CN120457773B - 等离子体处理装置和等离子体处理方法 - Google Patents

等离子体处理装置和等离子体处理方法

Info

Publication number
CN120457773B
CN120457773B CN202380090409.4A CN202380090409A CN120457773B CN 120457773 B CN120457773 B CN 120457773B CN 202380090409 A CN202380090409 A CN 202380090409A CN 120457773 B CN120457773 B CN 120457773B
Authority
CN
China
Prior art keywords
frequency
electric power
antenna
frequency electric
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202380090409.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN120457773A (zh
Inventor
樋口龙太
齐藤武尚
中岛俊希
北邨友志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN120457773A publication Critical patent/CN120457773A/zh
Application granted granted Critical
Publication of CN120457773B publication Critical patent/CN120457773B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN202380090409.4A 2023-01-12 2023-12-25 等离子体处理装置和等离子体处理方法 Active CN120457773B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023002993 2023-01-12
JP2023-002993 2023-08-18
PCT/JP2023/046507 WO2024150666A1 (ja) 2023-01-12 2023-12-25 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
CN120457773A CN120457773A (zh) 2025-08-08
CN120457773B true CN120457773B (zh) 2026-04-28

Family

ID=91896897

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380090409.4A Active CN120457773B (zh) 2023-01-12 2023-12-25 等离子体处理装置和等离子体处理方法

Country Status (7)

Country Link
US (1) US20250343028A1 (https=)
EP (1) EP4651631A1 (https=)
JP (2) JP7675954B2 (https=)
KR (1) KR20250123936A (https=)
CN (1) CN120457773B (https=)
TW (1) TW202449837A (https=)
WO (1) WO2024150666A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026034454A1 (ja) * 2024-08-06 2026-02-12 パナソニックＩｐマネジメント株式会社 電波放射装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105247967A (zh) * 2013-06-17 2016-01-13 应用材料公司 用于等离子体腔室中的快速且可重复的等离子体点燃和调谐的方法
CN115087186A (zh) * 2021-03-11 2022-09-20 东京毅力科创株式会社 点火方法和等离子体处理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008226857A (ja) * 2008-05-16 2008-09-25 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
JP5479867B2 (ja) * 2009-01-14 2014-04-23 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP5851681B2 (ja) 2009-10-27 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP5606821B2 (ja) * 2010-08-04 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
KR101914902B1 (ko) * 2018-02-14 2019-01-14 성균관대학교산학협력단 플라즈마 발생장치 및 이를 포함하는 기판 처리 장치
JP7280552B2 (ja) * 2019-03-18 2023-05-24 コニカミノルタ株式会社 画像形成システムおよび異常紙情報表示方法
JP2020158814A (ja) * 2019-03-26 2020-10-01 東京エレクトロン株式会社 成膜装置および成膜方法
JP7503993B2 (ja) * 2020-10-08 2024-06-21 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105247967A (zh) * 2013-06-17 2016-01-13 应用材料公司 用于等离子体腔室中的快速且可重复的等离子体点燃和调谐的方法
CN115087186A (zh) * 2021-03-11 2022-09-20 东京毅力科创株式会社 点火方法和等离子体处理装置

Also Published As

Publication number Publication date
KR20250123936A (ko) 2025-08-18
CN120457773A (zh) 2025-08-08
EP4651631A1 (en) 2025-11-19
JP7675954B2 (ja) 2025-05-13
WO2024150666A1 (ja) 2024-07-18
US20250343028A1 (en) 2025-11-06
JPWO2024150666A1 (https=) 2024-07-18
TW202449837A (zh) 2024-12-16
JP2025114638A (ja) 2025-08-05

Similar Documents

Publication Publication Date Title
KR100849708B1 (ko) 이중 주파수 ｒｆ 소오스를 사용한 플라즈마 생성 및 제어
US12249486B2 (en) Plasma processing apparatus and plasma processing method
US20250149296A1 (en) Plasma processing apparatus and plasma processing method
US12476080B2 (en) Plasma processing apparatus, power supply system, control method, program, and storage medium
CN115863129A (zh) 等离子体处理装置和处理方法
CN117316749A (zh) 等离子体处理系统和等离子体处理方法
KR20240119145A (ko) 플라즈마 처리 장치, 전원 시스템, 제어 방법, 프로그램, 및 기억 매체
CN120457773B (zh) 等离子体处理装置和等离子体处理方法
KR20240028931A (ko) 에칭 방법 및 플라즈마 처리 장치
US20250191883A1 (en) Plasma processing apparatus, rf system, and rf control method
CN118872033A (zh) 等离子体处理装置和等离子体处理方法
CN117643180A (zh) 等离子体处理系统以及等离子体处理方法
CN121713653A (zh) 等离子体处理装置和阻抗匹配方法
CN120642580A (zh) 等离子体处理装置
KR20220163300A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
US20250343027A1 (en) Plasma-processing apparatus and plasma-processing method
US20250364234A1 (en) Anomaly detection method and plasma processing device
JP2024098586A (ja) プラズマ処理装置及び制御方法
WO2025169740A1 (ja) プラズマ処理装置、電源システム、制御方法、及びプログラム
CN119856573A (zh) 等离子体处理装置和等离子体处理方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant