CN1213081A - 电子器件及为电子器件形成膜的方法 - Google Patents

电子器件及为电子器件形成膜的方法 Download PDF

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Publication number
CN1213081A
CN1213081A CN98116373A CN98116373A CN1213081A CN 1213081 A CN1213081 A CN 1213081A CN 98116373 A CN98116373 A CN 98116373A CN 98116373 A CN98116373 A CN 98116373A CN 1213081 A CN1213081 A CN 1213081A
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CN
China
Prior art keywords
semiconductor substrate
substrate
layer
electronic device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN98116373A
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English (en)
Chinese (zh)
Inventor
让－保罗·吉莱迈特
米利亚姆·库贝
斯特凡·阿斯迪耶
伊马努埃尔·水德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Freescale Semiconducteurs France SAS
Original Assignee
Motorola Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA
Publication of CN1213081A publication Critical patent/CN1213081A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Measuring Fluid Pressure (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
CN98116373A 1997-07-25 1998-07-24 电子器件及为电子器件形成膜的方法 Pending CN1213081A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP97401796.4 1997-07-25
EP97401796A EP0893827B1 (en) 1997-07-25 1997-07-25 Electronic device and method for forming a membrane for an electronic device
US09/120,755 US6022754A (en) 1997-07-25 1998-07-22 Electronic device and method for forming a membrane for an electronic device

Publications (1)

Publication Number Publication Date
CN1213081A true CN1213081A (zh) 1999-04-07

Family

ID=26147864

Family Applications (1)

Application Number Title Priority Date Filing Date
CN98116373A Pending CN1213081A (zh) 1997-07-25 1998-07-24 电子器件及为电子器件形成膜的方法

Country Status (4)

Country Link
US (1) US6022754A (https=)
EP (1) EP0893827B1 (https=)
JP (1) JP4271751B2 (https=)
CN (1) CN1213081A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102354659A (zh) * 2011-11-02 2012-02-15 上海宏力半导体制造有限公司 掩膜成核消除方法以及选择性外延生长方法
CN110797255A (zh) * 2019-10-14 2020-02-14 长江存储科技有限责任公司 薄膜堆叠结构、三维存储器及其制备方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19817311B4 (de) * 1998-04-18 2007-03-22 Robert Bosch Gmbh Herstellungsverfahren für mikromechanisches Bauelement
US6387724B1 (en) * 1999-02-26 2002-05-14 Dynamics Research Corporation Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface
JP4513161B2 (ja) * 2000-03-31 2010-07-28 東亞合成株式会社 ガスセンサの製造方法及びガスセンサ
US6468897B1 (en) * 2001-05-23 2002-10-22 Macronix International Co., Ltd. Method of forming damascene structure
AU2006351677B2 (en) 2006-12-14 2011-03-10 Ito En, Ltd. Process for producing tea drink
US9354197B2 (en) * 2013-04-25 2016-05-31 Wisenstech Ltd. Micromachined oxygen sensor and method of making the same
KR101616959B1 (ko) * 2013-07-02 2016-04-29 전자부품연구원 Fet 이온센서 및 이를 이용한 시스템
KR102142885B1 (ko) * 2013-10-14 2020-08-10 한국전자통신연구원 어레이형 광검출기를 제조하는 방법
CN103606565B (zh) * 2013-11-27 2016-05-11 苏州科技学院 压力传感器敏感元件的制造工艺
WO2017205146A1 (en) * 2016-05-27 2017-11-30 Carrier Corporation Gas detection device and method of manufacturing the same
FR3079616B1 (fr) * 2018-03-30 2021-02-12 Soitec Silicon On Insulator Micro-capteur pour detecter des especes chimiques et procede de fabrication associe

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706493A (en) * 1985-12-13 1987-11-17 General Motors Corporation Semiconductor gas sensor having thermally isolated site
FR2615287B1 (fr) * 1987-05-12 1989-10-06 Suisse Electronique Microtech Micro-capteur a technologie integree pour la detection de la presence de certains gaz
JP2582343B2 (ja) * 1993-12-04 1997-02-19 エルジー電子株式会社 低消費電力型薄膜ガスセンサ及びその製造方法
US5635628A (en) * 1995-05-19 1997-06-03 Siemens Aktiengesellschaft Method for detecting methane in a gas mixture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102354659A (zh) * 2011-11-02 2012-02-15 上海宏力半导体制造有限公司 掩膜成核消除方法以及选择性外延生长方法
CN102354659B (zh) * 2011-11-02 2016-05-11 上海华虹宏力半导体制造有限公司 掩膜成核消除方法以及选择性外延生长方法
CN110797255A (zh) * 2019-10-14 2020-02-14 长江存储科技有限责任公司 薄膜堆叠结构、三维存储器及其制备方法

Also Published As

Publication number Publication date
JPH11166866A (ja) 1999-06-22
EP0893827A1 (en) 1999-01-27
JP4271751B2 (ja) 2009-06-03
EP0893827B1 (en) 2004-05-06
US6022754A (en) 2000-02-08

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