JP7296381B2 - 金属酸窒化物膜の作製方法 - Google Patents
金属酸窒化物膜の作製方法 Download PDFInfo
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- JP7296381B2 JP7296381B2 JP2020528536A JP2020528536A JP7296381B2 JP 7296381 B2 JP7296381 B2 JP 7296381B2 JP 2020528536 A JP2020528536 A JP 2020528536A JP 2020528536 A JP2020528536 A JP 2020528536A JP 7296381 B2 JP7296381 B2 JP 7296381B2
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- metal oxynitride
- oxynitride film
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- sample
- substrate
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- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Description
本実施の形態では、本発明の一態様である金属酸窒化物膜の作製方法について説明する。
次に、図3(A)および図3(B)を用いて、本発明の一態様である金属酸窒化物膜の作製方法に係るスパッタリング装置について説明する。図3(A)は、スパッタリング装置が有する成膜室41を説明する断面図であり、図3(B)は、スパッタリング装置が有するマグネットユニット54a、およびマグネットユニット54bの平面図である。
エピタキシャル成長の評価は、評価方法によって、薄膜の成膜中または薄膜の成膜後に行うことができる。
広域逆格子空間マッピングについて説明する。
極点測定は、X線源と検出器の位置(角度)を一定に保ったまま、試料をあらゆる方向に回転させることで、回折強度の分布を測定する方法である。極点測定では、検出器として、本明細書では、2次元検出器を用いる。具体的には、検出器detectorを検出角度(2θ)に固定し、試料sampleをθ方向とψ方向に傾けた状態で、面内方向(φ方向)に回転させてあらゆる方向に傾いた格子面を測定する。極点測定で得られる回折強度から、薄膜の結晶性および配向性を評価することができる。なお、極点測定に用いる検出器としては2次元検出器に限られず、0次元検出器でもよい。
XRD法を用いた測定には、Out-of-plane測定およびIn-plane測定がある。Out-of-plane測定は、薄膜の表面に対して平行な結晶面を評価する手法であり、In-plane測定は、薄膜の表面に対して垂直な結晶面を評価する手法である。Out-of-plane測定およびIn-plane測定では、検出器として、0次元検出器を用いても良い。
本実施の形態では、先の実施の形態で示した、エピタキシャル成長した金属酸窒化物膜の用途について説明する。
本実施の形態では、本発明の一態様の発光素子を様々な照明装置に適用する一例について、図7(A)および図7(B)を用いて説明する。本発明の一態様である発光素子を用いることで、発光効率が良好な、信頼性の高い照明装置を作製できる。
本実施の形態では、上記実施の形態で説明した発光素子を用いた表示装置の構成例について、図8(A)乃至図8(C)を用いて説明する。
本実施の形態では、先の実施の形態に示す表示装置を用いた本発明の一態様の電子機器について、図面を参照して説明する。
まず、試料1乃至試料7の作製方法について説明する。
試料1の広域逆格子空間マップを図10(A)に示す。また、シミュレーションで得られた広域逆格子空間マップを図10(B)および図10(C)に示す。図10(B)は、試料1の単結晶の基板に対応する広域逆格子空間マップであり、図10(C)は、試料1の金属酸窒化物膜が有する結晶に対応する広域逆格子空間マップである。
試料2の広域逆格子空間マップを図12(A)に示す。また、シミュレーションで得られた広域逆格子空間マップを図12(B)および図12(C)に示す。図12(B)は、試料2の単結晶の基板に対応する広域逆格子空間マップであり、図12(C)は、試料2の金属酸窒化物膜が有する結晶に対応する広域逆格子空間マップである。
試料3の広域逆格子空間マップを図14(A)に示す。また、シミュレーションで得られた広域逆格子空間マップを図14(B)および図14(C)に示す。図14(B)は、試料3の単結晶の基板に対応する広域逆格子空間マップであり、図14(C)は、試料3の金属酸窒化物膜が有する結晶に対応する広域逆格子空間マップである。
試料4の広域逆格子空間マップを図16(A)に示す。また、シミュレーションで得られた広域逆格子空間マップを図16(B)および図16(C)に示す。図16(B)は、試料4の単結晶の基板に対応する広域逆格子空間マップであり、図16(C)は、試料4の金属酸窒化物膜が有する結晶に対応する広域逆格子空間マップである。
試料5の広域逆格子空間マップを図18(A)に示す。また、シミュレーションで得られた広域逆格子空間マップを図18(B)および図18(C)に示す。図18(B)は、試料5の単結晶の基板に対応する広域逆格子空間マップであり、図18(C)は、試料5の金属酸窒化物膜が有する結晶に対応する広域逆格子空間マップである。
試料6の広域逆格子空間マップを図20(A)に示す。また、シミュレーションで得られた広域逆格子空間マップを図20(B)および図20(C)に示す。図20(B)は、試料6の単結晶の基板に対応する広域逆格子空間マップであり、図20(C)は、試料6の金属酸窒化物膜が有する結晶に対応する広域逆格子空間マップである。
試料7の広域逆格子空間マップを図22(A)に示す。また、シミュレーションで得られた広域逆格子空間マップを図22(B)および図22(C)に示す。図22(B)は、試料7の単結晶の基板に対応する広域逆格子空間マップであり、図22(C)は、試料7の金属酸窒化物膜が有する結晶に対応する広域逆格子空間マップである。
Claims (5)
- 面方位が(111)である単結晶のイットリア安定化ジルコニア(YSZ)基板上に、
窒素ガスを含む気体を導入して、酸化物ターゲットを用いて、スパッタリング法によって、エピタキシャル成長させる金属酸窒化物膜の作製方法であって、
前記酸化物ターゲットは、亜鉛、インジウムおよびガリウムを含み、
前記金属酸窒化物膜の成膜中の前記基板は、80℃以上400℃以下であり、
前記窒素ガスの流量は、前記気体の全流量中の50%以上100%以下である、金属酸窒化物膜の作製方法。 - 面方位が(110)である単結晶のA面サファイア基板上に、
窒素ガスを含む気体を導入して、酸化物ターゲットを用いて、スパッタリング法によって、エピタキシャル成長させる金属酸窒化物膜の作製方法であって、
前記酸化物ターゲットは、亜鉛、インジウムおよびガリウムを含み、
前記金属酸窒化物膜の成膜中の前記基板は、80℃以上400℃以下であり、
前記窒素ガスの流量は、前記気体の全流量中の50%以上100%以下である、金属酸窒化物膜の作製方法。 - 請求項1または請求項2において、
前記金属酸窒化物膜の結晶構造は、ウルツ鉱型構造である、金属酸窒化物膜の作製方法。 - 請求項3において、
前記金属酸窒化物膜に対して、極点測定を行った場合、
極点測定の、前記金属酸窒化物膜の結晶の(101)面に対するφスキャンにて、6回対称を示す回折ピークが観測される、金属酸窒化物膜の作製方法。 - 請求項4において、
前記金属酸窒化物膜の広域逆格子空間マップにおいて、第1のスポット及び第2のスポットが観察され、
前記第1のスポットのピークは、角度2θが30°以上35°以下、かつ、角度ψが0°付近に位置し、
前記第1のスポットの半値幅は、2°未満であり、
前記第2のスポットのピークは、角度2θが33°以上37°以下、かつ、角度ψが61°以上65°以下に位置し、
前記第2のスポットの半値幅が、2°未満である、金属酸窒化物膜の作製方法。
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