CN1554566A - Silicon-aluminium-silicon structure micro machinery processing method of full dry method - Google Patents
Silicon-aluminium-silicon structure micro machinery processing method of full dry method Download PDFInfo
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- CN1554566A CN1554566A CNA2003101097171A CN200310109717A CN1554566A CN 1554566 A CN1554566 A CN 1554566A CN A2003101097171 A CNA2003101097171 A CN A2003101097171A CN 200310109717 A CN200310109717 A CN 200310109717A CN 1554566 A CN1554566 A CN 1554566A
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- 238000000034 method Methods 0.000 title claims abstract description 24
- -1 Silicon-aluminium-silicon structure Chemical group 0.000 title claims description 21
- 238000003672 processing method Methods 0.000 title claims description 12
- 238000000992 sputter etching Methods 0.000 claims abstract description 20
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 239000004411 aluminium Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 238000003475 lamination Methods 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 230000009977 dual effect Effects 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 229910018125 Al-Si Inorganic materials 0.000 abstract 2
- 229910018520 Al—Si Inorganic materials 0.000 abstract 2
- 230000001133 acceleration Effects 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000007096 poisonous effect Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 108091092878 Microsatellite Proteins 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000036244 malformation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000000505 pernicious effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004874 x-ray synchrotron radiation Methods 0.000 description 1
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Abstract
The present invention discloses fully dry process of making micro machine in Si-Al-Si structure, and relates to the manufacture of device for microelectronic mechanical system. The technological process including double-side photoetching, deep reaction ion etching and Si-Al-Si linking is adopted to realize manufacture of movable suspension structure with low stress and great longitudinal size and reaching the aims of optimizing micro machine making process, lowing cost, simplifying and raising product quality. The present invention is suitable for the manufacture of optical switch, capacitive micro acceleration meter, variable light attenuator and other movable micro structure devices.
Description
Technical field
The present invention relates to a kind of Dry Method Silicon-aluminium-Silicon Structure micromechanical Processing Method in the microelectron-mechanical processing technique field, be specially adapted to multiple making with low stress, smooth surface is smooth, longitudinal size is big movable microelectron mechanical structure device.
Background technology
Microelectromechanical systems claims MEMS again, it is meant that size is below the millimeter magnitude, can control, movable microelectromechanicdevice device, it is at the mechanical component of realizing on the millimicron size existing on many macroscopic scales, and and microelectronics organically in conjunction with constituting system with specific function, it have in light weight, volume is little, cost is low and advantage such as integrated.Microelectromechanical systems both can collect sensor, actuator and digital circuit on a block semiconductor chip, realized that whole system is integrated, sensor, actuator and circuit can be made respectively again mix again integrated.The main application fields of microelectromechanical systems has: guidance, navigation, micro-satellite, weapons, radar, optic communication, microwave communication, medical science etc.
The microelectron-mechanical process technology also becomes more and more important as its status, MEMS processing basis with effect.The microelectron-mechanical process technology is based on silicon, also has LIGA, accurate LIGA and based on metal or the processing of nonmetallic precision optical machinery.Silica-based little processing is divided into processing of body silicon and surface silicon processing.The processing of body silicon is divided into body silicon " sandwich " again, body dissolved silicon chip, front body silicon, SOI and SCREAM etc.Silica-based technology and LIGA, accurate LIGA technology are easy to prepared in batches, become the main flow of microelectromechanical systems manufacturing technology gradually.LIGA technology originates from Germany, and its advantage is the depth-to-width ratio height of making, the device performance height of producing.But because processing needs the X-ray synchrotron radiation source, processing cost is too high, and the user is less at present.In silica-based technology, Surface Machining adopts multi-layer film structure (being generally less than 3 μ m) and sacrifice layer corrosion technology, complex manufacturing technology and wayward, present domestic employing is less, the main bulk silicon technological that adopts, what employing was maximum in bulk silicon technological is body dissolved silicon chip technology, it is the double-decker of silicon-glass bonding, compare bulk silicon technological with surface treatment and have bigger processing space (generally greater than 20 μ m), but conventional bulk dissolved silicon chip technology needs the dense boron diffusion of long-time high temperature, this will bring bigger stress influence to device and make the malformation of device, performance reduces, conventional bulk dissolved silicon chip technology also needs with special equipment chip to be carried out attenuate and glossing in addition, this will make the processed finished products rate reduce greatly, and conventional bulk dissolved silicon chip technology also needs the poisonous wet corrosion technique that is pernicious to people, so there are many shortcomings in conventional bulk dissolved silicon chip technology.In order to overcome these shortcomings, invented SOI (silicon-oxide layer-conductive coating structure) technology afterwards again, this technology makes the stress, the longitudinal size that occur in micromachined shortcoming little, the uniformity difference obtain fine solution, but the SOI technology also has deficiency, as when making to environment purification requirement harshness, and need high-temperature process.
Summary of the invention
The objective of the invention is to avoid the weak point in the above-mentioned background technology and a kind of a kind of Dry Method Silicon-aluminium-Silicon Structure micromechanical Processing Method that adopts dual surface lithography, deep reaction ion etching and silicon-aluminium-silicon bonding technology is provided, the present invention has not only overcome the above-mentioned shortcoming of LIGA technology, body dissolved silicon chip technology, surface treatment, SOI, characteristics such as low cost of manufacture, manufacture craft are simple, yield rate height that it also has.
The object of the present invention is achieved like this, and it adopts twin polishing p type single crystal silicon sheet 1 and twin polishing n type single crystal silicon sheet 2 is substrate, and it also comprises the following steps:
1. be coated with one deck photoresist 3 in n type single crystal silicon sheet 2 fronts, form the graphical window of the alignment mark 4 of photoetching micro-structural 9 in n type single crystal silicon sheet 2 fronts with photoetching process;
2. be mask with photoresist 3, the silicon in deep reaction ion etching n type single crystal silicon sheet 2 fronts, the alignment mark 4 of formation micro-structural 9 boils 8 to 10 minutes removal photoresists 3 with sulfuric acid;
3. n type single crystal silicon sheet 2 reverse side are carried out electron beam deposition aluminium lamination 5;
4. be coated with one deck photoresist 6 at n type single crystal silicon sheet 2 reverse side, the photoresist 6 of monocrystalline silicon piece 2 reverse side is carried out the graphical window that dual surface lithography forms bonding platform 7, fall the outer aluminium lamination 5 of bonding platform 7 graphical windows with phosphoric acid corrosion;
5. be mask with photoresist 6 and aluminium lamination 5, the silicon of deep reaction ion etching n type single crystal silicon sheet 2 reverse side is with the ultrasonic removal photoresist 6 of alcohol;
6. n type single crystal silicon sheet 2 reverse side and 1 one sintering of p type single crystal silicon sheet are bonded to silicon-aluminium-silicon structure sheet;
7. be coated with last layer photoresist 8 in n type single crystal silicon sheet 2 fronts of silicon-aluminium-silicon structure sheet, the photoresist 8 in n type single crystal silicon sheet 2 fronts is carried out photoetching, etch the graphical window of micro-structural 9;
8. be mask with photoresist 8, the silicon in deep reaction ion etching n type single crystal silicon sheet 2 fronts forms micro-structural 9, finishes absolutely dry method silicon-aluminium-silicon structure micromachined.
The twin polishing p type single crystal silicon sheet 1 that adopts among the present invention and the thickness of twin polishing n type single crystal silicon sheet 2 are 280 μ m to 320 μ m.
The present invention above-mentioned the 2. in the step degree of depth of the silicon in deep reaction ion etching n type single crystal silicon sheet 2 fronts be 2 μ m to 3 μ m.
The present invention above-mentioned the thickness that 3. n type single crystal silicon sheet 2 reverse side carry out electron beam deposition aluminium lamination 5 in the step is 1 μ m to 3 μ m.
The present invention above-mentioned the 5. in the step degree of depth of the silicon of deep reaction ion etching n type single crystal silicon sheet 2 reverse side be 220 μ m to 250 μ m.
The present invention above-mentioned the 6. in the step n type single crystal silicon sheet 2 reverse side and 1 one sintering bonding temperatures of p type single crystal silicon sheet be 650 ℃ to 700 ℃, vacuum is 0.01Pa to 0.04Pa, the time is 30 minutes.
The present invention above-mentioned the is the silicon in deep reaction ion etching n type single crystal silicon sheet 2 fronts in the step 8., and etching depth is the degree of depth that n type single crystal silicon sheet 2 thickness deduct deep reaction ion etching n type single crystal silicon sheet 2 reverse side silicon.
The present invention compares background technology and has following advantage:
The present invention has adopted dual surface lithography, deep reaction ion etching and silicon-aluminium-silicon bonding manufacture craft, can make low stress, micro-structural that longitudinal size is big, saved in traditional micromachining technology long-time High temperature diffusion, grinding and polishing process and poisonous wet corrosion technique, that the present invention has is cheap for manufacturing cost, low for equipment requirements, operating procedure simple, the yield rate advantages of higher.
Description of drawings
Fig. 1 is the process chart of Dry Method Silicon-aluminium-Silicon Structure micromechanical Processing Method of the present invention.
Among Fig. 1: 1 is the p type single crystal silicon sheet, and 2 is the n type single crystal silicon sheet, and 3,6,8 is photoresist, and 4 is alignment mark, and 5 is aluminium lamination, and 7 is the bonding platform, and 9 is micro-structural.
The specific embodiment
(1) adopt commercially available general twin polishing p type single crystal silicon sheet 1 and twin polishing n type single crystal silicon sheet 2, its thickness is 280 μ m to 320 μ m, and embodiment thickness is 300 μ m, as Fig. 1-1,1-2.
(2) be coated with one deck positivity AZ1450 type photoresist 3 in n type single crystal silicon sheet 2 fronts, photoresist 3 thickness are 2 μ m, as Fig. 1-3.
(3) with commercially available general litho machine the photoresist 3 in n type single crystal silicon sheet 2 fronts is carried out photoetching, at the n type single crystal silicon sheet 2 positive graphical windows that form the alignment mark 4 of micro-structurals 9, as Fig. 1-4.
(4) be mask with photoresist 3, adopt the silicon in general reactive ion etching machine etching N type monocrystalline silicon piece 2 fronts, form the alignment mark 4 of micro-structural 9, etching depth is 2 μ m to 3 μ m, the embodiment etching depth is 2.5 μ m, boils with sulfuric acid and removes photoresist 3 in 8 to 10 minutes, as Fig. 1-5.
(5) adopt commercially available general electron beam evaporation platform that n type single crystal silicon sheet 2 reverse side are carried out deposit aluminium lamination 5, the thickness of aluminium lamination 5 is 1 μ m to 3 μ m, and the thickness of embodiment aluminium lamination 5 is 2 μ m, as Fig. 1-6.
(6) be coated with one deck positivity AZ1450 type photoresist 6 at n type single crystal silicon sheet 2 reverse side, the photoresist 6 of monocrystalline silicon piece 2 reverse side is carried out the graphical window of dual surface lithography formation bonding platform 7 with general double face photoetching machine, fall the outer aluminium lamination 5 of bonding platform 7 graphical windows with phosphoric acid corrosion, the temperature of phosphoric acid corrosion is 65 ℃, 8 minutes time is as Fig. 1-7.
(7) be mask with photoresist 6 and aluminium lamination 5, with the silicon of deep reaction ion etching machine engraving erosion n type single crystal silicon sheet 2 reverse side, etching depth is 220 μ m to 250 μ m, and the embodiment etching depth is 230 μ m, with the ultrasonic removal photoresist 6 of alcohol, Fig. 1-8.
(8) with in the universal vacuum sintering furnace, n type single crystal silicon sheet 2 reverse side and 1 one sintering of p type single crystal silicon sheet are bonded to silicon-aluminium-silicon structure sheet, the sintering bonding temperature is 650 ℃ to 700 ℃, vacuum is 0.01Pa to 0.04Pa, embodiment sintering bonding temperature is 660 ℃, vacuum is 0.03Pa, and the time is 30 minutes, as Fig. 1-9.
(9) be coated with last layer photoresist 8 in n type single crystal silicon sheet 2 fronts of silicon-aluminium-silicon structure sheet, the photoresist 8 in n type single crystal silicon sheet 2 fronts carried out photoetching, etch the graphical window of micro-structural 9, as Fig. 1-10 with litho machine.
(10) be mask with photoresist 8, adopt the silicon in deep reaction ion etching machine engraving erosion n type single crystal silicon sheet 2 fronts, etching depth is the degree of depth that n type single crystal silicon sheet 2 thickness deduct deep reaction ion etching n type single crystal silicon sheet 2 reverse side silicon, form micro-structural 9, finish absolutely dry method silicon-aluminium-silicon structure micromachined, as Fig. 1-11.
Claims (7)
1, a kind of Dry Method Silicon-aluminium-Silicon Structure micromechanical Processing Method, it comprises step: adopting twin polishing p type single crystal silicon sheet (1) and twin polishing n type single crystal silicon sheet (2) is substrate, it is characterized in that it also comprises step:
1. be coated with one deck photoresist (3) in n type single crystal silicon sheet (2) front, at the positive graphical window that forms the alignment mark (4) of photoetching micro-structural (9) with photoetching process of n type single crystal silicon sheet (2);
2. be mask with photoresist (3), the silicon that deep reaction ion etching n type single crystal silicon sheet (2) is positive, the alignment mark (4) of formation micro-structural (9) boils 8 to 10 minutes removal photoresists (3) with sulfuric acid;
3. n type single crystal silicon sheet (2) reverse side is carried out electron beam deposition aluminium lamination (5);
4. be coated with one deck photoresist (6) at n type single crystal silicon sheet (2) reverse side, the photoresist (6) of monocrystalline silicon piece (2) reverse side is carried out the graphical window that dual surface lithography forms bonding platform (7), fall the outer aluminium lamination (5) of bonding platform (7) graphical window with phosphoric acid corrosion;
5. be mask with photoresist (6) and aluminium lamination (5), the silicon of deep reaction ion etching n type single crystal silicon sheet (2) reverse side is with the ultrasonic removal photoresist of alcohol (6);
6. n type single crystal silicon sheet (2) reverse side and (1) sintering of p type single crystal silicon sheet are bonded to silicon-aluminium-silicon structure sheet;
7. be coated with last layer photoresist (8) in n type single crystal silicon sheet (2) front of silicon-aluminium-silicon structure sheet, the photoresist (8) positive to n type single crystal silicon sheet (2) carries out photoetching, etches the graphical window of micro-structural (9);
8. be mask with photoresist (8), the silicon that deep reaction ion etching n type single crystal silicon sheet (2) is positive forms micro-structural (9), finishes absolutely dry method silicon-aluminium-silicon structure micromachined.
2, Dry Method Silicon-aluminium-Silicon Structure micromechanical Processing Method according to claim 1 is characterized in that the thickness of its employing twin polishing p type single crystal silicon sheet (1) and twin polishing n type single crystal silicon sheet (2) is 280 μ m to 320 μ m.
3, Dry Method Silicon-aluminium-Silicon Structure micromechanical Processing Method according to claim 1, it is characterized in that described the 2. in the step the positive silicon degree of depth of deep reaction ion etching n type single crystal silicon sheet (2) be 2 μ m to 3 μ m.
4, Dry Method Silicon-aluminium-Silicon Structure micromechanical Processing Method according to claim 1, it is characterized in that described the 3. in the step thickness of electron beam deposition aluminium lamination (5) be 1 μ m to 3 μ m.
5, Dry Method Silicon-aluminium-Silicon Structure micromechanical Processing Method according to claim 1, it is characterized in that described the 5. in the step degree of depth of deep reaction ion etching n type single crystal silicon sheet (2) reverse side silicon be 220 μ m to 250 μ m.
6, Dry Method Silicon-aluminium-Silicon Structure micromechanical Processing Method according to claim 1, it is characterized in that described the 6. in the step n type single crystal silicon sheet (2) reverse side and (1) sintering bonding temperature of p type single crystal silicon sheet be 650 ℃ to 700 ℃, vacuum is 0.01Pa to 0.04Pa, and the time is 30 minutes.
7, Dry Method Silicon-aluminium-Silicon Structure micromechanical Processing Method according to claim 1, it is characterized in that the described the 8. positive silicon of deep reaction ion etching n type single crystal silicon sheet (2) in the step, etching depth is the degree of depth that the thickness of n type single crystal silicon sheet (2) deducts deep reaction ion etching n type single crystal silicon sheet (2) reverse side silicon.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1325367C (en) * | 2005-09-16 | 2007-07-11 | 中国电子科技集团公司第二十四研究所 | Method for producing MEMS sensor suspension beam structure |
| CN100396595C (en) * | 2005-12-27 | 2008-06-25 | 北京大学 | Method for preparing nanometer suspension arm structure using nanometer embossing and reactive ion etching technology |
| CN102325717B (en) * | 2008-12-23 | 2015-11-25 | 西尔特克特拉有限责任公司 | Produce the method that is thin, free-standing layers of solid with patterned surface |
-
2003
- 2003-12-25 CN CN 200310109717 patent/CN1227153C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1325367C (en) * | 2005-09-16 | 2007-07-11 | 中国电子科技集团公司第二十四研究所 | Method for producing MEMS sensor suspension beam structure |
| CN100396595C (en) * | 2005-12-27 | 2008-06-25 | 北京大学 | Method for preparing nanometer suspension arm structure using nanometer embossing and reactive ion etching technology |
| CN102325717B (en) * | 2008-12-23 | 2015-11-25 | 西尔特克特拉有限责任公司 | Produce the method that is thin, free-standing layers of solid with patterned surface |
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| CN1227153C (en) | 2005-11-16 |
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Assignee: HEBEI LEDE ELECTRONICS Co.,Ltd. Assignor: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY Group Corp. Contract fulfillment period: 2007.11.15 to 2012.11.15 Contract record no.: 2008130000008 Denomination of invention: Silicon-aluminium-silicon structure micro machinery processing method of full dry method Granted publication date: 20051116 License type: Exclusive license Record date: 20081016 |
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