CN120958553A - 半导体基板以及半导体基板的制造方法 - Google Patents
半导体基板以及半导体基板的制造方法Info
- Publication number
- CN120958553A CN120958553A CN202480020914.6A CN202480020914A CN120958553A CN 120958553 A CN120958553 A CN 120958553A CN 202480020914 A CN202480020914 A CN 202480020914A CN 120958553 A CN120958553 A CN 120958553A
- Authority
- CN
- China
- Prior art keywords
- region
- semiconductor
- substrate
- semiconductor substrate
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2023/012079 WO2024201629A1 (ja) | 2023-03-27 | 2023-03-27 | 半導体成長用テンプレート基板、半導体基板、半導体成長用テンプレート基板の製造方法および製造装置、並びに半導体基板の製造方法および製造装置 |
| JPPCT/JP2023/012079 | 2023-03-27 | ||
| PCT/JP2024/012324 WO2024204391A1 (ja) | 2023-03-27 | 2024-03-27 | 半導体基板、および半導体基板の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN120958553A true CN120958553A (zh) | 2025-11-14 |
Family
ID=92904187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202480020914.6A Pending CN120958553A (zh) | 2023-03-27 | 2024-03-27 | 半导体基板以及半导体基板的制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2024204391A1 (https=) |
| CN (1) | CN120958553A (https=) |
| WO (2) | WO2024201629A1 (https=) |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3139445B2 (ja) * | 1997-03-13 | 2001-02-26 | 日本電気株式会社 | ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜 |
| JP2000077336A (ja) * | 1998-08-28 | 2000-03-14 | Sony Corp | 半導体成長用基板およびその製造方法ならびに半導体装置 |
| JP3791246B2 (ja) * | 1999-06-15 | 2006-06-28 | 日亜化学工業株式会社 | 窒化物半導体の成長方法、及びそれを用いた窒化物半導体素子の製造方法、窒化物半導体レーザ素子の製造方法 |
| JP2002100579A (ja) * | 2000-07-17 | 2002-04-05 | Nichia Chem Ind Ltd | 窒化物半導体基板及びその製造方法 |
| JP3705142B2 (ja) * | 2001-03-27 | 2005-10-12 | ソニー株式会社 | 窒化物半導体素子及びその作製方法 |
| JP4092927B2 (ja) * | 2002-02-28 | 2008-05-28 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体基板の製造方法 |
| JP4747319B2 (ja) * | 2004-03-23 | 2011-08-17 | 学校法人 名城大学 | ヘテロエピタキシャル成長方法 |
| JPWO2005106977A1 (ja) * | 2004-04-27 | 2008-03-21 | 松下電器産業株式会社 | 窒化物半導体素子およびその製造方法 |
| JP2009177168A (ja) * | 2007-12-28 | 2009-08-06 | Sumitomo Chemical Co Ltd | 半導体基板、半導体基板の製造方法および電子デバイス |
| KR20100123680A (ko) * | 2008-03-01 | 2010-11-24 | 스미또모 가가꾸 가부시키가이샤 | 반도체 기판, 반도체 기판의 제조방법 및 전자 디바이스 |
| JP6120204B2 (ja) * | 2012-09-06 | 2017-04-26 | パナソニック株式会社 | エピタキシャルウェハ及びその製造方法、紫外発光デバイス |
| WO2017159682A1 (ja) * | 2016-03-18 | 2017-09-21 | 三菱電機株式会社 | 半導体装置および半導体装置を生産する方法 |
| WO2019191760A1 (en) * | 2018-03-30 | 2019-10-03 | The Regents Of The University Of California | Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth |
| US20240234141A9 (en) * | 2021-02-26 | 2024-07-11 | Kyocera Corporation | Semiconductor substrate, method for manufacturing the same, apparatus for manufacturing the same, and template substrate |
| JP7779906B2 (ja) * | 2021-04-16 | 2025-12-03 | 京セラ株式会社 | 半導体基板並びにその製造方法および製造装置、ＧａＮ系結晶体、半導体デバイス、電子機器 |
| US12463033B2 (en) * | 2022-10-19 | 2025-11-04 | Kyocera Corporation | Semiconductor substrate, and manufacturing method and manufacturing apparatus of semiconductor substrate |
-
2023
- 2023-03-27 WO PCT/JP2023/012079 patent/WO2024201629A1/ja not_active Ceased
-
2024
- 2024-03-27 CN CN202480020914.6A patent/CN120958553A/zh active Pending
- 2024-03-27 WO PCT/JP2024/012324 patent/WO2024204391A1/ja not_active Ceased
- 2024-03-27 JP JP2025511048A patent/JPWO2024204391A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024201629A1 (ja) | 2024-10-03 |
| JPWO2024204391A1 (https=) | 2024-10-03 |
| WO2024204391A1 (ja) | 2024-10-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |