JPWO2024203121A1 - - Google Patents

Info

Publication number
JPWO2024203121A1
JPWO2024203121A1 JP2025510174A JP2025510174A JPWO2024203121A1 JP WO2024203121 A1 JPWO2024203121 A1 JP WO2024203121A1 JP 2025510174 A JP2025510174 A JP 2025510174A JP 2025510174 A JP2025510174 A JP 2025510174A JP WO2024203121 A1 JPWO2024203121 A1 JP WO2024203121A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025510174A
Other languages
Japanese (ja)
Other versions
JPWO2024203121A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024203121A1 publication Critical patent/JPWO2024203121A1/ja
Publication of JPWO2024203121A5 publication Critical patent/JPWO2024203121A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411Insulated-gate bipolar transistors [IGBT]
    • H10D12/441Vertical IGBTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
JP2025510174A 2023-03-30 2024-03-07 Pending JPWO2024203121A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023056390 2023-03-30
PCT/JP2024/008809 WO2024203121A1 (ja) 2023-03-30 2024-03-07 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024203121A1 true JPWO2024203121A1 (https=) 2024-10-03
JPWO2024203121A5 JPWO2024203121A5 (https=) 2025-12-26

Family

ID=92905480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025510174A Pending JPWO2024203121A1 (https=) 2023-03-30 2024-03-07

Country Status (4)

Country Link
US (1) US20260011660A1 (https=)
JP (1) JPWO2024203121A1 (https=)
CN (1) CN120937529A (https=)
WO (1) WO2024203121A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5205856B2 (ja) * 2007-01-11 2013-06-05 富士電機株式会社 電力用半導体素子
JP5509908B2 (ja) * 2010-02-19 2014-06-04 富士電機株式会社 半導体装置およびその製造方法
JP2013149761A (ja) * 2012-01-18 2013-08-01 Fuji Electric Co Ltd 半導体装置
CN104170090B (zh) * 2012-03-22 2017-02-22 丰田自动车株式会社 半导体装置
JP6107156B2 (ja) * 2012-05-21 2017-04-05 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
WO2024203121A1 (ja) 2024-10-03
CN120937529A (zh) 2025-11-11
US20260011660A1 (en) 2026-01-08

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251008