CN1211822A - 用于半导体存储器元件的熔丝装置 - Google Patents
用于半导体存储器元件的熔丝装置 Download PDFInfo
- Publication number
- CN1211822A CN1211822A CN98116946A CN98116946A CN1211822A CN 1211822 A CN1211822 A CN 1211822A CN 98116946 A CN98116946 A CN 98116946A CN 98116946 A CN98116946 A CN 98116946A CN 1211822 A CN1211822 A CN 1211822A
- Authority
- CN
- China
- Prior art keywords
- fuse
- fuses
- equipment
- semiconductor
- planes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 7
- 230000004913 activation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19737611.8 | 1997-08-28 | ||
DE19737611A DE19737611C2 (de) | 1997-08-28 | 1997-08-28 | Fuse-Anordnung für Halbleiterspeichervorrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1211822A true CN1211822A (zh) | 1999-03-24 |
CN1134842C CN1134842C (zh) | 2004-01-14 |
Family
ID=7840515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981169465A Expired - Fee Related CN1134842C (zh) | 1997-08-28 | 1998-08-28 | 用于半导体存储器元件的熔丝装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6180992B1 (zh) |
EP (1) | EP0899745A3 (zh) |
JP (1) | JP3728111B2 (zh) |
KR (1) | KR100286050B1 (zh) |
CN (1) | CN1134842C (zh) |
DE (1) | DE19737611C2 (zh) |
TW (1) | TW385448B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19946495C2 (de) * | 1999-09-28 | 2002-10-24 | Infineon Technologies Ag | Verfahren zur Verringerung der Anzahl der Pads auf einem Halbleiterchip |
KR100399411B1 (ko) * | 2001-03-09 | 2003-09-26 | 삼성전자주식회사 | 내장형 메모리 및 이 메모리의 퓨즈 배치 방법 |
US6700096B2 (en) * | 2001-10-30 | 2004-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment |
US7105048B2 (en) * | 2001-11-30 | 2006-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
US20040247013A1 (en) * | 2003-05-14 | 2004-12-09 | Clark Daniel P. | Calibration device for a dental furnace |
US7154396B2 (en) * | 2004-12-30 | 2006-12-26 | Nokia Corporation | Ultra wideband radio frequency identification techniques |
US7983024B2 (en) * | 2007-04-24 | 2011-07-19 | Littelfuse, Inc. | Fuse card system for automotive circuit protection |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3863231A (en) * | 1973-07-23 | 1975-01-28 | Nat Res Dev | Read only memory with annular fuse links |
JPS58219748A (ja) * | 1982-06-15 | 1983-12-21 | Toshiba Corp | 半導体装置 |
US4454002A (en) * | 1983-09-19 | 1984-06-12 | Harris Corporation | Controlled thermal-oxidation thinning of polycrystalline silicon |
JPS60127598A (ja) * | 1983-12-14 | 1985-07-08 | Toshiba Corp | 半導体集積回路装置 |
US5545904A (en) * | 1986-01-17 | 1996-08-13 | Quick Technologies Ltd. | Personalizable gate array devices |
JPS63278250A (ja) * | 1987-05-11 | 1988-11-15 | Toshiba Corp | 半導体装置 |
US4872140A (en) * | 1987-05-19 | 1989-10-03 | Gazelle Microcircuits, Inc. | Laser programmable memory array |
US5159661A (en) * | 1990-10-05 | 1992-10-27 | Energy Conversion Devices, Inc. | Vertically interconnected parallel distributed processor |
US5244836A (en) * | 1991-12-30 | 1993-09-14 | North American Philips Corporation | Method of manufacturing fusible links in semiconductor devices |
-
1997
- 1997-08-28 DE DE19737611A patent/DE19737611C2/de not_active Expired - Fee Related
-
1998
- 1998-08-13 EP EP98115324A patent/EP0899745A3/de not_active Withdrawn
- 1998-08-14 TW TW087113412A patent/TW385448B/zh not_active IP Right Cessation
- 1998-08-26 KR KR1019980034543A patent/KR100286050B1/ko not_active IP Right Cessation
- 1998-08-27 JP JP24154298A patent/JP3728111B2/ja not_active Expired - Fee Related
- 1998-08-28 CN CNB981169465A patent/CN1134842C/zh not_active Expired - Fee Related
- 1998-08-28 US US09/143,122 patent/US6180992B1/en not_active Expired - Lifetime
-
2000
- 2000-12-04 US US09/729,068 patent/US6274410B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE19737611A1 (de) | 1999-03-04 |
EP0899745A3 (de) | 1999-10-06 |
DE19737611C2 (de) | 2002-09-26 |
KR100286050B1 (ko) | 2001-04-16 |
US6274410B2 (en) | 2001-08-14 |
TW385448B (en) | 2000-03-21 |
US20010000758A1 (en) | 2001-05-03 |
EP0899745A2 (de) | 1999-03-03 |
JPH11150239A (ja) | 1999-06-02 |
JP3728111B2 (ja) | 2005-12-21 |
KR19990023867A (ko) | 1999-03-25 |
US6180992B1 (en) | 2001-01-30 |
CN1134842C (zh) | 2004-01-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: SIEMENS AKTIENGESELLSCHAFT Effective date: 20130217 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130217 Address after: German Neubiberg Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: Siemens AG Effective date of registration: 20130217 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: German Neubiberg Patentee before: Infineon Technologies AG |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151223 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040114 Termination date: 20160828 |
|
CF01 | Termination of patent right due to non-payment of annual fee |