KR20250174051A - 기판 처리 방법 및 기판 처리 장치 - Google Patents

기판 처리 방법 및 기판 처리 장치

Info

Publication number
KR20250174051A
KR20250174051A KR1020257037012A KR20257037012A KR20250174051A KR 20250174051 A KR20250174051 A KR 20250174051A KR 1020257037012 A KR1020257037012 A KR 1020257037012A KR 20257037012 A KR20257037012 A KR 20257037012A KR 20250174051 A KR20250174051 A KR 20250174051A
Authority
KR
South Korea
Prior art keywords
processing
substrate
point
main surface
irradiation point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257037012A
Other languages
English (en)
Korean (ko)
Inventor
스스무 하야카와
히데유키 이노우에
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20250174051A publication Critical patent/KR20250174051A/ko
Pending legal-status Critical Current

Links

Classifications

    • H01L21/304—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046—Automatically focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • H01L22/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
KR1020257037012A 2023-04-07 2024-03-29 기판 처리 방법 및 기판 처리 장치 Pending KR20250174051A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2023-062771 2023-04-07
JP2023062771 2023-04-07
PCT/JP2024/012955 WO2024210048A1 (ja) 2023-04-07 2024-03-29 基板処理方法および基板処理装置

Publications (1)

Publication Number Publication Date
KR20250174051A true KR20250174051A (ko) 2025-12-11

Family

ID=92971712

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257037012A Pending KR20250174051A (ko) 2023-04-07 2024-03-29 기판 처리 방법 및 기판 처리 장치

Country Status (5)

Country Link
JP (1) JPWO2024210048A1 (https=)
KR (1) KR20250174051A (https=)
CN (1) CN120981892A (https=)
TW (1) TW202442353A (https=)
WO (1) WO2024210048A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203823A (ja) 2000-06-29 2002-07-19 Shin Etsu Handotai Co Ltd 半導体ウエーハの加工方法および半導体ウエーハ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4986664A (en) * 1984-02-07 1991-01-22 International Technical Associates System and process for controlled removal of material to produce a desired surface contour
US5953578A (en) * 1998-09-08 1999-09-14 Winbond Electronics Corp. Global planarization method using plasma etching
JP6849382B2 (ja) * 2016-10-17 2021-03-24 矢崎総業株式会社 レーザ加工方法及びレーザ加工装置
US20220184743A1 (en) * 2019-04-05 2022-06-16 Tokyo Electron Limited Substrate processing system and substrate processing method
WO2022054611A1 (ja) * 2020-09-09 2022-03-17 東京エレクトロン株式会社 レーザー加工装置、及びレーザー加工方法
TWI903014B (zh) * 2021-01-21 2025-11-01 日商東京威力科創股份有限公司 基板加工方法及基板加工裝置
JP7596191B2 (ja) * 2021-03-24 2024-12-09 株式会社東京精密 シリコンウエハの表面改質方法
JP7798582B2 (ja) * 2022-01-18 2026-01-14 株式会社東京精密 半導体ウエハ表面の平坦化装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203823A (ja) 2000-06-29 2002-07-19 Shin Etsu Handotai Co Ltd 半導体ウエーハの加工方法および半導体ウエーハ

Also Published As

Publication number Publication date
JPWO2024210048A1 (https=) 2024-10-10
TW202442353A (zh) 2024-11-01
WO2024210048A1 (ja) 2024-10-10
CN120981892A (zh) 2025-11-18

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