CN100403033C - Bonding technology for silicon micro acceleration transducer - Google Patents
Bonding technology for silicon micro acceleration transducer Download PDFInfo
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- CN100403033C CN100403033C CNB2005100098424A CN200510009842A CN100403033C CN 100403033 C CN100403033 C CN 100403033C CN B2005100098424 A CNB2005100098424 A CN B2005100098424A CN 200510009842 A CN200510009842 A CN 200510009842A CN 100403033 C CN100403033 C CN 100403033C
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Abstract
The present invention provides a bonding technology for a silicon micro acceleration transducer. Both surfaces of a master chip are respectively sputtered with a metal alloy thin film, wherein the master chip adopts a plane IC technology to be provided with a figure at the front surface and a figure at the back surface. Light is engraved in edge regions at both of the two surfaces, which forms a metal congruent melting region. The surface provided with a figure on an upper cover provided with the figure of the upper cover of an acceleration transducer is sputtered with a metal alloy thin film. Light is engraved in an edge region, which forms a metal congruent melting region. The surface provided with a figure on a lower cover provided with the figure of the lower cover of the acceleration transducer is sputtered with a metal alloy thin film. Light is engraved in an edge region, which forms a metal congruent melting region. The upper cover, the master chip and the lower cover which are produced are aligned. In the temperature of 360 DEG C to 380 DEG C, heat is insulated for 25 to 35 minutes, and the upper cover, the master chip and the lower cover are bonded. The technology of the present invention can eliminate the problems that the doped redistribution is caused by bonding and high temperature bonding of a silicon micro mechanical transducer, stress is caused by thermal expansion, elements are ineffective because the temperature exceeds an aluminum silicon eutectic point, etc.
Description
(1) technical field
What the present invention relates to is a kind of micromachining technology, and specifically silicon-silicon bond closes technology.
(2) background technology
Research to micromechanics (MEMS) at present also mainly is based on silicon materials.For the machining among the MEMS, there have two kinds of technology to use to be the most extensive---surface micromachined technology and bulk silicon micro mechanic process technology.The surface micromachined technology mainly is the preparation and the corrosion of structural sheet and sacrifice layer.Because surface micromachined technology and IC planar technology compatibility are good, so it has obtained using widely.But the longitudinal size of the mechanical part of this processes often is restricted (2～5 μ m).Body silicon processing technique mainly is wet etching and dry etching.The mechanical part all directions size of its processing is given the great dirigibility of system designer almost without limits, is 3-D technology truly.But body silicon processing technique and IC processing compatibility are not so good.Have the wafer bonding technology only and could overcome this problem effectively.Bonding is meant the method that silicon chip and silicon chip, silicon chip and glass or other material is closely combined by chemistry and physical action.Though wafer bonding is not the direct approach of micromachined, critical role is arranged in micromachined.It often is used in combination with other means, both can support and protects microstructure, can realize between the physical construction again or physical construction is connected with electricity between the circuit.IC can be integrated on any bonding silicon chip in theory, but conventional bonding techniques reaches certain intensity in order to make bonded interface, usually will use high temperature (more than 1000 ℃) annealing, thereby bring many negative effects.High temperature can cause the distribution again of doping, and the thermal expansion meeting brings stress, if having IC to exist and when aluminum lead was arranged, temperature surpassed the al-si eutectic point and causes component failure.In order to make bonded energy be applied to better be necessary to study low-temperature bonding among the MEMS.The effect of pyroprocessing in bonding is to strengthen bond strength.Therefore the implication of low-temperature bonding is exactly that annealing temperature is lower and bond strength will reach certain requirement.At present, the wafer bonding technology mainly contains silicon/glass anode linkage method, silicon/Si direct bonding method and glass solder sintering process etc.
(3) summary of the invention
The object of the present invention is to provide and a kind ofly can eliminate the distribution again that silicon micro mechanical sensor bonding high temperature bonding causes doping, stress that thermal expansion brings and temperature surpass the bonding method that is applied to silicon micro-acceleration sensor that the al-si eutectic point causes problem such as component failure.
The object of the present invention is achieved like this:
A. adopting planar I C technology to be manufactured with the two sides splash-proofing sputtering metal alloy firm of the master chip of front description and back side figure on the two sides, form metal congruent melting district by the fringe region of photoetching on the two sides;
B. the loam cake that is manufactured with acceleration transducer loam cake figure picture surface splash-proofing sputtering metal alloy firm arranged, form metal congruent melting district by the photoetching edge region;
C. the lower cover that is manufactured with acceleration transducer lower cover figure picture surface splash-proofing sputtering metal alloy firm arranged, form metal congruent melting district by the photoetching edge region;
D. loam cake, master chip, the lower cover made are aimed at, under 360 ℃ of-380 ℃ of temperature, and bonding was carried out in insulation in 25-35 minute.
The present invention can also comprise some feature features like this:
1, the emtal alloy film of described sputter has three layers, and ground floor is the Cr metal, and the second layer is the Cr-Si alloy, and the 3rd layer is the Au metal.
2, the thickness of the emtal alloy film of described sputter is respectively: Cr-0.1 μ m, Cr-Si alloy-0.1 μ m, Au-0.5 μ m.
3, Cr-Si alloy two phase system silicone content is 30at.%.
4, best bonding temperature is 370 ℃, 30 minutes best bonding time.
The present invention is directed to the technical issues that need to address, it is the distribution again that can cause doping at silicon micro mechanical (MEMS) sensor bonding high temperature bonding, the thermal expansion meeting brings stress and temperature to cause problems such as component failure above the al-si eutectic point, has invented a kind of low-temperature bonding method that utilizes the gold silicon congruent melting to have eutectic point and has been made into acceleration transducer.Acceleration transducer is made up of loam cake, master chip and lower cover.Loam cake, master chip and lower cover form metal congruent melting district by sputter or method of evaporating deposition chromium film, chromium-silicon alloy film and golden film three-layer thin-film by photoetching, and loam cake, master chip and lower cover utilize the generation congruent melting of metal congruent melting district to seal.Its beneficial effect is though wafer bonding is not the direct approach of MEMS micromachined, critical role to be arranged in micromachined.It often is used in combination with other means, both can support and protects microstructure, can realize between the physical construction again or physical construction is connected with electricity between the circuit.Utilize gold-silicon congruent melting bonding can realize silicon-silicon low-temperature bonding, the effect of support is played in technical development to MEMS.
(4) description of drawings
Fig. 1 is a master chip front domain;
Fig. 2 is a master chip back side domain;
Fig. 3 is the loam cake domain;
Fig. 4 is the lower cover domain;
Fig. 5 is arrangements of accelerometers figure.
(5) specific embodiments
For example the present invention is done more detailed description below in conjunction with accompanying drawing:
A. adopt planar I C technology to make the master chip front description according to domain shown in Figure 1, comprise oxidation, photoetching, ion injection, double-faced sputter emtal alloy film, form metal congruent melting district by photoetching;
B. make master chip back side figure according to domain shown in Figure 2, form metal congruent melting district by photoetching, the using plasma lithographic technique is made the accelerometer elastic beam;
C. make accelerometer loam cake figure according to domain shown in Figure 3, form metal congruent melting district by photoetching;
D. make accelerometer lower cover figure according to domain shown in Figure 4, form metal congruent melting district by photoetching;
E. master chip, loam cake, the lower cover made are aimed at bonding in metal congruent melting district.
Wherein the emtal alloy film of sputter is Cr metal, Cr-Si alloy, Au metal, and its thickness is Cr-0.1 μ m, Cr-Si alloy-0.1 μ m, Au-0.5 μ m; Cr-Si alloy two phase system silicone content is 30at.%.370 ℃ of bonding temperatures, 30 minutes time.
Claims (2)
1. bonding method that is applied to silicon micro-acceleration sensor is characterized in that:
A. adopting planar I C technology to be manufactured with the two sides splash-proofing sputtering metal alloy firm of the master chip of front description and back side figure on the two sides, form metal congruent melting district by the fringe region of photoetching on the two sides;
B. the loam cake that is manufactured with acceleration transducer loam cake figure picture surface splash-proofing sputtering metal alloy firm arranged, form metal congruent melting district by the photoetching edge region;
C. the lower cover that is manufactured with acceleration transducer lower cover figure picture surface splash-proofing sputtering metal alloy firm arranged, form metal congruent melting district by the photoetching edge region;
D. loam cake, master chip, the lower cover made are aimed at, under 370 ℃ of temperature, and be incubated 30 minutes and carry out bonding;
The emtal alloy film of described sputter has three layers, and ground floor is the Cr metal, and the second layer is the Cr-Si alloy, and the 3rd layer is the Au metal, and thickness is respectively: Cr-0.1 μ m, Cr-Si alloy-0.1 μ m, Au-0.5 μ m.
2. the bonding method that is applied to silicon micro-acceleration sensor according to claim 1 is characterized in that: Cr-Si alloy two phase system silicone content is 30at.%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100098424A CN100403033C (en) | 2005-03-23 | 2005-03-23 | Bonding technology for silicon micro acceleration transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100098424A CN100403033C (en) | 2005-03-23 | 2005-03-23 | Bonding technology for silicon micro acceleration transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1837828A CN1837828A (en) | 2006-09-27 |
| CN100403033C true CN100403033C (en) | 2008-07-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005100098424A Expired - Fee Related CN100403033C (en) | 2005-03-23 | 2005-03-23 | Bonding technology for silicon micro acceleration transducer |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100513298C (en) * | 2006-11-28 | 2009-07-15 | 厦门大学 | Method for bonding silicon with gold |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040067604A1 (en) * | 2002-10-04 | 2004-04-08 | Luc Ouellet | Wafer level packaging technique for microdevices |
| CN1489180A (en) * | 2003-09-05 | 2004-04-14 | 中国电子科技集团公司第十三研究所 | Absolute-dry-method deep-etching micro-mechanical processing method based on silocon-silicon linkage |
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2005
- 2005-03-23 CN CNB2005100098424A patent/CN100403033C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040067604A1 (en) * | 2002-10-04 | 2004-04-08 | Luc Ouellet | Wafer level packaging technique for microdevices |
| CN1489180A (en) * | 2003-09-05 | 2004-04-14 | 中国电子科技集团公司第十三研究所 | Absolute-dry-method deep-etching micro-mechanical processing method based on silocon-silicon linkage |
Non-Patent Citations (6)
| Title |
|---|
| 压阻式硅微加速度计的研制. 张精华，田雷，迟晓珠等.传感器技术，第22卷第12期. 2003 |
| 压阻式硅微加速度计的研制. 张精华，田雷，迟晓珠等.传感器技术，第22卷第12期. 2003 * |
| 用于MEMS器件芯片级封装的金－硅键合技术研究. 刘雪松，闫桂珍，郝一龙等.微纳电子技术，第7/8期. 2003 |
| 用于MEMS器件芯片级封装的金－硅键合技术研究. 刘雪松，闫桂珍，郝一龙等.微纳电子技术，第7/8期. 2003 * |
| 硅片键合技术的研究进展. 李和太，李晔辰.传感器世界. 2002 |
| 硅片键合技术的研究进展. 李和太，李晔辰.传感器世界. 2002 * |
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| CN1837828A (en) | 2006-09-27 |
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