CN1201262A - 无源元件电路 - Google Patents
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- 239000003990 capacitor Substances 0.000 claims abstract description 55
- 239000010409 thin film Substances 0.000 claims abstract description 30
- 239000010408 film Substances 0.000 claims description 20
- 230000000977 initiatory effect Effects 0.000 claims description 2
- 229910004205 SiNX Inorganic materials 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 230000009467 reduction Effects 0.000 abstract description 3
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract description 2
- 102000003817 Fos-related antigen 1 Human genes 0.000 abstract 1
- 108090000123 Fos-related antigen 1 Proteins 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 229910002367 SrTiO Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
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- 230000004888 barrier function Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种由螺旋电感、高介电系数薄膜电容、一通孔、以及一接合盘构成的无源元件电路。通过使用SrTiO3作为高介电系数薄膜,对20GHz的频率表现出介电系数为200,能使电容表面区域减少到在用SiNx(介电系数为6.5)时所需要面积的1/30。两个高介电系数薄膜电容、接地通孔和接合盘是设在螺旋电感所围的中心部分。为连接串联接合的两个高介电系数薄膜电容,它们形成在一高介电系数薄膜上。螺旋电感的引线是由来自中心的接合盘的一金属线构成的。
Description
本发明涉及一种单片微波集成电路(MMIC),该微波集成电路在如移动通信的应用中处理微波或毫米波信号,尤其是涉及小型无源元件电路的实现。
单片微波集成电路是通过在GaAs(砷化镓)基片或类似的晶体管上集成有源元件和无源元件构成的,如螺旋电感线圈、叉指式电容器、金属—绝缘体—金属(MIM)电容器、传输路径、以及薄膜电阻。
过去在单片微波集成电路中,尤其是在高输出单片微波集成电路中,存在的问题是如何在输入和输出匹配电路中实现紧密度并减小损耗。这是因为实现具有高容量的体积小的电容是不可能的,并且是因为在形成如电感线圈类的元件时在线路中减小损耗是很困难的。
图5示出了已有技术的单片微波集成电路放大器的一匹配电路的实例。为了阻抗匹配,它包括一螺旋电感501和用SiNx或类似材料制成的一薄膜电容器502。因为使用薄膜电容器作为级间的大容量电容占去了芯片表面区域的大部分,并表现为对实现紧密度的障碍,以芯片电容503的形式提供的近似法是其为在单片微波集成电路外部的。
如在日本实用新型公报No.03-21857中所给出的,其有一种方法,即在形成隔离膜之后,在电容器的顶部叠制一螺旋电感图形。如在日本专利公报No.05-110311中所公布的,其中涉及一种电路,其中带状传输线或电感是形成在贯穿具有低介电系数的介电层之上的具有高介电系数的电介层上。
已使用的螺旋电感501是这样的电感,在使用电极金属形成引线504之后,沉积一层隔离膜,在其上制成金属镀螺旋部分以实现配线。
然而,在上面的结构中,电容器是设置在单片微波集成电路的外部,使得采用单片微波集成电路很难降低成本。还有,除了实现低电感损耗的问题外,在隔离膜的顶上或在介电层的顶上形成上述电感器涉及复杂的工艺。
按照上述的电感器形成方法,由于引线的高电阻,通过使镀的电感部分加厚是很难实现降低电阻的积极效果的。
针对上述已有技术的缺陷,本发明的目的是提供一种尺寸小和损耗低的无源元件电路,并且其易于制作具有很好的可重复性。
为实现上述的目的,本发明的第一无源元件电路是由一高介电系数薄膜电容、一螺旋电感、用于接地的一通孔,以及一接合盘所构成的,其结构是这样的,串联的两个高介电系数薄膜电容、一通孔、及接合盘设置在螺旋电感的中心部分。
本发明还包括经从中间的接合盘的接合制作来自螺旋电感的一引线的方法。
本发明还包括在一高介电系数薄膜上形成两个高介电系数薄膜电容的方法,两个薄膜电容是串联联接。
本发明的第二无源元件电路是由一高介电系数薄膜电容、一螺旋电感、一通孔、以及一接合盘构成,其结构是高介电系数薄膜电容、通孔、以及接合盘设置在螺旋电感的中心部分。
本发明还包括经从中心的接合盘接合制作来自螺旋电感的一引线的方法。
本发明还包括一个方法,其用于使螺旋电感的线长是与所要求的频率的波长的1/4,从而使二次谐波频率短路,以致提高放大器电路的效率。
通过使用高介电系数薄膜电容,与过去的SiNx电容相比,能够实现电容表面区域显著减小。例如,在使用SrTiO3薄膜电容(介电系数达到200)的情况下,能够使电容器表面区域大致减少到过去的SiNx薄膜电容(介电系数为6.5)的情况下的1/30。由于这个原因,为了隔离直流偏置的目的,能够在单片微波集成电路中形成大容量的电容,在过去此电容是在单片微波集成电路的外部实现的,这是减小安装成本和减少芯片尺寸的有效方法。还有,在具有一螺旋电感和一电容器的电路中,通过使用高介电系数薄膜电容,可以将该电容器设在螺旋电感的中心部,从而使芯片的尺寸减小。
通过在一高介电系数薄膜上形成两个高介电系数薄膜电容,可以防止在加工该电容器时由于边缘的损坏而造成的性能的下降,从而可以实现具有很好的可重复性的电容器特性。
通过中心的接合盘的接合使螺旋电感引出一引线,能够用低电阻的接合线替代已有的高电阻引线,从而使电阻产生明显降低。例如,直径为30μm的黄金线的电阻是0.004Ω/mm的一个很低的值。这使得仅通过用黄金镀厚螺旋部分即能做出低电阻电感器。
在电源电路中,能过使螺旋电感的配线长度自电感的起端到尾端对应于所要求的频率的1/4波长,从而使二次谐波短路,并使放大器的效率提高。
图1是本发明第一实施例的平面示意图。
图2是本发明第一实施例的一等效电路图。
图3是本发明第二实施例的示意平面图。
图4是本发明第二实施例的一等效电路图。
图5为已有技术单片微波集成电路的匹配的实例。
下面参照附图描述本发明的实施例。
图1示出了本发明的用无源元件电路构成的一输入匹配电路。图2是这个无源元件电路的等效电路图,它是由用于隔离直流偏置的一大容量电容器201,以及用于阻抗匹配目的一串联的电感202和电容203所构成。
图1所示的无源元件电路是由金属镀形成的一螺旋电感101,高介电系数薄膜电容器102、102,用于接地的通孔103,以及接合盘104所构成。可以用于电容器的高介电系数膜的材料包括这样一些材料,如(BaXSr1-X)TiO3,Pb(ZrXTi1-X)O3,SrBi2Ti2-XNbXO9,钛酸钡(BaTiO3),钛酸铅(PbTiO3)以及钛酸锶(SrTiO3)。
如在1996年12月15日出版的日本的应用物理杂志No.12B,35卷,第二部分的L16813-1684页所指出的使用这些高介电系数薄膜的钛酸锶(SrTiO3),通过使用射频溅射在450度的生长温度下在GaAs基片上形成此高介电系数薄膜,这就能够在高达20GHz的频率上获得为200的介电系数。通过这样做,能够将电容器的表面区域减小到大致为过去所用的SiNx薄膜电容(介电系数为6.5)的表面区域的1/30。例如,在级间所用的70PF电容的尺寸仅是100×50μm2。两个高介电系数薄膜电容102、102,接地通孔103,以及接合盘104被设在由螺旋电感101所包围的中心部分。为串联联接两个高介电系数薄膜电容器102,它们被形成在单一的高介电系数的薄膜106上。因为这样能够防止在加工电容器过程中由于边缘损坏将会造成的性能的下降,所以这是电容器特性可重复方面的优点。用一金属接合线制成从螺旋电感到输入盘104的引线,该金属接合线是从中心的接合盘104引出的。
图3示出了本发明的用无源元件电路形成的输出匹配电路。图4是此无源元件电路的等效电路图,其由并联电感401和用于隔离直流偏置和短路射频信号的电容器402组成。
图3所示的无源元件电路是由金属镀形成的螺旋电感301、高介电系数薄膜电容器302、接地通孔303,以及接合盘304所构成。可用作电容器的高介电系数膜的材料可以是这样的一些材料,如(BaXSr1-X)TiO3、Pb(ZrXTi1-X)O3、SrBi2Ti2-XNbXO9、BaTiO3、PbTiO3、SrTiO3。
如在1996年12月15日出版的日本的应用物理杂志No.12B,35卷,第二部分的L1683-1684页所指出的,使用这些高介电系数薄膜的钛酸锶(SrTiO3),通过使用射频溅射在450度的生长温度下在GaAs基片上形成此高介电系数薄膜,这就能在高达20GHz的频率上获得为200的介电系数。通过这样做,能够将电容器的表面区域减小到大致为过去所用的SiNx薄膜电容(介电系数为6.5)的表面区域的1/30。例如,在级间所用的70PF电容的尺寸仅是100×50μm2。高介电系数薄膜电容302、接地通孔303,以及接合盘304被设在由螺旋电感301所包围的中心部分。
在螺旋电感301中,通过使从电感的起端到电感的末端螺旋电感的配线的长度是对应于所需要频率的1/4的波长,从而使二次谐波短路,并能使放大器的效率提高。从螺旋电感到接合盘的引线是用来自中心的接合盘304的一金属接合线305构成的。
本发明的第一个作用是,通过使用高介电系数薄膜电容,与过去使用的SiNx薄膜电容器相比能够大大地减小电容器的表面区域。例如,在使用SrTiO3薄膜电容(介电系数达到200),能够将电容器表面区域大致减少到大约为SiNx薄膜电容(介电系数为6.5)的表面区域的1/30。由于这个原因,能够在单片微波集成电路中形成大容量的电容用于隔离直流偏置,从而降低了组装成本和芯片的尺寸。
本发明的第二个作用是,通过使用高介电系数薄膜电容,在具有一螺旋电感和一电容的电路中,能够将电容设在螺旋电感内,这是在缩小芯片方面的优点。
本发明的第三个作用是,通过使用从中心的接合盘接合的来自螺旋电感引线,能够用低电阻接合线代替已有技术的高电阻引线。从而使电阻显著的减小。通过这样做,仅通过使螺旋部分金属镀厚就能实现低电阻的电感。
本发明的第四个作用是,通过在单一高介电系数薄膜上形成两连续的高介电系数薄膜电容,能够防止在加工电容器过程中由于边缘损坏将造成的性能的降低,从而能够获得具有很好可重复性的电容特性。
本发明的第五个作用是,通过使从电感的起始端到其末端的螺旋电感的配线长度是对应于所需要频率的1/4波长,从而使二次谐波短路,并能使放大器的效率提高。在较高的谐波方面,通过设计以短路偶次谐波和开路奇次谐波,能够获得更高的效率。
Claims (5)
1、一种无源元件电路,至少包括一高介电系数薄膜电容、一用于接地目的的通孔和一螺旋电感,其中所述高介电系数薄膜电容、所述通孔是设在所述螺旋电感的中心部分。
2、根据权利要求1所述的无源元件电路,其特征在于所述螺旋电感的引线经位于所述螺旋电感的中心部分的所述接合盘的接合做出的。
3、一种用于提供偏置的无源元件电路,包括一高介电系数薄膜电容、一用于接地目的的通孔、一螺旋电感、以及一接合盘,其中所述高介电系数薄膜电容、所述通孔以及接合盘是设在所述螺旋电感的中心部分。
4、根据权利要求3所述的用于提供偏置的无源元件电路,其特征在于从所述电感器的起始端到所述电感的末端的所述螺旋电感的配线长度制成为是对应于所需要的频率的1/4波长。
5、根据权利要求1所述的无源元件电路,其特征在于所述电容器包括使用一层高介电系数薄膜串联联接的两个电容。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP9146696A JPH10335590A (ja) | 1997-06-04 | 1997-06-04 | 受動素子回路 |
JP146696/1997 | 1997-06-04 | ||
JP146696/97 | 1997-06-04 |
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CN1201262A true CN1201262A (zh) | 1998-12-09 |
CN1128476C CN1128476C (zh) | 2003-11-19 |
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CN98102322A Expired - Fee Related CN1128476C (zh) | 1997-06-04 | 1998-06-02 | 单片微波集成电路 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6072205A (zh) |
EP (1) | EP0883183A1 (zh) |
JP (1) | JPH10335590A (zh) |
KR (1) | KR19990006532A (zh) |
CN (1) | CN1128476C (zh) |
CA (1) | CA2239277C (zh) |
Cited By (1)
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CN100511640C (zh) * | 2007-03-21 | 2009-07-08 | 威盛电子股份有限公司 | 具有多重导线结构的螺旋电感元件 |
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US6008713A (en) * | 1996-02-29 | 1999-12-28 | Texas Instruments Incorporated | Monolithic inductor |
JP4080582B2 (ja) * | 1997-12-22 | 2008-04-23 | 株式会社東芝 | 半導体集積回路装置 |
JP3380151B2 (ja) | 1997-12-22 | 2003-02-24 | 新光電気工業株式会社 | 多層回路基板 |
JP3990805B2 (ja) * | 1997-12-25 | 2007-10-17 | 日本ポリプロ株式会社 | オレフィン系複合樹脂積層シート |
FR2787636B1 (fr) * | 1998-12-17 | 2001-03-16 | St Microelectronics Sa | Dispositif semi-conducteur avec substrat du type bicmos a decouplage de bruit |
US6800533B1 (en) * | 2000-03-06 | 2004-10-05 | Chartered Semiconductor Manufacturing Ltd. | Integrated vertical spiral inductor on semiconductor material |
US6586309B1 (en) | 2000-04-24 | 2003-07-01 | Chartered Semiconductor Manufacturing Ltd. | High performance RF inductors and transformers using bonding technique |
DE10039665A1 (de) * | 2000-08-14 | 2002-02-28 | Rohde & Schwarz | Leistungssensor |
US6761963B2 (en) | 2000-09-21 | 2004-07-13 | Michael D. Casper | Integrated thin film capacitor/inductor/interconnect system and method |
US6890629B2 (en) | 2001-09-21 | 2005-05-10 | Michael D. Casper | Integrated thin film capacitor/inductor/interconnect system and method |
US7327582B2 (en) * | 2000-09-21 | 2008-02-05 | Ultrasource, Inc. | Integrated thin film capacitor/inductor/interconnect system and method |
US6362012B1 (en) | 2001-03-05 | 2002-03-26 | Taiwan Semiconductor Manufacturing Company | Structure of merged vertical capacitor inside spiral conductor for RF and mixed-signal applications |
WO2002075780A2 (en) * | 2001-03-21 | 2002-09-26 | Koninklijke Philips Electronics N.V. | Electronic device having dielectric material of high dielectric constant |
US6792299B2 (en) | 2001-03-21 | 2004-09-14 | Conductus, Inc. | Device approximating a shunt capacitor for strip-line-type circuits |
US6998696B2 (en) | 2001-09-21 | 2006-02-14 | Casper Michael D | Integrated thin film capacitor/inductor/interconnect system and method |
US7425877B2 (en) * | 2001-09-21 | 2008-09-16 | Ultrasource, Inc. | Lange coupler system and method |
US6798039B1 (en) | 2002-10-21 | 2004-09-28 | Integrated Device Technology, Inc. | Integrated circuit inductors having high quality factors |
US7619296B2 (en) | 2005-02-03 | 2009-11-17 | Nec Electronics Corporation | Circuit board and semiconductor device |
WO2006127851A2 (en) * | 2005-05-24 | 2006-11-30 | The Trustees Of Columbia University In The City Of New York | Systems and methods for reducing circuit area |
JP4707056B2 (ja) * | 2005-08-31 | 2011-06-22 | 富士通株式会社 | 集積型電子部品および集積型電子部品製造方法 |
DE102005050484B4 (de) * | 2005-10-21 | 2010-01-28 | Atmel Automotive Gmbh | Monolithisch integrierbare Schaltungsanordnung |
JP2008172075A (ja) * | 2007-01-12 | 2008-07-24 | Nec Electronics Corp | 半導体装置 |
JP2009038203A (ja) * | 2007-08-01 | 2009-02-19 | Fujikura Ltd | 半導体装置 |
US20100019300A1 (en) * | 2008-06-25 | 2010-01-28 | The Trustees Of Columbia University In The City Of New York | Multilayer integrated circuit having an inductor in stacked arrangement with a distributed capacitor |
US8169050B2 (en) * | 2008-06-26 | 2012-05-01 | International Business Machines Corporation | BEOL wiring structures that include an on-chip inductor and an on-chip capacitor, and design structures for a radiofrequency integrated circuit |
US7906831B2 (en) * | 2008-09-23 | 2011-03-15 | Infineon Technologies Ag | Semiconductor device with capacitor arrangement electrically coupled to inductor coil |
DE102014212842A1 (de) * | 2014-07-02 | 2016-01-07 | Robert Bosch Gmbh | Vorrichtung zum induktiven Laden eines elektrischen Speichers |
JP6109868B2 (ja) | 2015-03-06 | 2017-04-05 | 株式会社東芝 | 高周波増幅器 |
US10643985B2 (en) | 2017-12-15 | 2020-05-05 | Qualcomm Incorporated | Capacitor array overlapped by on-chip inductor/transformer |
US10600731B2 (en) | 2018-02-20 | 2020-03-24 | Qualcomm Incorporated | Folded metal-oxide-metal capacitor overlapped by on-chip inductor/transformer |
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JPH0321857A (ja) * | 1989-06-19 | 1991-01-30 | Terumo Corp | 酵素センサ及びその製造方法 |
JPH03184367A (ja) * | 1989-12-13 | 1991-08-12 | Mitsubishi Electric Corp | 高周波集積回路 |
JPH05110311A (ja) * | 1991-10-17 | 1993-04-30 | Sanyo Electric Co Ltd | モノリシツクマイクロ波装置 |
JPH06275780A (ja) * | 1993-03-22 | 1994-09-30 | Toshiba Corp | 半導体装置 |
JPH07106515A (ja) * | 1993-08-11 | 1995-04-21 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US5752182A (en) * | 1994-05-09 | 1998-05-12 | Matsushita Electric Industrial Co., Ltd. | Hybrid IC |
JPH0888523A (ja) * | 1994-09-16 | 1996-04-02 | Hitachi Ltd | 分布定数線路型電力増幅器 |
JP3004882B2 (ja) * | 1994-10-17 | 2000-01-31 | 松下電器産業株式会社 | スパイラルインダクタ、マイクロ波増幅回路およびマイクロ波増幅装置 |
JPH08330517A (ja) * | 1995-05-31 | 1996-12-13 | Sanyo Electric Co Ltd | 集積回路装置および共振回路 |
-
1997
- 1997-06-04 JP JP9146696A patent/JPH10335590A/ja active Pending
-
1998
- 1998-05-26 EP EP98109553A patent/EP0883183A1/en not_active Withdrawn
- 1998-05-29 CA CA002239277A patent/CA2239277C/en not_active Expired - Fee Related
- 1998-05-30 KR KR1019980020127A patent/KR19990006532A/ko not_active Application Discontinuation
- 1998-06-02 CN CN98102322A patent/CN1128476C/zh not_active Expired - Fee Related
- 1998-06-04 US US09/090,533 patent/US6072205A/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100511640C (zh) * | 2007-03-21 | 2009-07-08 | 威盛电子股份有限公司 | 具有多重导线结构的螺旋电感元件 |
Also Published As
Publication number | Publication date |
---|---|
CA2239277A1 (en) | 1998-12-04 |
JPH10335590A (ja) | 1998-12-18 |
EP0883183A1 (en) | 1998-12-09 |
CN1128476C (zh) | 2003-11-19 |
US6072205A (en) | 2000-06-06 |
CA2239277C (en) | 2002-02-26 |
KR19990006532A (ko) | 1999-01-25 |
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