CN120937529A - 半导体装置 - Google Patents
半导体装置Info
- Publication number
- CN120937529A CN120937529A CN202480020679.2A CN202480020679A CN120937529A CN 120937529 A CN120937529 A CN 120937529A CN 202480020679 A CN202480020679 A CN 202480020679A CN 120937529 A CN120937529 A CN 120937529A
- Authority
- CN
- China
- Prior art keywords
- electrode
- region
- film
- trench
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-056390 | 2023-03-30 | ||
| JP2023056390 | 2023-03-30 | ||
| PCT/JP2024/008809 WO2024203121A1 (ja) | 2023-03-30 | 2024-03-07 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN120937529A true CN120937529A (zh) | 2025-11-11 |
Family
ID=92905480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202480020679.2A Pending CN120937529A (zh) | 2023-03-30 | 2024-03-07 | 半导体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20260011660A1 (https=) |
| JP (1) | JPWO2024203121A1 (https=) |
| CN (1) | CN120937529A (https=) |
| WO (1) | WO2024203121A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5205856B2 (ja) * | 2007-01-11 | 2013-06-05 | 富士電機株式会社 | 電力用半導体素子 |
| JP5509908B2 (ja) * | 2010-02-19 | 2014-06-04 | 富士電機株式会社 | 半導体装置およびその製造方法 |
| JP2013149761A (ja) * | 2012-01-18 | 2013-08-01 | Fuji Electric Co Ltd | 半導体装置 |
| CN104170090B (zh) * | 2012-03-22 | 2017-02-22 | 丰田自动车株式会社 | 半导体装置 |
| JP6107156B2 (ja) * | 2012-05-21 | 2017-04-05 | 富士電機株式会社 | 半導体装置 |
-
2024
- 2024-03-07 CN CN202480020679.2A patent/CN120937529A/zh active Pending
- 2024-03-07 JP JP2025510174A patent/JPWO2024203121A1/ja active Pending
- 2024-03-07 WO PCT/JP2024/008809 patent/WO2024203121A1/ja not_active Ceased
-
2025
- 2025-09-19 US US19/333,352 patent/US20260011660A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024203121A1 (ja) | 2024-10-03 |
| JPWO2024203121A1 (https=) | 2024-10-03 |
| US20260011660A1 (en) | 2026-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |