CN120958553A - 半导体基板以及半导体基板的制造方法 - Google Patents

半导体基板以及半导体基板的制造方法

Info

Publication number
CN120958553A
CN120958553A CN202480020914.6A CN202480020914A CN120958553A CN 120958553 A CN120958553 A CN 120958553A CN 202480020914 A CN202480020914 A CN 202480020914A CN 120958553 A CN120958553 A CN 120958553A
Authority
CN
China
Prior art keywords
region
semiconductor
substrate
semiconductor substrate
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480020914.6A
Other languages
English (en)
Chinese (zh)
Inventor
神川刚
须田升
山下文雄
青木优太
清田满成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of CN120958553A publication Critical patent/CN120958553A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
CN202480020914.6A 2023-03-27 2024-03-27 半导体基板以及半导体基板的制造方法 Pending CN120958553A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2023/012079 2023-03-27
PCT/JP2023/012079 WO2024201629A1 (ja) 2023-03-27 2023-03-27 半導体成長用テンプレート基板、半導体基板、半導体成長用テンプレート基板の製造方法および製造装置、並びに半導体基板の製造方法および製造装置
PCT/JP2024/012324 WO2024204391A1 (ja) 2023-03-27 2024-03-27 半導体基板、および半導体基板の製造方法

Publications (1)

Publication Number Publication Date
CN120958553A true CN120958553A (zh) 2025-11-14

Family

ID=92904187

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480020914.6A Pending CN120958553A (zh) 2023-03-27 2024-03-27 半导体基板以及半导体基板的制造方法

Country Status (3)

Country Link
JP (1) JPWO2024204391A1 (https=)
CN (1) CN120958553A (https=)
WO (2) WO2024201629A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026083212A1 (ja) * 2024-10-18 2026-04-23 株式会社半導体エネルギー研究所 半導体膜の形成方法、及び半導体装置の作製方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3139445B2 (ja) * 1997-03-13 2001-02-26 日本電気株式会社 ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜
JP2000077336A (ja) * 1998-08-28 2000-03-14 Sony Corp 半導体成長用基板およびその製造方法ならびに半導体装置
JP3791246B2 (ja) * 1999-06-15 2006-06-28 日亜化学工業株式会社 窒化物半導体の成長方法、及びそれを用いた窒化物半導体素子の製造方法、窒化物半導体レーザ素子の製造方法
JP2002100579A (ja) * 2000-07-17 2002-04-05 Nichia Chem Ind Ltd 窒化物半導体基板及びその製造方法
JP3705142B2 (ja) * 2001-03-27 2005-10-12 ソニー株式会社 窒化物半導体素子及びその作製方法
JP4092927B2 (ja) * 2002-02-28 2008-05-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体基板の製造方法
JP4747319B2 (ja) * 2004-03-23 2011-08-17 学校法人 名城大学 ヘテロエピタキシャル成長方法
WO2005106977A1 (ja) * 2004-04-27 2005-11-10 Matsushita Electric Industrial Co., Ltd. 窒化物半導体素子およびその製造方法
KR20100096084A (ko) * 2007-12-28 2010-09-01 스미또모 가가꾸 가부시키가이샤 반도체 기판, 반도체 기판의 제조 방법 및 전자 디바이스
CN101952937B (zh) * 2008-03-01 2012-11-07 住友化学株式会社 半导体基板、半导体基板的制造方法及电子装置
JP6120204B2 (ja) * 2012-09-06 2017-04-26 パナソニック株式会社 エピタキシャルウェハ及びその製造方法、紫外発光デバイス
JP6407475B2 (ja) * 2016-03-18 2018-10-17 三菱電機株式会社 半導体装置および半導体装置を生産する方法
WO2019191760A1 (en) * 2018-03-30 2019-10-03 The Regents Of The University Of California Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth
WO2022181686A1 (ja) * 2021-02-26 2022-09-01 京セラ株式会社 半導体基板並びにその製造方法および製造装置、テンプレート基板
US20240191391A1 (en) * 2021-04-16 2024-06-13 Kyocera Corporation SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREFOR, GaN-BASED CRYSTAL BODY, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
US12463033B2 (en) * 2022-10-19 2025-11-04 Kyocera Corporation Semiconductor substrate, and manufacturing method and manufacturing apparatus of semiconductor substrate

Also Published As

Publication number Publication date
WO2024204391A1 (ja) 2024-10-03
JPWO2024204391A1 (https=) 2024-10-03
WO2024201629A1 (ja) 2024-10-03

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