CN120167134A - 存储装置 - Google Patents
存储装置 Download PDFInfo
- Publication number
- CN120167134A CN120167134A CN202380077250.2A CN202380077250A CN120167134A CN 120167134 A CN120167134 A CN 120167134A CN 202380077250 A CN202380077250 A CN 202380077250A CN 120167134 A CN120167134 A CN 120167134A
- Authority
- CN
- China
- Prior art keywords
- transistor
- wiring
- insulator
- conductor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022182247 | 2022-11-15 | ||
| JP2022-182247 | 2022-11-15 | ||
| PCT/IB2023/061251 WO2024105497A1 (ja) | 2022-11-15 | 2023-11-08 | 記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN120167134A true CN120167134A (zh) | 2025-06-17 |
Family
ID=91083955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202380077250.2A Pending CN120167134A (zh) | 2022-11-15 | 2023-11-08 | 存储装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2024105497A1 (https=) |
| KR (1) | KR20250109700A (https=) |
| CN (1) | CN120167134A (https=) |
| WO (1) | WO2024105497A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101870119B1 (ko) | 2009-12-25 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9312257B2 (en) | 2012-02-29 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI685113B (zh) * | 2015-02-11 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| WO2018203181A1 (ja) * | 2017-05-01 | 2018-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US11183594B2 (en) * | 2018-03-28 | 2021-11-23 | Intel Corporation | Dual gate control for trench shaped thin film transistors |
| CN114424339A (zh) | 2019-09-20 | 2022-04-29 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
-
2023
- 2023-11-08 JP JP2024558476A patent/JPWO2024105497A1/ja active Pending
- 2023-11-08 CN CN202380077250.2A patent/CN120167134A/zh active Pending
- 2023-11-08 WO PCT/IB2023/061251 patent/WO2024105497A1/ja not_active Ceased
- 2023-11-08 KR KR1020257017737A patent/KR20250109700A/ko active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024105497A1 (ja) | 2024-05-23 |
| JPWO2024105497A1 (https=) | 2024-05-23 |
| KR20250109700A (ko) | 2025-07-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |