CN110002395A - A kind of piezoresistive double-shaft motion sensor and preparation method thereof - Google Patents
A kind of piezoresistive double-shaft motion sensor and preparation method thereof Download PDFInfo
- Publication number
- CN110002395A CN110002395A CN201910286325.3A CN201910286325A CN110002395A CN 110002395 A CN110002395 A CN 110002395A CN 201910286325 A CN201910286325 A CN 201910286325A CN 110002395 A CN110002395 A CN 110002395A
- Authority
- CN
- China
- Prior art keywords
- layer
- monocrystalline silicon
- silicon oxide
- oxide layer
- etching groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 155
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 130
- 238000005530 etching Methods 0.000 claims abstract description 118
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 110
- 238000002955 isolation Methods 0.000 claims abstract description 42
- 238000003466 welding Methods 0.000 claims abstract description 40
- 238000012545 processing Methods 0.000 claims description 39
- 229920002120 photoresistant polymer Polymers 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000001259 photo etching Methods 0.000 claims description 18
- 238000004806 packaging method and process Methods 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 6
- -1 boron ion Chemical class 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000011161 development Methods 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000000992 sputter etching Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
Abstract
The application provides a kind of piezoresistive double-shaft motion sensor and preparation method thereof, which includes soi wafer, including the first monocrystalline silicon layer, the first silicon oxide layer and the second monocrystalline silicon layer；First etching groove and the second etching groove are formed in the second monocrystalline silicon layer close to the side of the first silicon oxide layer；Mass block is formed on the second monocrystalline silicon layer, and is formed between the first etching groove and the second etching groove；Doped layer is formed in the side that the second monocrystalline silicon layer deviates from the first silicon oxide layer；Second silicon oxide layer is formed on the second monocrystalline silicon layer and doped layer；Welding layer is formed on the second monocrystalline silicon layer and doped layer, and is formed in the second silicon oxide layer；Isolation channel is formed in side of second etching groove far from mass block；Wherein isolation channel is formed simultaneously with mass block, the first etching groove, the second etching groove.By the above-mentioned means, can reduce residual stress caused by encapsulation and temperature coefficient.
Description
Technical field
This application involves micro-electromechanical system fields, and in particular to a kind of piezoresistive double-shaft motion sensor and its production
Method.
Background technique
MEMS (MEMS, Micro-Electro-Mechanical System), also referred to as mems
System, micro-system, micromechanics etc. refer to size at several millimeters or even smaller high-tech device.MEMS is in microelectronics skill
Grow up on the basis of art (semiconductor processing technology), it is micro- to have merged photoetching, burn into film, LIGA, silicon micromachined, non-silicon
The high-tech electronic mechanical devices of the technologies production such as processing and precision machinery processing.
MEMS is collection microsensor, microactrator, micro mechanical structure, the micro- energy of micro battery, signal processing and control
Circuit processed, high-performance electronic integrated device, interface, communication etc. are in the microdevice or system of one.
Present inventor has found that the area of plane shared by existing sensor component is big in long-term R & D, single brilliant
The total chip-count that can be manufactured in member is few, causes at high cost；The design of device, so that device is originally experienced, the influence of encapsulation is very big,
To which residual stress is big, temperature coefficient is high；The technique manufacture of existing case, so that it is in technique realization, it is complex,
Yield is low, and the period is long.
Summary of the invention
The application provides a kind of piezoresistive double-shaft motion sensor and preparation method thereof, to solve in the prior art due to envelope
Residual stress caused by filling is big, the high problem of temperature coefficient.
In order to solve the above technical problems, the technical solution that the application uses is: providing a kind of piezoresistive double-shaft movement
Sensor, wherein the piezoresistive double-shaft motion sensor includes: soi wafer, including the first monocrystalline silicon layer, the first silicon oxide layer
With the second monocrystalline silicon layer, first silicon oxide layer is set between first monocrystalline silicon layer and second monocrystalline silicon layer；
First etching groove and the second etching groove are formed in second monocrystalline silicon layer close to the side of first silicon oxide layer；Quality
Block is formed on second monocrystalline silicon layer, and is formed between first etching groove and second etching groove；Doping
Layer is formed in the side that second monocrystalline silicon layer deviates from first silicon oxide layer；Second silicon oxide layer is formed in described
On two monocrystalline silicon layers and the doped layer；Welding layer forms on second monocrystalline silicon layer and the doped layer, and is formed in institute
It states in the second silicon oxide layer；Isolation channel is formed in the side of second etching groove far from the mass block；The wherein isolation
Slot is formed simultaneously with the mass block, first etching groove, second etching groove.
In order to solve the above technical problems, another technical solution that the application uses is: providing a kind of piezoresistive double-shaft fortune
The production method of dynamic sensor, wherein piezoresistive double-shaft motion sensor includes soi wafer, and soi wafer includes the first monocrystalline silicon
Layer, the first silicon oxide layer and the second monocrystalline silicon layer, wherein first silicon oxide layer is set to first monocrystalline silicon layer and institute
It states between the second monocrystalline silicon layer；Method includes that away from the side of first silicon oxide layer, setting is mixed in second monocrystalline silicon layer
Diamicton；The second silicon oxide layer is set on second monocrystalline silicon layer and the doped layer；In second monocrystalline silicon layer and institute
It states on doped layer and welding layer is set in second silicon oxide layer；In second monocrystalline silicon layer close to first oxidation
Mass block, the first etching groove, the second etching groove and isolation channel are set simultaneously on the side of silicon layer, and the mass block is formed in described
Between first etching groove and second etching groove, the isolation channel is set to second etching groove far from the mass block
Side.
The beneficial effect of the application is: being in contrast to the prior art, the application provides a kind of piezoresistive double-shaft movement
Sensor and preparation method thereof, the piezoresistive double-shaft motion sensor include soi wafer, including the first monocrystalline silicon layer, the first oxygen
SiClx layer and the second monocrystalline silicon layer；First etching groove and the second etching groove are formed in the second monocrystalline silicon layer close to the first silica
The side of layer；Mass block is formed on the second monocrystalline silicon layer, and is formed between the first etching groove and the second etching groove；Doping
Layer is formed in the side that the second monocrystalline silicon layer deviates from the first silicon oxide layer；Second silicon oxide layer, be formed in the second monocrystalline silicon layer and
On doped layer；Welding layer is formed on the second monocrystalline silicon layer and doped layer, and is formed in the second silicon oxide layer；Isolation channel is formed
In side of second etching groove far from mass block；Wherein isolation channel and mass block, the first etching groove, the second etching groove shape simultaneously
At.By making isolation channel while production quality block, realizes isolation design, solve remaining caused by encapsulation in the prior art
Stress is big, the high problem of temperature coefficient.
Detailed description of the invention
It, below will be to required use in embodiment description in order to illustrate more clearly of the technical solution in application embodiment
Attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description be only apply some embodiments, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure, in which:
Fig. 1 is a kind of cross section structure schematic diagram of one embodiment of piezoresistive double-shaft motion sensor of the application；Fig. 1 is this Shen
It please a kind of cross section structure schematic diagram of one embodiment of piezoresistive double-shaft motion sensor；
Fig. 2 is a kind of structural schematic diagram of one embodiment of piezoresistive double-shaft motion sensor shown in Fig. 1；
Fig. 3 is the structural schematic diagram that piezoresistive double-shaft motion sensor shown in Fig. 2 moves in the first reference axis；
Fig. 4 is the structural schematic diagram that piezoresistive double-shaft motion sensor shown in Fig. 2 moves in the second reference axis；
Fig. 5 is the electrical block diagram of piezoresistive double-shaft motion sensor shown in Fig. 2；
Fig. 6 is a kind of flow diagram of one embodiment of production method of motion sensor of the application；
Fig. 7 is the structural schematic diagram of the piezoresistive double-shaft motion sensor formed after step S14 shown in Fig. 6；
Fig. 8 is a kind of flow diagram of another embodiment of production method of piezoresistive double-shaft motion sensor of the application；
Fig. 9 is the structural schematic diagram of one embodiment of sensitive resistance formed in step S22 shown in Fig. 8；
Figure 10 is the structural schematic diagram of the piezoresistive double-shaft motion sensor formed in step S27 shown in Fig. 8.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of embodiments of the present application, instead of all the embodiments.It is based on
Embodiment in the application, those of ordinary skill in the art are obtained every other when not making creative work
Embodiment belongs to the range of the application protection.
It is to be appreciated that if relating to directionality instruction (such as up, down, left, right, before and after ...) in the embodiment of the present application,
Then directionality instruction is only used for explaining and close in the relative position under a certain particular pose (as shown in the picture) between each component
System, motion conditions etc., if the particular pose changes, directionality instruction is also correspondingly changed correspondingly.
In addition, being somebody's turn to do " first ", " second " etc. if relating to the description of " first ", " second " etc. in the embodiment of the present application
Description be used for description purposes only, be not understood to indicate or imply its relative importance or implicitly indicate indicated skill
The quantity of art feature." first " is defined as a result, the feature of " second " can explicitly or implicitly include at least one spy
Sign.It in addition, the technical solution between each embodiment can be combined with each other, but must be with those of ordinary skill in the art's energy
It is enough realize based on, will be understood that the knot of this technical solution when conflicting or cannot achieve when occurs in the combination of technical solution
Conjunction is not present, also not this application claims protection scope within.
Fig. 1 and Fig. 2 are please referred to, Fig. 1 is a kind of cross section structure of one embodiment of piezoresistive double-shaft motion sensor of the application
Schematic diagram, Fig. 2 are a kind of structural schematic diagrams of one embodiment of piezoresistive double-shaft motion sensor shown in Fig. 1.The present embodiment is taken off
The piezoresistive double-shaft motion sensor 100 shown, piezoresistive double-shaft motion sensor 100 include soi wafer 11, etching groove 12, matter
Gauge block 13, doped layer 14, the second silicon oxide layer 15, welding layer 16 and isolation channel 17.Below with the motion sensor on an axis
For be illustrated.
Specifically, substrate of the soi wafer 11 as production piezoresistive double-shaft motion sensor 100.Soi wafer 11 includes
113 3 layers of first monocrystalline silicon layer 111, the first silicon oxide layer 112 and the second monocrystalline silicon layer, wherein the setting of the first silicon oxide layer 112
Between the first monocrystalline silicon layer 111 and the second monocrystalline silicon layer 113.
Etching groove 12 and mass block 13 can be formed simultaneously.In the present embodiment, etching groove 12 includes the first etching groove
121 and second etching groove 122, the second monocrystalline silicon layer 113 is formed in close to the side of the first silicon oxide layer 112；13 shape of mass block
At on the second monocrystalline silicon layer 113, and it is formed between the first etching groove 121 and the second etching groove 122.
Doped layer 14 is formed in the side that the second monocrystalline silicon layer 113 deviates from the first silicon oxide layer 112.Second silicon oxide layer
15, it is formed on the second monocrystalline silicon layer 113 and doped layer 14.Welding layer 16 forms the second monocrystalline silicon layer 113 and doped layer 14
On, and be formed in the second silicon oxide layer 15.
Isolation channel 17 is formed in the second side of the etching groove 122 far from mass block 13.In the present embodiment, etching groove 12,
Mass block 13 and isolation channel 17 can be formed simultaneously.
In one embodiment, piezoresistive double-shaft motion sensor 100 can also include cantilever beam 18.Cantilever beam 18 wraps
The first cantilever beam 181 and the second cantilever beam 182 are included, the two sides of mass block 13, the first cantilever beam 181 and the first etching groove are formed in
121 match, and the second cantilever beam 182 matches with the second etching groove 122.In the present embodiment, etching groove 12, mass block
13, isolation channel 17 and cantilever beam 18 can be formed simultaneously.Doped layer 14 is also provided at the first cantilever beam 181 far from mass block 13
Side.
In one embodiment, at least partly doped layer 14 is formed on the first cantilever beam 181.Doped layer 14 includes
Heavily doped layer 141 and lightly-doped layer 142, part heavily doped layer 141 are formed on lightly-doped layer 142.
In the present embodiment, doped layer 14 is sensitive resistance, and piezoresistive double-shaft motion sensor 100 may include multiple
Sensitive resistance, multiple sensitive resistance distributions are set on the first cantilever beam 181 and the second cantilever beam 182.For example, pressure resistance type is double
Axis movement sensor 100 includes 8 sensitive resistances, wherein 4 sensitive resistances are set to the first cantilever beam 181, other 4 sensitivities
Resistance is set on the second cantilever beam 182.
In one embodiment, part welding layer 16 is also formed on heavily doped layer 141.
In one embodiment, piezoresistive double-shaft motion sensor 100 further includes cover board 19, and cover board 19 includes the first lid
Plate 191 and the second cover board 192.First cover board, 191 bonding packaging is in the first monocrystalline silicon layer 111 away from the first silicon oxide layer 112
Side；Second cover board, 192 bonding packaging deviates from the side of the second monocrystalline silicon layer 113 in the second silicon oxide layer 15；Welding layer 16 into
One step is exposed to one end of the second cover board 192.
In one embodiment, the first cover board 191 includes the first bonding part 1911 and the second bonding part 1912, the first key
Conjunction portion 1911 is set to first one end of etching groove 121 far from mass block 13, and it is remote that the second bonding part 1912 is set to isolation channel 17
One end from mass block 13.
In one embodiment, the second cover board 192 includes third bond portion 1921 and fourth bond portion 1922, third key
Conjunction portion 1921 and fourth bond portion 1922 are arranged side by side, and third bond portion 1921 is set to welding layer 16 close to the first etching groove
121 side, and be oppositely arranged with the first bonding part 1911；Fourth bond portion 1922 is oppositely arranged with the second bonding part 1912.
In one embodiment, the second cover board 192 further includes welding window (figure does not regard), and welding window is for exposing
Welding layer 16.Third bond portion 1921 is set between welding window and fourth bond portion 1922, third bond portion 1921 and weldering
It is adjacent to connect window.
In one embodiment, the first cover board 191 is by benzocyclobutene (BCB) bonding packaging in the first monocrystalline silicon layer
111 deviate from the side of the first silicon oxide layer 112；Second cover board 192 is by benzocyclobutene bonding packaging in the second silicon oxide layer
15 deviate from the side of the second monocrystalline silicon layer 113.
It is that piezoresistive double-shaft motion sensor shown in Fig. 2 moves in the first reference axis also referring to Fig. 3~Fig. 5, Fig. 3
Structural schematic diagram, Fig. 4 is the structural schematic diagram that piezoresistive double-shaft motion sensor shown in Fig. 2 moves in the second reference axis,
Fig. 5 is the electrical block diagram of piezoresistive double-shaft motion sensor shown in Fig. 2.
In one embodiment, a three-axis reference, including orthogonal first reference axis x, the second coordinate are established
Axis y and third reference axis z.Piezoresistive double-shaft motion sensor 100 includes the first resistor being set on the first change in coordinate axis direction
RX1, second resistance RX2, 3rd resistor RX3With the 4th resistance RX4And the 5th resistance RZ1, the 6th resistance RZ2, the 7th resistance RZ3
With the 8th resistance RZ4, when piezoresistive double-shaft motion sensor 100 is in the direction of the first reference axis x and the direction of third reference axis z
When upper mobile, the resistance change situation of eight resistance is as shown in Table 1, wherein lateral title indicates reference axis where resistance, indulges
Indicate that the direction of motion of double all motion sensors, "+" indicate to increase to title, "-" indicates to reduce.
Table one
The application provides a kind of piezoresistive double-shaft motion sensor 100, which includes
Soi wafer 11, including the first monocrystalline silicon layer 111, the first silicon oxide layer 112 and the second monocrystalline silicon layer 113, the first silicon oxide layer
112 are set between the first monocrystalline silicon layer 111 and the second monocrystalline silicon layer 113；First etching groove 121 and the second etching groove 122, shape
At in the second monocrystalline silicon layer 113 close to the side of the first silicon oxide layer 112；Mass block 13 is formed in the second monocrystalline silicon layer 113
On, and be formed between the first etching groove 121 and the second etching groove 122；Doped layer 14 is formed in the second monocrystalline silicon layer 113 back
Side from the first silicon oxide layer 112；Second silicon oxide layer 15 is formed on the second monocrystalline silicon layer 113 and doped layer 14；Welding
Layer 16 is formed on the second monocrystalline silicon layer 113 and doped layer 14, and is formed in the second silicon oxide layer 15；Isolation channel 17, is formed in
Second side of the etching groove 122 far from mass block 13；Wherein isolation channel 17 and mass block 13, the first etching groove 121, the second quarter
Erosion slot 122 is formed simultaneously.Isolation channel 17 is made while etching by production quality block 13, is realized isolation design, be can reduce
Residual stress caused by encapsulating and temperature coefficient.
Corresponding above-mentioned piezoresistive double-shaft motion sensor, the application is it is further proposed that a kind of piezoresistive double-shaft motion sensor
Production method, referring to Fig. 6, Fig. 6 is a kind of one embodiment of production method of piezoresistive double-shaft motion sensor of the application
Flow diagram.Piezoresistive double-shaft motion sensor includes soi wafer, and soi wafer includes the first monocrystalline silicon layer, the first silica
Layer and the second monocrystalline silicon layer, wherein first silicon oxide layer is set to first monocrystalline silicon layer and second monocrystalline silicon layer
Between.In the present embodiment, using soi wafer as substrate.For example, 4 cun of SOI pieces of selection and 4 inch silicon wafers, SOI piece device
15 μm of thickness of layer, buried oxide layer with a thickness of 500nm, handle layers with a thickness of 380 μm.The present embodiment disclose method include
Following steps:
S11: doped layer is set away from the side of the first silicon oxide layer in the second monocrystalline silicon layer.
Deviate from the side of the first silicon oxide layer in the second monocrystalline silicon layer, the techniques such as oxidation, photoetching, ion implanting can be passed through
Form doped layer.
S12: the second silicon oxide layer is set on the second monocrystalline silicon layer and doped layer.
It is handled on the second monocrystalline silicon layer and doped layer according to predetermined process, to form the second silicon oxide layer, is completed quick
The production of sensing resistor.In one embodiment, multiple sensitive resistances can simultaneously or sequentially be formed.
S13: welding layer is set on the second monocrystalline silicon layer and doped layer and in the second silicon oxide layer.
Photoetching, etching, ion sputtering can be passed through on the second monocrystalline silicon layer and doped layer and in the second silicon oxide layer
Etc. techniques handled, formed welding layer, to complete lead.
S14: the second monocrystalline silicon layer on the side of the first silicon oxide layer simultaneously be arranged mass block, the first etching groove,
Second etching groove and isolation channel, mass block are formed between the first etching groove and the second etching groove, and isolation channel was set to for the second quarter
Lose side of the slot far from mass block.
The techniques such as photoetching, etching are carried out on the side of the first silicon oxide layer in the second monocrystalline silicon layer, are etched simultaneously
First etching groove, the second etching groove and isolation channel, i.e., formed by photoresist the first required etching groove, the second etching groove and
Isolation channel, and mass block is formed between the first etching groove and the second etching groove.Mass block, the first etching groove, the second etching
The depth and width of slot and isolation channel can be made according to preset data, herein without limitation.The pressure resistance type formed at this time is double
Axis movement sensor is as shown in fig. 7, the structure that Fig. 7 is the piezoresistive double-shaft motion sensor formed after step S14 shown in Fig. 6 is shown
It is intended to.Wherein, piezoresistive double-shaft motion sensor 100 includes soi wafer 111, etching groove 12, mass block 13, doped layer 14, the
Silicon dioxide layer 15, welding layer 16 and isolation channel 17.Soi wafer 11 includes the first monocrystalline silicon layer 111, the first silicon oxide layer 112
With the second monocrystalline silicon layer 111, etching groove 12 includes the first etching groove 121 and the second etching groove 122.
The application provides a kind of production method of piezoresistive double-shaft motion sensor, and piezoresistive double-shaft motion sensor includes
Soi wafer, soi wafer includes the first monocrystalline silicon layer, the first silicon oxide layer and the second monocrystalline silicon layer, wherein first silica
Layer is set between first monocrystalline silicon layer and second monocrystalline silicon layer；Method is included in the second monocrystalline silicon layer away from first
Doped layer is arranged in the side of silicon oxide layer；Second silicon oxide layer is set on the second monocrystalline silicon layer and doped layer；In the second monocrystalline
Welding layer is set on silicon layer and doped layer and in the second silicon oxide layer；In the second monocrystalline silicon layer close to the one of the first silicon oxide layer
Mass block, the first etching groove, the second etching groove and isolation channel are set simultaneously on side, mass block is formed in the first etching groove and second
Between etching groove, isolation channel is set to side of second etching groove far from mass block.By while production quality block make every
From slot, isolation design is realized, can reduce residual stress caused by encapsulation and temperature coefficient.
On the basis of the above embodiment, the application is it is further proposed that a kind of production of piezoresistive double-shaft motion sensor
Method, referring to Fig. 8, Fig. 8 is a kind of process of another embodiment of production method of piezoresistive double-shaft motion sensor of the application
Schematic diagram.Part identical with above embodiment is not repeated herein in the present embodiment, and the revealed method of the present embodiment can
With the following steps are included:
S21: doped layer is set away from the side of the first silicon oxide layer in the second monocrystalline silicon layer.
In one embodiment, thermal oxidation is carried out on the second monocrystalline silicon layer obtain the first barrier layer, barrier layer
It may include silica, for stopping etching.Photoresist is set on the first barrier layer, carries out first time photoetching treatment, at this time
First barrier layer can also include photoresist.The processing of first time ion implanting is carried out on the second monocrystalline silicon layer, in the present embodiment
In, the boron ion of the first concentration is injected, lightly-doped layer is obtained.
It is removed photoresist processing on the first barrier layer and makes annealing treatment for the first time.In the present embodiment, pass through ash
Chemical industry skill removes photoresist；First time annealing is carried out by n 2 annealing technique, temperature when annealing is 900 DEG C~1200
DEG C, such as 900 DEG C, 950 DEG C, 1000 DEG C, 1050 DEG C, 1100 DEG C, 1150 DEG C, 1200 DEG C.
Remove the first barrier layer.In the present embodiment, the portion of oxide layer in the first barrier layer can be removed by hydrofluoric acid
Point.
It carries out first time oxidation processes and obtains the second barrier layer, photoresist is set on the second barrier layer, carry out second
Photoetching treatment.The boron ion that the second concentration is injected on the second monocrystalline silicon layer and lightly-doped layer, obtains heavily doped layer, wherein the
Two concentration be greater than the first concentration, i.e., the boron ion of the second concentration be high concentration boron ion.
S22: the second silicon oxide layer is set on the second monocrystalline silicon layer and doped layer.
Doped layer includes that lightly-doped layer and heavily doped layer in the second monocrystalline silicon layer, are lightly doped when the second silicon oxide layer is arranged
It is removed photoresist processing on layer and heavily doped layer and second makes annealing treatment, the second silicon oxide layer is obtained, to form sensitivity
Resistance.The sensitive resistance formed at this time can be as shown in figure 9, Fig. 9 be the sensitive resistance formed in step S22 shown in Fig. 8
The structural schematic diagram of one embodiment.
S23: welding layer is set on the second monocrystalline silicon layer and doped layer and in the second silicon oxide layer.
The lead on the sensitive resistance formed.Specifically, photoresist is set on the second silicon oxide layer, carries out the
Third photo etching processing.Etching processing, such as hydrofluoric acid wet-etching technology are carried out, on the second silicon oxide layer to expose second
Monocrystalline silicon layer and heavily doped layer, obtain fairlead.
Photoresist processing is removed on the second silicon oxide layer, splash-proofing sputtering metal aluminium and silicon, obtain metal in fairlead
Layer.Photoresist is set on the second silicon oxide layer, carries out fourth lithography processing, processing is performed etching to metal layer, removal is drawn
Metallic aluminium other than string holes, to obtain welding layer.
S24: the second monocrystalline silicon layer on the side of the first silicon oxide layer simultaneously be arranged mass block, the first etching groove,
Second etching groove and isolation channel, mass block are formed between the first etching groove and the second etching groove, and isolation channel was set to for the second quarter
Lose side of the slot far from mass block.
This step S24 is used for production quality block, and forms isolation channel while production quality block.Specifically,
Photoresist is arranged away from the side of the first silicon oxide layer in one monocrystalline silicon layer, carries out the 5th photoetching treatment.In the first monocrystalline silicon layer
Deep reaction ion etching is carried out away from the side of the first silicon oxide layer, to expose the first silicon oxide layer.To the first silicon oxide layer
Reactive ion etching is carried out, to expose the second monocrystalline silicon layer.
It is removed photoresist processing away from the side of the first silicon oxide layer in the second monocrystalline silicon layer, obtains mass block, the
One etching groove, the second etching groove, isolation channel, the first cantilever beam, the second cantilever beam and third cantilever beam, mass block are formed in first
Between etching groove and the second etching groove.Wherein isolation channel is set to side of second etching groove far from mass block, the first cantilever beam
The two sides of mass block are formed in the second cantilever beam, the first cantilever beam matches with the first etching groove, the second cantilever beam and second
Etching groove matches；Third cantilever beam matches with isolation channel.The piezoresistive double-shaft motion sensor formed at this time sees figure
7。
It should be noted that be illustrated for forming a sensitive resistance on the first cantilever beam in the present embodiment,
In other embodiments, multiple sensitive resistances can be formed, multiple sensitive resistances can be distributed in the first cantilever beam and second and hang
On arm beam.For example, in the present embodiment, 8 sensitive resistances can be formed, wherein 4 sensitive resistances are set to the first cantilever beam
On, in addition 4 sensitive resistances are set on the second cantilever beam.
S25: release third cantilever beam.
Third cantilever beam is discharged in this step S25 for isolating piezoresistive double-shaft motion sensor moving part.
Photoresist is set on side of second silicon oxide layer away from the second monocrystalline silicon layer；Carry out the 6th photoetching treatment.In the second oxygen
SiClx layer carries out reactive ion etching processing on the side of the second monocrystalline silicon layer, to expose the second monocrystalline silicon layer.?
Reactive ion etching processing is carried out on two monocrystalline silicon layers, to discharge third cantilever beam, thus by piezoresistive double-shaft motion sensor
Moving part isolates.
S26: deviate from the first cover board of side bonding packaging of the first silicon oxide layer in the first monocrystalline silicon layer.
Specifically, using the first monocrystalline silicon piece as the first cover board, the side of the first monocrystalline silicon piece be arranged photoresist into
The 7th photoetching treatment of row, obtains the first bonding part and the second bonding part；In the first monocrystalline silicon layer away from the first silicon oxide layer
First bonding part and the second bonding part and the first monocrystalline silicon layer are carried out bonding packaging processing by side.In the present embodiment, it uses
The smaller organic matter bonding of bonding ring width, is bonded ring width between 50um~100um, for example, 50um, 60um, 70um,
80um, 100um substantially reduce the planar dimension of chip compared to 150um~250um of common bonding technology, thus reduce at
This.
S27: deviate from the second cover board of side bonding packaging of the second monocrystalline silicon layer in the second silicon oxide layer.
Using the second monocrystalline silicon piece as the second cover board, silester deposition processes are carried out in the side of the second monocrystalline silicon piece；
Photoresist is set on silester, the 8th photoetching treatment is carried out, to expose part silester.
First time silester etching processing is carried out to the part silester exposed, to expose photoresist；It removes
Photoresist carries out silicon etching processing；Second of silester etching processing is carried out, welding window is obtained；Carry out glue spraying, exposure and
Development treatment, to form third bond portion and fourth bond portion, wherein third bond portion is adjacent with welding window；By third bond
Portion and fourth bond portion are bonded processing away from the side of the second monocrystalline silicon layer with the second silicon oxide layer, and wherein welding window is corresponding welds
Connect layer setting.For the piezoresistive double-shaft motion sensor formed at this time as shown in Figure 10, Figure 10 is formed in step S27 shown in Fig. 8
Piezoresistive double-shaft motion sensor structural schematic diagram, wherein the second cover board 192 include welding window 1923.
In the present embodiment, same to use the smaller organic matter bonding of bonding ring width, bonding ring width for 50um~
Between 100um, such as 50um, 60um, 70um, 80um, 100um, compared to 150um~250um of common bonding technology, significantly
The planar dimension of chip is reduced, to reduce cost.
After the completion of this step S27, welding layer is not switched on, it is therefore desirable to execute following step S28.
S28: reduction processing is carried out to the second cover board and the first cover board, wherein the second cover board exposes welding window.
In general technique, welding layer region will be opened by way of cutting, and complex process, this case is using thinned
Mode passive open pad area, such as pass through grinding technics.In the present embodiment, the second cover board and the first cover board are subtracted
Thin processing opens welding layer while the second cover board is thinned, has simplified process flow.The piezoresistive double-shaft movement formed at this time
Sensor sees Fig. 1.
It should be noted that in the present embodiment, concrete technology used in the identical processing mode of title can be identical,
Such as annealing is that n 2 annealing is handled, removal photoresist processing all can be cineration technics.
The application provides a kind of production method of piezoresistive double-shaft motion sensor, and piezoresistive double-shaft motion sensor includes
Soi wafer, soi wafer includes the first monocrystalline silicon layer, the first silicon oxide layer and the second monocrystalline silicon layer, wherein first silica
Layer is set between first monocrystalline silicon layer and second monocrystalline silicon layer；Method is included in the second monocrystalline silicon layer away from first
Doped layer is arranged in the side of silicon oxide layer；Second silicon oxide layer is set on the second monocrystalline silicon layer and doped layer；In the second monocrystalline
Welding layer is set on silicon layer and doped layer and in the second silicon oxide layer；In the first monocrystalline silicon layer close to the one of the first silicon oxide layer
Mass block, the first etching groove, the second etching groove and isolation channel are set simultaneously on side, mass block is formed in the first etching groove and second
Between etching groove, isolation channel is set to side of second etching groove far from mass block.It is bonded by using organic photoresist, so that
Photoresist had both been used as structure sheaf and sacrificial layer, after the completion of the photoresist for not needing region is exposed and cleaned, directly with upper
The bonding of one cover board, simplifies process flow, to improve product yield and production efficiency；Make welding disking area windowing when
It waits, by way of being thinned, directly opens desired zone；Isolation channel is made while production quality block, realizes isolation design, it will
The moving part of piezoresistive double-shaft motion sensor isolates, and can reduce residual stress caused by encapsulation and temperature coefficient.
The above is only presently filed embodiments, are not intended to limit the scope of the patents of the application, all to utilize the application
Equivalent structure or equivalent flow shift made by specification and accompanying drawing content is applied directly or indirectly in other relevant technologies
Field similarly includes in the scope of patent protection of the application.
Claims (10)
1. a kind of piezoresistive double-shaft motion sensor, which is characterized in that the piezoresistive double-shaft motion sensor includes:
Soi wafer, including the first monocrystalline silicon layer, the first silicon oxide layer and the second monocrystalline silicon layer, the first silicon oxide layer setting
Between first monocrystalline silicon layer and second monocrystalline silicon layer；
First etching groove and the second etching groove are formed in second monocrystalline silicon layer close to the side of first silicon oxide layer；
Mass block is formed on second monocrystalline silicon layer, and be formed in first etching groove and second etching groove it
Between；
Doped layer is formed in the side that second monocrystalline silicon layer deviates from first silicon oxide layer；
Second silicon oxide layer is formed on second monocrystalline silicon layer and the doped layer；
Welding layer is formed on second monocrystalline silicon layer and the doped layer, and is formed in second silicon oxide layer；
Isolation channel is formed in the side of second etching groove far from the mass block；The wherein isolation channel and the quality
Block, first etching groove, second etching groove are formed simultaneously.
2. piezoresistive double-shaft motion sensor according to claim 1, which is characterized in that the piezoresistive double-shaft movement passes
Sensor further include:
First cantilever beam and the second cantilever beam are formed in the two sides of the mass block, first cantilever beam and first quarter
Erosion slot matches, and second cantilever beam matches with second etching groove；It is outstanding that the doped layer is also provided at described first
Side of the arm beam far from the mass block；
First cover board, the first cover board bonding packaging deviate from the one of first silicon oxide layer in first monocrystalline silicon layer
Side；
Second cover board, the second cover board bonding packaging deviate from the one of second monocrystalline silicon layer in second silicon oxide layer
Side；The welding layer is further exposed to one end of second cover board.
3. a kind of production method of piezoresistive double-shaft motion sensor, which is characterized in that the piezoresistive double-shaft motion sensor
Including soi wafer, the soi wafer includes the first monocrystalline silicon layer, the first silicon oxide layer and the second monocrystalline silicon layer, wherein described the
One silica layer is set between first monocrystalline silicon layer and second monocrystalline silicon layer；The described method includes:
Doped layer is set away from the side of first silicon oxide layer in second monocrystalline silicon layer；
The second silicon oxide layer is set on second monocrystalline silicon layer and the doped layer；
Welding layer is set on second monocrystalline silicon layer and the doped layer and in second silicon oxide layer；
Second monocrystalline silicon layer on the side of first silicon oxide layer simultaneously be arranged mass block, the first etching groove,
Second etching groove and isolation channel, the mass block are formed between first etching groove and second etching groove, it is described every
The side of second etching groove far from the mass block is set to from slot.
4. according to the method described in claim 3, it is characterized in that, in the second monocrystalline silicon layer away from first silicon oxide layer
Side be arranged doped layer the step of include:
Thermal oxidation is carried out on second monocrystalline silicon layer obtains the first barrier layer；
Photoresist is set on first barrier layer, carries out first time photoetching treatment；
The boron ion that the first concentration is injected on second monocrystalline silicon layer, obtains lightly-doped layer；
It is removed photoresist processing on first barrier layer and makes annealing treatment for the first time；
Remove the first barrier layer；
It carries out first time oxidation processes and obtains the second barrier layer；
Photoresist is set on second barrier layer, carries out second of photoetching treatment；
The boron ion that the second concentration is injected on second monocrystalline silicon layer and the lightly-doped layer, obtains heavily doped layer；It is described
Second concentration is greater than first concentration；
Include: in the step of the second silicon oxide layer is arranged on second monocrystalline silicon layer and the doped layer
Photoresist processing and second are removed on second monocrystalline silicon layer, the lightly-doped layer and the heavily doped layer
Annealing, obtains second silicon oxide layer, to form sensitive resistance.
5. according to the method described in claim 4, it is characterized in that, on second monocrystalline silicon layer and the doped layer and
The step of setting welding layer, includes: in second silicon oxide layer
Photoresist is set on second silicon oxide layer, carries out third time photoetching treatment；
Etching processing is carried out on second silicon oxide layer, second monocrystalline silicon layer and the heavily doped layer is exposed, obtains
To fairlead；
Photoresist processing is removed on second silicon oxide layer；
Splash-proofing sputtering metal aluminium and silicon, obtain metal layer in the fairlead；
Photoresist is set on second silicon oxide layer, carries out fourth lithography processing；
Processing is performed etching to the metal layer, obtains the welding layer.
6. according to the method described in claim 4, it is characterized in that, in second monocrystalline silicon layer close to first silica
Mass block, first the second etching groove of etching groove are set simultaneously on the side of layer, the mass block is formed in first etching groove
The step of between second etching groove includes:
Photoresist is set away from the side of first silicon oxide layer in first monocrystalline silicon layer, is carried out at the 5th photoetching
Reason；
Deep reaction ion etching is carried out away from the side of first silicon oxide layer in first monocrystalline silicon layer, to expose
State the first silicon oxide layer；
Reactive ion etching is carried out to first silicon oxide layer, to expose second monocrystalline silicon layer；
It is removed photoresist processing away from the side of first silicon oxide layer in first monocrystalline silicon layer, obtains quality
Block, the first etching groove, the second etching groove, isolation channel, the first cantilever beam, the second cantilever beam and third cantilever beam, the mass block
It is formed between first etching groove and second etching groove.
7. according to the method described in claim 3, it is characterized in that, the method further includes:
Deviate from the first cover board of side bonding packaging of first silicon oxide layer in first monocrystalline silicon layer；
Deviate from the second cover board of side bonding packaging of second monocrystalline silicon layer in second silicon oxide layer.
8. the method according to the description of claim 7 is characterized in that deviating from first silica in first monocrystalline silicon layer
Include: before the step of side the first cover board of bonding packaging of layer
Photoresist is set on side of second silicon oxide layer away from second monocrystalline silicon layer, is carried out at the 6th photoetching
Reason；
Reactive ion etching processing is carried out on side of second silicon oxide layer away from second monocrystalline silicon layer, with exposed
Second monocrystalline silicon layer out；
Reactive ion etching processing is carried out, on second monocrystalline silicon layer to discharge the third cantilever beam.
9. the method according to the description of claim 7 is characterized in that deviating from first silica in first monocrystalline silicon layer
Layer side the first cover board of bonding packaging the step of include:
Using the first monocrystalline silicon piece as first cover board, in the side of first monocrystalline silicon piece, setting photoresist carries out the 7th
Secondary photoetching treatment obtains first bonding part and second bonding part；
Deviate from the side of first silicon oxide layer in first monocrystalline silicon layer, by first bonding part and second key
Conjunction portion and first monocrystalline silicon layer carry out bonding packaging processing.
10. the method according to the description of claim 7 is characterized in that deviating from second monocrystalline in second silicon oxide layer
The step of side the second cover board of bonding packaging of silicon layer includes:
Using the second monocrystalline silicon piece as second cover board, silester lodgment is carried out in the side of second monocrystalline silicon piece
Reason；
Photoresist is set on the silester, the 8th photoetching treatment is carried out, to expose the part silester；
First time silester etching processing is carried out the part exposed the silester, to expose the photoresist；
The photoresist is removed, silicon etching processing is carried out；
Second of silester etching processing is carried out, welding window is obtained；
Glue spraying, exposure and development treatment are carried out, to form the third bond portion and the fourth bond portion, wherein the third
Bonding part is adjacent with the welding window；
By the third bond portion and the fourth bond portion and second silicon oxide layer away from second monocrystalline silicon layer
Side bonding processing, wherein the welding window corresponds to the welding layer setting；
After the step of second silicon oxide layer deviates from side the second cover board of bonding packaging of second monocrystalline silicon layer also
Include:
Reduction processing is carried out to second cover board and first cover board, wherein second cover board exposes the welding window
Mouthful.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910286325.3A CN110002395A (en) | 2019-04-10 | 2019-04-10 | A kind of piezoresistive double-shaft motion sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910286325.3A CN110002395A (en) | 2019-04-10 | 2019-04-10 | A kind of piezoresistive double-shaft motion sensor and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110002395A true CN110002395A (en) | 2019-07-12 |
Family
ID=67170902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910286325.3A Pending CN110002395A (en) | 2019-04-10 | 2019-04-10 | A kind of piezoresistive double-shaft motion sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110002395A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021023251A1 (en) * | 2019-08-06 | 2021-02-11 | 西人马联合测控（泉州）科技有限公司 | Mems structure, mems structure manufacturing method, and tire pressure sensor |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102190284A (en) * | 2010-03-11 | 2011-09-21 | 苏州敏芯微电子技术有限公司 | MEMS sensor and methods for manufacturing MEMS sensor, film, mass block and cantilever beam |
| CN102798734A (en) * | 2011-05-24 | 2012-11-28 | 中国科学院上海微系统与信息技术研究所 | Micro-electromechanical system (MEMS) triaxial accelerometer and manufacturing method thereof |
| US20140097508A1 (en) * | 2012-09-21 | 2014-04-10 | Chinese Academy of Sciences Institute of Geology and Geophysics | Accelerometer and its fabrication technique |
| CN104748904A (en) * | 2015-03-24 | 2015-07-01 | 西安交通大学 | Sectional mass block stressed concentration structural micro-pressure sensor chip and preparation method |
| CN105174203A (en) * | 2014-05-28 | 2015-12-23 | 无锡华润上华半导体有限公司 | Method for manufacturing sensor based on MEMS |
| CN105353167A (en) * | 2015-12-01 | 2016-02-24 | 上海芯赫科技有限公司 | MEMS piezoresistive type acceleration sensor and processing method for the same |
| CN107265397A (en) * | 2017-06-08 | 2017-10-20 | 广东合微集成电路技术有限公司 | The piezoresistance type acceleration sensor and its manufacture method of a kind of suitable surface mount process |
| CN107796955A (en) * | 2017-09-30 | 2018-03-13 | 西安交通大学 | Double-axel acceleration sensor chip and preparation method thereof in more beam type single mass faces |
| US20180299335A1 (en) * | 2015-08-17 | 2018-10-18 | Institute Of Ceology And Geophysics, Chinese Academy Of Sciences | Mems strain gauge sensor and manufacturing method |
| CN209721578U (en) * | 2019-04-10 | 2019-12-03 | 北京盛通恒瑞科贸有限公司 | A kind of piezoresistive double-shaft motion sensor |
-
2019
- 2019-04-10 CN CN201910286325.3A patent/CN110002395A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102190284A (en) * | 2010-03-11 | 2011-09-21 | 苏州敏芯微电子技术有限公司 | MEMS sensor and methods for manufacturing MEMS sensor, film, mass block and cantilever beam |
| CN102798734A (en) * | 2011-05-24 | 2012-11-28 | 中国科学院上海微系统与信息技术研究所 | Micro-electromechanical system (MEMS) triaxial accelerometer and manufacturing method thereof |
| US20140097508A1 (en) * | 2012-09-21 | 2014-04-10 | Chinese Academy of Sciences Institute of Geology and Geophysics | Accelerometer and its fabrication technique |
| CN105174203A (en) * | 2014-05-28 | 2015-12-23 | 无锡华润上华半导体有限公司 | Method for manufacturing sensor based on MEMS |
| CN104748904A (en) * | 2015-03-24 | 2015-07-01 | 西安交通大学 | Sectional mass block stressed concentration structural micro-pressure sensor chip and preparation method |
| US20180299335A1 (en) * | 2015-08-17 | 2018-10-18 | Institute Of Ceology And Geophysics, Chinese Academy Of Sciences | Mems strain gauge sensor and manufacturing method |
| CN105353167A (en) * | 2015-12-01 | 2016-02-24 | 上海芯赫科技有限公司 | MEMS piezoresistive type acceleration sensor and processing method for the same |
| CN107265397A (en) * | 2017-06-08 | 2017-10-20 | 广东合微集成电路技术有限公司 | The piezoresistance type acceleration sensor and its manufacture method of a kind of suitable surface mount process |
| CN107796955A (en) * | 2017-09-30 | 2018-03-13 | 西安交通大学 | Double-axel acceleration sensor chip and preparation method thereof in more beam type single mass faces |
| CN209721578U (en) * | 2019-04-10 | 2019-12-03 | 北京盛通恒瑞科贸有限公司 | A kind of piezoresistive double-shaft motion sensor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021023251A1 (en) * | 2019-08-06 | 2021-02-11 | 西人马联合测控（泉州）科技有限公司 | Mems structure, mems structure manufacturing method, and tire pressure sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0506491B1 (en) | An overpressure-protected differential pressure sensor and method of making the same | |
| US6445053B1 (en) | Micro-machined absolute pressure sensor | |
| CN107265395B (en) | Method for producing a MEMS pressure sensor and corresponding MEMS pressure sensor | |
| US9458009B2 (en) | Semiconductor devices and methods of forming thereof | |
| US8906730B2 (en) | Method of forming membranes with modified stress characteristics | |
| EP3052901B1 (en) | Inertial and pressure sensors on single chip | |
| KR20120067306A (en) | A method for fabricating a sensor | |
| CN102157679A (en) | Method for fabricating a sensor | |
| US20150192487A1 (en) | Low pressure sensors and flow sensors | |
| WO1998015807A1 (en) | Silicon at least 5 micron high acute cavity with channel by oxidizing fusion bonding and stop etching | |
| CN105097809B (en) | Mechanical stress uncoupling in semiconductor devices | |
| CN104864988B (en) | MEMS pressure sensor of silicon island membrane structure and preparation method thereof | |
| JP2012242398A (en) | Device for measuring environmental forces and method of fabricating the same | |
| CN104058361A (en) | Processing method of integrated piezoresistive accelerometer and pressure meter which are based on prefabricated cavity SOI (silicon on insulator) substrate | |
| JP2012506616A (en) | MEMS device packaged at wafer level | |
| US20170001857A1 (en) | Sensor element and method of manufacturing the same | |
| WO2020177339A1 (en) | Pressure sensor and manufacturing method therefor | |
| CN209721578U (en) | A kind of piezoresistive double-shaft motion sensor | |
| CN110002395A (en) | A kind of piezoresistive double-shaft motion sensor and preparation method thereof | |
| CN114275731A (en) | MEMS-based double-beam type micro-pressure sensing core and preparation process thereof | |
| US20150291414A1 (en) | Mems device having conductive microstructures laterally surrounded by oxide material | |
| CN102980695B (en) | MEMS (Micro Electro Mechanical System) piezoresistive type absolute pressure sensor based on SOI (Silicon on Insulator) silicon chip | |
| JP2000155030A (en) | Manufacture of angular velocity sensor | |
| CN107074531A (en) | Method and corresponding device for manufacturing electromechanical equipment | |
| Alvi | MEMS pressure sensors: fabrication and process optimization |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Country or region after: China Address after: 101200 269 Da Huashan street, Dahuashan Town, Pinggu District, Beijing. Applicant after: Beijing Shinton Co.,Ltd. Address before: 101200 269 Da Huashan street, Dahuashan Town, Pinggu District, Beijing. Applicant before: BEIJING SHENGTONG HENGRUI TRADING Co.,Ltd. Country or region before: China |
|
| CB02 | Change of applicant information |