CN119753828A - 金属氧氮化物膜的制造方法 - Google Patents

金属氧氮化物膜的制造方法 Download PDF

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Publication number
CN119753828A
CN119753828A CN202411921844.XA CN202411921844A CN119753828A CN 119753828 A CN119753828 A CN 119753828A CN 202411921844 A CN202411921844 A CN 202411921844A CN 119753828 A CN119753828 A CN 119753828A
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Prior art keywords
metal oxynitride
oxynitride film
angle
substrate
plane
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CN202411921844.XA
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Chinese (zh)
Inventor
种村和幸
三本菅正太
奥野直树
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN119753828A publication Critical patent/CN119753828A/zh
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/06—Epitaxial-layer growth by reactive sputtering
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/01—Manufacture or treatment
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
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    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
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    • H10P14/34—Deposited materials, e.g. layers
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    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Led Devices (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
CN202411921844.XA 2018-07-06 2019-06-24 金属氧氮化物膜的制造方法 Pending CN119753828A (zh)

Applications Claiming Priority (4)

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JP2018-128964 2018-07-06
JP2018128964 2018-07-06
PCT/IB2019/055287 WO2020008294A1 (ja) 2018-07-06 2019-06-24 金属酸窒化物膜の作製方法
CN201980039953.XA CN112335024B (zh) 2018-07-06 2019-06-24 金属氧氮化物膜的制造方法

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US (2) US11728163B2 (https=)
JP (3) JP7296381B2 (https=)
KR (1) KR102943468B1 (https=)
CN (2) CN119753828A (https=)
WO (1) WO2020008294A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230060303A1 (en) * 2020-02-14 2023-03-02 Semiconductor Energy Laboratory Co., Ltd. Display apparatus and electronic device
WO2025079560A1 (ja) * 2023-10-11 2025-04-17 住友化学株式会社 金属窒化物、膜、積層体、素子、デバイス、膜の製造方法、磁気トンネル接合素子、及び、磁気デバイス

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07262801A (ja) * 1994-03-25 1995-10-13 Murata Mfg Co Ltd 薄膜発光素子及び発光装置
JP4404995B2 (ja) 1999-07-26 2010-01-27 独立行政法人産業技術総合研究所 Ａ面サファイア基板を用いたＺｎＯ系化合物半導体発光素子およびその製法
KR100694928B1 (ko) 1999-07-26 2007-03-14 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 ＺｎＯ계 화합물 반도체발광소자 및 그 제조방법
EP1374309A1 (en) * 2001-03-30 2004-01-02 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
CN101600820B (zh) 2006-12-28 2012-08-15 圣戈本陶瓷及塑料股份有限公司 蓝宝石基材及其制备方法
JP5490368B2 (ja) * 2007-03-26 2014-05-14 公益財団法人神奈川科学技術アカデミー エピタキシャル薄膜の形成方法及び半導体基板の製造方法
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP2011029238A (ja) 2009-07-21 2011-02-10 Fujifilm Corp 結晶性ホモロガス化合物層を含む積層体の製造方法及び電界効果型トランジスタ
JP6095914B2 (ja) * 2012-07-31 2017-03-15 三菱重工業株式会社 エアフィルタ自動清掃機構の制御装置、方法、プログラム、およびそれを備えた空気調和機
JP6217196B2 (ja) 2013-07-11 2017-10-25 三菱電機株式会社 半導体材料、薄膜トランジスタ、および薄膜トランジスタの製造方法
TWI672804B (zh) * 2014-05-23 2019-09-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置的製造方法
JP6901473B2 (ja) 2016-05-26 2021-07-14 住友化学株式会社 金属酸窒化物半導体膜の製造方法および金属酸窒化物半導体膜
JP2017216445A (ja) 2016-05-31 2017-12-07 出光興産株式会社 膜、膜の製造方法、積層体及び半導体デバイス
US10461197B2 (en) 2016-06-03 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, oxide semiconductor, oxynitride semiconductor, and transistor
US10347483B2 (en) * 2017-05-29 2019-07-09 Franck Natali Rare earth nitride structure or device and fabrication method

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CN112335024B (zh) 2025-01-24
WO2020008294A1 (ja) 2020-01-09
JP7296381B2 (ja) 2023-06-22
US12315717B2 (en) 2025-05-27
KR20210027448A (ko) 2021-03-10
JP7531660B2 (ja) 2024-08-09
US11728163B2 (en) 2023-08-15
KR102943468B1 (ko) 2026-03-25
US20210125823A1 (en) 2021-04-29
JP2024163913A (ja) 2024-11-22
US20230402280A1 (en) 2023-12-14
CN112335024A (zh) 2021-02-05
JPWO2020008294A1 (ja) 2021-08-02
JP2023118744A (ja) 2023-08-25

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