KR20250109700A - 기억 장치 - Google Patents
기억 장치Info
- Publication number
- KR20250109700A KR20250109700A KR1020257017737A KR20257017737A KR20250109700A KR 20250109700 A KR20250109700 A KR 20250109700A KR 1020257017737 A KR1020257017737 A KR 1020257017737A KR 20257017737 A KR20257017737 A KR 20257017737A KR 20250109700 A KR20250109700 A KR 20250109700A
- Authority
- KR
- South Korea
- Prior art keywords
- wiring
- transistor
- insulator
- conductor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022182247 | 2022-11-15 | ||
| JPJP-P-2022-182247 | 2022-11-15 | ||
| PCT/IB2023/061251 WO2024105497A1 (ja) | 2022-11-15 | 2023-11-08 | 記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20250109700A true KR20250109700A (ko) | 2025-07-17 |
Family
ID=91083955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257017737A Pending KR20250109700A (ko) | 2022-11-15 | 2023-11-08 | 기억 장치 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2024105497A1 (https=) |
| KR (1) | KR20250109700A (https=) |
| CN (1) | CN120167134A (https=) |
| WO (1) | WO2024105497A1 (https=) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011151383A (ja) | 2009-12-25 | 2011-08-04 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2013211537A (ja) | 2012-02-29 | 2013-10-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| WO2021053473A1 (ja) | 2019-09-20 | 2021-03-25 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI685113B (zh) * | 2015-02-11 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| WO2018203181A1 (ja) * | 2017-05-01 | 2018-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US11183594B2 (en) * | 2018-03-28 | 2021-11-23 | Intel Corporation | Dual gate control for trench shaped thin film transistors |
-
2023
- 2023-11-08 JP JP2024558476A patent/JPWO2024105497A1/ja active Pending
- 2023-11-08 CN CN202380077250.2A patent/CN120167134A/zh active Pending
- 2023-11-08 WO PCT/IB2023/061251 patent/WO2024105497A1/ja not_active Ceased
- 2023-11-08 KR KR1020257017737A patent/KR20250109700A/ko active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011151383A (ja) | 2009-12-25 | 2011-08-04 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2013211537A (ja) | 2012-02-29 | 2013-10-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| WO2021053473A1 (ja) | 2019-09-20 | 2021-03-25 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Non-Patent Citations (1)
| Title |
|---|
| M. Oota et. al, "3D-Stacked CAAC-In-Ga-Zn Oxide FETs with Gate Length of 72nm", IEDM Tech. Dig., 2019, pp. 50-53 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN120167134A (zh) | 2025-06-17 |
| WO2024105497A1 (ja) | 2024-05-23 |
| JPWO2024105497A1 (https=) | 2024-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| Q12 | Application published |
Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE) |