CN100580886C - Gravity liquid state etching method capable of controlling structure size - Google Patents
Gravity liquid state etching method capable of controlling structure size Download PDFInfo
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- CN100580886C CN100580886C CN200510072280A CN200510072280A CN100580886C CN 100580886 C CN100580886 C CN 100580886C CN 200510072280 A CN200510072280 A CN 200510072280A CN 200510072280 A CN200510072280 A CN 200510072280A CN 100580886 C CN100580886 C CN 100580886C
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Abstract
A gravitational liquid-state etching method able to control the structure size is characterized by that the opposite etched slots and the etch-stopping liquid are used to control the size of chip-class microstructure. A group of opposite slots is etched respectively on both surfaces of a chip. The depth of the slot on the surface where the microstructure is positioned is equal to the size of needed microstructure. The slot on its back is not specially defined. When the slots on its back surface is etched to communicate with the slots on its front surface, the chip is separated and then dropped from the etching liquid into an etch-stopping liquid (biiodomethane), so controlling the sizes of microstructure.
Description
Technical field
The present invention relates to a kind of etching and stop technology, the gravity liquid etching that particularly relates to a kind of controllable components microstructure size stops technology.
Background technology
Growing along with science and technology, human research feeler has more and more trended towards microminiaturization, and (Micro-ElectroMechanical System, research and development MEMS) also increases significantly about MEMS (micro electro mechanical system).The micro-structural of being produced with micro electro mechanical system (MEMS) technology comprises microsensor (micro sensor), micro-actuator (micro actuator) and atomic force probe etc., can be applicable to give birth to doctor, space flight, electronics and ring worker every field.
The control of existing micro-structural etching degree, thickness as cantilever or membrane structure, traditionally, the mensuration of etching degree is to utilize microscope or sweep electron microscope (SEM) to watch the image at etched position in artificial mode, judges whether conformance with standard of etched degree.Or measure the etch-rate of the etching solution that uses material and collocation thereof, with as the benchmark that carries out the etching step required time.Right preceding method is to obtain empirical value mostly, as the reference of manufacture craft process.When being difficult to carry out etch structures, effectively control etched thickness.
Desire ACTIVE CONTROL film (suspend membrane) or cantilever (cantilever beam) structural thickness, in present micro electronmechanical technology, be to use implanting ions collocation chemical etching, or cover silicon insulating barrier (Silicon on isolation, SOI) mode is controlled, and is therefore all higher on cost of manufacture and technical difficulty relatively.
Therefore, development is controlled the etching degree for the method for chip manufacturing etched trench, and it is to depict etched trench on every side prior to the assembly for the treatment of the etching chip in advance, is etched to etched trench then and is run through, and assembly is dropped, and assembly is taken out clean again.Whether yet the method needs to observe assembly in the range estimation mode drops, and takes out assembly in real time.And in take out assembly to clean during this period of time in, etching still continues to carry out, and has influence on the precision of assembly.
Summary of the invention
Technical problem to be solved by this invention provides a kind of gravity liquid state etching method of may command physical dimension, whether the solution prior art needs to observe assembly in the range estimation mode and drops, and in take out assembly to clean during this period of time in etching still continue to carry out, and have influence on the technical problem of the precision of assembly.
For achieving the above object, the invention provides a kind of gravity liquid state etching method of may command physical dimension, its characteristics are, comprise following steps: provide a physical dimension etching control liquid, this etching control liquid comprises an etching solution and an etching stop solution, the proportion of this etching stop solution makes this etching solution form an etching region in this etching stop solution top greater than this etching solution, and this etching stop solution of this etching solution below then forms an etch stop region; One substrate is provided, this substrate has first surface and second surface, have at least one THICKNESS CONTROL groove and at least one micro-structural in this first surface, this THICKNESS CONTROL groove is around more than one this micro-structural, this second surface has at least one etched trench corresponding to the position of this THICKNESS CONTROL groove; This substrate is placed this etching region; Carry out etching, make this etched trench of this substrate run through this THICKNESS CONTROL groove, cause this micro-structural to be separated and drop down onto this etch stop region by this substrate.
The gravity liquid state etching method of above-mentioned may command physical dimension, its characteristics are that this substrate material is a silicon substrate.
The gravity liquid state etching method of above-mentioned may command physical dimension, its characteristics are that this etching solution is a potassium hydroxide solution.
The gravity liquid state etching method of above-mentioned may command physical dimension, its characteristics are that this etching stop solution is a diiodomethane solution.
The gravity liquid state etching method of above-mentioned may command physical dimension, its characteristics are that the manufacturing step of this substrate includes: respectively at this first surface and this second surface deposition nitric oxide film with as a hardmask; This hardmask with this first surface of photoetching method patterning; This silicon substrate of etching defines this micro-structural and this etching control groove in this first surface; This hardmask with this second surface of photoetching method patterning; This silicon substrate of etching defines this etched trench in this second surface.
The gravity liquid state etching method of above-mentioned may command physical dimension, its characteristics are that the step of this this silicon substrate of etching is carried out etching with reactive ion etching.
The gravity liquid state etching method of above-mentioned may command physical dimension, its characteristics are, also are contained in the step that this micro-structure surface forms a protective layer.
Technique effect of the present invention is: the gravity liquid state etching method of may command physical dimension of the present invention, be around the micro-structural for the treatment of etching substrates, to make corresponding groove, cooperate etching control liquid simultaneously with etching region and etch stop region, micro-structural can be broken away from when reaching required etch depth automatically, and drop down onto etch stop region.So, can stop the etching of micro-structural automatically, and the degree of depth of THICKNESS CONTROL groove is the desired thickness of micro-structural, effectively finished the automatic control of micro-structural thickness.In addition, the substrate among the present invention can have one or more around the micro-structural that the etching control groove is arranged, and similarly, single etching control groove also can center on a plurality of micro-structurals.
Further describe specific embodiments of the invention below in conjunction with accompanying drawing.
Description of drawings
Figure 1A to Fig. 1 E is the method flow generalized section of the embodiment of the invention;
Fig. 2 is the flow chart of steps of the embodiment of the invention.
Wherein, Reference numeral:
100 silicon substrates
101 first surfaces
102 second surfaces
110 silicon nitride films
111 photoresist layers
120 micro-structurals
130 THICKNESS CONTROL grooves
140 etched trench
150 substrates
200 etching control liquid
210 etching regions
220 etch stop region
Embodiment
The gravity liquid etching of may command physical dimension provided by the invention stops technology, by treat the etching micro-structural around make corresponding etched trench and THICKNESS CONTROL groove, cooperate etching solution simultaneously, control the structural thickness of micro-structural automatically with etching region and etch stop region.
The embodiment of the invention is made the probe cantilever with silicon substrate as substrate, its THICKNESS CONTROL groove and etched trench can utilize photoetching (photolithography) technology, and cooperating the different crystalline lattice face of potassium hydroxide solution at silicon substrate, the characteristic that etch-rate is different forms the groove of taper.For making THICKNESS CONTROL groove and etched trench respectively in the silicon substrate surface, please refer to Figure 1A to Fig. 1 E, it is the method flow generalized section of the embodiment of the invention.
Shown in Figure 1A, elder generation is in the mode of low-pressure chemical vapor deposition (LPCVD), at the first surface 101 of silicon substrate 100 and second surface 102 deposited silicon nitride (Si3N4) film 110 all,, carry out silicon substrate 100 etched hardmasks (hard mask) with as in the subsequent handling.
Then, shown in Figure 1B, mask pattern is transferred on the silicon nitride film 110.Utilize photoetching (photolithography) technology; comprise steps such as photoresistance coating, exposure and etching; silicon nitride film 110 surface coated photoresist layers 111 in first surface 101; expose with mask again, not removed by the silicon nitride film 110 of photoresistance protection with reactive ion etching (RIE) then.
After removing photoresist layer 111 again, shown in Fig. 1 C, be hardmask, utilize the exposed silicon substrate 100 of potassium hydroxide solution (KOH) etching, with the THICKNESS CONTROL groove 130 that defines micro-structural 120 and center on micro-structural 120 with silicon nitride film 110.Micro-structural 120 can comprise parts such as desired thickness cantilever design and probe.In addition, for fear of the influence of subsequent technique, but the protective mulch (not shown) is in micro-structural 120 surfaces.
Similarly; utilize photoetching process; silicon nitride film 110 surface coated photoresist layers in second surface; expose with mask again; not removed by the silicon nitride film of photoresist layer protection with reactive ion etching then; shown in Fig. 1 D; form etched trench 140 in silicon nitride film 110 again; the corresponding etching control groove 130 in the position of its etched trench 140; can finish substrate 150 structures of the embodiment of the invention; substrate 150 has first surface 101 and second surface 102; have THICKNESS CONTROL groove 130 in first surface 101, THICKNESS CONTROL groove 130 is around micro-structural 120, and second surface has etched trench 140; the position of its corresponding THICKNESS CONTROL groove 130 is in order to carry out the engraving method of follow-up may command physical dimension.Yet on the actual fabrication process, because etched trench 140 need not define its degree of depth especially, so also can be directly in follow-up when carrying out the etch process of micro-structural release, etch etched trench 140 earlier, continue again this etched trench 140 of etching to conducting etching control groove 130 so that micro-structural 120 breaks away from silicon substrates 100, finish the etch process of whole may command physical dimension simultaneously.
Shown in Fig. 1 E, etching control liquid 200 comprises etching solution and etching stop solution, and the proportion of etching stop solution makes etching solution form etching region 210 in etching stop solution top greater than etching solution, and the etching stop solution of etching solution below then forms etch stop region 220.Therefore substrate 150 is placed etching region 210, make the etched trench 140 of substrate 150 run through this THICKNESS CONTROL groove 130 through etching, cause micro-structural 120 to be separated and fall to etch stop region 220 by etching region 210 by substrate 150, and stop the etching of micro-structural 120 automatically, and the degree of depth of THICKNESS CONTROL groove 130 is the desired thickness of micro-structural 120.
Above-mentioned etching solution for example is potassium hydroxide (potassium hydroxide; KOH); And above-mentioned etching stop solution for example is diiodomethane (Diiodomethane; CH2I2).
The engraving method of the may command physical dimension that the embodiment of the invention discloses please refer to Fig. 2, and it is the flow chart of steps of the embodiment of the invention, and step includes: step 210 provides etching control liquid, and it comprises the etch stop region of etching region and below thereof; Step 220 provides substrate, and it has corresponding THICKNESS CONTROL groove and etched trench; Step 230 places etching region with substrate; Step 240 is carried out etching, makes the etched trench of substrate run through the THICKNESS CONTROL groove, causes micro-structural to drop down onto etch stop region by the substrate separation.
The above is preferred embodiment of the present invention only, is not to be used for limiting practical range of the present invention; Every according to equivalence variation and modification that the present invention did, all contained by claim of the present invention.
Claims (7)
1, a kind of gravity liquid state etching method of may command physical dimension is characterized in that, comprises following steps:
One physical dimension etching control liquid is provided, this etching control liquid comprises an etching solution and an etching stop solution, the proportion of this etching stop solution is greater than this etching solution, make this etching solution form an etching region in this etching stop solution top, this etching stop solution of this etching solution below then forms an etch stop region;
One substrate is provided, this substrate has first surface and second surface, have at least one THICKNESS CONTROL groove and at least one micro-structural in this first surface, this THICKNESS CONTROL groove is around more than one this micro-structural, this second surface has at least one etched trench corresponding to the position of this THICKNESS CONTROL groove;
This substrate is placed this etching region; And
Carry out etching, make this etched trench of this substrate run through this THICKNESS CONTROL groove, cause this micro-structural to be separated and drop down onto this etch stop region by this substrate.
2, the gravity liquid state etching method of may command physical dimension according to claim 1 is characterized in that, this substrate material is a silicon substrate.
3, the gravity liquid state etching method of may command physical dimension according to claim 2 is characterized in that, this etching solution is a potassium hydroxide solution.
4, the gravity liquid state etching method of may command physical dimension according to claim 3 is characterized in that, this etching stop solution is a diiodomethane solution.
5, the gravity liquid state etching method of may command physical dimension according to claim 2 is characterized in that, the manufacturing step of this substrate includes:
Respectively at this first surface and this second surface deposition nitric oxide film with as a hardmask;
This hardmask with this first surface of photoetching method patterning;
This silicon substrate of etching defines this micro-structural and this etching control groove in this first surface;
This hardmask with this second surface of photoetching method patterning; And
This silicon substrate of etching defines this etched trench in this second surface.
6, the gravity liquid state etching method of may command physical dimension according to claim 5 is characterized in that, the step of this this silicon substrate of etching is carried out etching with reactive ion etching.
7, the gravity liquid state etching method of may command physical dimension according to claim 5 is characterized in that, also is contained in the step that this micro-structure surface forms a protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510072280A CN100580886C (en) | 2005-05-27 | 2005-05-27 | Gravity liquid state etching method capable of controlling structure size |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200510072280A CN100580886C (en) | 2005-05-27 | 2005-05-27 | Gravity liquid state etching method capable of controlling structure size |
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| CN1868862A CN1868862A (en) | 2006-11-29 |
| CN100580886C true CN100580886C (en) | 2010-01-13 |
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| CN200510072280A Expired - Fee Related CN100580886C (en) | 2005-05-27 | 2005-05-27 | Gravity liquid state etching method capable of controlling structure size |
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