CN119585855A - 等离子体处理装置和电源系统 - Google Patents
等离子体处理装置和电源系统 Download PDFInfo
- Publication number
- CN119585855A CN119585855A CN202380055337.XA CN202380055337A CN119585855A CN 119585855 A CN119585855 A CN 119585855A CN 202380055337 A CN202380055337 A CN 202380055337A CN 119585855 A CN119585855 A CN 119585855A
- Authority
- CN
- China
- Prior art keywords
- period
- signal
- voltage level
- states
- repetition period
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-120800 | 2022-07-28 | ||
| JP2022120800 | 2022-07-28 | ||
| PCT/JP2023/026442 WO2024024594A1 (ja) | 2022-07-28 | 2023-07-19 | プラズマ処理装置及び電源システム |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119585855A true CN119585855A (zh) | 2025-03-07 |
Family
ID=89706292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202380055337.XA Pending CN119585855A (zh) | 2022-07-28 | 2023-07-19 | 等离子体处理装置和电源系统 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250174434A1 (https=) |
| JP (1) | JPWO2024024594A1 (https=) |
| KR (1) | KR20250044879A (https=) |
| CN (1) | CN119585855A (https=) |
| TW (1) | TW202422629A (https=) |
| WO (1) | WO2024024594A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025203685A1 (ja) * | 2024-03-29 | 2025-10-02 | 株式会社ダイヘン | 高周波電力供給システム |
| WO2025203684A1 (ja) * | 2024-03-29 | 2025-10-02 | 株式会社ダイヘン | 高周波電源装置 |
| WO2026034233A1 (ja) * | 2024-08-08 | 2026-02-12 | 東京エレクトロン株式会社 | プラズマ処理装置及び電源システム |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8070972B2 (en) * | 2006-03-30 | 2011-12-06 | Tokyo Electron Limited | Etching method and etching apparatus |
| US9123509B2 (en) | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| JP6027490B2 (ja) * | 2013-05-13 | 2016-11-16 | 東京エレクトロン株式会社 | ガスを供給する方法、及びプラズマ処理装置 |
| JP6030994B2 (ja) * | 2013-05-15 | 2016-11-24 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法 |
| JP6158111B2 (ja) * | 2014-02-12 | 2017-07-05 | 東京エレクトロン株式会社 | ガス供給方法及び半導体製造装置 |
| JP6284786B2 (ja) * | 2014-02-27 | 2018-02-28 | 東京エレクトロン株式会社 | プラズマ処理装置のクリーニング方法 |
| JP6541596B2 (ja) * | 2016-03-22 | 2019-07-10 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JP6670791B2 (ja) * | 2017-03-30 | 2020-03-25 | 東京エレクトロン株式会社 | 流量制御器を検査する方法及び被処理体を処理する方法 |
| JP2019129123A (ja) * | 2018-01-26 | 2019-08-01 | 東京エレクトロン株式会社 | 直流電圧を印加する方法及びプラズマ処理装置 |
| JP7250449B2 (ja) * | 2018-07-04 | 2023-04-03 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| CN112534544B (zh) * | 2018-08-30 | 2025-02-11 | 东京毅力科创株式会社 | 控制等离子体加工的系统和方法 |
| US11605527B2 (en) * | 2020-01-20 | 2023-03-14 | COMET Technologies USA, Inc. | Pulsing control match network |
| JP7442365B2 (ja) * | 2020-03-27 | 2024-03-04 | 東京エレクトロン株式会社 | 基板処理装置、基板処理システム、基板処理装置の制御方法および基板処理システムの制御方法 |
| JP7433271B2 (ja) * | 2020-04-27 | 2024-02-19 | 東京エレクトロン株式会社 | 基板処理装置および基板処理装置の制御方法 |
| JP7575353B2 (ja) * | 2020-08-31 | 2024-10-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7504004B2 (ja) * | 2020-11-13 | 2024-06-21 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| JP7560215B2 (ja) * | 2021-03-17 | 2024-10-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7544450B2 (ja) * | 2021-03-17 | 2024-09-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7648307B2 (ja) * | 2021-06-22 | 2025-03-18 | 東京エレクトロン株式会社 | シャワーヘッド及びプラズマ処理装置 |
| JP7761537B2 (ja) * | 2022-07-20 | 2025-10-28 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| WO2024038774A1 (ja) * | 2022-08-16 | 2024-02-22 | 東京エレクトロン株式会社 | プラズマ処理装置及び静電チャック |
| WO2024043065A1 (ja) * | 2022-08-22 | 2024-02-29 | 東京エレクトロン株式会社 | プラズマ処理装置、ｒｆシステム、およびｒｆ制御方法 |
| US12266506B2 (en) * | 2022-09-07 | 2025-04-01 | Applied Materials, Inc. | Scanning impedance measurement in a radio frequency plasma processing chamber |
| US20240145215A1 (en) * | 2022-10-28 | 2024-05-02 | Applied Materials, Inc. | Pulsed voltage plasma processing apparatus and method |
| US12580155B2 (en) * | 2022-12-07 | 2026-03-17 | Applied Materials, Inc. | Learning based tuning in a radio frequency plasma processing chamber |
| JPWO2024171714A1 (https=) * | 2023-02-14 | 2024-08-22 |
-
2023
- 2023-07-19 WO PCT/JP2023/026442 patent/WO2024024594A1/ja not_active Ceased
- 2023-07-19 CN CN202380055337.XA patent/CN119585855A/zh active Pending
- 2023-07-19 JP JP2024537629A patent/JPWO2024024594A1/ja active Pending
- 2023-07-19 KR KR1020257005155A patent/KR20250044879A/ko active Pending
- 2023-07-21 TW TW112127268A patent/TW202422629A/zh unknown
-
2025
- 2025-01-27 US US19/037,464 patent/US20250174434A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202422629A (zh) | 2024-06-01 |
| KR20250044879A (ko) | 2025-04-01 |
| US20250174434A1 (en) | 2025-05-29 |
| JPWO2024024594A1 (https=) | 2024-02-01 |
| WO2024024594A1 (ja) | 2024-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |