CN120981892A - 基板处理方法和基板处理装置 - Google Patents

基板处理方法和基板处理装置

Info

Publication number
CN120981892A
CN120981892A CN202480021449.8A CN202480021449A CN120981892A CN 120981892 A CN120981892 A CN 120981892A CN 202480021449 A CN202480021449 A CN 202480021449A CN 120981892 A CN120981892 A CN 120981892A
Authority
CN
China
Prior art keywords
substrate
irradiation point
processing
main surface
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480021449.8A
Other languages
English (en)
Chinese (zh)
Inventor
早川晋
井上英幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN120981892A publication Critical patent/CN120981892A/zh
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046—Automatically focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
CN202480021449.8A 2023-04-07 2024-03-29 基板处理方法和基板处理装置 Pending CN120981892A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-062771 2023-04-07
JP2023062771 2023-04-07
PCT/JP2024/012955 WO2024210048A1 (ja) 2023-04-07 2024-03-29 基板処理方法および基板処理装置

Publications (1)

Publication Number Publication Date
CN120981892A true CN120981892A (zh) 2025-11-18

Family

ID=92971712

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480021449.8A Pending CN120981892A (zh) 2023-04-07 2024-03-29 基板处理方法和基板处理装置

Country Status (5)

Country Link
JP (1) JPWO2024210048A1 (https=)
KR (1) KR20250174051A (https=)
CN (1) CN120981892A (https=)
TW (1) TW202442353A (https=)
WO (1) WO2024210048A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4986664A (en) * 1984-02-07 1991-01-22 International Technical Associates System and process for controlled removal of material to produce a desired surface contour
US5953578A (en) * 1998-09-08 1999-09-14 Winbond Electronics Corp. Global planarization method using plasma etching
JP3943869B2 (ja) 2000-06-29 2007-07-11 信越半導体株式会社 半導体ウエーハの加工方法および半導体ウエーハ
JP6849382B2 (ja) * 2016-10-17 2021-03-24 矢崎総業株式会社 レーザ加工方法及びレーザ加工装置
US20220184743A1 (en) * 2019-04-05 2022-06-16 Tokyo Electron Limited Substrate processing system and substrate processing method
WO2022054611A1 (ja) * 2020-09-09 2022-03-17 東京エレクトロン株式会社 レーザー加工装置、及びレーザー加工方法
TWI903014B (zh) * 2021-01-21 2025-11-01 日商東京威力科創股份有限公司 基板加工方法及基板加工裝置
JP7596191B2 (ja) * 2021-03-24 2024-12-09 株式会社東京精密 シリコンウエハの表面改質方法
JP7798582B2 (ja) * 2022-01-18 2026-01-14 株式会社東京精密 半導体ウエハ表面の平坦化装置

Also Published As

Publication number Publication date
JPWO2024210048A1 (https=) 2024-10-10
TW202442353A (zh) 2024-11-01
WO2024210048A1 (ja) 2024-10-10
KR20250174051A (ko) 2025-12-11

Similar Documents

Publication Publication Date Title
US9649775B2 (en) Workpiece dividing method
JP7765158B2 (ja) レーザー加工装置、及びレーザー加工方法
TWI903014B (zh) 基板加工方法及基板加工裝置
JP7118245B2 (ja) 基板処理システム、および基板処理方法
JP6152013B2 (ja) ウェーハの加工方法
WO2024210026A1 (ja) 基板処理方法および基板処理装置
CN120981892A (zh) 基板处理方法和基板处理装置
CN120981893A (zh) 基板处理方法和基板处理装置
JP5442801B2 (ja) 半導体切断装置および半導体切断方法
JP4868950B2 (ja) 半導体装置切断システムおよび半導体装置切断方法
JP7650587B2 (ja) ウェーハの加工方法
WO2025258398A1 (ja) 基板処理方法および基板処理装置
WO2025047207A1 (ja) 基板処理方法および基板処理システム
US20260008133A1 (en) Wafer manufacturing method, laser processing apparatus, and wafer manufacturing apparatus
TW202604664A (zh) 雷射加工裝置及雷射加工方法
JP7656797B2 (ja) レーザ加工方法及び装置
WO2024018854A1 (ja) 基板処理方法、基板処理装置および研削装置
JP2023032215A (ja) 加工方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination