382A (en) 1968-10-04

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